FR3082660A1 - MODULAR POWER SWITCHING ELEMENT AND DEMOUNTABLE ASSEMBLY OF SEVERAL MODULAR ELEMENTS - Google Patents

Abstract

The modular element (1A, 1B) comprises laminated blocks (BHA, BLA) assembled in an antisymmetrical configuration relative to a junction plane (JC). Each of the laminated blocks comprises an electronic chip (CPH, CPL) implanted in a stratification between an external composite plate (PEHA, PELA) and an internal composite plate (PIHA, PILA) separated by an intermediate dielectric layer (CDHA, CDLA). The external and internal composite plates each have electric conduction buses (BEH +, BEL +, BEH-, BEL-; BIH +, BIL +, BIH-, BIL-, BCH, BCL) and each power switch electronic chip has one side comprising first and second power electrodes (D1, D2, S1, S2) and a switching control electrode (G1, G2). The first and second power electrodes are electrically connected to first (BIH +, BCL) and second (BCH, BIL-) internal electric conduction buses of the internal composite plate. According to the invention, a plurality of orifices (OG1 to OG5, OG20, OG40) each comprising an electrically conductive internal layer (CI) extend into the laminated blocks from the external faces of their external composite plates, the plurality of orifices comprising at least first and second orifices (OG2, OG4) each communicating with a respective switching control electrode of the electronic chips and at least first, second and third pluralities of orifices (OG1, OG3, OG5) completely passing through the laminated blocks, electrically interconnecting electric conduction buses of the laminated blocks and having a fixed spacing pitch between the orifices.

Description

MODULAR POWER SWITCHING ELEMENT AND REMOVABLE ASSEMBLY OF SEVERAL MODULAR ELEMENTS [001] The invention relates generally to the field of power electronics. More particularly, the invention relates to modular power switching elements and to removable assemblies of such modular elements.

The power switching modules form the basic building blocks necessary for the construction of electronic power devices. These power switching modules can be combined to form switching bridges or associated in parallel to pass the desired current. The switching bridge branches composed of two electronic power switches are elementary power modules very widely used for the production of electronic power devices such as inverters and power converters.

Current needs are pushing for a search for more modularity, in particular to allow the realization of different circuits, from the simplest to the most complex, from the same modular brick, increase standardization and reduce costs. In addition, more modularity makes it possible to reduce the value of the manufacturing scrap, taking into account the possibility of testing functionality at the level of elementary bricks.

The compactness of the power switching modules is an essential characteristic, not only for reducing material costs, but also for achieving the best design compromises. Indeed, the compactness is favorable in particular to the reduction of resistive and inductive parasitic elements. The reduction of parasitic inductances, especially in power bus bars, is important to protect circuits against potentially destructive overvoltages, improve control of electromagnetic radiation, reduce the heat generated and increase the switching speed.

The compactness of the architectures is also required for the judicious use of new power semiconductors, such as today silicon carbide (SiC) and gallium nitride (GaN) and, soon, diamond. Indeed, the higher power densities and switching frequencies provided by the new power semiconductors lead to more compactness.

3D architectures are of definite interest in increasing the compactness of modules and electronic power devices. However, cooling constraints are critical in these architectures and efficient solutions must be implemented. Extraction of the dissipated energy as close as possible to the power chips is necessary in order to keep the temperatures of the components below critical values and guarantee thermal equilibrium. Double-sided cooling of the power chips is desirable. Efficient cooling devices using heat transfer liquid and / or using heat pipes may be required.

The architectures which facilitate the realization of devices of the so-called "SiP" type (for "System in Package" in English) are interesting for the benefit which they bring in terms of level of integration and compactness. An architecture of a power switching module which allows flexibility in the spatial location of the electrodes is advantageous for the production of “SiP” devices.

The demountability of the architectures, down to the most basic brick possible, is a significant asset for repairability. The so-called press-pack technology, in which the electrical contacts are ensured using mechanical pressure or clamping means, makes it possible to produce testable and replaceable elementary bricks, while bringing an improvement in reliability in thermal cycling applications. severe, by eliminating welds.

It now appears desirable to propose a power switching module having a new architecture of elementary switching brick, suitable for removable assemblies of parallel and / or stacked type, the new power semiconductors SiC and GaN, in particular GaN transistors with lateral structure, as well as 3D and “press-pack” technologies, and economical mass production based on PCB manufacturing technologies.

According to a first aspect, the invention relates to a modular power switching element comprising first and second laminated blocks assembled in an asymmetrical configuration relative to a junction plane, each of the first and second laminated blocks comprising an electronic chip power switching implanted in a stratification between an external composite plate and an internal composite plate separated by an intermediate dielectric layer, the external and internal composite plates each having electric conduction buses, each electronic power switching chip having a face comprising first and second power electrodes and a switching control electrode, and the first and second power electrodes being electrically connected to respective first and second internal electrical conduction buses of the internal composite plate. According to the invention, a plurality of orifices each comprising an electrically conductive internal layer extend into the first and second laminated blocks from external faces of their external composite plates, the plurality of orifices comprising at least first and second orifices each communicating with a respective switching control electrode of the power switching microchips and at least the first, second and third pluralities of orifices completely passing through the first and second laminated blocks, electrically interconnecting electrical conduction buses of the first and second laminated blocks and having a fixed spacing between the orifices.

According to an embodiment of particular interest, the power switching electronic chips are lateral type transistor chips.

According to a particular characteristic, the first plurality of orifices electrically interconnect the first internal bus of electrical conduction of the internal composite plate of the first laminated block to first external buses of electrical conduction of the external composite plates of the first and second laminated blocks .

According to another particular characteristic, the second plurality of orifices electrically interconnect the second internal bus of electrical conduction of the internal composite plate of the second laminated block to second external buses of electrical conduction of the external composite plates of the first and second blocks laminates.

According to yet another particular characteristic, the third plurality of orifices electrically interconnect the second internal electrical conduction bus and the first internal electrical conduction bus of the internal composite plates of the first and second laminated blocks.

According to yet another particular characteristic, the plurality of orifices also includes third and fourth orifices which extend into the first and second laminated blocks from the external faces of their external composite plates, the third and fourth orifices being connected respectively by electrically conductive tracks at the first and second orifices communicating with the switching control electrodes of the power switching electronic chips.

According to another aspect, the invention also relates to a removable power switching assembly comprising at least two modular power switching elements as briefly described above, and a plurality of electrically conductive assembly pins, in wherein the electrically conductive assembly pins are inserted into the orifices of the modular power switching elements and provide mechanical assembly and electrical connection functions between the modular power switching elements.

According to a particular characteristic, the removable power switching assembly comprises a fluid circulation channel formed by a spacing between the modular power switching elements, said spacing being obtained by means of the electrically conductive assembly pins.

According to another particular characteristic, the removable power switching assembly also comprises at least one assembly and interconnection element interposed between the modular power switching elements, the assembly and interconnection element comprising at least one electrically conductive bar in which are arranged a plurality of through orifices, the through orifices being distributed with the fixed spacing pitch and receiving conductive assembly pins.

According to yet another particular characteristic, the assembly and interconnection element comprises at least two electrically conductive bars, the electrically conductive bars being arranged with a spacing determined between them so as to form a fluid circulation channel .

