FR3083362B1 - Procede de programmation d'un dispositif de memoire non volatile et dispositif de memoire non volatile correspondant - Google Patents

Procede de programmation d'un dispositif de memoire non volatile et dispositif de memoire non volatile correspondant Download PDF

Info

Publication number
FR3083362B1
FR3083362B1 FR1855927A FR1855927A FR3083362B1 FR 3083362 B1 FR3083362 B1 FR 3083362B1 FR 1855927 A FR1855927 A FR 1855927A FR 1855927 A FR1855927 A FR 1855927A FR 3083362 B1 FR3083362 B1 FR 3083362B1
Authority
FR
France
Prior art keywords
programming
memory device
volatile memory
profile
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1855927A
Other languages
English (en)
Other versions
FR3083362A1 (fr
Inventor
Rissetto Leonardo Valencia
Roux Elise Le
Christophe Forel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics International NV Switzerland
Original Assignee
STMicroelectronics Grenoble 2 SAS
STMicroelectronics Alps SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Grenoble 2 SAS, STMicroelectronics Alps SAS filed Critical STMicroelectronics Grenoble 2 SAS
Priority to FR1855927A priority Critical patent/FR3083362B1/fr
Priority to US16/432,369 priority patent/US10832780B2/en
Publication of FR3083362A1 publication Critical patent/FR3083362A1/fr
Application granted granted Critical
Publication of FR3083362B1 publication Critical patent/FR3083362B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)

Abstract

Procédé de programmation d'un groupe de N cellules-mémoire d'un dispositif de mémoire non volatile sur une fenêtre de programmation ayant une durée supérieure à la durée de programmation d'une cellule-mémoire , comprenant une subdivision de ladite fenêtre de programmation en M intervalles temporels, M étant supérieur à deux, une détermination par simulation (S1), en tenant compte d'un critère de référence, d'un profil de programmation (PRP) comportant pour chaque intervalle temporel, un nombre maximum de cellules-mémoires dont la programmation peut être déclenchée au sein de cet intervalle temporel, un stockage (S2) du profil de programmation dans le dispositif de mémoire (1), et une programmation du dispositif de mémoire sur ladite fenêtre de programmation, par intervalle, en utilisant ledit profil de programmation (PRP).
FR1855927A 2018-06-29 2018-06-29 Procede de programmation d'un dispositif de memoire non volatile et dispositif de memoire non volatile correspondant Active FR3083362B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1855927A FR3083362B1 (fr) 2018-06-29 2018-06-29 Procede de programmation d'un dispositif de memoire non volatile et dispositif de memoire non volatile correspondant
US16/432,369 US10832780B2 (en) 2018-06-29 2019-06-05 Method for programming a non-volatile memory device and corresponding non-volatile memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1855927 2018-06-29
FR1855927A FR3083362B1 (fr) 2018-06-29 2018-06-29 Procede de programmation d'un dispositif de memoire non volatile et dispositif de memoire non volatile correspondant

Publications (2)

Publication Number Publication Date
FR3083362A1 FR3083362A1 (fr) 2020-01-03
FR3083362B1 true FR3083362B1 (fr) 2021-08-06

Family

ID=63963147

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1855927A Active FR3083362B1 (fr) 2018-06-29 2018-06-29 Procede de programmation d'un dispositif de memoire non volatile et dispositif de memoire non volatile correspondant

Country Status (2)

Country Link
US (1) US10832780B2 (fr)
FR (1) FR3083362B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6606267B2 (en) * 1998-06-23 2003-08-12 Sandisk Corporation High data rate write process for non-volatile flash memories
US8327062B2 (en) * 2008-12-09 2012-12-04 Infineon Technologies Ag Memory circuit and method for programming in parallel a number of bits within data blocks
FR3080703B1 (fr) * 2018-04-27 2020-04-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de programmation d'une memoire resistive

Also Published As

Publication number Publication date
US20200005872A1 (en) 2020-01-02
US10832780B2 (en) 2020-11-10
FR3083362A1 (fr) 2020-01-03

Similar Documents

Publication Publication Date Title
Dimos et al. The effectiveness of R&D subsidies: A meta-regression analysis of the evaluation literature
Andersson et al. The spatial structure of bacterial communities is influenced by historical environmental conditions
EP3711054A4 (fr) Réduction de perturbation de lecture dans un dispositif de mémoire à deux niveaux par modification de la durée de décharge de canal sur la base d'une ligne de mots sélectionnée
EP3889870A4 (fr) Procédé et système d'architecture d'arrière-plan pour paiement avec agrégation, dispositif informatique, et support de stockage
Francq et al. Measurement methods comparison with errors-in-variables regressions. From horizontal to vertical OLS regression, review and new perspectives
Furlan et al. Experimental repetitions and blockage of large stems at ogee crested spillways with piers
FR3049380B1 (fr) Amelioration des performances en lecture d'un dispositif de memoire non volatile, en particulier un dispositif de memoire non volatile avec transistor de selection enterre
EP3522390A4 (fr) Procédé d'indication de rang, procédé, dispositif et système de compte rendu d'indication de rang, et support de stockage
Granata et al. Novel approach for side weirs in supercritical flow
Jin et al. Modeling blockage failures in sewer systems to support maintenance decision making
EP3595500A4 (fr) Système de recirculation d'eau comprenant un agencement de détermination d'eau de référence et procédé de réglage de température de l'eau dans un tel système
Stewart‐Koster et al. Incorporating ecological principles into statistical models for the prediction of species’ distribution and abundance
FR3072494B1 (fr) Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables
Chow et al. Evaluation of stormwater runoff quality during monsoon and inter-monsoon seasons at tropical urban catchments
Courter et al. Benefits of prescribed flows for salmon smolt survival enhancement vary longitudinally in a highly managed river system
Poncelet et al. The Quantile Solidarity approach for the parsimonious regionalization of flow duration curves
Avanzi et al. Optimal dividends under Erlang (2) inter-dividend decision times
Rom et al. Material loads from the Jordan River
Male et al. Low flows of Massachusetts streams
Nazeri-Tahroudi et al. Evaluation of 30 years changing of river flow discharges in Urmia Lake Basin
Herr et al. Addendum to Bayesian ensemble forecast of river stages and ensemble size requirements
Cumming et al. Never Raise Your Voice Again
Fadlelmawla et al. Hydrogeochemical Investigations of Recharge and Subsequent Salinization Processes at AI-Raudhatain Depression in Kuwait
Fricke et al. 10 years spectrometry based P-RTC in Wuppertal-experiences and enhancements
Turner Reconnecting the River: Upstream inputs and downstream impacts of a large-scale coastal freshwater diversion

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20200103

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

TP Transmission of property

Owner name: STMICROELECTRONICS INTERNATIONAL N.V., CH

Effective date: 20230612

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9