FR3091274B1 - Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations - Google Patents

Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations Download PDF

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Publication number
FR3091274B1
FR3091274B1 FR1874171A FR1874171A FR3091274B1 FR 3091274 B1 FR3091274 B1 FR 3091274B1 FR 1874171 A FR1874171 A FR 1874171A FR 1874171 A FR1874171 A FR 1874171A FR 3091274 B1 FR3091274 B1 FR 3091274B1
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FR
France
Prior art keywords
nanocrystals
preparation process
doped semiconductors
oxidation state
representing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1874171A
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English (en)
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FR3091274A1 (fr
Inventor
Tugce Akdas
Peter Reiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Application filed by Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority to FR1874171A priority Critical patent/FR3091274B1/fr
Priority to PCT/FR2019/053287 priority patent/WO2020136347A1/fr
Priority to US17/418,347 priority patent/US11905446B2/en
Priority to CN201980092678.8A priority patent/CN113498405A/zh
Priority to EP19850730.3A priority patent/EP3883884A1/fr
Publication of FR3091274A1 publication Critical patent/FR3091274A1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Luminescent Compositions (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

La présente invention concerne un ensemble de nanocristaux comprenant un semi-conducteur comprenant A représentant un métal ou métalloïde à l’état d’oxydation +III et B représentant un élément à l’état d’oxydation –III, lesdits nanocristaux étant dopés, en moyenne par nanocristal, par un atome de C choisi parmi les métaux de transition à l’état d’oxydation +I ou +II. La présente invention concerne également son procédé de préparation et ses différentes utilisations.
FR1874171A 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations Active FR3091274B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1874171A FR3091274B1 (fr) 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations
PCT/FR2019/053287 WO2020136347A1 (fr) 2018-12-26 2019-12-23 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations
US17/418,347 US11905446B2 (en) 2018-12-26 2019-12-23 Doped semiconductor nanocrystals, method for preparing same and uses thereof
CN201980092678.8A CN113498405A (zh) 2018-12-26 2019-12-23 掺杂的半导体纳米晶体、其制备方法及其应用
EP19850730.3A EP3883884A1 (fr) 2018-12-26 2019-12-23 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1874171A FR3091274B1 (fr) 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations

Publications (2)

Publication Number Publication Date
FR3091274A1 FR3091274A1 (fr) 2020-07-03
FR3091274B1 true FR3091274B1 (fr) 2023-04-28

Family

ID=66867321

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1874171A Active FR3091274B1 (fr) 2018-12-26 2018-12-26 Nanocristaux de semi-conducteurs dopés, leur procédé de préparation et leurs utilisations

Country Status (5)

Country Link
US (1) US11905446B2 (fr)
EP (1) EP3883884A1 (fr)
CN (1) CN113498405A (fr)
FR (1) FR3091274B1 (fr)
WO (1) WO2020136347A1 (fr)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985173A (en) * 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US6090200A (en) * 1997-11-18 2000-07-18 Gray; Henry F. Nanoparticle phosphors manufactured using the bicontinuous cubic phase process
US7175778B1 (en) * 2002-05-10 2007-02-13 Nanocrystals Technology Lp Self-aligning QCA based nanomaterials
DE112006001067T5 (de) * 2005-04-25 2008-03-13 Board Of Trustees Of The University Of Arkansas Dotierte Halbleiter-Nanokristalle und Verfahren zu deren Herstellung
FR2930786B1 (fr) * 2008-05-05 2010-12-31 Commissariat Energie Atomique Procede de preparation de nanocristaux luminescents, nanocristaux ainsi obtenus et leurs utilisations
FR2937885B1 (fr) 2008-11-04 2011-05-06 Commissariat Energie Atomique Nanoparticules fluorescentes, leur procede de preparation et leur application en marquage biologique
EP2449052A1 (fr) * 2009-07-01 2012-05-09 The Board of Trustees of The University of Arkansas Nanocristaux semi-conducteurs dopés par un métal et leurs procédés de fabrication
US9543385B2 (en) * 2011-02-14 2017-01-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Heavily doped semiconductor nanoparticles
CN102908961B (zh) * 2012-09-10 2014-08-27 上海交通大学医学院附属新华医院 功能性纳米颗粒复合非交联微球及其制备方法和应用
US11142692B2 (en) * 2015-07-28 2021-10-12 The Regents Of The University Of California Capped co-doped core/shell nanocrystals for visible light emission
CN105460903B (zh) * 2015-09-22 2016-11-23 苏州星烁纳米科技有限公司 一种纳米晶体制备方法、纳米晶体及气体溶液的制备和保存装置

Also Published As

Publication number Publication date
CN113498405A (zh) 2021-10-12
WO2020136347A1 (fr) 2020-07-02
US20220064525A1 (en) 2022-03-03
FR3091274A1 (fr) 2020-07-03
US11905446B2 (en) 2024-02-20
EP3883884A1 (fr) 2021-09-29

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