FR3026890B1 - Procede de controle de la fermeture de cavite par depot non conforme d'une couche - Google Patents
Procede de controle de la fermeture de cavite par depot non conforme d'une coucheInfo
- Publication number
- FR3026890B1 FR3026890B1 FR1459507A FR1459507A FR3026890B1 FR 3026890 B1 FR3026890 B1 FR 3026890B1 FR 1459507 A FR1459507 A FR 1459507A FR 1459507 A FR1459507 A FR 1459507A FR 3026890 B1 FR3026890 B1 FR 3026890B1
- Authority
- FR
- France
- Prior art keywords
- cavity
- layer
- controlling closure
- conforming deposition
- conforming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/26—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass heat exchangers or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
- B81C1/00071—Channels
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
- H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2220/00—Closure means, e.g. end caps on header boxes or plugs on conduits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Electroplating Methods And Accessories (AREA)
- Micromachines (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1459507A FR3026890B1 (fr) | 2014-10-03 | 2014-10-03 | Procede de controle de la fermeture de cavite par depot non conforme d'une couche |
US15/514,993 US20170241032A1 (en) | 2014-10-03 | 2015-10-01 | Method for controlling cavity closure by non-conformal deposition of a layer |
EP15771624.2A EP3201120A1 (fr) | 2014-10-03 | 2015-10-01 | Procede de controle de la fermeture de cavite par depot non conforme d'une couche |
PCT/EP2015/072735 WO2016050932A1 (fr) | 2014-10-03 | 2015-10-01 | Procede de controle de la fermeture de cavite par depot non conforme d'une couche |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1459507A FR3026890B1 (fr) | 2014-10-03 | 2014-10-03 | Procede de controle de la fermeture de cavite par depot non conforme d'une couche |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3026890A1 FR3026890A1 (fr) | 2016-04-08 |
FR3026890B1 true FR3026890B1 (fr) | 2017-12-22 |
Family
ID=52474011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1459507A Active FR3026890B1 (fr) | 2014-10-03 | 2014-10-03 | Procede de controle de la fermeture de cavite par depot non conforme d'une couche |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170241032A1 (fr) |
EP (1) | EP3201120A1 (fr) |
FR (1) | FR3026890B1 (fr) |
WO (1) | WO2016050932A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3088999B1 (fr) * | 2018-11-26 | 2020-12-11 | Stiral | Procédé de fabrication d’un échangeur thermique ou d’un caloduc |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3686081A (en) * | 1969-01-31 | 1972-08-22 | Messerschmitt Boelkow Blohm | Method for incorporating strength increasing filler materials in a matrix |
US6031286A (en) * | 1997-02-28 | 2000-02-29 | International Business Machines Corporation | Semiconductor structures containing a micro pipe system therein |
EP1132500A3 (fr) * | 2000-03-08 | 2002-01-23 | Applied Materials, Inc. | Procédé pour le dépôt électrochimique de métal en utilisant de formes d'onde modulées |
US7229909B2 (en) * | 2004-12-09 | 2007-06-12 | International Business Machines Corporation | Integrated circuit chip utilizing dielectric layer having oriented cylindrical voids formed from carbon nanotubes |
US8262916B1 (en) * | 2009-06-30 | 2012-09-11 | Microfabrica Inc. | Enhanced methods for at least partial in situ release of sacrificial material from cavities or channels and/or sealing of etching holes during fabrication of multi-layer microscale or millimeter-scale complex three-dimensional structures |
US9422154B2 (en) * | 2010-11-02 | 2016-08-23 | International Business Machines Corporation | Feedback control of dimensions in nanopore and nanofluidic devices |
-
2014
- 2014-10-03 FR FR1459507A patent/FR3026890B1/fr active Active
-
2015
- 2015-10-01 WO PCT/EP2015/072735 patent/WO2016050932A1/fr active Application Filing
- 2015-10-01 US US15/514,993 patent/US20170241032A1/en not_active Abandoned
- 2015-10-01 EP EP15771624.2A patent/EP3201120A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2016050932A1 (fr) | 2016-04-07 |
EP3201120A1 (fr) | 2017-08-09 |
FR3026890A1 (fr) | 2016-04-08 |
US20170241032A1 (en) | 2017-08-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20160408 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |