EP3360160A1 - Electronic power module - Google Patents

Electronic power module

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Publication number
EP3360160A1
EP3360160A1 EP16790655.1A EP16790655A EP3360160A1 EP 3360160 A1 EP3360160 A1 EP 3360160A1 EP 16790655 A EP16790655 A EP 16790655A EP 3360160 A1 EP3360160 A1 EP 3360160A1
Authority
EP
European Patent Office
Prior art keywords
electronic
power
power module
substrate
chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16790655.1A
Other languages
German (de)
French (fr)
Inventor
Friedbald KIEL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valeo Equipements Electriques Moteur SAS
Original Assignee
Valeo Equipements Electriques Moteur SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo Equipements Electriques Moteur SAS filed Critical Valeo Equipements Electriques Moteur SAS
Publication of EP3360160A1 publication Critical patent/EP3360160A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Definitions

  • the present invention relates to an electronic power module, particularly for applications in fields such as automobiles, trucks, trains, photovoltaic systems, or battery management.
  • one or more electronic power modules control the currents and voltages applied.
  • a general desire to reduce carbon monoxide emissions supports the electrification of cars, buses and trucks.
  • the electrification of mobility requires the construction of electric motors / generators and compact conversion systems. These machines and conversion systems most often include one or more remote or integrated electronic modules.
  • Such a system most often comprises a control module and one or more electronic circuits consisting of active electronic components of the MOSFET or IGBT type arranged in a bridge.
  • the power electronic components in the form of bare chips, are brazed on leadframes, which are overmolded in a mechatronic box. Or alternatively on ceramic substrates carrying copper tracks of the DBC type.
  • These connection grids are maintained plated on a metal soleplate by means of an electrically insulating wafer which is sandwiched between the connection grids and the assembly substrate and the soleplate.
  • the wafer has properties of good thermal conduction so as to transmit the calories generated by the chips to a heat sink placed under the metal sole of the circuit.
  • FR2947679 is formed of an overmolded mechatronic housing:
  • busbar intermediate connection traces and power traces, called "busbar" in English terminology, which are electrically connected to the electronic chips by soldered connection son.
  • the present invention therefore aims at a design of an electronic power module overcoming these disadvantages.
  • these electronic chips are mounted directly on the power traces formed at least in part of hollow metal profile segments having at least partially a flat outer surface.
  • a first set of these power traces is electrically isolated from a second set of these power traces by at least a first substrate formed of a laminate comprising a first electrically insulating material and a second electrically conductive material.
  • a cooling liquid circulates in these profiles.
  • these profiles have according to the invention a rectangular cross section.
  • the first material is an organic insulator and the second material is copper.
  • the first substrate supports electronic control components of the electronic chips.
  • the first set of power traces, the first substrate and the second set of power traces form a stack contained substantially in a parallelepiped volume.
  • This stack further comprises, according to the invention, a second substrate below the first set of power traces and a third substrate above the second set of power traces forming at least one cavity containing an electrically insulating and thermally conductive liquid.
  • the electronic chips are MOSFET or IGBT type power transistors inclusive of diodes forming branches of a bridge of an inverter intended to be connected as input to a power supply network of a power supply.
  • motor vehicle and output to at least one winding of a rotating electrical machine of said vehicle.
  • Figures 1a and 1b show schematically, respectively in side view and in top view, a power module according to the invention comprising a bridge of two-branch power transistors.
  • Figure 2 shows in perspective an example of a concrete embodiment of a power module according to the invention similar to that shown schematically in Figures 1a and 1b. DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION
  • FIG. 1a which diagrammatically shows in side view a power module 1 according to the invention, shows an electronic chip 2 connected by a connecting wire 3 to a first element 4 of a first set of power traces 4, 5 , 6 that shows in full the top view of Figure 1b, and mounted directly on a second element 6 of the first set of traces of power 4, 5, 6.