Other advantages and characteristics of the present invention will appear more clearly on reading the detailed description below of several particular embodiments of the invention, with reference to the accompanying drawings, in which:

Fig.1 is a perspective view showing the architecture of a power switching module according to the prior art;

Fig.2 is a simplified sectional view showing a removable assembly of two modular power switching elements according to the invention, in a particular embodiment;

Fig.3 is a simplified electrical diagram of the modular power switching elements of Fig.2;

Fig.4 shows in top view and in section of the drain, source and gate electrodes present on the same face in a lateral type transistor chip;

Figs.5A to 5F are simplified top views showing different laminated composite plates included in the modular power switching element of Fig.2;

Fig. 6 is a partial sectional view showing the connection to a gate electrode of the transistor chip by means of orifices comprising a conductive layer, from the top and bottom faces of the modular power switching element of Fig.2;

Fig.7 is a simplified sectional view showing a first embodiment of an assembly and interconnection element usable for the production of removable power switching assemblies according to the invention;

Fig.8 is a simplified sectional view showing another embodiment of a removable power switching assembly according to the invention, comprising assembly and interconnection elements as shown in Fig.7; and Fig.9 is a simplified sectional view showing a second embodiment of an assembly and interconnection element usable for the production of power switching assemblies according to the invention.

In the prior art, the encapsulation of power chips for the production of power switching modules makes great use of a technology derived from the technology called "IMS" (for "Insulated Metal Substrate >> ). The chip is implanted in a sandwich structure between two conductive copper plates. Copper electroplating and silver sintering techniques are used for the electrical interconnection of the chip. Dielectrics composed of epoxy resins, reinforced or not reinforced with fiberglass, or polyimides, are used for electrical insulation. Laser cutting and drilling are frequently used for material removal. Copper tracks and pads for electrical interconnection are typically obtained by wet etching of a copper foil.

Thus, as shown by the example of the state of the art in FIG. 1, the 3D stacking of a power switching module PM formed by a switching bridge branch comprises transistor chips Ths and T _L s, bus bars + DC and -DC, a central bus bus OUT, conductive interconnection sheets CGu and CGl and dielectric layers of electrical insulation IS1 u, IS2u and IS1 _L , IS2 _L. The bus bars + DC, DC and OUT and the conductive interconnection sheets CGu and CGl are made of copper and the dielectric layers of electrical insulation IS1u, IS2u and IS1i_, IS2 _L are typically produced with the abovementioned materials based on epoxy resins. or polyimides.

The transistor chips Ths and T _L s are here of the vertical type and include source and drain electrodes (not marked) located respectively on the top and bottom faces of the chip. The source and drain electrodes are electrically connected to the bus bars. The gate electrode Gu, Gl, of the transistor chip Ths, Tls, is located on the upper face of the chip. The gate electrodes Gu and Gl are connected to the conductive interconnection sheets CGu and CGl by conductive tracks Cu and Cl and in electrical continuity with contact terminals GPu and GPl, respectively. The dielectric layer of electrical insulation IS1 u, IS 1 _L , provides electrical insulation between the bus bar + DC, -DC, and the conductive interconnection sheet CGu, CGl, respectively. The electrical insulation dielectric layer IS2u, IS2 _L , provides electrical insulation between the conductive interconnection sheet CGu, CGl, and the central bus bar OUT, respectively.

The electrical connections of the Ths and Tls chips to the DC supply voltages are provided by the bus bars + DC and -DC. The gate electrodes Gu and Gl are controlled by the contact terminals GPu and GPl. The midpoint of the PM switching branch is available on the central bus bar OUT dedicated to alternating voltage.

The architecture of this state-of-the-art power switching module PM is not suitable for lateral type transistor chips. Furthermore, as visible in FIG. 1, the contact terminals GPu and GPl, for access to the gate electrodes of the chips, are located laterally on the structure, that is to say on the edge thereof. this. This location of the contact terminals GPu and GPl is often a drawback. Indeed, additional connection means must be provided to bring the electrical connections to the control circuit which is typically arranged on the top or bottom face of the structure.

In the concept of the invention, the modular power switching element is a standard component which is suitable for the integration of lateral type transistor chips. Advantageously, the modular power switching element is produced with the techniques for manufacturing printed circuit boards, known as "Printed Circuit Board" PCBs. These techniques are perfectly mastered and allow low cost manufacturing.

