FR3064283B1 - PROCESS AND REACTOR DEVICE FOR PRODUCING THIN LAYERS IMPLEMENTING A SUCCESSION OF DEPOSIT STAGES, AND APPLICATIONS OF THIS PROCESS - Google Patents

PROCESS AND REACTOR DEVICE FOR PRODUCING THIN LAYERS IMPLEMENTING A SUCCESSION OF DEPOSIT STAGES, AND APPLICATIONS OF THIS PROCESS Download PDF

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Publication number
FR3064283B1
FR3064283B1 FR1752341A FR1752341A FR3064283B1 FR 3064283 B1 FR3064283 B1 FR 3064283B1 FR 1752341 A FR1752341 A FR 1752341A FR 1752341 A FR1752341 A FR 1752341A FR 3064283 B1 FR3064283 B1 FR 3064283B1
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France
Prior art keywords
deposition
deposit
succession
stages
applications
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FR1752341A
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French (fr)
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FR3064283A1 (en
Inventor
Fabien Piallat
Julien Vitiello
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Kobus SAS
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Kobus SAS
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Priority to FR1752341A priority Critical patent/FR3064283B1/en
Priority to PCT/EP2018/056954 priority patent/WO2018172321A1/en
Publication of FR3064283A1 publication Critical patent/FR3064283A1/en
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé de dépôt comprenant une mise en œuvre séquentielle d'au moins deux types de dépôt parmi un dépôt de type ALD, et un dépôt de type CVD pulsé, et un dépôt de type CVD. Chaque dépôt peut éventuellement être assisté par plasma. Les différents dépôts sont de préférence réalisés dans une même chambre, permettant de mettre en œuvre les différents types de dépôt. Les séquences de dépôt sont réalisées de sorte à obtenir des caractéristiques de couches particulières, tel que par exemple une conformité de valeur déterminée, une couche d'accroche de qualité particulière ou une couche barrière de qualité particulière. Application notamment pour la réalisation de trous d'interconnexion (vias)Deposition process comprising a sequential implementation of at least two types of deposition among an ALD type deposition, and a pulsed CVD type deposition, and a CVD type deposition. Each deposition can optionally be assisted by plasma. The different deposits are preferably made in the same chamber, making it possible to implement the different types of deposit. The deposition sequences are carried out so as to obtain characteristics of particular layers, such as for example a conformity of determined value, an adhesion layer of particular quality or a barrier layer of particular quality. Application in particular for the production of interconnection holes (vias)

FR1752341A 2017-03-22 2017-03-22 PROCESS AND REACTOR DEVICE FOR PRODUCING THIN LAYERS IMPLEMENTING A SUCCESSION OF DEPOSIT STAGES, AND APPLICATIONS OF THIS PROCESS Active FR3064283B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1752341A FR3064283B1 (en) 2017-03-22 2017-03-22 PROCESS AND REACTOR DEVICE FOR PRODUCING THIN LAYERS IMPLEMENTING A SUCCESSION OF DEPOSIT STAGES, AND APPLICATIONS OF THIS PROCESS
PCT/EP2018/056954 WO2018172321A1 (en) 2017-03-22 2018-03-20 Reactor device and method for producing thin layers, implementing a series of deposition steps, and uses of this method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1752341A FR3064283B1 (en) 2017-03-22 2017-03-22 PROCESS AND REACTOR DEVICE FOR PRODUCING THIN LAYERS IMPLEMENTING A SUCCESSION OF DEPOSIT STAGES, AND APPLICATIONS OF THIS PROCESS
FR1752341 2017-03-22

Publications (2)

Publication Number Publication Date
FR3064283A1 FR3064283A1 (en) 2018-09-28
FR3064283B1 true FR3064283B1 (en) 2022-04-29

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FR1752341A Active FR3064283B1 (en) 2017-03-22 2017-03-22 PROCESS AND REACTOR DEVICE FOR PRODUCING THIN LAYERS IMPLEMENTING A SUCCESSION OF DEPOSIT STAGES, AND APPLICATIONS OF THIS PROCESS

Country Status (2)

Country Link
FR (1) FR3064283B1 (en)
WO (1) WO2018172321A1 (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030059535A1 (en) * 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
CN101061253B (en) 2004-11-22 2010-12-22 应用材料股份有限公司 Substrate processing apparatus using a batch processing chamber
JP5513767B2 (en) * 2008-06-25 2014-06-04 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and semiconductor device
US20110256734A1 (en) * 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
US9257274B2 (en) * 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US20120015113A1 (en) 2010-07-13 2012-01-19 Applied Materials, Inc. Methods for forming low stress dielectric films
US9362109B2 (en) * 2013-10-16 2016-06-07 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US10214817B2 (en) * 2013-10-16 2019-02-26 The Board Of Trustees Of The University Of Illinois Multi-metal films, alternating film multilayers, formation methods and deposition system
FR3018825B1 (en) 2014-03-21 2017-09-01 Altatech Semiconductor GAS PHASE DEPOSITION METHOD

Also Published As

Publication number Publication date
FR3064283A1 (en) 2018-09-28
WO2018172321A1 (en) 2018-09-27

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