  • the electronic chip 2 in question corresponds to one of the transistors 2, 7, 8, 9 of a bridge of power transistors 2, 7, 8, 9 of MOSFET type with two branches:
  • the first set of power traces 4, 5, 6 corresponds to so-called "low side” transistors 2, 7 whose sources are connected by the second element 6 to a first power connection terminal 10 of the module 1 intended to be connected to a ground, and to the connections 4, 5 of the drains of these "low side” transistors 2, 7 to the output terminals 1 1, 12 of the module 1 by the first element 4 and a third element 5;
  • a second set of power traces 13, 14 corresponds to transistors 8, 9 called “high side", that is to say whose other drains are connected to a second power connection terminal 15 intended to be connected to a power supply of the module 1.
  • the electronic chips of the transistors 2, 7, 8, 9 are mounted directly on the first set of power traces 4, 5, 6.
  • the first and second sets of power tracks 4, 5, 6, 13, 14 are formed of segments of hollow rectangular section metal sections.
  • a refrigerant circulating in these sections 4, 5, 6, 13, 14 allows efficient evacuation of the heat produced by the electronic chips 2, 7, 8, 9.
  • the first and second sets of power traces 4, 5, 6, 13, 14 are separated by a first substrate 16.
  • This first substrate 16 is formed of a laminate of an organic insulator, such as epoxy, and copper layers making it possible to produce a printed circuit according to PCB production techniques known per se (electroplating, plastic paste). welding, combined or not with electrical interconnections made by sintering).
  • organic insulator such as epoxy
  • copper layers making it possible to produce a printed circuit according to PCB production techniques known per se (electroplating, plastic paste). welding, combined or not with electrical interconnections made by sintering).
  • a second substrate 17 arranged below the first set of power traces 4, 5, 6 and a third substrate 18 arranged above the second set of power tracks 13, 14 form with the first set of power traces 4, 5, 6, the first substrate 16, and the second set of power traces 13, 14 a stack contained in a substantially parallelepipedal volume.
  • Cavities formed in this stack around the electronic chips 2, 7, 8, 9 contain an electrically insulating liquid and thermally conductive, which contributes by convection cooling of these chips 2, 7, 8, 9.
  • the power module architecture 1 described above makes it possible to produce power modules that are more compact than those known from the state of the art by improving their cooling.
  • a bridge with two branches made in the form of the power module 1 shown in Figure 2 connected to the output 1 1, 12 to a phase winding 19 of a rotating electrical machine and, at the input 10, 15, to a network power power supply 20, is a brick to advantageously achieve high-power multiphase reversible DC-DC converters, feeding, for example, electric vehicle traction motors typically up to 60 kW or more.
  • the dimensions of the volume occupied by a brick 1 are substantially equal to 7 cm x 5 cm x 1 cm.
  • the shape and section of the sections 4, 5, 6, 13, 14 indicated are just one example. It is the same for the nature of the materials constituting the first substrate 16, or the type of power transistors 2, 7, 8, 9 used.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

The electronic power module (1) comprises power connection terminals (10, 11, 12, 15) intended to be connected to an input device (20) and to an output device (19), electronic chips (2, 7, 8, 9) and power tracks (4, 5, 6, 13, 14) electrically connected to the chips and to the terminals. According to the invention, the chips are mounted directly on the power tracks (4, 5, 6) formed at least partially from segments of hollow metal profile sections (4, 5, 6, 13, 14) that have, at least partially, a flat outer surface. According to another feature, a first set of tracks (4, 5, 6) is electrically insulated from a second set of tracks (13, 14) by at least a first substrate (16) formed from a laminate comprising a first electrically insulating material and a second electrically conductive material.

Description

MODULE ELECTRONIQUE DE PUISSANCE  ELECTRONIC POWER MODULE
DOMAINE TECHNIQUE DE L'INVENTION. TECHNICAL FIELD OF THE INVENTION
La présente invention concerne un module électronique de puissance notamment pour des applications dans des domaines tels que ceux des automobiles, des camions, des trains, des systèmes photovoltaïques, ou la gestions des batteries.  The present invention relates to an electronic power module, particularly for applications in fields such as automobiles, trucks, trains, photovoltaic systems, or battery management.
ARRIERE PLAN TECHNOLOGIQUE DE L'INVENTION. BACKGROUND ART OF THE INVENTION.
L'électronique de puissance a remplacé de nos jours les moyens électromécaniques d'autrefois pour l'alimentation électrique et le contrôle des machines électriques tournantes modernes mises en œuvre dans les applications précitées.  Power electronics has nowadays replaced the electromechanical means of the past for the power supply and the control of modern rotating electrical machines implemented in the aforementioned applications.
Que ce soit des machines électriques tournantes monophasées ou polyphasées, synchrones ou asynchrones, fonctionnant en moteur ou en générateur, un ou plusieurs modules électroniques de puissance contrôlent les courants et les tensions appliqués.  Whether single-phase or polyphase, synchronous or asynchronous electrical machines operating as motor or generator, one or more electronic power modules control the currents and voltages applied.
Une volonté générale de réduire l'émission d'oxyde de carbone soutient l'électrification de la voiture, des bus et des camions. L'électrification de la mobilité demande la construction de moteurs/générateurs électriques et de systèmes de conversion compacts. Ces machines et systèmes de conversion comportent le plus souvent un ou des modules électroniques déportés ou intégrés.  A general desire to reduce carbon monoxide emissions supports the electrification of cars, buses and trucks. The electrification of mobility requires the construction of electric motors / generators and compact conversion systems. These machines and conversion systems most often include one or more remote or integrated electronic modules.
Un tel système comprend le plus souvent un module de commande et un ou plusieurs circuits d'électroniques constitués des composants électronique actifs du type MOSFET ou IGBT arrangés en pont.  Such a system most often comprises a control module and one or more electronic circuits consisting of active electronic components of the MOSFET or IGBT type arranged in a bridge.
Selon une architecture connue, les composants électroniques de puissance, sous forme de puces nues, sont brasés sur des grilles de connexion, dites «leadframes» en anglais, qui sont surmoulées dans un boîtier mécatronique. Ou alternativement sur des substrats céramiques portant des pistes de cuivre du type DBC. Ces grilles de connexion sont maintenues plaquées sur une semelle métallique par l'intermédiaire d'une plaquette électriquement isolante qui est disposée en sandwich entre les grilles de connexion et le substrat d'assemblage et la semelle. La plaquette possède des propriétés de bonne conduction thermique de manière à transmettre les calories générées par les puces électroniques vers un dissipateur thermique placé sous la semelle métallique du circuit. Dans un contexte de réduction des émissions de CO2 et du développement des systèmes d'électroniques à haut rendement, une technologie autorisant un niveau d'intégration supérieur et une réduction des coûts a été développée par la société VALEO EQUIPEMENTS ELECTRIQUES MOTEUR. According to a known architecture, the power electronic components, in the form of bare chips, are brazed on leadframes, which are overmolded in a mechatronic box. Or alternatively on ceramic substrates carrying copper tracks of the DBC type. These connection grids are maintained plated on a metal soleplate by means of an electrically insulating wafer which is sandwiched between the connection grids and the assembly substrate and the soleplate. The wafer has properties of good thermal conduction so as to transmit the calories generated by the chips to a heat sink placed under the metal sole of the circuit. In a context of reduction of CO2 emissions and the development of high-efficiency electronic systems, a technology allowing a higher level of integration and a reduction of costs has been developed by the company VALEO ELECTRICAL EQUIPMENT MOTOR.
Le module électronique de puissance décrit dans la demande de brevet The electronic power module described in the patent application
FR2947679 est formé d'un boîtier mécatronique surmoulé: FR2947679 is formed of an overmolded mechatronic housing:
- ayant des bornes de raccordement de puissance;  - having power connection terminals;
- intégrant des puces électroniques montées sur des substrats électroniques de puissance de type IMS, DBC ou PCB ayant une même architecture et formant les branches du pont;  integrating electronic chips mounted on electronic power substrates of IMS, DBC or PCB type having the same architecture and forming the branches of the bridge;
- comportant des traces de raccordement intermédiaires et des traces de puissance, dites "busbar" en terminologie anglaise, auxquelles sont reliées électriquement les puces électroniques par des fils de raccordement soudés.  - Including intermediate connection traces and power traces, called "busbar" in English terminology, which are electrically connected to the electronic chips by soldered connection son.