Thus, for the production of the modular power switching elements according to the invention, use may be made of a combination of different manufacturing techniques including lamination, photolithography, metal plating, wet etching and others. For the interconnection of power chips, it may be necessary to use transient liquid phase welding known as TLP welding, sintering of metal nanoparticles powder or diffusion welding. Laser cutting and drilling will also be used and, possibly, other means such as die-cutting for the cutting of insulation and copper films or sheets.

Referring to Figs.2 to 4, 5A to 5F and 6, it is now described in detail below in a particular embodiment of a modular power switching element according to the invention.

In Fig.2, there is shown a removable ES power switching assembly comprising two modular power switching elements 1a and 1b according to the invention. The modular power switching elements 1a and 1b are standard elements. In the ES assembly, the modular power switching elements 1a and 1b are intended to be superimposed and assembled according to the arrows F.

The modular elements 1a and 1b are shown in a pre-assembly state in Fig.2. Nine assembly conductive pins 2i, 2 to ₉ are shown and are intended to be housed in orifices of the modular power switching elements 1a and 1b. The conductive assembly pins 2i, 2 to ₉ have the function of ensuring the mechanical assembly and the electrical connections between the modular power switching elements 1a and 1b.

It will be noted that the modular power switching elements 1a and 1b will not necessarily be joined together and that a spacing may be kept between them by means of the conductive assembly pins 2i to 2 ₉ , so as to forming a CAL fluid circulation channel.

In this embodiment, the modular power switching element 1a, 1b, is a branch of a transistor bridge, also called "half-bridge", comprising two transistor chips CPh and CPl of lateral type .

An example of a simplified electrical diagram of the modular power switching element 1a, 1b is shown in Fig.3. The transistor chips CPh, CPl, include drain, source and gate electrodes D1, D2, S1, S2 and G1, G2. The drain electrodes D1 and source S2 are connected respectively to DC power supply buses B + and B-. The source S1 and drain D2 electrodes are interconnected and provide the switched output SW of the modular power switching element 1a, 1b. The switching of the transistor chips CPh, CPl, are controlled through the gate electrodes G1, G2.

The transistor chip CPh, CPl, is shown schematically in section and in top view in Fig.4. The top view shows the upper face of the transistor chip CPh, CPl, on which are arranged source electrodes S1, S2, drain D1, D2, and gate G1, G2. In accordance with the lateral structure of the transistor chip CPh, CPl, the source electrodes S1, S2, and the drain electrodes D1, D2, extend laterally and parallel on the surface plane, on either side of the electrode grid G1, G2, centrally arranged. The source electrodes S1, S2, and the drain electrodes D1, D2, form the power electrodes of the transistor chip CPh, CPl, and the gate electrode G1, G2, form the switching control electrode thereof. this.

The ES assembly of FIG. 2, as will appear more clearly hereinafter in the description, is an arrangement of two half-bridges connected in parallel, typically for passing more current. Thus, the drain electrodes D1, D2, of source S1, S2, and of gate G1, G2, are electrically connected in pairs. The ES assembly is a simple association of two modular power switching elements according to the invention described here by way of illustrative example. Of course, in accordance with the invention, associations of more complex and diverse modules are possible, in particular with the help of assembly and interconnection elements, as will be described below with reference to FIGS. 7 to 9.

The modular power switching element 1a is now described above in detail, knowing that the two elements 1a and 1b are identical and that the description of element 1a also applies to element 1b.

As shown in Fig.2, the modular power switching element 1a is formed of two laminated blocks, BH _A and BL _A , which respectively integrate the transistor chips CPh and CPl. It will be noted that other embodiments of the modular power switching element according to the invention may include a number of transistor chips greater than two.

The laminated blocks, BH _A and BL _A , have similar architectures and are assembled in an antisymmetrical configuration relative to a junction plane materialized by a junction layer JC.

