FR3053835B1 - Dispositif cascode integre monolithiquement - Google Patents

Dispositif cascode integre monolithiquement

Info

Publication number
FR3053835B1
FR3053835B1 FR1656472A FR1656472A FR3053835B1 FR 3053835 B1 FR3053835 B1 FR 3053835B1 FR 1656472 A FR1656472 A FR 1656472A FR 1656472 A FR1656472 A FR 1656472A FR 3053835 B1 FR3053835 B1 FR 3053835B1
Authority
FR
France
Prior art keywords
useful layer
component
monolithically integrated
cascode device
support substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1656472A
Other languages
English (en)
Other versions
FR3053835A1 (fr
Inventor
Verde Domenico Lo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics France SAS
Original Assignee
Exagan SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exagan SAS filed Critical Exagan SAS
Priority to FR1656472A priority Critical patent/FR3053835B1/fr
Priority to PCT/FR2017/051638 priority patent/WO2018007711A1/fr
Publication of FR3053835A1 publication Critical patent/FR3053835A1/fr
Application granted granted Critical
Publication of FR3053835B1 publication Critical patent/FR3053835B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif hybride (500) comprenant un premier composant (200) en matériau semi-conducteur du groupe IV et un deuxième composant (300) en matériaux semi-conducteurs du groupe III-N. Le procédé est remarquable en ce qu'il comprend : a) La formation d'au moins un ilot (20) constituant une première couche utile (2) sur un substrat support (1) ; la première couche utile (2) et le substrat support (1) étant chacun en matériau du groupe IV ; b) La formation d'une deuxième couche utile (3) en matériaux semi-conducteurs du groupe III-N sur le substrat support (1) et sur l'ilot (20) ; c) Le retrait d'une partie de la deuxième couche utile (3) pour exposer la première couche utile (2) ; d) L'élaboration du premier composant (200) dans et sur la première couche utile (2) et du deuxième composant (300) dans et sur la deuxième couche utile (3).
FR1656472A 2016-07-06 2016-07-06 Dispositif cascode integre monolithiquement Active FR3053835B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1656472A FR3053835B1 (fr) 2016-07-06 2016-07-06 Dispositif cascode integre monolithiquement
PCT/FR2017/051638 WO2018007711A1 (fr) 2016-07-06 2017-06-20 Dispositif cascode integre monolithiquement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1656472A FR3053835B1 (fr) 2016-07-06 2016-07-06 Dispositif cascode integre monolithiquement

Publications (2)

Publication Number Publication Date
FR3053835A1 FR3053835A1 (fr) 2018-01-12
FR3053835B1 true FR3053835B1 (fr) 2018-11-16

Family

ID=56787626

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1656472A Active FR3053835B1 (fr) 2016-07-06 2016-07-06 Dispositif cascode integre monolithiquement

Country Status (2)

Country Link
FR (1) FR3053835B1 (fr)
WO (1) WO2018007711A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3624179A1 (fr) * 2018-09-13 2020-03-18 IMEC vzw Intégration d'un dispositif iii-v sur un substrat de si
EP3809457A1 (fr) 2019-10-16 2021-04-21 IMEC vzw Co-intégration de dispositifs iii-v avec dispositifs de groupe iv

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US8242510B2 (en) * 2010-01-28 2012-08-14 Intersil Americas Inc. Monolithic integration of gallium nitride and silicon devices and circuits, structure and method
US9406674B2 (en) * 2013-07-12 2016-08-02 Infineon Technologies Americas Corp. Integrated III-nitride D-mode HFET with cascoded pair half bridge

Also Published As

Publication number Publication date
FR3053835A1 (fr) 2018-01-12
WO2018007711A1 (fr) 2018-01-11

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