FR2994267B1 - Composant semi-conducteur et procede pour determiner l'etat de la matiere semi-conductrice de ce composant - Google Patents

Composant semi-conducteur et procede pour determiner l'etat de la matiere semi-conductrice de ce composant Download PDF

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Publication number
FR2994267B1
FR2994267B1 FR1357556A FR1357556A FR2994267B1 FR 2994267 B1 FR2994267 B1 FR 2994267B1 FR 1357556 A FR1357556 A FR 1357556A FR 1357556 A FR1357556 A FR 1357556A FR 2994267 B1 FR2994267 B1 FR 2994267B1
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Prior art keywords
component
semiconductor
branch
semiconductor material
determining
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FR1357556A
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FR2994267A1 (fr
Inventor
Stefan Noll
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electrochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

Composant semi-conducteur (108) sensible à au moins un composant de fluide. Le composant semi-conducteur (108) comprend, un substrat (110) semi-conducteur, et ayant sur un côté un contact (112), une électrode (114) sur le second côté (110) et isolé de la matière semiconductrice (110) par une couche isolante chimio-sensible (118), un branchement (116) pour mesurer la tension entre ce branchement (116) et le contact de substrat (112). Le branchement (116) est décalé latéralement par rapport à l'électrode (114) sur le second côté du substrat (110) et la matière semi-conductrice est dopée de façon conductrice dans la région du branchement (116).
FR1357556A 2012-08-01 2013-07-31 Composant semi-conducteur et procede pour determiner l'etat de la matiere semi-conductrice de ce composant Active FR2994267B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012213533.2A DE102012213533A1 (de) 2012-08-01 2012-08-01 Halbleiterbauelement und Verfahren zum Bestimmen eines Zustands eines Halbleitermaterials des Halbleiterbauelements

Publications (2)

Publication Number Publication Date
FR2994267A1 FR2994267A1 (fr) 2014-02-07
FR2994267B1 true FR2994267B1 (fr) 2021-03-19

Family

ID=49943967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1357556A Active FR2994267B1 (fr) 2012-08-01 2013-07-31 Composant semi-conducteur et procede pour determiner l'etat de la matiere semi-conductrice de ce composant

Country Status (4)

Country Link
JP (1) JP2014032197A (fr)
CN (1) CN103575787B (fr)
DE (1) DE102012213533A1 (fr)
FR (1) FR2994267B1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63265155A (ja) * 1987-04-23 1988-11-01 Matsushita Electric Works Ltd イオンセンサ
FR2779826B1 (fr) * 1998-06-12 2002-05-31 Europhtal Detecteur d'ozone, de dioxyde d'azote ou de tout autre gaz polluant et son utilisation
CN1225015C (zh) * 2001-03-28 2005-10-26 华邦电子股份有限公司 移动正离子污染的测试装置及方法
DE10118367C2 (de) * 2001-04-12 2003-02-27 Micronas Gmbh Sensor zum Messen einer Gaskonzentration oder Ionenkonzentration
JP4903439B2 (ja) * 2005-05-31 2012-03-28 株式会社東芝 電界効果トランジスタ
JP2007013058A (ja) * 2005-07-04 2007-01-18 Toshiba Corp 半導体装置
EP2295992B1 (fr) * 2009-09-02 2013-07-17 Microdul AG Dispositif pour détecter et mesurer la charge de l'électricité statique
DE102009045475B4 (de) 2009-10-08 2023-06-29 Robert Bosch Gmbh Gassensitive Halbleitervorrichtung sowie deren Verwendung
US20120001646A1 (en) * 2010-06-30 2012-01-05 Life Technologies Corporation Methods and apparatus for testing isfet arrays

Also Published As

Publication number Publication date
DE102012213533A1 (de) 2014-02-06
CN103575787A (zh) 2014-02-12
FR2994267A1 (fr) 2014-02-07
JP2014032197A (ja) 2014-02-20
CN103575787B (zh) 2018-12-14

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