In the laminated block BH _A , the transistor chip CPh is buried in the structure, in sandwich, between an external composite plate PEH _A and an internal composite plate PIH _a . An intermediate dielectric layer CDH _A separates the external PEH _a and internal PIH _A composite plates. Three thin composite plates PH1 _A , PH2 _A , and PH3 _A are also laminated between the internal composite plate PIH _A and the junction layer JC with the laminated block BL _A. In Fig. 2, the transistor chip CPh has its top side facing down, the top side comprising the drain electrodes D1, source S1 and gate G1 shown in Fig. 4.

In the laminated block BL _A , the transistor chip CPl is buried in the structure, in sandwich, between an external composite plate PEL _A and an internal composite plate PIL _a . An intermediate dielectric layer CDL _A separates the external PEL _a and internal PIL _A composite plates. Three thin composite plates PL1 _A , PL2 _A , and PL3 _A are also laminated between the internal composite plate PIL _A and the junction layer JC with the laminated block BH _A. In Fig. 2, the transistor chip CP1 has its top side facing upwards, the top side comprising the drain electrodes D2, source S2 and gate G2 shown in Fig. 4.

The configurations of the external composite plate PEH _A , the intermediate dielectric layer CDH _A , the internal composite plate PIH _A and the three thin composite plates PH1 _A , PH2 _A , and PH3 _A are similar to those of the external composite plate PEL _A , the intermediate dielectric layer CDL _A , the internal composite plate PIL _A , and the three thin composite plates PL1 _A , PL2 _A , and PL3 _A , and are shown in Figs. 5A to 5F, respectively.

Pluralities of metallized orifices OG1, OG3, OG5, and metallized orifices OG2, OG4 and OG20, OG40, are drilled, typically by laser, in the external composite plate PEH _a , PEL _a , the intermediate dielectric layer CDH _A , CDL _A , the internal composite plate PIH _a , PIL _a , and the three thin composite plates PH1 _A , PL1 _A , PH2 _A , PL2 _A , and PH3 _A , PL3 _A. In general, all of the orifices are produced along axes perpendicular to the top and bottom surface planes of the external composite plate, the intermediate dielectric layer, the internal composite plate and the three thin composite plates.

The holes OG1 to OG5 are also visible in Fig.2 which shows a sectional view along the axis AA of Figs.5A to 5F. An internal conductive layer C1, typically made of copper, metallized the internal wall of the orifices and ensures the electrical conduction of these. The internal conductive layer C1 is visible in FIG. 2 for the orifices OG1 to OG5 and in the sectional view of FIG. 6 for the orifices OG2, OG4, and OG20, OG40. All of the metallized orifices OG1 to OG5 and OG20, OG40, are provided so as to allow the insertion of conductive assembly pins such as pins 2i to 2 ₉ .

As shown in Figs.5A and 2, the external composite plate PEH _A , PEL _A , includes external buses BEH +, BEL +, and BEH-, BEL-, typically made of copper. The external buses BEH +, BEL +, and BEH-, BEL- are included in a dielectric frame CA1. The external buses BEH +, BEL +, and BEH-, BEL-, are intended to be connected to the DC power supply buses B + and B- (and. Fig.3), respectively.

The intermediate dielectric layer CDH _A , CDL _A , is visible in Fig.5B. It includes a cutout forming an LC housing for the transistor chip CPh, CPl.

As shown in Figs.5C and 2, the internal composite plate PIH _A , PIL _A , includes lateral internal buses BIH +, BIL + and BIH-, BIL-, and a central internal bus BCH, BCL, typically made of copper. The buses are included in a CA2 dielectric frame. The implantation of the transistor chip CPh is visible in Fig.5C. In the internal composite plate PIH _A , the drain electrodes D1 and of source S1 of the transistor chip CPh are connected respectively to the lateral internal bus BIH + and to the central internal bus BCH. In the internal composite plate PIL _A , the drain electrodes D2 and source S2 of the transistor chip CPl are connected respectively to the central internal bus BCL and to the lateral internal bus BIL-.

