FR3101974B1 - Procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur - Google Patents

Procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur Download PDF

Info

Publication number
FR3101974B1
FR3101974B1 FR1911437A FR1911437A FR3101974B1 FR 3101974 B1 FR3101974 B1 FR 3101974B1 FR 1911437 A FR1911437 A FR 1911437A FR 1911437 A FR1911437 A FR 1911437A FR 3101974 B1 FR3101974 B1 FR 3101974B1
Authority
FR
France
Prior art keywords
microcontroller
volatile memory
assisting
identification
sector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1911437A
Other languages
English (en)
Other versions
FR3101974A1 (fr
Inventor
Stéphane Laborie-Fulchic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vitesco Technologies GmbH
Original Assignee
Continental Automotive France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Automotive France SAS filed Critical Continental Automotive France SAS
Priority to FR1911437A priority Critical patent/FR3101974B1/fr
Priority to CN202080072115.5A priority patent/CN114514511A/zh
Priority to US17/637,143 priority patent/US20220283726A1/en
Priority to PCT/EP2020/078198 priority patent/WO2021073990A1/fr
Publication of FR3101974A1 publication Critical patent/FR3101974A1/fr
Application granted granted Critical
Publication of FR3101974B1 publication Critical patent/FR3101974B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
    • G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1016—Performance improvement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7205—Cleaning, compaction, garbage collection, erase control
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7207—Details relating to flash memory management management of metadata or control data
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604—Improving or facilitating administration, e.g. storage management
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

Il est divulgué un procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur, le procédé consiste, à chaque réception (401) d’une commande d’écriture ou d’effacement d’un secteur déterminé de la matrice de cellules de mémoire d’une mémoire non-volatile, à écrire (403) dans une cellule de mémoire déterminée registre du microcontrôleur, associée au secteur déterminé, une information représentative du fait que le secteur a été écrit ou effacé, c’est-à-dire du fait que le secteur en question est écrit ou vierge. Figure 4
FR1911437A 2019-10-15 2019-10-15 Procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur Active FR3101974B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1911437A FR3101974B1 (fr) 2019-10-15 2019-10-15 Procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur
CN202080072115.5A CN114514511A (zh) 2019-10-15 2020-10-08 帮助识别微控制器的非易失性存储器的空白扇区的方法
US17/637,143 US20220283726A1 (en) 2019-10-15 2020-10-08 Method for assisting in the identification of blank sectors of a non-volatile memory of a microcontroller
PCT/EP2020/078198 WO2021073990A1 (fr) 2019-10-15 2020-10-08 Procede d'aide a l'identification de secteurs vierges d'une memoire non-volatile d'un microcontroleur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1911437A FR3101974B1 (fr) 2019-10-15 2019-10-15 Procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur
FR1911437 2019-10-15

Publications (2)

Publication Number Publication Date
FR3101974A1 FR3101974A1 (fr) 2021-04-16
FR3101974B1 true FR3101974B1 (fr) 2021-09-10

Family

ID=69572092

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1911437A Active FR3101974B1 (fr) 2019-10-15 2019-10-15 Procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur

Country Status (4)

Country Link
US (1) US20220283726A1 (fr)
CN (1) CN114514511A (fr)
FR (1) FR3101974B1 (fr)
WO (1) WO2021073990A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116737089B (zh) * 2023-08-15 2023-11-21 北京紫光芯能科技有限公司 配置数据的存储方法、装置和系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222779B1 (en) * 1998-04-24 2001-04-24 Kabushiki Kaisha Toshiba Semiconductor storage device with automatic write/erase function
GB9903490D0 (en) * 1999-02-17 1999-04-07 Memory Corp Plc Memory system
TW201015565A (en) * 2008-10-03 2010-04-16 Via Telecom Inc Memory wear leveling method, system and device
TWI375887B (en) * 2008-10-31 2012-11-01 A Data Technology Co Ltd Flash memory device with wear-leveling mechanism and controlling method thereof
US9652376B2 (en) * 2013-01-28 2017-05-16 Radian Memory Systems, Inc. Cooperative flash memory control
US9679658B2 (en) * 2015-06-26 2017-06-13 Intel Corporation Method and apparatus for reducing read latency for a block erasable non-volatile memory

Also Published As

Publication number Publication date
US20220283726A1 (en) 2022-09-08
FR3101974A1 (fr) 2021-04-16
CN114514511A (zh) 2022-05-17
WO2021073990A1 (fr) 2021-04-22

Similar Documents

Publication Publication Date Title
KR102293078B1 (ko) 불휘발성 메모리 장치
CN100547688C (zh) 非易失性存储装置的编程校验方法
US9892792B2 (en) Operating method of a nonvolatile memory device
JP5072723B2 (ja) 不揮発性半導体記憶装置
KR101891164B1 (ko) 프로그램 스케줄러를 포함하는 플래시 메모리 장치
US20200193277A1 (en) Non-volatile memory device including arithmetic circuitry for neural network processing and neural network system including the same
US9418747B2 (en) Nonvolatile memory device maintaining a bitline precharge during program verification periods for multi-level memory cells and related programming method
KR102358053B1 (ko) 복수의 불휘발성 메모리 칩들을 포함하는 스토리지 장치
JP6422510B2 (ja) 閾値電圧解析
KR102333738B1 (ko) 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법
KR20190059154A (ko) 셀 스트링의 선택 트랜지스터를 프로그램함으로 데이터를 보호하는 플래시 메모리 장치 및 그것을 포함하는 데이터 저장 장치
TW202028988A (zh) 管理快閃記憶體模組的方法及相關的快閃記憶體控制器與電子裝置
KR20210155660A (ko) 메모리 장치 및 이의 제어 방법
FR3101974B1 (fr) Procédé d’aide à l’identification de secteurs vierges d’une mémoire non-volatile d’un microcontrôleur
JP4209219B2 (ja) 不揮発性半導体記憶装置および記憶装置並びに不良記憶素子検出修復方法
KR100855964B1 (ko) 플래시 메모리 장치 및 플래시 메모리의 독출 방법
US20030133327A1 (en) Nonvolatile semiconductor storage device having a shortened time required for a data erasing operation and data erasing method thereof
US8059464B2 (en) Nonvolatile memory device, methods of programming the nonvolatile memory device and memory system including the same
KR20210067677A (ko) 메모리 장치 및 그 동작 방법
US20140208187A1 (en) Semiconductor apparatus and method of operating the same
CN112988052A (zh) 存储器装置及其操作方法
JPH0628875A (ja) フラッシュ型ｅ２ ｐｒｏｍの消去方法
CN112530496A (zh) 存储器设备及其操作方法
WO2019136978A1 (fr) Procédé d'amélioration de la disponibilité d'une mémoire flash
US11894057B2 (en) Memory device performing program operation and method of operating the same

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20210416

TP Transmission of property

Owner name: VITESCO TECHNOLOGIES, DE

Effective date: 20210629

PLFP Fee payment

Year of fee payment: 3

CA Change of address

Effective date: 20220103

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5