FR3038140A1 - PHOTOVOLTAIC OPTICAL DEVICE WITH TRIPLE PLASMON FILTRATION - Google Patents
PHOTOVOLTAIC OPTICAL DEVICE WITH TRIPLE PLASMON FILTRATION Download PDFInfo
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- FR3038140A1 FR3038140A1 FR1501330A FR1501330A FR3038140A1 FR 3038140 A1 FR3038140 A1 FR 3038140A1 FR 1501330 A FR1501330 A FR 1501330A FR 1501330 A FR1501330 A FR 1501330A FR 3038140 A1 FR3038140 A1 FR 3038140A1
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- solar cells
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Dispositif optique photovoltaïque à filtration plasmonique triple caractérisé en ce qu'il comporte : - des rangées de cellules solaires cristallines (1) interconnectées pour former une matrice (2) encapsulée entre un dioptre entrant (4) et sortant (7) dont la distance (e) séparant deux rangées est égale ou inférieure au segment d'une cellule solaire (1) - un filtre plasmonique (3A) collé sur le dioptre entrant (4) et positionné en parallèle d'une rangée de cellules solaires (1) dans l'intervalle (e) séparant les cellules solaires (1) et centré sur l'axe médian entre deux rangées de cellules donc 1/2 de (e) - Deux filtres plasmoniques (3B) collés sur le dioptre sortant (7) et positionnés en parallèle de part et d'autre d'une rangée de cellules solaires (1) dans l'intervalle (e) séparant les cellules solaires (1)Photovoltaic optical device with triple plasmonic filtration characterized in that it comprises: - rows of crystalline solar cells (1) interconnected to form a matrix (2) encapsulated between an incoming (4) and outgoing (7) diopter whose distance ( e) separating two rows is equal to or smaller than the segment of a solar cell (1) - a plasmonic filter (3A) stuck on the incoming diopter (4) and positioned in parallel with a row of solar cells (1) in the interval (e) separating the solar cells (1) and centered on the median axis between two rows of cells so 1/2 of (e) - Two plasmonic filters (3B) glued on the outgoing diopter (7) and positioned in parallel on both sides of a row of solar cells (1) in the gap (e) separating the solar cells (1)
Description
-1 - Dispositif optique photovoltaïque à filtration plasmonique triple Introduction à l'art : La fabrication de module photovoltaïque cristallin requiert le processus suivant : - nettoyage du verre ou positionnement d'un matériau à forte transparence positionnement d'un film encapsulant EVA « Ethylène Vinyle Acétate » qui est en majorité de l'éthylène vinyle acétate sur le verre ou matériau à forte transparence - soudure d'un ruban de cuivre ayant une couche de protection à base d'un alliage à base d'argent, de plomb et d'étain : la température de la soudure n'excède pas 250°C et ne dure pas plus de 3 secondes par cellules solaires ayant des zones en forme de ligne collecteur de courant des métallisations de l'émetteur sur une largeur de 1,5 à 3 millimètres interconnexion de la polarité négative <face avant d'une cellule d'un substrat de type P à la polarité positive 'face arrière d'une cellule d'un substrat de type P` par exemple - disposition en rangée de cellules soudées - interconnexion des rangées pour un montage en série des cellules solaires nécessitant une soudure de chaque ligne de collecteur de courant - positionnement d'un film encapsulant sur la matrice de cellules positionnement d'un film arrière de protection électrique ou d'un verre ou autre matériaux isolant - lamination à des fins d'encapsulation des cellules solaires Cette technique est unilatéralement utilisée mais a des inconvénients : - le matériau encapsulant EVA a une viscosité d'une grande variabilité en fonction de la température ce qui induit une pression mécanique sur l'ensemble du dispositif des cellules solaires interconnectées le matériau encapsulant EVA contenant 1% d'eau libère de l'acide acétique et du peroxyde d'hydrogène en permanence qui se retrouvent piégés dans le module photovoltaïque