FR3107410B1 - Amplificateur de puissance radiofrequence - Google Patents

Amplificateur de puissance radiofrequence Download PDF

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Publication number
FR3107410B1
FR3107410B1 FR2101442A FR2101442A FR3107410B1 FR 3107410 B1 FR3107410 B1 FR 3107410B1 FR 2101442 A FR2101442 A FR 2101442A FR 2101442 A FR2101442 A FR 2101442A FR 3107410 B1 FR3107410 B1 FR 3107410B1
Authority
FR
France
Prior art keywords
radio frequency
voltage
power amplifier
radiofrequency signal
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2101442A
Other languages
English (en)
Other versions
FR3107410A1 (fr
Inventor
Hervé Guegnaud
Stéphanie Venec
Guillaume Blamon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics International NV Switzerland
Original Assignee
STMicroelectronics International NV Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics International NV Switzerland filed Critical STMicroelectronics International NV Switzerland
Publication of FR3107410A1 publication Critical patent/FR3107410A1/fr
Application granted granted Critical
Publication of FR3107410B1 publication Critical patent/FR3107410B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • H03F1/523Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/135Indexing scheme relating to amplifiers there being a feedback over one or more internal stages in the global amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/18Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/211Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/393A measuring circuit being coupled to the output of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/426Indexing scheme relating to amplifiers the amplifier comprising circuitry for protection against overload
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/78A comparator being used in a controlling circuit of an amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Selon un aspect, il est proposé un circuit intégré comprenant un amplificateur de puissance comportant : - une succession d’au moins deux étages amplificateurs (DS, PS) comportant un premier étage amplificateur (DS) configuré pour recevoir en entrée un signal radiofréquence et un dernier étage amplificateur (PS) configuré pour délivrer en sortie un signal radiofréquence amplifié, - un circuit de sûreté comprenant : ○ des moyens de contrôle (CM) configurés pour comparer une tension du signal radiofréquence amplifié (RFAMP) à une tension seuil (VTH),○ des moyens de réduction (GRM) de gain configurés pour réduire une tension de polarisation d’un étage amplificateur en amont (DS) du dernier étage (PS) lorsque la tension du signal radiofréquence amplifié (RFAMP) est supérieure à la tension seuil (VTH). Figure pour l’abrégé : Fig 1
FR2101442A 2020-02-17 2021-02-15 Amplificateur de puissance radiofrequence Active FR3107410B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20157684.0 2020-02-17
EP20157684 2020-02-17

Publications (2)

Publication Number Publication Date
FR3107410A1 FR3107410A1 (fr) 2021-08-20
FR3107410B1 true FR3107410B1 (fr) 2022-05-06

Family

ID=69631461

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2101442A Active FR3107410B1 (fr) 2020-02-17 2021-02-15 Amplificateur de puissance radiofrequence

Country Status (5)

Country Link
US (1) US20230082905A1 (fr)
EP (1) EP4107856A1 (fr)
CN (1) CN115136490A (fr)
FR (1) FR3107410B1 (fr)
WO (1) WO2021165212A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240145003A (ko) * 2022-02-23 2024-10-04 코르보 유에스, 인크. 보호 루프를 갖는 전력 증폭기

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1696558A1 (fr) * 2005-02-25 2006-08-30 STMicroelectronics S.r.l. Circuit de protection pour transistor de l'étage de sortie d'un amplificateur RF de puissance
US9559639B2 (en) * 2009-08-19 2017-01-31 Qualcomm Incorporated Protection circuit for power amplifier

Also Published As

Publication number Publication date
WO2021165212A1 (fr) 2021-08-26
US20230082905A1 (en) 2023-03-16
EP4107856A1 (fr) 2022-12-28
FR3107410A1 (fr) 2021-08-20
CN115136490A (zh) 2022-09-30

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