FR3074955B1 - Source d'electrons a commande optique amelioree - Google Patents

Source d'electrons a commande optique amelioree Download PDF

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Publication number
FR3074955B1
FR3074955B1 FR1701284A FR1701284A FR3074955B1 FR 3074955 B1 FR3074955 B1 FR 3074955B1 FR 1701284 A FR1701284 A FR 1701284A FR 1701284 A FR1701284 A FR 1701284A FR 3074955 B1 FR3074955 B1 FR 3074955B1
Authority
FR
France
Prior art keywords
electron source
controlled electron
optically controlled
improved optically
monolayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1701284A
Other languages
English (en)
Other versions
FR3074955A1 (fr
Inventor
Pierre Legagneux
Laurent Gangloff
Didier Pribat
Stephan Purcell
Anthony Ayari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Claude Bernard Lyon 1 UCBL
Thales SA
Ecole Polytechnique
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Claude Bernard Lyon 1 UCBL
Thales SA
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Claude Bernard Lyon 1 UCBL, Thales SA, Ecole Polytechnique filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1701284A priority Critical patent/FR3074955B1/fr
Priority to PCT/EP2018/083342 priority patent/WO2019110502A1/fr
Priority to EP18811032.4A priority patent/EP3721464A1/fr
Publication of FR3074955A1 publication Critical patent/FR3074955A1/fr
Application granted granted Critical
Publication of FR3074955B1 publication Critical patent/FR3074955B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06—Cathodes
    • H01J35/065—Field emission, photo emission or secondary emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H01J2201/30411—Microengineered point emitters conical shaped, e.g. Spindt type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H01J2201/30415—Microengineered point emitters needle shaped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30434—Nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission

Abstract

L'invention concerne une source d'électrons (100) à commande optique comprenant au moins une pointe (P) réalisée en un matériau conducteur (Cond) dont la surface au voisinage de l'apex est recouverte d'au moins une monocouche (L) d'un semiconducteur bidimensionnel (semi2D), une monocouche comprenant entre 1 et 5 plans atomiques.
FR1701284A 2017-12-07 2017-12-07 Source d'electrons a commande optique amelioree Active FR3074955B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1701284A FR3074955B1 (fr) 2017-12-07 2017-12-07 Source d'electrons a commande optique amelioree
PCT/EP2018/083342 WO2019110502A1 (fr) 2017-12-07 2018-12-03 Source d'électrons à commande optique améliorée
EP18811032.4A EP3721464A1 (fr) 2017-12-07 2018-12-03 Source d'électrons à commande optique améliorée

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1701284 2017-12-07
FR1701284A FR3074955B1 (fr) 2017-12-07 2017-12-07 Source d'electrons a commande optique amelioree

Publications (2)

Publication Number Publication Date
FR3074955A1 FR3074955A1 (fr) 2019-06-14
FR3074955B1 true FR3074955B1 (fr) 2021-01-08

Family

ID=62749009

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1701284A Active FR3074955B1 (fr) 2017-12-07 2017-12-07 Source d'electrons a commande optique amelioree

Country Status (3)

Country Link
EP (1) EP3721464A1 (fr)
FR (1) FR3074955B1 (fr)
WO (1) WO2019110502A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113205987B (zh) * 2021-04-07 2022-06-17 清华大学 基于多层二维材料的平面光致电子发射源

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245052A1 (de) * 2002-09-26 2004-04-08 Leo Elektronenmikroskopie Gmbh Elektronenstrahlquelle und elektronenoptischer Apparat mit einer solchen
GB0412538D0 (en) * 2004-06-04 2004-07-07 Council Cent Lab Res Councils Time resolving microscope and chemical specificity microscope
EP1705684A1 (fr) * 2005-03-22 2006-09-27 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emetteur stabilisé et méthode pour le stabiliser
US7888654B2 (en) * 2007-01-24 2011-02-15 Fei Company Cold field emitter
JP4975095B2 (ja) * 2007-03-29 2012-07-11 株式会社アドバンテスト 電子銃及び電子ビーム露光装置
FR2926924B1 (fr) * 2008-01-25 2012-10-12 Thales Sa Source radiogene comprenant au moins une source d'electrons associee a un dispositif photoelectrique de commande
US8518542B2 (en) * 2009-05-26 2013-08-27 Life Technology Research Institute, Inc. Carbon film and carbon film structure
FR3002526B1 (fr) * 2013-02-22 2015-10-16 Thales Sa Procede de fabrication d'un nanotube de carbone multi-parois; nanotube, source d'electrons et dispositif associes
JP6192097B2 (ja) * 2013-05-31 2017-09-06 国立研究開発法人物質・材料研究機構 フォトカソード型電子線源、その作成方法及びフォトカソード型電子線源システム
US9837239B2 (en) * 2013-11-07 2017-12-05 Gregory Hirsch Techniques for optimizing nanotips derived from frozen taylor cones
CN106383250B (zh) * 2016-10-11 2020-05-19 中山大学 一种采用二维原子晶体材料的扫描隧道显微镜探针

Also Published As

Publication number Publication date
FR3074955A1 (fr) 2019-06-14
WO2019110502A1 (fr) 2019-06-13
EP3721464A1 (fr) 2020-10-14

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