FR3078441B1 - Dispositif quantique comprenant des transistors fet et des qubits co-integres sur un meme substrat - Google Patents
Dispositif quantique comprenant des transistors fet et des qubits co-integres sur un meme substrat Download PDFInfo
- Publication number
- FR3078441B1 FR3078441B1 FR1851743A FR1851743A FR3078441B1 FR 3078441 B1 FR3078441 B1 FR 3078441B1 FR 1851743 A FR1851743 A FR 1851743A FR 1851743 A FR1851743 A FR 1851743A FR 3078441 B1 FR3078441 B1 FR 3078441B1
- Authority
- FR
- France
- Prior art keywords
- covering
- qubits
- integrated
- quantum device
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
- 125000006850 spacer group Chemical group 0.000 abstract 4
- 239000000969 carrier Substances 0.000 abstract 1
- 239000002096 quantum dot Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Computational Mathematics (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Artificial Intelligence (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Dispositif quantique (100) comprenant : - un composant quantique (112, 124) formant un qubit, formée dans une couche active d'un substrat et comprenant : - une région de confinement (114) ; - des réservoirs de porteurs de charges ; - une première grille avant (116) recouvrant la région de confinement ; - des premiers espaceurs latéraux (120) disposés autour de la première grille avant et recouvrant des régions d'accès (122) ; - un transistor FET (130) formé dans la couche active, comprenant des régions de canal (132), de source et de drain (138) formées dans la couche active, une deuxième grille avant (134) recouvrant la région de canal, et des deuxièmes espaceurs latéraux (136) disposés autour de la deuxième grille avant et recouvrant des régions d'extension de source et de drain (137) ; et dans lequel une largeur des premiers espaceurs latéraux est supérieure à celle des deuxièmes espaceurs latéraux.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1851743A FR3078441B1 (fr) | 2018-02-27 | 2018-02-27 | Dispositif quantique comprenant des transistors fet et des qubits co-integres sur un meme substrat |
US16/284,103 US10679139B2 (en) | 2018-02-27 | 2019-02-25 | Quantum device comprising FET transistors and qubits co-integrated on the same substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1851743A FR3078441B1 (fr) | 2018-02-27 | 2018-02-27 | Dispositif quantique comprenant des transistors fet et des qubits co-integres sur un meme substrat |
FR1851743 | 2018-02-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3078441A1 FR3078441A1 (fr) | 2019-08-30 |
FR3078441B1 true FR3078441B1 (fr) | 2020-03-20 |
Family
ID=62222939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1851743A Active FR3078441B1 (fr) | 2018-02-27 | 2018-02-27 | Dispositif quantique comprenant des transistors fet et des qubits co-integres sur un meme substrat |
Country Status (2)
Country | Link |
---|---|
US (1) | US10679139B2 (fr) |
FR (1) | FR3078441B1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10903413B2 (en) | 2018-06-20 | 2021-01-26 | Equal!.Labs Inc. | Semiconductor process optimized for quantum structures |
US10934163B2 (en) | 2018-06-20 | 2021-03-02 | equal1.labs Inc. | Classic-quantum injection interface device |
US20230177376A1 (en) * | 2020-03-16 | 2023-06-08 | Diraq Pty Ltd | A quantum processing element and system |
FR3116946B1 (fr) | 2020-11-27 | 2022-11-11 | Commissariat Energie Atomique | Procédé de réalisation d’un dispositif quantique |
FR3131086A1 (fr) * | 2021-12-16 | 2023-06-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Grille arriere pour dispositif quantique |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3033665B1 (fr) * | 2015-03-11 | 2018-10-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Transistor a electron unique et son procede de realisation |
EP3225587B1 (fr) * | 2016-03-31 | 2021-07-28 | Hitachi, Ltd. | Dispositif à points quantiques à base de silicium |
FR3072375B1 (fr) * | 2017-10-18 | 2021-04-16 | Commissariat Energie Atomique | Dispositif quantique a qubits de spin couples de maniere modulable |
-
2018
- 2018-02-27 FR FR1851743A patent/FR3078441B1/fr active Active
-
2019
- 2019-02-25 US US16/284,103 patent/US10679139B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10679139B2 (en) | 2020-06-09 |
US20190266509A1 (en) | 2019-08-29 |
FR3078441A1 (fr) | 2019-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR3078441B1 (fr) | Dispositif quantique comprenant des transistors fet et des qubits co-integres sur un meme substrat | |
US10158027B2 (en) | Semiconductor device and method for manufacturing same | |
GB0327848D0 (en) | Array substrate having color filter ion thin film transistor structure for lcd device and method of fabricating the same | |
CA2647233A1 (fr) | Cellule de memoire anti-fusible | |
US11107899B2 (en) | Plate design to decrease noise in semiconductor devices | |
TW200616225A (en) | Structure and method for making strained channel field effect transistor using sacrificial spacer | |
US9012906B2 (en) | Thin film transistor, array substrate, and display apparatus | |
US6498360B1 (en) | Coupled-well structure for transport channel in field effect transistors | |
JP2010079038A5 (fr) | ||
US10050028B2 (en) | Semiconductor device with reduced leakage current | |
JPH03257861A (ja) | 半導体装置 | |
US20150364494A1 (en) | Array substrate and display device | |
FR3072375B1 (fr) | Dispositif quantique a qubits de spin couples de maniere modulable | |
CN114252902A (zh) | 感测装置 | |
CN104465673A (zh) | 阵列基板及其制造方法、以及显示装置 | |
TW200703663A (en) | Thin film transistor substrate, liquid crystal display including the same, and manufacturing method thereof | |
US9029861B2 (en) | Thin film transistor and shift register | |
US8835206B2 (en) | Pixel structure, array substrate and method of fabricating the same | |
US20190072797A1 (en) | Thin-film transistor, thin-film transistor substrate, and liquid crystal display device | |
US11264514B2 (en) | Thin film transistor, pixel structure, display substrate, display panel, and display device | |
WO2017080004A1 (fr) | Écran d'affichage à cristaux liquides et dispositif d'affichage à cristaux liquides | |
JP2015170642A (ja) | 表示装置 | |
JP2014110323A (ja) | 表示装置 | |
JPH04206970A (ja) | 薄膜半導体装置 | |
US7011992B2 (en) | Method of fabricating a thin film transistor using dual or multiple gates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20190830 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |