JP2008071972A5 - - Google Patents

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Publication number
JP2008071972A5
JP2008071972A5 JP2006249953A JP2006249953A JP2008071972A5 JP 2008071972 A5 JP2008071972 A5 JP 2008071972A5 JP 2006249953 A JP2006249953 A JP 2006249953A JP 2006249953 A JP2006249953 A JP 2006249953A JP 2008071972 A5 JP2008071972 A5 JP 2008071972A5
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JP
Japan
Prior art keywords
lens
photoelectric conversion
conversion means
chip
chip lens
Prior art date
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Granted
Application number
JP2006249953A
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Japanese (ja)
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JP2008071972A (en
JP4968893B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2006249953A priority Critical patent/JP4968893B2/en
Priority claimed from JP2006249953A external-priority patent/JP4968893B2/en
Publication of JP2008071972A publication Critical patent/JP2008071972A/en
Publication of JP2008071972A5 publication Critical patent/JP2008071972A5/ja
Application granted granted Critical
Publication of JP4968893B2 publication Critical patent/JP4968893B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Claims (9)

撮影レンズを介した光束を受ける撮像素子であって、
前記撮影レンズにより形成された被写体像を撮像するための複数の第1の画素と、
前記撮影レンズの焦点検出を行うための複数の第2の画素と、
を備え、
前記第1の画素は、
分割されていない第1の光電変換手段と、
前記第1の光電変換手段の上方に配された第1のオンチップレンズと、
前記第1のオンチップレンズと前記第1の光電変換手段との間に配された光導波路と、
を有し、
前記第2の画素は、
互いに分割されている複数の第2の光電変換手段と、
前記複数の第2の光電変換手段の上方に配された第2のオンチップレンズと、
を有し、
前記第2の画素は、前記第2のオンチップレンズと前記第2の光電変換手段との間に光導波路を有しない
ことを特徴とする撮像素子。
An image sensor that receives a light beam through a photographing lens ,
A plurality of first pixels for capturing a subject image formed by the photographing lens ;
A plurality of second pixels for performing focus detection of the photographing lens ;
With
The first pixel is
First photoelectric conversion means that is not divided;
A first on-chip lens disposed above the first photoelectric conversion means;
An optical waveguide disposed between the first on-chip lens and the first photoelectric conversion means ;
Have
The second pixel is
A plurality of second photoelectric conversion means divided from each other;
A second on-chip lens disposed above the plurality of second photoelectric conversion means;
Have
The image pickup device , wherein the second pixel does not have an optical waveguide between the second on-chip lens and the second photoelectric conversion means.
前記第1のンチップレンズは、前記第2のオンチップレンズより開口率の大きい形状を有しており、
前記第2のンチップレンズ前記撮影レンズの瞳と前記複数の第2の光電変換手段とを結像関係にする形状を有している
ことを特徴とする請求項1に記載の撮像素子。
The first on-chip lens has a larger shape of the opening ratio than the second on-chip lens,
The second on-chip lens according to claim 1, characterized in <br/> that has a shape that the pupil and the plurality of second photoelectric conversion unit of the photographing lens to the imaging relationship The imaging device described in 1.
前記第1のンチップレンズは、その上面が非球面あり、かつ、その開口の形状形である
ことを特徴とする請求項2に記載の撮像素子。
The first on-chip lenses, the top surface is aspherical, and the imaging device according to claim 2, the shape of the opening is characterized in that it is a rectangle.
前記第2のンチップレンズは、その上面がであり、かつ、その開口の形状が円形である
ことを特徴とする請求項2又は請求項3に記載の撮像素子。
The second on-chip lens, the upper surface is a sphere surface, and an imaging device according to claim 2 or claim 3 shape of the opening is characterized in that it is a circular shape.
前記第1の画素は、前記第1のオンチップレンズと前記光導波路との間に配されたレンズを更に有する
ことを特徴とする請求項1に記載の撮像素子。
The image sensor according to claim 1, wherein the first pixel further includes a lens disposed between the first on-chip lens and the optical waveguide.
前記光導波路は、カラーフィルタを兼ねている
ことを特徴とする請求項5に記載の撮像素子。
The image pickup device according to claim 5, wherein the optical waveguide also serves as a color filter.
前記第1のンチップレンズは、前記第2のンチップレンズよりも厚い
ことを特徴とする請求項1に記載の撮像素子。
The first on-chip lenses, the imaging device according to claim 1, wherein the thicker than the second on-chip lens.
前記第2の画素は、
フローティングディフュージョン部と、
前記複数の第2の光電変換手段で発生した信号電荷を前記フローティングディフュージョン部へ転送する複数の転送スイッチと、
前記フローティングディフュージョン部の電位に応じた信号を出力するソースフォロワアンプと、
をさらに有する
ことを特徴とする請求項1乃至請求項7のいずれか1項に記載の撮像素子。
The second pixel is
Floating diffusion,
A plurality of transfer switches for transferring signal charges generated by the plurality of second photoelectric conversion means to the floating diffusion unit;
A source follower amplifier that outputs a signal corresponding to the potential of the floating diffusion portion;
The image pickup device according to any one of claims 1 to 7 , further comprising:
撮影レンズと、
前記撮影レンズを介した光束を受ける請求項1乃至請求項8のいずれか1項に記載の撮像素子と、
を備えことを特徴とする撮像システム。
A taking lens ,
The image pickup device according to any one of claims 1 to 8, wherein the image pickup device receives a light beam through the photographing lens .
Imaging system comprising the.
JP2006249953A 2006-09-14 2006-09-14 Imaging device and imaging system Expired - Fee Related JP4968893B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006249953A JP4968893B2 (en) 2006-09-14 2006-09-14 Imaging device and imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006249953A JP4968893B2 (en) 2006-09-14 2006-09-14 Imaging device and imaging system

Publications (3)

Publication Number Publication Date
JP2008071972A JP2008071972A (en) 2008-03-27
JP2008071972A5 true JP2008071972A5 (en) 2009-11-05
JP4968893B2 JP4968893B2 (en) 2012-07-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006249953A Expired - Fee Related JP4968893B2 (en) 2006-09-14 2006-09-14 Imaging device and imaging system

Country Status (1)

Country Link
JP (1) JP4968893B2 (en)

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JP5372102B2 (en) 2011-02-09 2013-12-18 キヤノン株式会社 Photoelectric conversion device and imaging system
JP6039530B2 (en) * 2011-02-09 2016-12-07 キヤノン株式会社 Photoelectric conversion device and imaging system using the same
JP5404693B2 (en) * 2011-05-18 2014-02-05 キヤノン株式会社 IMAGING ELEMENT, IMAGING DEVICE HAVING THE SAME, AND CAMERA SYSTEM
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JP6103301B2 (en) * 2013-07-03 2017-03-29 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
JP6271900B2 (en) * 2013-07-31 2018-01-31 キヤノン株式会社 Solid-state imaging device and imaging apparatus using the same
JP2015076475A (en) * 2013-10-08 2015-04-20 ソニー株式会社 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
JP6115787B2 (en) * 2013-12-18 2017-04-19 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
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KR102286111B1 (en) * 2014-08-21 2021-08-04 삼성전자주식회사 A unit pixel, an image sensor including the unit pixel, and an image processing system including the unit pixel
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