Toutefois, dans cette technologie, la dissipation de la chaleur dans les puces n'est pas totalement satisfaisante et les pertes par effet Joule demeurent trop importantes et risquent d'amener à un mal fonctionnement ou une réduction du temps de vie des puces .  However, in this technology, the heat dissipation in the chips is not completely satisfactory and Joule losses remain too high and may lead to malfunction or a reduction in the life of the chips.
DESCRIPTION GENERALE DE L'INVENTION. GENERAL DESCRIPTION OF THE INVENTION
La présente invention vise donc une conception d'un module électronique de puissance palliant ces inconvénients.  The present invention therefore aims at a design of an electronic power module overcoming these disadvantages.
Elle a précisément pour objet un module électronique de puissance du type de ceux comprenant:  Its subject is precisely an electronic power module of the type comprising:
- des bornes de raccordement de puissance destinées à être connectées à un dispositif d'entrée et à un dispositif de sortie;  power connection terminals intended to be connected to an input device and an output device;
- des puces électroniques;  - electronic chips;
- des traces de puissance reliées électriquement aux puces électroniques et/ ou aux bornes de raccordement de puissance.  power traces electrically connected to the electronic chips and / or to the power connection terminals.
Selon l'invention, ces puces électroniques sont montées directement sur les traces de puissance formées au moins en partie de segments de profilés métalliques creux présentant au moins partiellement une surface extérieure plane.  According to the invention, these electronic chips are mounted directly on the power traces formed at least in part of hollow metal profile segments having at least partially a flat outer surface.
Selon l'invention encore, un premier ensemble de ces traces de puissance est isolé électriquement d'un second ensemble de ces traces de puissance par au moins un premier substrat formé d'un stratifié comprenant un premier matériau électriquement isolant et un second matériau électriquement conducteur. Selon l'invention, un liquide de refroidissement circule dans ces profilés. According to the invention, a first set of these power traces is electrically isolated from a second set of these power traces by at least a first substrate formed of a laminate comprising a first electrically insulating material and a second electrically conductive material. . According to the invention, a cooling liquid circulates in these profiles.
De préférence, ces profilés présentent selon l'invention une section droite rectangulaire.  Preferably, these profiles have according to the invention a rectangular cross section.
Selon l'invention, le premier matériau est un isolant organique et le second matériau est du cuivre.  According to the invention, the first material is an organic insulator and the second material is copper.
Selon l'invention encore, le premier substrat supporte des composants électroniques de commande des puces électroniques.  According to the invention, the first substrate supports electronic control components of the electronic chips.
Dans le module électronique de puissance selon l'invention, le premier ensemble de traces de puissance, le premier substrat et le second ensemble de traces de puissance forment un empilement contenu sensiblement dans un volume parallélépipédique.  In the power electronic module according to the invention, the first set of power traces, the first substrate and the second set of power traces form a stack contained substantially in a parallelepiped volume.
Cet empilement comprend en outre, selon l'invention, un deuxième substrat en dessous du premier ensemble de traces de puissance et un troisième substrat au dessus du second ensemble de traces de puissance formant au moins une cavité contenant un liquide isolant électriquement et thermiquement conducteur.  This stack further comprises, according to the invention, a second substrate below the first set of power traces and a third substrate above the second set of power traces forming at least one cavity containing an electrically insulating and thermally conductive liquid.
Selon l'invention, les puces électroniques sont des transistors de puissance de type MOSFET ou IGBT inclusivement des diodes formant des branches d'un pont d'un onduleur destiné à être relié en entrée à un réseau d'alimentation électrique de puissance d'un véhicule automobile et en sortie à au moins un enroulement de d'une machine électrique tournante dudit véhicule.  According to the invention, the electronic chips are MOSFET or IGBT type power transistors inclusive of diodes forming branches of a bridge of an inverter intended to be connected as input to a power supply network of a power supply. motor vehicle and output to at least one winding of a rotating electrical machine of said vehicle.
Ces quelques spécifications essentielles auront rendu évidents pour l'homme de métier les avantages apportés par ce module électronique de puissance par rapport à l'état de la technique antérieur.  These few essential specifications will have made obvious to the skilled person the advantages provided by this electronic power module compared to the state of the prior art.