As shown in Fig.5D, the thin composite plate PH1 _A , PL1 _A , includes lateral internal buses BH1 +, BL1 +, and BH1-, BL1-, and a central internal bus BCH1, BCL1, contained in a frame dielectric CA3 and corresponding respectively to the lateral internal buses BIH +, BIL + and BIH-, BIL-, and to the central internal bus BCH, BCL, of the internal composite plate PIH _A , PIL _A. The thin composite plate PH2 _A , PL2 _A , shown in Fig. 5E, comprises lateral internal buses BH2 +, BL2 +, and BH2-, BL2-, and a central internal bus BCH2, BCL2, contained in a dielectric frame CA4 and corresponding respectively to the lateral internal buses BIH +, BIL + and BIH-, BIL-, and to the central internal bus BCH, BCL, of the internal composite plate PIH _A , PIL _A. The thin composite plate PH3 _A , PL3 _A , shown in Fig. 5F, includes lateral internal buses BH3 +, BL3 +, and BH3-, BL3-, and a central internal bus BCH3, BCL3, contained in a dielectric frame CA5 and corresponding respectively to the lateral internal buses BIH +, BIL + and BIH-, BIL-, and to the central internal bus BCH, BCL, of the internal composite plate PIH _A , PILa.

The plurality of orifices OG1 are aligned on a lateral part of the external bus BEH +, BEL +, of the intermediate dielectric layer CDHa, CDLa, of the lateral internal bus BIH +, BIL +, and of the lateral internal buses BH1 +, BL1 +, BH2 +, BL2 +, and BH3 +, BL3 +, and form vias of electrical interconnection between these buses in the laminated blocks BH _A and BL _A. The plurality of orifices OG5 are aligned on a lateral part of the external bus BEH-, BEL-, of the intermediate dielectric layer CDH _A , CDL _A , of the lateral internal bus BIH-, BIL-, and of the lateral internal buses BH1-, BL1-, BH2-, BL2-, and BH3-, BL3-, and form electrical interconnection vias between these buses in the laminated blocks BH _A and BL _A.

The plurality of OG3 orifices are aligned in central portions of the external composite plate PEH _A , PEL _A , of the intermediate dielectric layer CDHa, CDLa, of the internal composite plate PIH _A , PIL _A , and of the three plates thin composites PH1 _A , PL1 _A , PH2 _a , PL2 _a , and PH3a, PL3a. The plurality of orifices OG3 form vias of electrical interconnection between the central internal buses BCH, BCL, BCH1, BCL1, BCH2, BCL2, and BCH3, BCL3, in the laminated blocks BH _A and BL _A. These central internal buses correspond to the switched output SW (Fig. 3) of the modular 1 _A power switching element. The orifices OG3 thus make it possible to have several connection points to this switched output SW on the upper and lower faces of the modular power switching element 1a, here in particular through the conductive assembly pins 2 ₂ and 2 ₅ , visible in Fig. 2.

The orifices OG2 and OG4 are drilled in dielectric portions of the dielectric frames CA1 to CA5 and the intermediate dielectric layers CDHa, CDLa. The orifices OG2 and OG4 are drilled at the locations of the transistor chips CPh and CPl. As shown in FIG. 4, the orifices OG2 and OG4 are arranged to come into correspondence with the gate electrodes G1 and G2 of the transistor chips CPh and CPl, respectively, so as to allow the electrical connection of the gate electrodes G1, G2, with the inner conductive layer C1 of the orifices OG2, OG4.

The orifices OG20 and OG40 are drilled in one edge of the dielectric frames CA1 to CA5 and the intermediate dielectric layers CDHa, CDLa and are electrically connected to the orifices OG2 and OG4, respectively. The electrical connection of ports OG2, OG4, and OG20, OG40 is shown in Figs.5F and 6, and is ensured by copper tracks P2, P4 in the thin composite plates PH3a and PL3a. The copper tracks P2 and P4 are connected to the interior conductive layers C1 of the orifices OG2, OG20, and OG4, OG40, respectively, so as to allow connections to the gate electrodes G1 and G2 on the upper and lower faces of the element. modular switching power 1a.

