FR3112425B1 - Image sensors including an array of interference filters - Google Patents

Image sensors including an array of interference filters Download PDF

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Publication number
FR3112425B1
FR3112425B1 FR2007352A FR2007352A FR3112425B1 FR 3112425 B1 FR3112425 B1 FR 3112425B1 FR 2007352 A FR2007352 A FR 2007352A FR 2007352 A FR2007352 A FR 2007352A FR 3112425 B1 FR3112425 B1 FR 3112425B1
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FR
France
Prior art keywords
face
filter
array
image sensors
interference filters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2007352A
Other languages
French (fr)
Other versions
FR3112425A1 (en
Inventor
Jérôme Vaillant
Quentin Abadie
François Deneuville
Lilian Masarotto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2007352A priority Critical patent/FR3112425B1/en
Publication of FR3112425A1 publication Critical patent/FR3112425A1/en
Application granted granted Critical
Publication of FR3112425B1 publication Critical patent/FR3112425B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteurs d'images comprenant une matrice de filtres interférentiels La présente description concerne un capteur d'images (10) comprenant un substrat (12) comprenant des photodétecteurs (PH) adaptés à capter un rayonnement ; un filtre pixélisé (20) comprenant des première et deuxième faces opposées et comprenant des pixels de filtre (PFIRCUT, PFIRBP) dont au moins certains comprennent un filtre interférentiel ; des murs (40) réfléchissants ou absorbants ledit rayonnement s'étendant de la première face à la deuxième face et délimitant les pixels de filtres ; et une matrice (30) de lentilles (32) reposant sur la deuxième face, le filtre pixélisé étant interposé entre le substrat et la matrice de lentilles, la première face étant du côté du substrat et la deuxième face étant du côté des lentilles, le plan focal des lentilles correspondant à la deuxième face à 500 nm prés. Figure pour l'abrégé : Fig. 1Image sensors comprising an array of interference filters The present description relates to an image sensor (10) comprising a substrate (12) comprising photodetectors (PH) adapted to capture radiation; a pixelated filter (20) comprising first and second opposed faces and comprising filter pixels (PFIRCUT, PFIRBP) at least some of which comprise an interference filter; walls (40) reflecting or absorbing said radiation extending from the first face to the second face and delimiting the filter pixels; and a matrix (30) of lenses (32) resting on the second face, the pixelated filter being interposed between the substrate and the lens matrix, the first face being on the substrate side and the second face being on the lens side, the focal plane of the lenses corresponding to the second face at 500 nm. Figure for abstract: Fig. 1

FR2007352A 2020-07-10 2020-07-10 Image sensors including an array of interference filters Active FR3112425B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR2007352A FR3112425B1 (en) 2020-07-10 2020-07-10 Image sensors including an array of interference filters

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2007352A FR3112425B1 (en) 2020-07-10 2020-07-10 Image sensors including an array of interference filters
FR2007352 2020-07-10

Publications (2)

Publication Number Publication Date
FR3112425A1 FR3112425A1 (en) 2022-01-14
FR3112425B1 true FR3112425B1 (en) 2024-01-12

Family

ID=73497870

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2007352A Active FR3112425B1 (en) 2020-07-10 2020-07-10 Image sensors including an array of interference filters

Country Status (1)

Country Link
FR (1) FR3112425B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230006680A (en) * 2021-07-01 2023-01-11 삼성전자주식회사 Image sensor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI756388B (en) * 2017-03-24 2022-03-01 日商富士軟片股份有限公司 Structure, composition for forming near-infrared transmission filter layer, and photosensor
FR3082322B1 (en) * 2018-06-08 2020-07-31 Commissariat A L Energie Atomique Et Aux Energies Alternatives IMAGE SENSORS INCLUDING AN INTERFERENTIAL FILTER MATRIX

Also Published As

Publication number Publication date
FR3112425A1 (en) 2022-01-14

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