FR3038141A1 - OPTICAL PHOTOVOLTAIC DEVICE WITH DOUBLE BACK PLASMONIC FILTRATION - Google Patents
OPTICAL PHOTOVOLTAIC DEVICE WITH DOUBLE BACK PLASMONIC FILTRATION Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Dispositif optique photovoltaïque à filtration plasmonique double arrière caractérisé en ce qu'il comporte : - Des rangées de cellules solaires cristallines (1) interconnectées pour former une matrice (2) encapsulée entre un dioptre entrant (4) et sortant (7) dont la distance (e) séparant deux rangées est égale ou inférieure au segment d'une cellule solaire (1) - Deux filtres plasmoniques (3) collés sur le dioptre sortant (7) et positionnés en parallèle de part et d'autre d'une rangée de cellules solaires (1) dans l'intervalle (e) séparant les cellules solaires (1)Photovoltaic optical device with double rear plasmonic filtration characterized in that it comprises: - rows of crystalline solar cells (1) interconnected to form a matrix (2) encapsulated between an incoming diopter (4) and outgoing (7) whose distance (e) separating two rows is equal to or smaller than the segment of a solar cell (1) - Two plasmonic filters (3) glued to the outgoing diopter (7) and positioned in parallel on either side of a row of solar cells (1) in the gap (e) separating the solar cells (1)
Description
-1 - Dispositif optique photovoltaïque à filtration plasmonique double arrière Introduction à l'art : La fabrication de module photovoltaïque cristallin requiert le processus suivant : - nettoyage du verre ou positionnement d'un matériau à forte transparence - positionnement d'un film encapsulant EVA « Ethylène Vinyle Acétate » qui est en majorité de l'éthylène vinyle acétate sur le verre ou matériau à forte transparence - soudure d'un ruban de cuivre ayant une couche de protection à base d'un alliage à base d'argent, de plomb et d'étain : la température de la soudure n'excède pas 250°C et ne dure pas plus de 3 secondes par cellules solaires ayant des zones en forme de ligne collecteur de courant des métallisations de l'émetteur sur une largeur de 1,5 à 3 millimètres interconnexion de la polarité négative 'face avant d'une cellule d'un substrat de type P à la polarité positive <face arrière d'une cellule d'un substrat de type P' par exemple disposition en rangée de cellules soudées interconnexion des rangées pour un montage en série des cellules solaires nécessitant une soudure de chaque ligne de collecteur de courant positionnement d'un film encapsulant sur la matrice de cellules - positionnement d'un film arrière de protection électrique ou d'un verre ou autre matériaux isolant - lamination à des fins d'encapsulation des cellules solaires Cette technique est unilatéralement utilisée mais a des inconvénients : - le matériau encapsulant EVA a une viscosité d'une grande variabilité en fonction de la température ce qui induit une pression mécanique sur l'ensemble du dispositif des cellules solaires interconnectées - le matériau encapsulant EVA contenant 1% d'eau libère de l'acide acétique et du peroxyde d'hydrogène en permanence qui se retrouvent piégés dans le module photovoltaïque entrainant des corrosions, des réactions chimiques avec les surfaces des cellules solaires, des réactions chimiques avec la surface intérieure du verre et crée la corrosion du verre par la formation de halogénures qui sont des pièges d'électrons mais aussi avec le polymère utilisé en protection électrique du module - le matériau EVA ayant un indice de réfraction part réelle variant entre 1,49 et 1,47 sur la bande de rayonnement solaire, ce qui correspond une réponse spectrale proche du verre blanc utilisé, à savoir que le verre ait un traitement particulier - le matériau EVA étant réticulé à la surface du verre, il est très difficile de séparer par quelques techniques que ce soient le film EVA du verre et le recyclage du verre comportant l'EVA rend les matériaux constituant le verre trop pollués et donc rendent le recyclage du module non fonctionnel - rencapsulation de 60 cellules solaires sur silicium monocristallin de wafer de format pseudo carré de 156mm de côté obtenu par la méthode de croissance Czochralski, « CZ » cellule à homojonction et émetteur homogène de 18,6% de rendement entraine les pertes suivantes : à partir d'un ruban interconnectant en série les cellules de 2mm de largeur par 0,2mm d'épaisseur et interconnectant les rangées de cellules thermo-soudées par un ruban de 5 par 0,3mm, les pertes électriques sont de 2,5% les pertes optiques sont de 1% pour un verre avec une couche de silice poreuse d'indice de réfraction variant entre 1,23 et 1,33 pour un verre de transmittance sur le spectre solaire de 93% le module cristallin de ces 60 cellules solaires de 18,6% aura un rendement de 15,85% soit 2,75% et son comportement en température sera très affecté par Pencapsulation la cellule solaire de 18,6% sur silicium CZ d'orientation « 1-0-0 » à émetteur homogène aura un coefficient de variation de sa puissance par rapport à la température d'un facteur négatif de 0,45%/°Kelvin et le module cristallin utilisant PEVA entre autre aura un coefficient de variation de sa puissance d'un facteur négatif de 0,51%/°K la combinaison des matériaux verres à 93% de transmittance avec l'EVA et des cellules à émetteur homogène est compatible mais l'évolution technologique des cellules à homojonction vers des émetteurs sélectifs et des passivations arrières, la réponse spectrale des cellules évoluent grandement rendant la combinaison des matériaux d'un module impropre et non efficiente le module cristallin silicium se caractérise également par le comportement optique du silicium à savoir un fort coefficient d'absorption dans les ultra-violets « UV » et une quasi transparence aux infrarouges « IR » et le comportement en fonction de la température d'un module cristallin est intimement lié à la capacité de capter la bande solaire spectrale dont les longueurs d'onde de 250 à 1300nrn représentant 80% du spectre 3 0 3 8 1 4 1 -2- La présente invention décrit un dispositif intégré optique permettant de filtrer le spectre lumineux par trois composants pour apporter à la jonction de cellule solaire les photons aux longueurs d'onde absorbées et transmettre les longueurs d'onde utiles à des applications sous le panneau photovoltaïque et réfléchir les longueurs d'onde qui ne sont pas utiles à la production photovoltaïque.-1 - Photovoltaic optical device with double rear plasmonic filtration Introduction to the art: The manufacture of crystalline photovoltaic modules requires the following process: - glass cleaning or positioning of a highly transparent material - positioning of an EVA encapsulant film « Ethylene Vinyl Acetate "which is predominantly ethylene vinyl acetate on glass or material with high transparency - welding of a copper tape having a protective layer based on a silver-based alloy, lead and of tin: the temperature of the solder does not exceed 250 ° C and lasts no more than 3 seconds per solar cell having areas in the form of current collector line of the metallizations of the emitter over a width of 1.5 to 3 millimeters interconnection of the negative polarity 'front side of a cell of a P-type substrate to the positive polarity <backside of a cell of a P-type substrate' for example row of welded cells row interconnection for series mounting of solar cells requiring soldering of each current collector line positioning of a film encapsulating on the matrix of cells - positioning of a rear film of electrical protection or a glass or other insulating material - lamination for the purpose of encapsulation of solar cells This technique is used unilaterally but has drawbacks: the encapsulating material EVA has a viscosity of great variability as a function of the temperature which induces a pressure mechanics across the entire interconnected solar cells device - the EVA encapsulant material containing 1% water releases acetic acid and hydrogen peroxide continuously which get trapped in the photovoltaic module causing corrosions, reactions with the surfaces of solar cells, chemical reactions with the surfa this interior of the glass and creates the corrosion of the glass by the formation of halides which are traps of electrons but also with the polymer used in electrical protection of the module - the EVA material having a real refractive index of between 1.49 and 1.47 on the solar radiation band, which corresponds to a spectral response close to the white glass used, namely that the glass has a particular treatment - the EVA material being cross-linked on the surface of the glass, it is very difficult to separate by some