FR3050320B1 - DIODE STRUCTURE - Google Patents

DIODE STRUCTURE Download PDF

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Publication number
FR3050320B1
FR3050320B1 FR1653369A FR1653369A FR3050320B1 FR 3050320 B1 FR3050320 B1 FR 3050320B1 FR 1653369 A FR1653369 A FR 1653369A FR 1653369 A FR1653369 A FR 1653369A FR 3050320 B1 FR3050320 B1 FR 3050320B1
Authority
FR
France
Prior art keywords
gate
transistor
doped
coupled
type doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1653369A
Other languages
French (fr)
Other versions
FR3050320A1 (en
Inventor
Frederic Lanois
Alexei Ankoudinov
Vladimir Rodov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1653369A priority Critical patent/FR3050320B1/en
Priority to EP16200596.1A priority patent/EP3232479B1/en
Priority to EP17182781.9A priority patent/EP3261129B1/en
Priority to US15/365,335 priority patent/US10177218B2/en
Priority to CN201621301034.5U priority patent/CN206401321U/en
Priority to CN201611081662.1A priority patent/CN107302019B/en
Publication of FR3050320A1 publication Critical patent/FR3050320A1/en
Application granted granted Critical
Publication of FR3050320B1 publication Critical patent/FR3050320B1/en
Priority to US16/197,011 priority patent/US10903311B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Abstract

L'invention concerne une diode comprenant entre des électrodes supérieure (A) et inférieure (K) : des première (3) et deuxième (54) portions de substrat semiconducteur dopé de type N connectées à l'électrode inférieure ; un premier transistor vertical (T1) et un deuxième transistor (T2) formés dans la première portion et connectés en série entre les électrodes, la grille (14) du premier transistor étant dopée de type N et couplée à l'électrode supérieure, le deuxième transistor étant à canal P et ayant une grille (24) dopée du type P ; des première (80) et deuxième (82) zones dopées du deuxième type de conductivité situées dans la deuxième portion et séparées par une partie de substrat surmontée d'une autre grille (84) dopée du type N, la première zone dopée étant couplée à la grille du deuxième transistor, la deuxième zone dopée et ladite autre grille étant couplées à l'électrode supérieure.The invention relates to a diode comprising between upper (A) and lower (K) electrodes: first (3) and second (54) portions of N-type doped semiconductor substrate connected to the lower electrode; a first vertical transistor (T1) and a second transistor (T2) formed in the first portion and connected in series between the electrodes, the gate (14) of the first transistor being N-type doped and coupled to the upper electrode, the second being a P-channel transistor and having a P-type doped gate (24); first (80) and second (82) doped zones of the second conductivity type located in the second portion and separated by a substrate part surmounted by another N-type doped gate (84), the first doped zone being coupled to the gate of the second transistor, the second doped zone and said other gate being coupled to the upper electrode.

FR1653369A 2016-04-15 2016-04-15 DIODE STRUCTURE Expired - Fee Related FR3050320B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1653369A FR3050320B1 (en) 2016-04-15 2016-04-15 DIODE STRUCTURE
EP17182781.9A EP3261129B1 (en) 2016-04-15 2016-11-24 Diode structure
EP16200596.1A EP3232479B1 (en) 2016-04-15 2016-11-24 Diode structure
CN201621301034.5U CN206401321U (en) 2016-04-15 2016-11-30 Semiconductor devices, diode and semiconductor structure
US15/365,335 US10177218B2 (en) 2016-04-15 2016-11-30 Vertical semiconductor structure
CN201611081662.1A CN107302019B (en) 2016-04-15 2016-11-30 Vertical semiconductor structure
US16/197,011 US10903311B2 (en) 2016-04-15 2018-11-20 Vertical semiconductor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1653369 2016-04-15
FR1653369A FR3050320B1 (en) 2016-04-15 2016-04-15 DIODE STRUCTURE

Publications (2)

Publication Number Publication Date
FR3050320A1 FR3050320A1 (en) 2017-10-20
FR3050320B1 true FR3050320B1 (en) 2018-05-11

Family

ID=56087427

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1653369A Expired - Fee Related FR3050320B1 (en) 2016-04-15 2016-04-15 DIODE STRUCTURE

Country Status (1)

Country Link
FR (1) FR3050320B1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060250736A1 (en) * 2005-05-06 2006-11-09 Harris Richard A Transient blocking apparatus with electrostatic discharge protection
WO2010080855A2 (en) * 2009-01-06 2010-07-15 Lakota Technologies Inc. Self-bootstrapping field effect diode structures and methods

Also Published As

Publication number Publication date
FR3050320A1 (en) 2017-10-20

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