entrainant des corrosions, des réactions chimiques avec les surfaces des cellules solaires, des réactions chimiques avec la surface intérieure du verre et crée la corrosion du verre par la formation de halogénures qui sont des pièges d'électrons mais aussi avec le polymère utilisé en protection électrique du module - le matériau EVA ayant un indice de réfraction part réelle variant entre 1,49 et 1,47 sur la bande de rayonnement solaire, ce qui correspond une réponse spectrale proche du verre blanc utilisé, à savoir que le verre ait un traitement particulier le matériau EVA étant réticulé à la surface du verre, il est très difficile de séparer par quelques techniques que ce soient le film EVA du verre et le recyclage du verre comportant PEVA rend les matériaux constituant le verre trop pollués et donc rendent le recyclage du module non fonctionnel l'encapsulation de 60 cellules solaires sur silicium monocristallin de wafer de format pseudo carré de 156mm de côté obtenu par la méthode de croissance Czochralski, « CZ » cellule à homojonction et émetteur homogène de 18,6% de rendement entraine les pertes suivantes : à partir d'un ruban interconnectant en série les cellules de 2mm de largeur par 0,2mm d'épaisseur et interconnectant les rangées de cellules thermo-soudées par un ruban de 5 par 0,3mm, les pertes électriques sont de 2,5% les pertes optiques sont de 1% pour un verre avec une couche de silice poreuse d'indice de réfraction variant entre 1,23 et 1,33 pour un verre de transmittance sur le spectre solaire de 93% le module cristallin de ces 60 cellules solaires de 18,6% aura un rendement de 15,85% soit 2,75% et son comportement en température sera très affecté par l'encapsulation la cellule solaire de 18,6% sur silicium CZ d'orientation « 1-0-0 » à émetteur homogène aura un coefficient de variation de sa puissance par rapport à la température d'un facteur négatif de 0,45%/°Kelvin et le module cristallin utilisant l'EVA entre autre aura un coefficient de variation de sa puissance d'un facteur négatif de 0,51%/°K la combinaison des matériaux verres à 93% de transmittance avec PEVA et des cellules à émetteur homogène est compatible mais l'évolution technologique des cellules à homojonction vers des émetteurs sélectifs et des passivations arrières, la réponse spectrale des cellules évoluent grandement rendant la combinaison des matériaux d'un module impropre et non efficiente - le module cristallin silicium se caractérise également par le comportement optique du silicium à savoir un fort coefficient d'absorption dans les ultra-violets « UV » et une quasi transparence aux infrarouges « IR » et le comportement en fonction de la température d'un module cristallin est intimement lié à la capacité de capter la bande solaire spectrale dont les longueurs d'onde de 250 à 1300nm représentant 80% du spectre 3 0 3 8 1 4 0 -2- La présente invention décrit un dispositif intégré optique permettant de filtrer le spectre lumineux par trois composants pour apporter à la jonction de cellule solaire les photons aux longueurs d'onde absorbées et transmettre les longueurs d'onde utiles à des applications sous le panneau photovoltaïque et réfléchir les longueurs d'onde qui ne sont pas utiles à la production photovoltaïque.-1 - Photovoltaic optical device with triple plasmonic filtration Introduction to the art: The manufacture of crystalline photovoltaic module requires the following process: - glass cleaning or positioning of a high transparency material positioning of an EVA encapsulant film "Ethylene Vinyl Acetate "which is predominantly ethylene vinyl acetate on glass or a material with high transparency - a copper ribbon soldered with a protective layer based on a silver, lead and silver alloy tin: the temperature of the solder does not exceed 250 ° C and lasts no more than 3 seconds per solar cell having areas in the form of a current collector line of the metallizations of the emitter over a width of 1.5 to 3 millimeters interconnection of the negative polarity <front face of a cell of a P-type substrate to the positive polarity 'backside of a cell of a P-type substrate, for example - row layout of welded cells - interconnection of rows for series mounting of solar cells requiring soldering of each current collector line - positioning of a film encapsulating on the matrix of cells positioning of a rear electric protection film or a glass or other insulating materials - lamination for the purpose of encapsulation of solar cells This technique is used unilaterally but has drawbacks: - the encapsulating material EVA has a viscosity of great variability as a function of temperature which induces a mechanical pressure on the entire device interconnected solar cells encapsulating material EVA containing 1% water releases acetic acid and hydrogen peroxide permanently trapped in the photovoltaic module causing corrosions, chemical reactions with the surfaces of the solar cells, chemical reactions with the inner surface of glass and creates the corrosion of glass by the formation of halides which are traps of electrons but also with the polymer used in electrical protection of the module - the EVA material having a real refractive index of between 1.49 and 1 , 47 on the solar radiation band, which corresponds to a spectral response close to the white glass used, namely that the glass has a particular treatment the EVA material being crosslinked to the glass surface, it is very difficult to separate by some techniques that it is the EVA film of the glass and the recycling of the glass including PEVA makes the materials constituting the glass too polluted and thus make the recycling of the non functional module the encapsulation of 60 solar cells on monocrystalline silicon wafer of pseudo squared format of 156mm side obtained by the Czochralski growth method, "CZ" homojunction cell and homogeneous transmitter of 18.6% yield leads the following losses: from a ribbon interconnecting in series cells 2mm wide by 0.2mm thick and interconnecting the rows of heat-sealed cells with a ribbon of 5 by 0.3mm, the electrical losses are 2.5% optical losses are 1% for a glass with a porous silica layer of refractive index varying between 1.23 and 1.33 for a glass of transmittance on the solar spectrum of 93% the crystalline module of these 60 solar cells of 18.6% will have a yield of 15.85% or 2.75% and its temperature behavior will be very affected by encapsulation the solar cell of 18.6% on silicon CZ oriented "1 -0-0 "with homogeneous emitter will have a coefficient of variation of its power with respect to the temperature of a negative factor of 0,45% / ° Kelvin and the crystalline modulus using the EVA among others will have a coefficient of variation of its power of a negative factor of 0.51% / ° K the combination of glass materials at 93% transmittance with PEVA and homogeneous transmitter cells is compatible but the technological evolution of homojunction cells towards selective emitters and back passivations, the spectral response of the cells evolve greatly making the combination of the materials of a module unsuitable and not efficient - the silicon crystalline module is also characterized by the optical behavior of the silicon, namely a high absorption coefficient in ultraviolet "UV" and an almost infrared transparency "IR" and the behavior as a function of temperature of a crystalline module is closely related to the ability to capture the spectral solar band whose wavelengths from 250 to 1300 nm representing 80% of the spectrum. The present invention describes an integrated optical device. to filter the light spectrum by three components to bring the solar cell junction photons long Absorbed waveforms and transmit useful wavelengths to applications under the photovoltaic panel and reflect wavelengths that are not useful for photovoltaic production.
5 Description du dispositif optique photovoltaïque à filtration plasmonique triple : Un dispositif optique photovoltaïque à filtration plasmonique triple caractérisé selon les figures 1 et 2 en ce qu'il 10 comporte : - des rangées de cellules solaires cristallines (1) interconnectées pour former une matrice (2) encapsulée entre un dioptre entrant (4) et sortant (7) dont la distance (e) séparant deux rangées est égale ou inférieure au segment d'une cellule solaire (1) - un filtre plasmonique (3A) collé sur le dioptre entrant (4) et positionné en parallèle d'une rangée de 15 cellules solaires (1) dans l'intervalle (e) séparant les cellules solaires (1) et centré sur l'axe médian entre deux rangées de cellules donc '/2 de (e) - Deux filtres plasmoniques (3B) collés sur le dioptre sortant (7) et positionnés en parallèle de part et d'autre d'une rangée de cellules solaires (1) dans l'intervalle (e) séparant les cellules solaires (1) 20 Ce dispositif optique photovoltaïque à filtration plasmonique triple selon la figure n°3 précédente caractérisé en ce que les filtres plasmoniques (3A) et (3B) comportent : - un composé métallique (3') à partir de matériaux conducteurs choisi parmi l'Argent, l'Aluminium, le Silicium, l'Or, le Chrome, le Zinc, le Cuivre, le Nickel, le Cobalt, le Lithium, le Platine des nanotubes 25 de Carbone, de Nitrure de Bore - la surface supérieure du composé métallique (3A) ou (3B) est texturée en tranchées parallèles de forme triangulaire (3") avec une inclinaison des parois de tranchées parallèle s(3°) inférieure à 90° et de largeur de tranchée inférieure ou égale à 50micron caractérisant le pas des sillons formant les parois des tranchées 30 le composé métallique a une face postérieure (3"') enduite d'un matériau encapsulant choisi parmi l'éthylène vinyle acétate, les thermo-plastiques, les silicones, les acryliques Le dispositif optique photovoltaïque à filtration plasmonique triple selon la figure n°2 caractérisé en ce que les 35 filtres plasmoniques (3A) et (3B) aient une longueur égale à la rangée de cellules solaires (1) et constitue une bande réfléchissante. Le dispositif optique photovoltaïque à filtration plasmonique triple selon les figures 2 et 4 caractérisé en ce que 40 la bande réfléchissante constituant le filtre plasmonique (3A) ait une largeur inférieure ou égale à 50mm par unité de bande réfléchissante. Ce dispositif optique photovoltaïque à filtration plasmonique triple selon la figure n°2 caractérisé en ce que la 45 bande réfléchissante constituant le filtre plasmonique (3B) ait une largeur inférieure ou égale à 6Omm par unité de bande réfléchissante. Ce dispositif optique photovoltaïque à filtration plasmonique triple selon les figures 1 et 4 caractérisé en ce que 50 l'espace libre de passage de lumière à travers le dispositif optique photovoltaïque à filtration plasmonique triple soit d'une largeur (e) entre deux rangées de cellules solaires (1) diminué de la largeur de deux bandes réfléchissantes (3B) et d'une largeur de bande réfléchissante (3A) et de la longueur de la rangée de cellules solaires (1). Ce Dispositif optique photovoltaïque à filtration plasmonique triple caractérisé en ce que l'espace libre de passage libre de lumière à travers le dispositif optique photovoltaïque à filtration plasmonique triple ait une largeur minimum de 90mm. 55 60 3038140 -3- Ce dispositif optique photovoltaïque à filtration plasmonique triple selon les figures 1 et 4 caractérisé en ce que le filtre plasmonique (3A) par sa face supérieure texturé (3") soit orientée vers la face supérieure active de cellules solaires (1) et soit encapsulé entre la face supérieure de la matrice (2) de cellules solaires (1) et le dioptre entrant (4) par un matériau encapsulant (5) choisi parmi l'éthylène vinyle acétate, les thermo-plastiques, les 5 silicones, les acryliques. Ce dispositif optique photovoltaïque à filtration plasmonique triple selon les figures 1 et 4 caractérisé en ce que le filtre plasmonique (3B) par sa face supérieure texturé (3") soit orientée vers la face inférieure de cellules 10 solaires (1) et soit encapsulé entre la face inférieure de la matrice (2) de cellules solaires (1) et le dioptre sortant (7) par un matériau encapsulant (6) choisi parmi l'éthylène vinyle acétate, les thermo-plastiques, les silicones, les acryliques.Description of the photovoltaic optical device with triple plasmonic filtration: A photovoltaic optical device with triple plasmonic filtration characterized according to FIGS. 1 and 2 in that it comprises: - rows of crystalline solar cells (1) interconnected to form a matrix ( 2) encapsulated between an incoming (4) and outgoing (7) diopter whose distance (e) separating two rows is equal to or smaller than the segment of a solar cell (1) - a plasmonic filter (3A) stuck on the incoming diopter (4) and positioned in parallel with a row of solar cells (1) in the gap (e) separating the solar cells (1) and centered on the median axis between two rows of cells (2) of e) - Two plasmonic filters (3B) glued on the outgoing diopter (7) and positioned in parallel on either side of a row of solar cells (1) in the interval (e) separating the solar cells (1) ) 20 This optical device photovo triple plasmonic filtration ltaïque according to the previous FIG No. 3 characterized in that the plasmonic filters (3A) and (3B) comprise: - a metal compound (3 ') from conductive materials selected from Silver, Aluminum Silicon, Gold, Chromium, Zinc, Copper, Nickel, Cobalt, Lithium, Platinum Carbon Nanotubes, Boron Nitride - the upper surface of the metal compound (3A) or 3B) is textured in triangular parallel trenches (3 ") with an inclination of the parallel trench walls s (3 °) less than 90 ° and trench width less than or equal to 50 micron characterizing the pitch of the grooves forming the walls of the trenches. the metal compound has a rear face (3 "') coated with an encapsulant material selected from ethylene vinyl acetate, thermoplastics, silicones, acrylics. The photovoltaic optical device with triple plasmonic filtration is 1, characterized in that the plasmonic filters (3A) and (3B) have a length equal to the row of solar cells (1) and constitute a reflective band. The photovoltaic optical device with triple plasmonic filtration according to FIGS. 2 and 4, characterized in that the reflective band constituting the plasmonic filter (3A) has a width of less than or equal to 50 mm per unit of reflective band. This photovoltaic optical device with triple plasmonic filtration according to Figure No. 2 characterized in that the 45 reflecting strip constituting the plasmonic filter (3B) has a width less than or equal to 60mm per unit of reflective band. This photovoltaic optical device with triple plasmonic filtration according to FIGS. 1 and 4, characterized in that the free space for the passage of light through the photovoltaic optical device with triple plasmonic filtration is of a width (e) between two rows of cells. solar cells (1) less the width of two reflective strips (3B) and a reflective bandwidth (3A) and the length of the row of solar cells (1). This photovoltaic optical device with triple plasmonic filtration characterized in that the free space of free passage of light through the photovoltaic optical device with triple plasmonic filtration has a minimum width of 90mm. This photovoltaic optical device with triple plasmonic filtration according to FIGS. 1 and 4, characterized in that the plasmonic filter (3A) by its textured upper face (3 ") is oriented towards the active upper face of solar cells ( 1) and is encapsulated between the upper face of the matrix (2) of solar cells (1) and the incoming diopter (4) by an encapsulating material (5) selected from ethylene vinyl acetate, thermoplastics, This photovoltaic optical device with triple plasmonic filtration according to FIGS. 1 and 4, characterized in that the plasmonic filter (3B) by its textured upper face (3 ") is oriented towards the underside of solar cells (1). ) and is encapsulated between the underside of the matrix (2) of solar cells (1) and the outgoing diopter (7) by an encapsulating material (6) selected from ethylene vinyl acetate, thermoplastics, silicones , acrylics.
15 Le dispositif optique photovoltaïque à filtration plasmonique triple selon la figure n°4 caractérisé en ce que la bande réfléchissante constituant le filtre plasmonique (3A) ait une largeur inférieure ou égale à 8/3 de la largeur de la bande réfléchissante constituant le filtre plasmonique (3B) et que l'axe médian du filtre plasmonique (3A) ait une distance de l'axe médian du filtre plasmonique (3B) inférieure ou égale à 1/3 de (e) distance sépararant deux rangées de cellules (1).The photovoltaic optical device with triple plasmonic filtration according to FIG. 4 characterized in that the reflective band constituting the plasmonic filter (3A) has a width less than or equal to 8/3 of the width of the reflective band constituting the plasmonic filter (3B) and that the median axis of the plasmonic filter (3A) has a distance from the median axis of the plasmonic filter (3B) less than or equal to 1/3 of (e) distance separating two rows of cells (1).
20 Un excemple de construction d'un tel dispositif photovoltaïque se compose de : - une matrice de cellules solaires formée sur silicium monocristallin de type P dont les dimensions du substrat pseudo-carrés sont 156,75x156,75mm pour un rayon de lingot de 205rnm : la cellule solaire a une efficacité de 25 conversion de 20,8% minimum pour une puissance maximale de 5,06Watt, interconnectée par un ruban enrobé colle conductrice d'une résine de silicone et de cuivre et nano-fils de cuivre sans plomb : la matrice (2) est constituée de 6 rangées de cellules solaires la matrice est organisée pour avoir 140mtn d'espace (e) entre les rangées de cellules connectées en série - dioptre entrant (4) est un verre solaire imprimé trempé thermiquement de silicate à transmission de 96% sur le 30 spetre solaire 1.5AM d'épaisseur de 2,6mm sur lequel est positionné les bandes réfléchissantes constituant le filtre plasmonique (3A). - la bande réfléchissante (3A) d'une largeur de 16mm est positionnée par un robot selon les axes X, Y pour être placée sur le verre dans l'intervalle entre deux rangées de la matrice (2) de cellules (1) à 70mm du bord de cellules (1) avec la face supérieure texturée (3") orientée vers la face supérieure des cellules solaires et il ne peut 35 y avoir de court-circuit étant donné que l'encapsulant (6) est un silicone liquide d'une viscosité dynamique de 30Pa.s est appliqué par lamination liquide afin d'encapsuler la face inférieure de la matrice (2) et du filtre plasmonique (3) avec le dioptre entrant (4) - la matrice (2) formée est encapsulée par sa face avant soumis en radiation solaire directe par un encapsulant (5) de silicone liquide transparent aux UV laminé par une lamination liquide 40 - le dioptre sortant (7) est un verre solaire imprimé d'épaisseur de 2mm de silicate à trempe de durcissement ayant deux découpes par polissage du bord du verre pour l'extraction des câbles de polarité de la matrice (2) sur lequel est positionné les bandes réfléchissantes constituant le filtre plasmonique (3B). - le filtre plasmonique (3B) ou (3A) est un composé d'aluminium d'épaisseur de 100micron, dont les sillons sont formés sous presse afin de former une texturation de surface en tranchées d'un pas de 20micron et dont les 45 parois forment un angle de 60° (3°) et dont l'interface (3") est une couche produite par évaporation de SiOx et de résine de silicone - les bandes réfléchissantes (3B) d'une largeur de 8mm sont positionnés par un robot selon les axes X, Y pour être placées sur le verre dans l'intervalle entre deux rangées de la matrice (2) de cellules (1) avec la face supérieure texturée (3") orientée vers la face inférieure des cellules solaires et il ne peut y avoir de court-circuit 50 étant donné que l'encapsulant (6) est un silicone liquide d'une viscosité dynamique de 30Pa.s est appliqué par lamination liquide afin d'encapsuler la face inférieure de la matrice (2) et du filtre plasmonique (3) avec le dioptre sortant (7) Un tel dispositif optique photovoltaïque à double filtre plasmonique arrière a une puissance lors du test 55 d'insolation sous condition standard de 240Watt pour seulement 36 cellules solaires de 5,06W et le ratio d'ombrage en proportion de la surface du dispositif est de 45% et permet un passage de lumière en ratio de surface de 55% à travers le dispositif. Cette invention permet la réalisation d'une augmentation de la puissance d'un module photovoltaïque à fotre 60 transparence par une faible densité de matrice de cellules solaires par une filtration plasmonique qui n'est pas sensible au photo vieillissement par la combinaison des matériaux intégrés : la géométrie du filtre est adaptée en fonction de la réponse spectrale de la cellule solaire et correspond à la réflexion de longueurs d'ondes entre 300 3038140 -4- et 900nm : cette fonctionnalité a un intérêt économique par le coût du silicium diminuant ainsi de 50% le nombre de cellules solaires pour la surface du dioptre entrant d'une part et d'une utilisation du spectre lumineux sortant du dioptre sortant pour diverses applications dont la chroma-culture de différents types de végétaux entre autres. 5 10 15 20 25 30 35 40 45 50 55 60An exemplary construction of such a photovoltaic device consists of: a matrix of solar cells formed on monocrystalline P-type silicon whose dimensions of the pseudo-square substrate are 156.75 × 156.75 mm for an ingot radius of 205 μm: the solar cell has a conversion efficiency of at least 20.8% for a maximum power of 5.06Watt, interconnected by a coated tape conductive glue of a silicone resin and lead-free copper and copper nanowires: the matrix (2) consists of 6 rows of solar cells the array is organized to have 140mtn of space (e) between rows of connected cells in series - incoming diopter (4) is a printed thermally tempered solar glass of transmission silicate 96% on the 2.5mm solar spectrum of 2.6 mm thickness on which is positioned the reflective strips constituting the plasmonic filter (3A). - The reflective strip (3A) with a width of 16mm is positioned by a robot along the X, Y axes to be placed on the glass in the interval between two rows of the matrix (2) of cells (1) to 70mm of the cell edge (1) with the textured upper face (3 ") facing the upper face of the solar cells and there can be no short circuit since the encapsulant (6) is a liquid silicone of a dynamic viscosity of 30Pa.s is applied by liquid lamination in order to encapsulate the underside of the matrix (2) and the plasmonic filter (3) with the incoming diopter (4) - the matrix (2) formed is encapsulated by its front face subjected to direct solar radiation by an encapsulant (5) of UV-transparent liquid silicone laminated by a liquid lamination 40 - the outgoing diopter (7) is a printed 2mm thick solar glass of hardening quenching silicate having two cut-outs by polishing the edge of the glass for extrac polarity cables of the matrix (2) on which is positioned the reflective strips constituting the plasmonic filter (3B). the plasmonic filter (3B) or (3A) is an aluminum compound with a thickness of 100 μm, the grooves of which are formed in a press to form a surface texturing in trenches with a pitch of 20 μm and the 45 walls of which form an angle of 60 ° (3 °) and whose interface (3 ") is a layer produced by evaporation of SiOx and silicone resin - the reflective strips (3B) with a width of 8mm are positioned by a robot along the X, Y axes to be placed on the glass in the interval between two rows of the matrix (2) of cells (1) with the textured upper face (3 ") oriented towards the underside of the solar cells and it does not may be short circuit 50 since the encapsulant (6) is a liquid silicone with a dynamic viscosity of 30Pa.s is applied by liquid lamination in order to encapsulate the underside of the matrix (2) and the plasmonic filter (3) with the outgoing diopter (7) Such a photovoltaic optical device that double rear plasmon filter has a power during the 240 test of standard insolation test 55 for only 36 solar cells of 5.06W and the shading ratio in proportion to the surface of the device is 45% and allows a light passage in surface ratio of 55% through the device. This invention allows the realization of an increase in the power of a photovoltaic module to fotre 60 transparency by a low density of solar cell matrix by a plasmonic filtration which is not sensitive to photo aging by the combination of integrated materials: the geometry of the filter is adapted according to the spectral response of the solar cell and corresponds to the reflection of wavelengths between 300 and 900 nm: this feature has an economic interest by the cost of silicon thus decreasing by 50 % the number of solar cells for the surface of the entering diopter on the one hand and a use of the light spectrum coming out of the outgoing diopter for various applications including the chroma-culture of different types of plants among others. 5 10 15 20 25 30 35 40 45 50 55 60
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