Les spécifications détaillées de l'invention sont données dans la description qui suit en liaison avec les dessins ci-annexés. Il est à noter que ces dessins n'ont d'autre but que d'illustrer le texte de la description et ne constituent en aucune sorte une limitation de la portée de l'invention.  The detailed specifications of the invention are given in the following description in conjunction with the accompanying drawings. It should be noted that these drawings have no other purpose than to illustrate the text of the description and do not constitute in any way a limitation of the scope of the invention.
BREVE DESCRIPTION DES DESSINS. BRIEF DESCRIPTION OF THE DRAWINGS
Les Figures 1a et 1 b montrent schématiquement, respectivement en vue de côté et en vue de dessus, un module de puissance selon l'invention comprenant un pont de transistors de puissance à deux branches.  Figures 1a and 1b show schematically, respectively in side view and in top view, a power module according to the invention comprising a bridge of two-branch power transistors.
La Figure 2 montre en perspective un exemple de réalisation concrète d'un module de puissance selon l'invention similaire à celui montré schématiquement sur les Figures 1a et 1 b. DESCRIPTION DES MODES DE REALISATION PREFERES DE L'INVENTION.Figure 2 shows in perspective an example of a concrete embodiment of a power module according to the invention similar to that shown schematically in Figures 1a and 1b. DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION
La Figure 1a, qui représente schématiquement en vue de côté un module de puissance 1 selon l'invention, montre une puce électronique 2 reliée par un fil de raccordement 3 à un premier élément 4 d'un premier ensemble de traces de puissance 4, 5, 6 que montre en totalité la vue de dessus de la Figure 1 b, et montée directement sur un second élément 6 de ce premier ensemble de traces de puissance 4, 5, 6. FIG. 1a, which diagrammatically shows in side view a power module 1 according to the invention, shows an electronic chip 2 connected by a connecting wire 3 to a first element 4 of a first set of power traces 4, 5 , 6 that shows in full the top view of Figure 1b, and mounted directly on a second element 6 of the first set of traces of power 4, 5, 6.
Dans cet exemple, la puce électronique 2 dont il s'agit correspond à l'un des transistors 2, 7, 8, 9 d'un pont de transistors de puissance 2, 7, 8, 9 de type MOSFET à deux branches:  In this example, the electronic chip 2 in question corresponds to one of the transistors 2, 7, 8, 9 of a bridge of power transistors 2, 7, 8, 9 of MOSFET type with two branches:
- le premier ensemble de traces de puissance 4, 5, 6 correspond aux transistors 2, 7 dits "low side", c'est-à-dire dont les sources sont reliée par le second élément 6 à une première borne de raccordement de puissance 10 du module 1 destinée à être connectée à une masse, et aux connections 4, 5 des drains de ces transistors "low side" 2, 7 aux bornes de sortie 1 1 , 12 du module 1 par le premier élément 4 et un troisième élément 5;  the first set of power traces 4, 5, 6 corresponds to so-called "low side" transistors 2, 7 whose sources are connected by the second element 6 to a first power connection terminal 10 of the module 1 intended to be connected to a ground, and to the connections 4, 5 of the drains of these "low side" transistors 2, 7 to the output terminals 1 1, 12 of the module 1 by the first element 4 and a third element 5;
- un deuxième ensemble de traces de puissance 13, 14 correspond aux transistors 8, 9 dits "high side", c'est-à-dire dont les autres drains sont reliés à une seconde borne de raccordement de puissance 15 destinée à être reliée à une alimentation électrique du module 1 .  a second set of power traces 13, 14 corresponds to transistors 8, 9 called "high side", that is to say whose other drains are connected to a second power connection terminal 15 intended to be connected to a power supply of the module 1.
Les puces électroniques des transistors 2, 7, 8, 9 sont montées directement sur le premier ensemble de traces de puissance 4, 5, 6.  The electronic chips of the transistors 2, 7, 8, 9 are mounted directly on the first set of power traces 4, 5, 6.
Comme le montre bien la vue en perspective de la Figure 2, les premier et second ensembles de traces de puissance 4, 5, 6, 13, 14 sont formés de segments de profilés métalliques creux de section droite rectangulaire.  As is clearly seen in the perspective view of FIG. 2, the first and second sets of power tracks 4, 5, 6, 13, 14 are formed of segments of hollow rectangular section metal sections.
