FR3115926B1 - Circuit intégré comportant une structure capacitive du type métal-isolant-métal et procédé de fabrication correspondant - Google Patents

Circuit intégré comportant une structure capacitive du type métal-isolant-métal et procédé de fabrication correspondant Download PDF

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Publication number
FR3115926B1
FR3115926B1 FR2011274A FR2011274A FR3115926B1 FR 3115926 B1 FR3115926 B1 FR 3115926B1 FR 2011274 A FR2011274 A FR 2011274A FR 2011274 A FR2011274 A FR 2011274A FR 3115926 B1 FR3115926 B1 FR 3115926B1
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FR
France
Prior art keywords
metal
layer
insulator
integrated circuit
capacitive structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2011274A
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English (en)
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FR3115926A1 (fr
Inventor
Pascal Fornara
Roberto Simola
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR2011274A priority Critical patent/FR3115926B1/fr
Priority to US17/516,920 priority patent/US12021074B2/en
Priority to CN202111293333.4A priority patent/CN114446929A/zh
Priority to CN202122670245.3U priority patent/CN216624268U/zh
Publication of FR3115926A1 publication Critical patent/FR3115926A1/fr
Application granted granted Critical
Publication of FR3115926B1 publication Critical patent/FR3115926B1/fr
Priority to US18/668,639 priority patent/US20240312977A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H01L27/0682—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors comprising combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Le circuit intégré comporte un substrat semiconducteur (SUB), une couche conductrice (P0) au-dessus d’une face avant (FA) du substrat (SUB), une première piste métallique (PM1) dans un premier niveau de métal (M1), une région diélectrique pré-métal (DPM) située entre la couche conductrice (P0) et le premier niveau de métal (M1), et au moins une structure capacitive dite du type métal-isolant-métal (MIMCAP) située dans le volume de la région diélectrique pré-métal (DPM) et comprenant une première couche métallique (CM1) électriquement connectée avec la couche conductrice (P0), une deuxième couche métallique (CM2) électriquement connectée avec la première piste métallique (PM1), et une couche diélectrique (CD) entre la première couche métallique (CM1) et la deuxième couche métallique (CM2). Figure de l’abrégé : figure 1
FR2011274A 2020-11-03 2020-11-03 Circuit intégré comportant une structure capacitive du type métal-isolant-métal et procédé de fabrication correspondant Active FR3115926B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2011274A FR3115926B1 (fr) 2020-11-03 2020-11-03 Circuit intégré comportant une structure capacitive du type métal-isolant-métal et procédé de fabrication correspondant
US17/516,920 US12021074B2 (en) 2020-11-03 2021-11-02 Integrated circuit including a capacitive structure of the metal-insulator-metal type and corresponding manufacturing method
CN202111293333.4A CN114446929A (zh) 2020-11-03 2021-11-03 包括金属-绝缘体-金属型电容结构的集成电路和对应制造方法
CN202122670245.3U CN216624268U (zh) 2020-11-03 2021-11-03 集成电路
US18/668,639 US20240312977A1 (en) 2020-11-03 2024-05-20 Integrated circuit including a capacitive structure of the metal-insulator-metal type and corresponding manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2011274A FR3115926B1 (fr) 2020-11-03 2020-11-03 Circuit intégré comportant une structure capacitive du type métal-isolant-métal et procédé de fabrication correspondant
FR2011274 2020-11-03

Publications (2)

Publication Number Publication Date
FR3115926A1 FR3115926A1 (fr) 2022-05-06
FR3115926B1 true FR3115926B1 (fr) 2023-06-09

Family

ID=73793523

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2011274A Active FR3115926B1 (fr) 2020-11-03 2020-11-03 Circuit intégré comportant une structure capacitive du type métal-isolant-métal et procédé de fabrication correspondant

Country Status (2)

Country Link
US (1) US12021074B2 (fr)
FR (1) FR3115926B1 (fr)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706632B2 (en) * 2002-04-25 2004-03-16 Micron Technology, Inc. Methods for forming capacitor structures; and methods for removal of organic materials
US8107290B2 (en) * 2008-04-01 2012-01-31 The Regents Of The University Of Michigan Memory cell structure, a memory device employing such a memory cell structure, and an integrated circuit having such a memory device
US9425192B2 (en) * 2008-12-11 2016-08-23 Altera Corporation Integrated circuit decoupling capacitors
US8836078B2 (en) 2011-08-18 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically oriented inductor within interconnect structures and capacitor structure thereof
US8619464B1 (en) * 2011-08-26 2013-12-31 Altera Corporation Static random-access memory having read circuitry with capacitive storage
US8809956B2 (en) 2011-10-13 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically oriented semiconductor device and shielding structure thereof
US9159723B2 (en) * 2013-09-16 2015-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
JP2015179727A (ja) * 2014-03-19 2015-10-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびその製造方法
EP2999002A1 (fr) * 2014-09-18 2016-03-23 Services Petroliers Schlumberger Cellule de condensateur et son procédé de fabrication
US10910320B2 (en) 2017-11-30 2021-02-02 Mediatek Inc. Shielded MOM capacitor
TWI696285B (zh) * 2019-05-02 2020-06-11 力晶積成電子製造股份有限公司 記憶體結構
US12068238B2 (en) 2021-04-19 2024-08-20 Qualcomm Incorporated Back-end-of-line (BEOL) high resistance (Hi-R) conductor layer in a metal oxide metal (MOM) capacitor

Also Published As

Publication number Publication date
FR3115926A1 (fr) 2022-05-06
US20220139899A1 (en) 2022-05-05
US12021074B2 (en) 2024-06-25

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