FR815218A - Procédé de fabrication de systèmes d'électrodes à conductibilité dissymétrique - Google Patents

Procédé de fabrication de systèmes d'électrodes à conductibilité dissymétrique

Info

Publication number
FR815218A
FR815218A FR815218DA FR815218A FR 815218 A FR815218 A FR 815218A FR 815218D A FR815218D A FR 815218DA FR 815218 A FR815218 A FR 815218A
Authority
FR
France
Prior art keywords
manufacturing process
electrode systems
conductivity electrode
asymmetric conductivity
asymmetric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR815218A publication Critical patent/FR815218A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/84—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being selenium or tellurium only 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hybrid Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
FR815218D 1935-12-21 1936-12-19 Procédé de fabrication de systèmes d'électrodes à conductibilité dissymétrique Expired FR815218A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN38969D DE747040C (de) 1935-12-21 1935-12-21 Verfahren zur Herstellung eines Elektrodensystems mit unsymmetrischer Leitfaehigkeit

Publications (1)

Publication Number Publication Date
FR815218A true FR815218A (fr) 1937-07-08

Family

ID=25989195

Family Applications (1)

Application Number Title Priority Date Filing Date
FR815218D Expired FR815218A (fr) 1935-12-21 1936-12-19 Procédé de fabrication de systèmes d'électrodes à conductibilité dissymétrique

Country Status (5)

Country Link
BE (1) BE419083A (enrdf_load_stackoverflow)
DE (1) DE747040C (enrdf_load_stackoverflow)
FR (1) FR815218A (enrdf_load_stackoverflow)
GB (1) GB470552A (enrdf_load_stackoverflow)
NL (1) NL47719C (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters
DE975018C (de) * 1952-07-17 1961-07-06 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT117386B (de) * 1927-12-06 1930-04-25 Sueddeutsche Telefon App Kabel Elektrischer Wechselstromgleichrichter.
DE517347C (de) * 1928-10-01 1931-02-05 Sueddeutsche Telefon App Kabel Elektrisches Ventil
DE512817C (de) * 1928-10-30 1930-11-17 Sueddeutsche Telefon App Kabel Elektrischer Trockengleichrichter

Also Published As

Publication number Publication date
NL47719C (enrdf_load_stackoverflow) 1940-02-15
BE419083A (enrdf_load_stackoverflow) 1900-01-01
DE747040C (de) 1944-09-04
GB470552A (en) 1937-08-17

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