Un fluide réfrigérant circulant dans ces profilés 4, 5, 6, 13, 14 permet une évacuation efficace de la chaleur produite par les puces électroniques 2, 7, 8, 9.  A refrigerant circulating in these sections 4, 5, 6, 13, 14 allows efficient evacuation of the heat produced by the electronic chips 2, 7, 8, 9.
Comme le montre bien également la Figure 1a, les premier et second ensembles de traces de puissance 4, 5, 6, 13, 14 sont séparés par un premier substrat 16.  As also well shown in FIG. 1a, the first and second sets of power traces 4, 5, 6, 13, 14 are separated by a first substrate 16.
Ce premier substrat 16 est formé d'un stratifié d'un isolant organique, tel que de l'époxy, et de couches de cuivre permettant de réaliser un circuit imprimé selon des techniques de fabrication de PCB connues en soi (électrodéposition, pâte à souder, combinées ou non avec des interconnections électriques réalisées par frittage). This first substrate 16 is formed of a laminate of an organic insulator, such as epoxy, and copper layers making it possible to produce a printed circuit according to PCB production techniques known per se (electroplating, plastic paste). welding, combined or not with electrical interconnections made by sintering).
Il permet d'isoler électriquement le premier ensemble de traces de puissance It allows to electrically isolate the first set of power traces
4, 5, 6 du second ensemble de traces de puissance 13, 14 et de supporter des composants électroniques de commande des transistors 2, 7, 8, 9. 4, 5, 6 of the second set of power traces 13, 14 and supporting electronic control components of the transistors 2, 7, 8, 9.
Un deuxième substrat 17 agencé en dessous du premier ensemble de traces de puissance 4, 5, 6 et un troisième substrat 18 agencé au dessus du second ensemble de traces de puissance 13, 14 forment avec le premier ensemble de traces de puissance 4, 5, 6, le premier substrat 16, et le second ensemble de traces de puissance 13, 14 un empilement contenu dans un volume sensiblement parallélépipédique.  A second substrate 17 arranged below the first set of power traces 4, 5, 6 and a third substrate 18 arranged above the second set of power tracks 13, 14 form with the first set of power traces 4, 5, 6, the first substrate 16, and the second set of power traces 13, 14 a stack contained in a substantially parallelepipedal volume.
Des cavités formées dans cet empilement autour des puces électroniques 2, 7, 8, 9 contiennent un liquide isolant électriquement et thermiquement conducteur, qui contribue par convection au refroidissement de ces puces 2, 7, 8, 9.  Cavities formed in this stack around the electronic chips 2, 7, 8, 9 contain an electrically insulating liquid and thermally conductive, which contributes by convection cooling of these chips 2, 7, 8, 9.
L'architecture de module de puissance 1 décrite ci-dessus permet de réaliser des modules de puissance plus compacts que ceux connus de l'état de la technique grâce à une amélioration de leur refroidissement.  The power module architecture 1 described above makes it possible to produce power modules that are more compact than those known from the state of the art by improving their cooling.
Cette compacité permet de diminuer la longueur des traces de puissance 4, This compactness makes it possible to reduce the length of the power traces 4,
5, 6, 13, 14 et par conséquent de réduire leur résistance et leur inductance parasite, ce qui contribue à augmenter le rendement des modules de puissance 1 selon l'invention. 5, 6, 13, 14 and consequently to reduce their resistance and their parasitic inductance, which contributes to increasing the efficiency of the power modules 1 according to the invention.
Un pont à deux branches, réalisé sous la forme du module de puissance 1 montré sur la Figure 2 relié en sortie 1 1 , 12 à un enroulement de phase 19 d'une machine électrique tournante et, en entrée 10, 15, à un réseau d'alimentation électrique de puissance 20, est une brique permettant de réaliser avantageusement des convertisseurs courant alternatif - courant continu réversibles multiphasés de forte puissance, alimentant, par exemple, des moteurs de traction de véhicules électriques allant typiquement jusqu'à 60 kW ou plus.  A bridge with two branches, made in the form of the power module 1 shown in Figure 2 connected to the output 1 1, 12 to a phase winding 19 of a rotating electrical machine and, at the input 10, 15, to a network power power supply 20, is a brick to advantageously achieve high-power multiphase reversible DC-DC converters, feeding, for example, electric vehicle traction motors typically up to 60 kW or more.
