FR3102884B1 - Dispositif memoire non volatile selecteur et procede de lecture associe - Google Patents

Dispositif memoire non volatile selecteur et procede de lecture associe Download PDF

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Publication number
FR3102884B1
FR3102884B1 FR1912328A FR1912328A FR3102884B1 FR 3102884 B1 FR3102884 B1 FR 3102884B1 FR 1912328 A FR1912328 A FR 1912328A FR 1912328 A FR1912328 A FR 1912328A FR 3102884 B1 FR3102884 B1 FR 3102884B1
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FR
France
Prior art keywords
memory device
reading process
associated reading
selector memory
volatile selector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1912328A
Other languages
English (en)
Other versions
FR3102884A1 (fr
Inventor
Gabriele Navarro
Anthonin Verdy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1912328A priority Critical patent/FR3102884B1/fr
Priority to PCT/EP2020/080673 priority patent/WO2021089478A1/fr
Priority to US17/774,017 priority patent/US11923006B2/en
Priority to EP20797149.0A priority patent/EP4055605A1/fr
Priority to CN202080086299.0A priority patent/CN114830238A/zh
Publication of FR3102884A1 publication Critical patent/FR3102884A1/fr
Application granted granted Critical
Publication of FR3102884B1 publication Critical patent/FR3102884B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

DISPOSITIF MEMOIRE NON VOLATILE SELECTEUR ET PROCEDE DE LECTURE ASSOCIE L’invention concerne un dispositif (1) mémoire non volatile et sélecteur comportant une première électrode (3), une seconde électrode (4) et au moins une couche (2) réalisée dans un matériau actif. Le dispositif (1) présente au moins deux états mémoire programmables associés à deux tensions de seuil et assure également un rôle de sélecteur quand il est dans un état fortement résistif. Figure à publier avec l’abrégé : Figure 4
FR1912328A 2019-11-04 2019-11-04 Dispositif memoire non volatile selecteur et procede de lecture associe Active FR3102884B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1912328A FR3102884B1 (fr) 2019-11-04 2019-11-04 Dispositif memoire non volatile selecteur et procede de lecture associe
PCT/EP2020/080673 WO2021089478A1 (fr) 2019-11-04 2020-11-02 Dispositif memoire non volatile selecteur et procede de lecture associe
US17/774,017 US11923006B2 (en) 2019-11-04 2020-11-02 Selective non-volatile memory device and associated reading method
EP20797149.0A EP4055605A1 (fr) 2019-11-04 2020-11-02 Dispositif memoire non volatile selecteur et procede de lecture associe
CN202080086299.0A CN114830238A (zh) 2019-11-04 2020-11-02 选择性非易失性存储器器件及相关联的读取方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1912328A FR3102884B1 (fr) 2019-11-04 2019-11-04 Dispositif memoire non volatile selecteur et procede de lecture associe
FR1912328 2019-11-04

Publications (2)

Publication Number Publication Date
FR3102884A1 FR3102884A1 (fr) 2021-05-07
FR3102884B1 true FR3102884B1 (fr) 2021-11-12

Family

ID=70008615

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1912328A Active FR3102884B1 (fr) 2019-11-04 2019-11-04 Dispositif memoire non volatile selecteur et procede de lecture associe

Country Status (5)

Country Link
US (1) US11923006B2 (fr)
EP (1) EP4055605A1 (fr)
CN (1) CN114830238A (fr)
FR (1) FR3102884B1 (fr)
WO (1) WO2021089478A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100514695C (zh) * 2002-03-15 2009-07-15 阿克松技术公司 微电子可编程构件
US20040257848A1 (en) 2003-06-18 2004-12-23 Macronix International Co., Ltd. Method for adjusting the threshold voltage of a memory cell
KR102532201B1 (ko) * 2016-07-22 2023-05-12 삼성전자 주식회사 메모리 소자
WO2018066320A1 (fr) * 2016-10-04 2018-04-12 ソニーセミコンダクタソリューションズ株式会社 Elément de commutation, dispositif de stockage et système de mémoire

Also Published As

Publication number Publication date
US11923006B2 (en) 2024-03-05
WO2021089478A1 (fr) 2021-05-14
US20220366981A1 (en) 2022-11-17
EP4055605A1 (fr) 2022-09-14
CN114830238A (zh) 2022-07-29
FR3102884A1 (fr) 2021-05-07

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