FR3065320B1 - Pixel de detection de temps de vol - Google Patents
Pixel de detection de temps de vol Download PDFInfo
- Publication number
- FR3065320B1 FR3065320B1 FR1753344A FR1753344A FR3065320B1 FR 3065320 B1 FR3065320 B1 FR 3065320B1 FR 1753344 A FR1753344 A FR 1753344A FR 1753344 A FR1753344 A FR 1753344A FR 3065320 B1 FR3065320 B1 FR 3065320B1
- Authority
- FR
- France
- Prior art keywords
- time detection
- detection pixel
- flight time
- storage area
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title abstract 2
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
L'invention concerne un capteur de détection de temps de vol comprenant une pluralité de pixels, chaque pixel comprenant une zone photosensible (PD) et au moins deux ensembles (Qi) comprenant chacun : une zone de stockage de charges (memi) ; un transistor de transfert (Tmem-j) adapté à contrôler des transferts de charges de la zone photosensible (PD) vers la zone de stockage de charges ; et un moyen de lecture (Vri, 23, 25, LECT) apte à mesurer de manière non-destructive la quantité de charges stockée dans la zone de stockage.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1753344A FR3065320B1 (fr) | 2017-04-18 | 2017-04-18 | Pixel de detection de temps de vol |
US15/953,925 US10951844B2 (en) | 2017-04-18 | 2018-04-16 | Time-of-flight detection pixel |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1753344A FR3065320B1 (fr) | 2017-04-18 | 2017-04-18 | Pixel de detection de temps de vol |
FR1753344 | 2017-04-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3065320A1 FR3065320A1 (fr) | 2018-10-19 |
FR3065320B1 true FR3065320B1 (fr) | 2020-02-07 |
Family
ID=60302158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1753344A Active FR3065320B1 (fr) | 2017-04-18 | 2017-04-18 | Pixel de detection de temps de vol |
Country Status (2)
Country | Link |
---|---|
US (1) | US10951844B2 (fr) |
FR (1) | FR3065320B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7308830B2 (ja) | 2017-12-13 | 2023-07-14 | マジック リープ, インコーポレイテッド | コンピュータビジョンアプリケーションのためのグロバールシャッタピクセル回路および方法 |
JP2020148706A (ja) * | 2019-03-15 | 2020-09-17 | オムロン株式会社 | 投光装置およびこれを備えたtofセンサ、距離画像生成装置 |
US11923465B2 (en) * | 2019-12-19 | 2024-03-05 | Stmicroelectronics (Crolles 2) Sas | Photodiode comprising a memory area |
GB2590645A (en) * | 2019-12-20 | 2021-07-07 | Teledyne Uk Ltd | Imaging device |
FR3109841B1 (fr) * | 2020-04-30 | 2022-07-15 | St Microelectronics Crolles 2 Sas | Pixel comprenant une zone de stockage de charges |
JP2022071539A (ja) * | 2020-10-28 | 2022-05-16 | 凸版印刷株式会社 | 距離画像撮像素子及び距離画像撮像装置 |
EP4020006A1 (fr) * | 2020-12-23 | 2022-06-29 | STMicroelectronics (Research & Development) Limited | Capteur de temps de vol indirect |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1622200A1 (fr) * | 2004-07-26 | 2006-02-01 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Pixel photodetecteur à l'état solide et méthode de photo-détection |
US8928792B1 (en) * | 2011-01-31 | 2015-01-06 | Aptina Imaging Corporation | CMOS image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several BCMD transistors coupled to a single photodiode and dual gate BCMD transistors for charge storage and sensing |
JP6374690B2 (ja) * | 2014-04-01 | 2018-08-15 | キヤノン株式会社 | 撮像装置及びその制御方法、プログラム、記憶媒体 |
FR3027732B1 (fr) * | 2014-10-27 | 2016-12-23 | Commissariat Energie Atomique | Capteur d'image a electrodes verticales |
DE102015112398A1 (de) * | 2015-07-29 | 2017-02-02 | Infineon Technologies Ag | Bilderzeugungsvorrichtung und Bilderzeugungsverfahren zum Erfassen von Bilderzeugungsdaten über ein Pixelarray |
FR3046495B1 (fr) * | 2015-12-30 | 2018-02-16 | Stmicroelectronics (Crolles 2) Sas | Pixel de detection de temps de vol |
JP7308830B2 (ja) * | 2017-12-13 | 2023-07-14 | マジック リープ, インコーポレイテッド | コンピュータビジョンアプリケーションのためのグロバールシャッタピクセル回路および方法 |
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2017
- 2017-04-18 FR FR1753344A patent/FR3065320B1/fr active Active
-
2018
- 2018-04-16 US US15/953,925 patent/US10951844B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3065320A1 (fr) | 2018-10-19 |
US10951844B2 (en) | 2021-03-16 |
US20180302582A1 (en) | 2018-10-18 |
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