In this particular embodiment, it will be noted that the orifices OG1, OG3, and OG5 are through metallized orifices ensuring the electrical connections of the buses between the top and bottom faces of the modular power switching element 1a. The orifices OG2 and OG4 cannot be through, given the presence of the transistor chips CPh and CPl. The means formed by the copper tracks P2 and P4 and the orifices OG20 and OG40 make it possible to make the connections with the gate electrodes G1 and G2 available on the top and bottom faces of the modular power switching element 1a.

As shown in Fig.5A to 5F, the pluralities of orifices OG1.OG3 and OG5 are produced with the same fixed spacing pitch P between the orifices so as to allow them to coincide during the assembly of modular elements, here the assembly of modular elements 1a and 1b.

As shown in Figs.7 and 8, standard assembly and interconnection elements B1 are provided in the invention and can be used to produce removable AS power switching assemblies comprising a large number of elements modular 4 _A , 4 _B , 4 _C , .... In accordance with the invention, the modular elements 4 _A , 4 _B , 4 _C , ..., can be arranged in three dimensions to form AS assemblies. Several assembly and interconnection elements BI _A , BI _b , ..., can be used to create these AS assemblies.

As best seen in Fig.7, the assembly and interconnection elements Bl are typically in the form of conductive bars or plates provided with conductive assembly pins. In the embodiment of Fig. 7, the conductive bar 3 is typically made of copper and has a plurality of high pins, 2 _W h at 2i4H, and low, 2 _W l to 2i ₄ l- The conductive pins of assembly are mounted, with tightening, in holes OE of the busbar 3. The holes OE have between them a spacing which is equal to the pitch P. The pins are here mounted in pairs in the holes OE, a high pin and a pin bass being inserted into the same OE port. It will be noted that a longer pin can be used in other embodiments to replace the pair of upper and lower pins in the same OE orifice.

Other BI _F assembly and interconnection elements, such as that shown in FIG. 9, can be used in the AS assemblies of the invention to produce CAN channels typically intended for the circulation of a fluid. heat or flame retardant, or heat pipes.

In the embodiment of Fig.9, three conductive bars 5 are stacked 5 and assembled mechanically by OF pins. A spacing is kept between the bars 5 so as to obtain the CAN channels.

The invention is not limited to the particular embodiments which have been described here by way of example. Those skilled in the art, depending on the applications, may make different modifications and variants coming within the scope of protection of the invention.

Claims (10)