techniques, be it the EVA film of glass and the recycling of glass with EVA, make the materials constituting the glass too polluted and thus make the recycling of the module non-functional - 60 solar cells on monocrystalline silicon wafer pseudo format square of 156mm side obtained by the Czochralski growth method, "CZ" homojunction cell and homogeneous transmitter of 18.6% of yield This leads to the following losses: from a ribbon interconnecting the cells 2 mm wide by 0.2 mm thick and interconnecting the rows of heat-sealed cells with a ribbon of 5 by 0.3 mm, the electrical losses are 2.5% optical losses are 1% for a glass with a porous silica layer of refractive index varying between 1.23 and 1.33 for a glass of transmittance on the solar spectrum of 93% the module crystalline of these 60 solar cells of 18.6% will have a yield of 15.85% or 2.75% and its temperature behavior will be very affected by encapsulation the solar cell of 18.6% on silicon CZ oriented "1 -0-0 "with homogeneous emitter will have a coefficient of variation of its power with respect to the temperature of a negative factor of 0,45% / ° Kelvin and the crystalline module using PEVA among others will have a coefficient of variation of its power a negative factor of 0.51% / ° K the combination of materials 93% transmittance glasses with EVA and homogeneous transmitter cells are compatible but the technological evolution of homojunction cells towards selective emitters and back passivations, the spectral response of the cells evolve greatly, making the combination of an improper and non-efficient module the crystalline silicon module is also characterized by the optical behavior of silicon, namely a high absorption coefficient in ultraviolet "UV" and a quasi-transparency with infrared "IR" and the behavior according to The temperature of a crystalline modulus is intimately related to the ability to capture the spectral solar band whose wavelengths from 250 to 1300 nm represent 80% of the spectrum. integrated optical device for filtering the light spectrum by three components to bring the solar cell junction the photo ns at wavelengths absorbed and transmit wavelengths useful for applications under the photovoltaic panel and reflect wavelengths that are not useful for photovoltaic production.
5 Description du dispositif optique photovoltaïque à filtration plasmonique double arrière : Le dispositif optique photovoltaïque à filtration plasmonique double arrière caractérisé en ce qu'il 10 comporte selon la figure n°1 - des rangées de cellules solaires cristallines (1) interconnectées pour former une matrice (2) encapsulée entre un dioptre entrant (4) et sortant (7) dont la distance (e) séparant deux rangées est égale ou inférieure au segment d'une cellule solaire (1) - deux filtres plasmoniques (3) collés sur le dioptre sortant (7) et positionnés en parallèle de part et 15 d'autre d'une rangée de cellules solaires (1) dans l'intervalle (e) séparant les cellules solaires (1) selon la figure n°2 Ce Dispositif optique photovoltaïque à filtration plasmonique double arrière selon la figure n°3 caractérisé en 20 ce que le filtre plasmonique (3) comporte : - un composé métallique (3') à partir de matériaux conducteurs choisi parmi l'Argent, l'Aluminium, le Silicium, l'Or, le Chrome, le Zinc, le Cuivre, le Nickel, le Cobalt, le Lithium, le Platine des nanotubes de Carbone, de Nitrure de Bore - la surface supérieure du composé métallique (3) est texturée en tranchées parallèles de forme 25 triangulaire (3") avec une inclinaison des parois de tranchées parallèle inférieure (3°) à 90° et de largeur de tranchée inférieure ou égale à 50micron caractérisant le pas des sillons formant les parois des tranchées le composé métallique a une face postérieure (3") enduite d'un matériau encapsulant choisi parmi l'éthylène vinyle acétate, les thermo-plastiques, les silicones, les acryliques 30 Ce Dispositif optique photovoltaïque à filtration plasmonique double arrière caractérisé en ce que le filtre plasmonique (3) ait une longueur égale à la rangée de cellules solaires (1) selon la figure n°2 et constitue une bande réfléchissante. Ce Dispositif optique photovoltaïque à filtration plasmonique double arrière selon la figure n°2 caractérisé en ce que la bande réfléchissante constituant le filtre plasmonique (3) ait une largeur inférieure ou égale à 32mm par unité de bande réfléchissante. Le dispositif optique photovoltaïque à filtration plasmonique double arrière selon la figure n°4 caractérisé en ce que l'espace libre de passage de lumière à travers le dispositif optique photovoltaïque à filtration plasmonique double arrière soit d'une largeur (e) entre deux rangées de cellules solaires (1) diminué de la largeur de bande réfléchissante et de la longueur de la rangée de cellules solaires (1). Ce dispositif optique photovoltaïque à filtration plasmonique double arrière selon figure n°4 caractérisé en ce que la face supérieure de la matrice (2) de cellules solaires soit encapsulée avec le dioptre entrant (4) par un matériau encapsulant (5) choisi parmi l'éthylène vinyle acétate, les thermo-plastiques, les silicones, les acryliques.Description of the Photovoltaic Double Rear Plasmonically Filtered Optical Device: The photovoltaic optical device with double rear plasmonic filtration characterized in that it comprises, according to FIG. 1, rows of crystalline solar cells (1) interconnected to form a matrix (2) encapsulated between an incoming (4) and outgoing (7) diopter whose distance (e) separating two rows is equal to or smaller than the segment of a solar cell (1) - two plasmonic filters (3) glued on the diopter outgoing (7) and positioned in parallel on either side of a row of solar cells (1) in the gap (e) separating the solar cells (1) according to Figure No. 2 This photovoltaic optical device to rear double plasmonic filtration according to FIG. 3 characterized in that the plasmonic filter (3) comprises: a metal compound (3 ') from conductive materials chosen from among the silver and aluminum , Silicon, Gold, Chromium, Zinc, Copper, Nickel, Cobalt, Lithium, Platinum Carbon Nanotubes, Boron Nitride - the upper surface of the metal compound (3) is textured in triangular parallel trenches (3 ") with a trench wall inclination less than (3 °) at 90 ° and trench width less than or equal to 50 micron characterizing the pitch of trenches forming the trench walls the metal compound a a posterior face (3 ") coated with an encapsulant material selected from ethylene vinyl acetate, thermoplastics, silicones, acrylics. This photovoltaic optical device with double rear plasmonic filtration characterized in that the plasmonic filter (3 ) has a length equal to the row of solar cells (1) according to Figure No. 2 and is a reflective band. This photovoltaic optical device with double rear plasmonic filtration according to Figure No. 2 characterized in that the reflective band constituting the plasmonic filter (3) has a width less than or equal to 32 mm per unit of reflective band. The photovoltaic optical device with double rear plasmonic filtration according to FIG. 4, characterized in that the free space for the passage of light through the photovoltaic optical device with double rear plasmonic filtration is of a width (e) between two rows of solar cells (1) minus the reflective bandwidth and the length of the row of solar cells (1). This photovoltaic optical device with double rear plasmonic filtration according to FIG. 4 characterized in that the upper face of the matrix (2) of solar cells is encapsulated with the incoming diopter (4) by an encapsulating material (5) chosen from ethylene vinyl acetate, thermoplastics, silicones, acrylics.
50 Ce dispositif optique photovoltaïque à filtration plasmonique double arrière selon la figure n°4 caractérisé en ce que le filtre plasmonique (3) soit encapsulé entre la face inférieure de la matrice (2) de cellules solaires et le dioptre sortant (7) par un matériau encapsulant (6) choisi parmi l'éthylène vinyle acétate, les therrno-plastiques, 55 les silicones, les acryliques. Un excemple de construction d'un tel dispositif photovoltaïque se compose de : - une matrice de cellules solaires formée sur silicium monocristallin de type P dont les dimensions du substrat 60 pseudo-carrés sont 156,75x156,75mm pour un rayon de lingot de 205mm - la cellule solaire a une efficacité de conversion de 20,8% minimum pour une puissance maximale de 5,06Watt, interconnectée par un ruban enrobé 35 40 45 3038141 -3- colle conductrice d'une résine de silicone et de cuivre et nano-fils de cuivre sans plomb : la matrice (2) est constituée