FR3011389B1 - Procede de fabrication d'une jonction josephson et jonction josepson associee - Google Patents

Procede de fabrication d'une jonction josephson et jonction josepson associee

Info

Publication number
FR3011389B1
FR3011389B1 FR1302280A FR1302280A FR3011389B1 FR 3011389 B1 FR3011389 B1 FR 3011389B1 FR 1302280 A FR1302280 A FR 1302280A FR 1302280 A FR1302280 A FR 1302280A FR 3011389 B1 FR3011389 B1 FR 3011389B1
Authority
FR
France
Prior art keywords
junction
josepson
manufacturing
manufacturing josephson
josephson junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1302280A
Other languages
English (en)
Other versions
FR3011389A1 (fr
Inventor
Denis Crete
Bruno Marcilhac
Yves Lemaitre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR1302280A priority Critical patent/FR3011389B1/fr
Priority to PCT/EP2014/070905 priority patent/WO2015049224A1/fr
Priority to US15/026,392 priority patent/US10510942B2/en
Priority to EP14777597.7A priority patent/EP3053202B1/fr
Publication of FR3011389A1 publication Critical patent/FR3011389A1/fr
Application granted granted Critical
Publication of FR3011389B1 publication Critical patent/FR3011389B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0688—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
FR1302280A 2013-10-01 2013-10-01 Procede de fabrication d'une jonction josephson et jonction josepson associee Expired - Fee Related FR3011389B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1302280A FR3011389B1 (fr) 2013-10-01 2013-10-01 Procede de fabrication d'une jonction josephson et jonction josepson associee
PCT/EP2014/070905 WO2015049224A1 (fr) 2013-10-01 2014-09-30 Procédé de fabrication d'une jonction josephson et jonction josephson associée
US15/026,392 US10510942B2 (en) 2013-10-01 2014-09-30 Process for manufacturing a Josephson junction and associated Josephson junction
EP14777597.7A EP3053202B1 (fr) 2013-10-01 2014-09-30 Procédé de fabrication d'une jonction josephson et jonction josephson associée

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1302280A FR3011389B1 (fr) 2013-10-01 2013-10-01 Procede de fabrication d'une jonction josephson et jonction josepson associee

Publications (2)

Publication Number Publication Date
FR3011389A1 FR3011389A1 (fr) 2015-04-03
FR3011389B1 true FR3011389B1 (fr) 2015-10-30

Family

ID=50231213

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1302280A Expired - Fee Related FR3011389B1 (fr) 2013-10-01 2013-10-01 Procede de fabrication d'une jonction josephson et jonction josepson associee

Country Status (4)

Country Link
US (1) US10510942B2 (fr)
EP (1) EP3053202B1 (fr)
FR (1) FR3011389B1 (fr)
WO (1) WO2015049224A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11121304B2 (en) * 2019-11-14 2021-09-14 International Business Machines Corporation Junction fabrication method for forming qubits
FR3106935B1 (fr) * 2020-02-05 2022-01-14 Thales Sa Procede de fabrication d'un dispositif electronique comportant au moins une zone supraconductrice et dispositif associe
US12087503B2 (en) 2021-06-11 2024-09-10 SeeQC, Inc. System and method of flux bias for superconducting quantum circuits

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4351712A (en) * 1980-12-10 1982-09-28 International Business Machines Corporation Low energy ion beam oxidation process
JPS5889875A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd ジヨセフソン集積回路
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
JPH0634418B2 (ja) * 1987-09-07 1994-05-02 株式会社半導体エネルギー研究所 超電導素子の作製方法
CA2053549A1 (fr) * 1990-11-15 1992-05-16 John A. Agostinelli Construction d'une cellule de memoire a effet josephson a haute temperature
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
WO1994027329A1 (fr) * 1993-05-14 1994-11-24 The University Of British Columbia Fabrication de dispositifs supraconducteurs a l'oxyde par implantation d'ions d'impurete
US5411937A (en) * 1993-05-17 1995-05-02 Sandia Corporation Josephson junction
JP3278638B2 (ja) * 1998-09-01 2002-04-30 日本電気株式会社 高温超伝導ジョセフソン接合およびその製造方法
JP5601848B2 (ja) * 2010-02-09 2014-10-08 三菱電機株式会社 ＳｉＣ半導体装置の製造方法

Also Published As

Publication number Publication date
US20160233405A1 (en) 2016-08-11
US10510942B2 (en) 2019-12-17
FR3011389A1 (fr) 2015-04-03
WO2015049224A1 (fr) 2015-04-09
EP3053202A1 (fr) 2016-08-10
EP3053202B1 (fr) 2021-10-13

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