Typiquement les dimensions du volume occupé par une brique 1 sont sensiblement égales à 7 cm x 5 cm x 1 cm.  Typically the dimensions of the volume occupied by a brick 1 are substantially equal to 7 cm x 5 cm x 1 cm.
Comme il va de soi, l'invention ne se limite pas aux seuls modes d'exécution préférentiels décrits ci-dessus.  It goes without saying that the invention is not limited to the only preferred embodiments described above.
Notamment, la forme et la section des profilés 4, 5, 6, 13, 14 indiquées ne sont qu'un exemple. II en est de même de la nature des matériaux constituant le premier substrat 16, ou du type de transistors de puissance 2, 7, 8, 9 utilisés. In particular, the shape and section of the sections 4, 5, 6, 13, 14 indicated are just one example. It is the same for the nature of the materials constituting the first substrate 16, or the type of power transistors 2, 7, 8, 9 used.
Une description similaire pourrait également porter sur un module de puissance 1 selon l'invention avec un pont de transistors de puissance 2, 7, 8, 9 comportant un nombre de branches supérieur à deux.  A similar description could also relate to a power module 1 according to the invention with a bridge of power transistors 2, 7, 8, 9 having a number of branches greater than two.
L'invention embrasse donc toutes les variantes possibles de réalisation dans la mesure où ces variantes restent dans le cadre défini par les revendications ci- après.  The invention therefore embraces all possible variants of implementation insofar as these variants remain within the scope defined by the claims below.

Claims

REVENDICATIONS
1) Module électronique de puissance (1 ) du type de ceux comprenant: 1) electronic power module (1) of the type comprising:
- des bornes de raccordement de puissance (10, 1 1 , 12, 15) destinées à être connectées à un dispositif d'entrée (20) et à un dispositif de sortie (19);  power connection terminals (10, 11, 12, 15) for connection to an input device (20) and an output device (19);
- des puces électroniques (2, 7, 8, 9);  electronic chips (2, 7, 8, 9);
- des traces de puissance (4, 5, 6, 13, 14) reliées électriquement auxdites puces électroniques (2, 7, 8, 9) et/ ou auxdites bornes de raccordement de puissance (10, 1 1 , 12, 15);  power traces (4, 5, 6, 13, 14) electrically connected to said electronic chips (2, 7, 8, 9) and / or to said power connection terminals (10, 1 1, 12, 15);
caractérisé en ce que lesdites puces électroniques (2, 7, 8, 9) sont montées directement sur lesdites traces de puissance (4, 5, 6) formées au moins en partie de segments de profilés métalliques creux (4, 5, 6, 13, 14) présentant au moins partiellement une surface extérieure plane. 2) Module électronique de puissance (1 ) selon la revendication 1 précédente, caractérisé en ce que un premier ensemble (4, 5, 6) desdites traces de puissance (4, 5, 6, 13, 14) est isolé électriquement d'un second ensemble (13, 14) desdites traces de puissance (4, 5, 6, 13, 14) par au moins un premier substrat (16) formé d'un stratifié comprenant un premier matériau électriquement isolant et un second matériau électriquement conducteur. characterized in that said electronic chips (2, 7, 8, 9) are mounted directly on said power traces (4, 5, 6) formed at least in part of hollow metal profile segments (4, 5, 6, 13). 14) at least partially having a planar outer surface. 2) electronic power module (1) according to claim 1, characterized in that a first set (4, 5, 6) of said power traces (4, 5, 6, 13, 14) is electrically isolated from a second set (13, 14) of said power traces (4, 5, 6, 13, 14) by at least a first substrate (16) formed of a laminate comprising a first electrically insulating material and a second electrically conductive material.
3) Module électronique de puissance (1 ) selon la revendication 2 précédente, caractérisé en qu'un liquide de refroidissement circule dans lesdits profilés (4, 5, 6, 13, 14). 3) electronic power module (1) according to preceding claim 2, characterized in that a coolant flows in said profiles (4, 5, 6, 13, 14).