1) Modular power switching element (1a, 1b) comprising first and second laminated blocks (BH _A , BL _A ) assembled in an antisymmetrical configuration relative to a junction plane (JC), each of said first and second laminated blocks ( BH _A , BL _A ) comprising a power switching electronic chip (CPh, CPl) implanted in a stratification between an external composite plate (PEH _A , PEL _A ) and an internal composite plate (PIH _A , PIL _a ) separated by a intermediate dielectric layer (CDH _A , CDL _A ), said external (PEH _A , PEL _A ) and internal (PIH _A , PIL _A ) composite plates each having electric conduction buses (BEH +, BEL +, BEH-, BEL-; BIH + , BIL +, BIH-, BIL-, BCH, BCL), each so-called power switching electronic chip (CPh, CPl) having a face comprising first and second power electrodes (D1, D2, S1, S2) and an electrode switching control (G1, G2), said first and second power electrodes (D1, D2, S1, S2) being electrically connected to first (BIH +, BCL) and second (BCH, BIL-) respective internal electrical conduction buses of said internal composite plate (PIH _A , PIL _A ), in which a plurality of orifices (OG1 to OG5, OG20, OG40) each comprising an electrically conductive internal layer (Cl) extend into said first and second laminated blocks (BH _A , BL _A ) from external faces of their said external composite plates (PEH _A , PEL _A ), said plurality of orifices (OG1 to OG5, OG20, OG40) comprising at least first and second orifices (OG2, OG4) each communicating with a said respective switching control electrode (G1, G2) of said power switching electronic chips (CPh, CPl) and at least first, second and third pluralities of orifices (OG1, OG3, OG5) completely passing through said first and second laminated blocks (BH _a , BL _a ), electrically interconnecting said electric conduction buses (BEH +, BEL +, BEH-, BEL-; BIH +, BIL +, BIH-, BIL-, BCH, BCL) of said first and second laminated blocks (BH _a , BL _a ) and having a fixed spacing pitch (P) between the orifices (OG1, OG3, OG5). 2) Modular power switching element according to claim 1, characterized in that said power switching electronic chips (CPh, CPl) are lateral type transistor chips. 3) modular power switching element according to claim 1 or 2, characterized in that said first plurality of orifices (OG1) electrically interconnect said first internal electrical conduction bus (BIH +) of said internal composite plate (PIH _A ) of said first laminated block (BH _A ) to first external electric conduction buses (BEH +, BEL +) of the external composite plates (PEHa, PEL _a ) of said first and second laminated blocks (BH _a , BL _a ). 4) modular power switching element according to any one of claims 1 to 3, characterized in that said second plurality of orifices (OG5) electrically interconnect said second internal electrical conduction bus (BIL-) of said internal composite plate (PIL _a ) of said second laminated block (BL _a ) to second external electrical conduction buses (BEL-, BEH-) of the external composite plates (PEL _a , PEH _a ) of said first and second laminated blocks (BL _a , BHa) . 5) Modular power switching element according to any one of claims 1 to 4, characterized in that said third plurality of orifices (OG3) electrically interconnect said second internal electrical conduction bus (BCH) and said first internal bus electrical conduction (BCL) of said internal composite plates (PIH _a , PIL _a ) of said first and second laminated blocks (BH _a , BLa). 6) Modular power switching element according to any one of claims 1 to 5, characterized in that said plurality of orifices (OG1 to OG5, OG20, OG40) also comprises third and fourth orifices (OG20, OG40) which extend into said first and second laminated blocks (BH _a , BL _a ) from the outer faces of their said external composite plates (PEH _a , PELa), said third and fourth orifices (OG20, OG40) being connected respectively by electric tracks conductive (P2, P4) to said first and second orifices (OG2, OG4) communicating with said switching control electrodes (G1, G2) of said power switching electronic chips (CPh, CPl). 7) demountable power switching assembly comprising at least two modular power switching elements (1 _A , 1b) according to any one of claims 1 to 6, and a plurality of electrically conductive assembly pins (2i to 2 ₉ ), in which said electrically conductive assembly pins (2i to 2 ₉ ) are inserted into said orifices (OG1 to OG5, OG20, OG40) of said modular power switching elements (1 _A , 1b) and provide functions of mechanical assembly and electrical connection between said modular power switching elements (1a, 1b). 8) demountable power switching assembly according to claim 7, characterized in that it comprises a fluid circulation channel (CAL) formed by a spacing between said modular power switching elements (1a, 1b), said spacing being obtained by means of said electrically conductive assembly pins (2i to 2 ₉ ). 9) removable power switching assembly according to claim 7 or 8, characterized in that it also comprises at least one assembly and interconnection element (Bl, BIf) interposed between said modular power switching elements (4 _A , 4 _B ), said assembly and interconnection element (Bl, BIf) comprising at least one electrically conductive bar (3, 5) in which are arranged a plurality of through orifices (OE), said through orifices ( OE) being distributed with said fixed spacing pitch (P) and receiving said conductive assembly pins (2 _W h to 2i ₄ h; 2 _W l to 2i ₄ l, OF). 10) demountable power switching assembly according to claim 9, characterized in that said assembly and interconnection element (BIf) comprises at least two electrically conductive bars (5), said electrically conductive bars (5) being arranged with a spacing determined between them so as to form a fluid circulation channel (CAN).