de 6 rangées de cellules solaires la matrice est organisée pour avoir 125mm d'espace (e) entre les rangées de cellules connectées en série - dioptre entrant (4) est un verre solaire imprimé trempé thermiquement de silicate à transmission de 96% sur le 5 spetre solaire 1.5AM d'épaisseur de 2,6mm - la matrice (2) formée est encapsulée par sa face avant soumis en radiation solaire directe par un encapsulant (5) de silicone liquide transparent aux UV laminé par une lamination liquide - le dioptre sortant (7) est un verre solaire imprimé d'épaisseur de 2mm de silicate à trempe de durcissement ayant deux découpes par polissage du bord du verre pour l'extraction des câbles de polarité de la matrice (2) sur 10 lequel est positionné les bandes réfléchissantes constituant le filtre plasmonique. - le filtre plasmonique est un composé d'aluminium d'épaisseur de 100micron, dont les sillons sont formés sous presse afin de former une texturation de surface en tranchées d'un pas de 20micron et dont les parois forment un angle de 60° (3°) et dont l'interface (3") est une couche produite par évaporation de SiOx et de résine de silicone 15 - les bandes réfléchissantes d'une largeur de 8mrn sont positionnés par un robot selon les axes X, Y pour être placées sur le verre dans l'intervalle entre deux rangées de la matrice (2) de cellules (1) avec la face supérieure texturée (3") orientée vers la face inférieure des cellules solaires et il ne peut y avoir de court-circuit étant donné que l'encapsulant (6) est un silicone liquide d'une viscosité dynamique de 30Pa.s est appliqué par lamination liquide afin d'encapsuler la face inférieure de la matrice (2) et du filtre plasmonique (3) avec le dioptre sortant 20 (7) Un tel dispositif optique photovoltaïque à double filtre plasmonique arrière a une puissance lors du test d'insolation sous condition standard de 224Watt pour seulement 36 cellules solaires de 5,06W et le ratio d'ombrage en proportion de la surface du dispositif est de 45% et permet un passage de lumière en ratio de 25 surface de 55% à travers le dispositif. Cette invention permet la réalisation d'une augmentation de la puissance d'un module photovoltaïque à fotre transparence par une faible densité de matrice de cellules solaires par une filtration plasmonique qui n'est pas sensible au photo vieillissement par la combinaison des matériaux intégrés : la géométrie du filtre est adaptée en 30 fonction de la réponse spectrale de la cellule solaire et correspond à la réflexion de longueurs d'ondes entre 300 et 900nrn : cette fonctionnalité a un intérêt économique par le coût du silicium diminuant ainsi de 50% le nombre de cellules solaires pour la surface du dioptre entrant d'une part et d'une utilisation du spectre lumineux sortant du dioptre sortant pour diverses applications dont la chroma-culture de différents types de végétaux entre autres. 35 40 45 50 55 6050 This photovoltaic optical device with double rear plasmonic filtration according to FIG. 4 characterized in that the plasmonic filter (3) is encapsulated between the lower face of the matrix (2) of solar cells and the outgoing diopter (7) by a encapsulating material (6) selected from ethylene vinyl acetate, thermoplastics, silicones, acrylics. An example of construction of such a photovoltaic device consists of: a matrix of solar cells formed on P-type monocrystalline silicon whose dimensions of the pseudo-square substrate 60 are 156.75 × 156.75 mm for a 205 mm ingot radius. the solar cell has a conversion efficiency of at least 20.8% for a maximum power of 5.06 Watt, interconnected by a coated tape of silicone resin and copper and nano-wire resin lead-free copper: the matrix (2) consists of 6 rows of solar cells the matrix is organized to have 125mm of space (e) between rows of cells connected in series - incoming dioptre (4) is a printed solar glass 96mm heat-treated silicate hardener on 1.5mm thickness 2.5mm solar spear - the matrix (2) formed is encapsulated by its front side subjected to direct solar radiation by a liquid silicone encapsulant (5) UV transparent laminated by a liquid lamination - the outgoing diopter (7) is a 2mm thick printed solar glass of hardening quenching silicate having two cutouts by polishing the edge of the glass for extracting the polarity cables from the matrix (2) on which is positioned the reflective strips constituting the plasmonic filter. the plasmonic filter is an aluminum compound with a thickness of 100 μm, the grooves of which are formed in press in order to form a surface texturing in trenches with a pitch of 20 μm and whose walls form an angle of 60 ° (3). °) and whose interface (3 ") is a layer produced by evaporation of SiOx and silicone resin 15 - the reflective strips with a width of 8 mm are positioned by a robot along the X, Y axes to be placed on the glass in the interval between two rows of the matrix (2) of cells (1) with the textured upper face (3 ") facing the underside of the solar cells and there can be no short circuit since the encapsulant (6) is a liquid silicone with a dynamic viscosity of 30Pa.s. is applied by liquid lamination in order to encapsulate the lower face of the matrix (2) and the plasmonic filter (3) with the outgoing diopter 20 ( 7) Such a dual-purpose photovoltaic optical device The rear plasmon lense has a power of 224 watts for the standard insolation test for only 36 solar cells of 5.06 W, and the shading ratio in proportion to the surface of the device is 45% and allows light to pass through. surface ratio of 55% across the device. This invention allows the realization of an increase in the power of a photovoltaic module fotre transparency by a low density of solar cell matrix by a plasmonic filtration which is not sensitive to photo aging by the combination of integrated materials: the The geometry of the filter is adapted as a function of the spectral response of the solar cell and corresponds to the reflection of wavelengths between 300 and 900 nm: this feature has an economic interest by the cost of silicon thus reducing by 50% the number of solar cells for the surface of the incoming diopter on the one hand and a use of the light spectrum coming out of the outgoing diopter for various applications including the chroma-culture of different types of plants among others. 35 40 45 50 55 60
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1047961A1 (en) * | 1998-01-13 | 2000-11-02 | Minnesota Mining And Manufacturing Company | Retroreflective dichroic reflector |
| GB2449504A (en) * | 2007-05-25 | 2008-11-26 | Renewable Energy Corp Asa | Photovoltaic module with reflective V-grooves |
| DE102008004771A1 (en) * | 2007-09-27 | 2009-04-16 | Leonhard Kurz Stiftung & Co. Kg | Solar cell, particularly flexible solar cell, has light deflecting structure, light guiding structure and front side provided as light incident side and laminar body with one or multiple transparent or semitransparent layers |
| WO2010058585A1 (en) * | 2008-11-19 | 2010-05-27 | 凸版印刷株式会社 | Light reuse sheet, solar battery module, and light source module |
| WO2012061463A2 (en) * | 2010-11-03 | 2012-05-10 | Abengoa Solar Pv Inc. | Luminescent solar concentrator apparatus, method and applications |
| WO2012164814A1 (en) * | 2011-05-27 | 2012-12-06 | 三洋電機株式会社 | Solar cell module |
| US20130298965A1 (en) * | 2012-05-14 | 2013-11-14 | Au Optronics Corporation | Solar module and fabricating method thereof |
-
2015
- 2015-06-24 FR FR1501331A patent/FR3038141B1/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1047961A1 (en) * | 1998-01-13 | 2000-11-02 | Minnesota Mining And Manufacturing Company | Retroreflective dichroic reflector |
| GB2449504A (en) * | 2007-05-25 | 2008-11-26 | Renewable Energy Corp Asa | Photovoltaic module with reflective V-grooves |
| DE102008004771A1 (en) * | 2007-09-27 | 2009-04-16 | Leonhard Kurz Stiftung & Co. Kg | Solar cell, particularly flexible solar cell, has light deflecting structure, light guiding structure and front side provided as light incident side and laminar body with one or multiple transparent or semitransparent layers |
| WO2010058585A1 (en) * | 2008-11-19 | 2010-05-27 | 凸版印刷株式会社 | Light reuse sheet, solar battery module, and light source module |
| WO2012061463A2 (en) * | 2010-11-03 | 2012-05-10 | Abengoa Solar Pv Inc. | Luminescent solar concentrator apparatus, method and applications |
| WO2012164814A1 (en) * | 2011-05-27 | 2012-12-06 | 三洋電機株式会社 | Solar cell module |
| US20130298965A1 (en) * | 2012-05-14 | 2013-11-14 | Au Optronics Corporation | Solar module and fabricating method thereof |
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