4) Module électronique de puissance (1 ) selon l'une quelconque des revendications 2 à 3 précédentes, caractérisé en ce que lesdits profilés (4, 5, 6, 13, 14) présentent une section droite rectangulaire. 5) Module électronique de puissance (1 ) selon la revendication 2 précédente, caractérisé en ce que ledit premier matériau est un isolant organique et ledit second matériau est du cuivre. 6) Module électronique de puissance (1 ) selon l'une quelconque des revendications 2 à 5 précédentes, caractérisé en ce que ledit premier substrat (16) supporte des composants électroniques de commande desdites puces électroniques (2, 7, 8, 9). 7) Module électronique de puissance (1 ) selon l'une quelconque des revendications 2 à 6 précédentes, caractérisé en ce que ledit premier ensemble (4, 5, 6), ledit premier substrat (16) et ledit second ensemble (13, 14) forment un empilement contenu sensiblement dans un volume parallélépipédique. 8) Module électronique de puissance (1 ) selon la revendication 7 précédente, caractérisé en ce que ledit empilement comprend en outre un deuxième substrat (17) en dessous dudit premier ensemble (4, 5, 6) et un troisième substrat (18) au dessus dudit second ensemble (13, 14) formant au moins une cavité contenant un liquide isolant électriquement et thermiquement conducteur. 4) electronic power module (1) according to any one of claims 2 to 3 above, characterized in that said profiles (4, 5, 6, 13, 14) have a rectangular cross section. 5) electronic power module (1) according to claim 2, characterized in that said first material is an organic insulator and said second material is copper. 6) electronic power module (1) according to any one of claims 2 to 5, characterized in that said first substrate (16) supports electronic control components of said electronic chips (2, 7, 8, 9). 7) electronic power module (1) according to any one of claims 2 to 6 above, characterized in that said first set (4, 5, 6), said first substrate (16) and said second set (13, 14 ) form a stack substantially contained in a parallelepiped volume. 8) electronic power module (1) according to claim 7, characterized in that said stack further comprises a second substrate (17) below said first set (4, 5, 6) and a third substrate (18) to above said second set (13, 14) forming at least one cavity containing an electrically insulating and thermally conductive liquid.
9) Module électronique de puissance (1 ) selon la revendication 7 ou 8 précédente, caractérisé en ce que des dimensions dudit volume sont sensiblement égales à 7 cm x 5 cm x 1 cm. 10) Module électronique de puissance (1 ) selon l'une quelconque de revendications 1 à 9 précédentes, caractérisé en ce que lesdites puces électroniques (2, 7, 8, 9) sont des transistors de puissance (2, 7, 8, 9) de type MOSFET formant des branches d'un pont d'un convertisseur alternatif- continu réversible destiné à être relié en entrée (10, 15) à un réseau d'alimentation électrique de puissance (20) d'un véhicule automobile et en sortie (1 1 , 12) à au moins un enroulement (19) d'une machine électrique tournante dudit véhicule. 9) electronic power module (1) according to claim 7 or 8 preceding, characterized in that dimensions of said volume are substantially equal to 7 cm x 5 cm x 1 cm. 10) electronic power module (1) according to any one of claims 1 to 9 above, characterized in that said electronic chips (2, 7, 8, 9) are power transistors (2, 7, 8, 9 ) of the MOSFET type forming branches of a bridge of a reversible DC-DC converter intended to be connected at the input (10, 15) to a power supply network (20) of a motor vehicle and at the output (1 1, 12) to at least one winding (19) of a rotating electrical machine of said vehicle.
EP16790655.1A 2015-10-05 2016-10-04 Electronic power module Withdrawn EP3360160A1 (en)

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FR1559466A FR3042078B1 (en) 2015-10-05 2015-10-05 ELECTRONIC POWER MODULE
PCT/FR2016/052536 WO2017060602A1 (en) 2015-10-05 2016-10-04 Electronic power module

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FR2754669B1 (en) * 1996-10-16 2002-04-12 Alsthom Cge Alkatel ELECTRONIC POWER MODULE, AND ELECTRONIC POWER SYSTEM INCLUDING A PLURALITY OF SAID MODULE
US20070165376A1 (en) * 2006-01-17 2007-07-19 Norbert Bones Three phase inverter power stage and assembly
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