FR3092435B1 - VCSEL side oxidation furnace with correction of substrate arc curvature - Google Patents

VCSEL side oxidation furnace with correction of substrate arc curvature Download PDF

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Publication number
FR3092435B1
FR3092435B1 FR1901041A FR1901041A FR3092435B1 FR 3092435 B1 FR3092435 B1 FR 3092435B1 FR 1901041 A FR1901041 A FR 1901041A FR 1901041 A FR1901041 A FR 1901041A FR 3092435 B1 FR3092435 B1 FR 3092435B1
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FR
France
Prior art keywords
oxidation chamber
correction
oxidation furnace
arc curvature
side oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1901041A
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French (fr)
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FR3092435A1 (en
Inventor
Pierre Bonnard
Xavier Brun
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Aloxtec
Original Assignee
Aloxtec
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Filing date
Publication date
Application filed by Aloxtec filed Critical Aloxtec
Priority to FR1901041A priority Critical patent/FR3092435B1/en
Priority to PCT/EP2020/052641 priority patent/WO2020161084A1/en
Publication of FR3092435A1 publication Critical patent/FR3092435A1/en
Application granted granted Critical
Publication of FR3092435B1 publication Critical patent/FR3092435B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Abstract

Ce four (1) comporte : - une chambre d’oxydation (2), comprenant une atmosphère (20) ; - des moyens d’injection (3), agencés pour injecter un flux gazeux humide dans la chambre d’oxydation (2) de sorte que l’atmosphère (20) de la chambre d’oxydation (2) exerce une première pression ; - un support chauffant (4), de type suscepteur, agencé dans la chambre d’oxydation (2), et comprenant une surface supérieure (40) destinée à supporter un substrat (S) comprenant des VCSEL ; - un circuit de pompage (C), configuré pour créer une dépression à la surface supérieure (40) du support chauffant (4) de sorte que l’atmosphère (20) de la chambre d’oxydation (2) exerce localement une seconde pression, strictement inférieure à la première pression. Figure 1This furnace (1) comprises: - an oxidation chamber (2), comprising an atmosphere (20); - injection means (3), arranged to inject a wet gas flow into the oxidation chamber (2) so that the atmosphere (20) of the oxidation chamber (2) exerts a first pressure; - a heating support (4), of the susceptor type, arranged in the oxidation chamber (2), and comprising an upper surface (40) intended to support a substrate (S) comprising VCSELs; - a pumping circuit (C), configured to create a depression on the upper surface (40) of the heating support (4) so that the atmosphere (20) of the oxidation chamber (2) locally exerts a second pressure , strictly less than the first pressure. Figure 1

FR1901041A 2019-02-04 2019-02-04 VCSEL side oxidation furnace with correction of substrate arc curvature Expired - Fee Related FR3092435B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1901041A FR3092435B1 (en) 2019-02-04 2019-02-04 VCSEL side oxidation furnace with correction of substrate arc curvature
PCT/EP2020/052641 WO2020161084A1 (en) 2019-02-04 2020-02-03 Vcsel lateral oxidation furnace with correction of the substrate arc curvature

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1901041 2019-02-04
FR1901041A FR3092435B1 (en) 2019-02-04 2019-02-04 VCSEL side oxidation furnace with correction of substrate arc curvature

Publications (2)

Publication Number Publication Date
FR3092435A1 FR3092435A1 (en) 2020-08-07
FR3092435B1 true FR3092435B1 (en) 2021-02-12

Family

ID=67107718

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1901041A Expired - Fee Related FR3092435B1 (en) 2019-02-04 2019-02-04 VCSEL side oxidation furnace with correction of substrate arc curvature

Country Status (2)

Country Link
FR (1) FR3092435B1 (en)
WO (1) WO2020161084A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3358549B2 (en) * 1998-07-08 2002-12-24 信越半導体株式会社 Method for manufacturing semiconductor wafer and wafer chuck
US7604439B2 (en) * 2004-04-14 2009-10-20 Coreflow Scientific Solutions Ltd. Non-contact support platforms for distance adjustment
JP4485972B2 (en) * 2005-02-15 2010-06-23 株式会社リコー Semiconductor oxidation apparatus and semiconductor element manufacturing method
JP4899879B2 (en) * 2007-01-17 2012-03-21 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium
US9558932B2 (en) 2014-06-17 2017-01-31 California Scientific, Inc. Lateral wafer oxidation system with in-situ visual monitoring and method therefor
JP2016127086A (en) * 2014-12-26 2016-07-11 東京エレクトロン株式会社 Substrate adsorption auxiliary member and substrate feeding device
KR102467605B1 (en) * 2017-06-28 2022-11-16 도쿄엘렉트론가부시키가이샤 Heat treatment apparatus, method of managing heat treatment apparatus, and storage medium

Also Published As

Publication number Publication date
WO2020161084A1 (en) 2020-08-13
FR3092435A1 (en) 2020-08-07

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