FR2979636A1 - Method for depositing compound semiconductor material on substrate used for manufacturing semiconductor device, involves vaporizing precursor liquid containing gallium chloride, and flowing obtained precursor vapor into reactor - Google Patents

Abstract

A flow rate of precursor liquid (23) from source (22) into vaporizer (27) is controlled, and precursor liquid within vaporizer is vaporized to form precursor vapor (I) which is made to flow to a region proximate a surface of workpiece substrate (16) within reaction chamber (12), and precursor vapor (II) is made to flow separately into reaction chamber. A compound semiconductor material containing element(s) from precursor vapor (I) and element(s) from precursor vapor (II) is deposited on surface of workpiece substrate within reaction chamber. A flow rate of precursor liquid (23) containing gallium chloride, lanthanum chloride and/or aluminum chloride in liquid state from precursor liquid source (22) into vaporizer (27) is metered and controlled, and precursor liquid within vaporizer is vaporized to form precursor vapor (I) which is made to flow to a region proximate a surface of a workpiece substrate (16) within reaction chamber (12), and precursor vapor (II) is made to flow separately into reaction chamber. A compound semiconductor material containing element(s) from the precursor vapor (I) and element(s) from the precursor vapor (II) is deposited on the surface of workpiece substrate within the reaction chamber. An independent claim is included for halide vapor phase epitaxy system.

Description

FIELD OF THE INVENTION [0001] Embodiments of the invention generally relate to systems for depositing materials onto substrates, and methods for making and using such systems. More particularly, the embodiments of the invention relate to methods and systems that can be used to deposit compound semiconductors, such as III-V semiconductors, using chemical vapor deposition (CVD). .

BACKGROUND OF THE INVENTION [0002] Chemical vapor deposition (CVD) is a chemical process that is used to deposit solid materials on substrates, and is commonly used for the fabrication of semiconductor devices. In chemical vapor deposition processes, a substrate is exposed to one or more reactive gases, which react, decompose, or react and decompose so that this results in the deposition of a solid material on the surface of the substrate. substrate. [0003] One particular type of CVD process is referred to in the art as vapor phase epitaxy (VPE). In VPE processes, a substrate is exposed to one or more reactive vapors in a reaction chamber, which react, decompose or react and decompose so that this results in the epitaxial deposition of a solid material on the surface. of the substrate. VPE processes are often used to deposit III-V semiconductors. When one of the reactive vapors in a VPE process comprises a halide vapor, the process may be referred to as a halide vapor phase epitaxy (HVPE) process. [0004] The HVPE processes are used to form III-V semiconductors, such as, for example, gallium nitride (GaN). In such processes, the epitaxial growth of GaN on a substrate results from the vapor phase reaction between gallium chloride (GaCl) and ammonia (NH3) which is carried out in a high temperature reaction chamber between about 500 ° C and about 1000 ° C. NH3 can be supplied from a standard source of NH3 gas. [0005] In some processes, GaC1 vapor is supplied by passing hydrogen chloride gas (HC1) (which may be from a standard source of HC1 gas) over heated liquid gallium (Ga) in order to form GaC1 in situ inside the reaction chamber. The liquid gallium can be heated to a temperature of from about 750 ° C to about 850 ° C. GaC1 and NH3 may be directed to (for example) a surface of a heated substrate, such as a semiconductor wafer. U.S. Patent 6,179,913, issued January 30, 2001 to Solomon et al., Discloses a gas injection system for use in such systems and processes. Other methods and systems have been developed which utilize an external source of a GaC13 precursor, which is directly injected into the reaction chamber. Examples of such methods and systems are described, for example, in the publication of US patent application 2009/0223442 A1, which was published on September 10, 2009 in the name of Arena et al. [0007] The previously known deposition systems use mass flow controllers which measure and control the flow of process gases in gaseous state or steam into the reaction chamber. SUMMARY [0008] In some embodiments, the present disclosure includes methods for depositing compound semiconductors on one or more substrates. For example, such methods may include the steps of measuring and controlling a flow of a precursor liquid from a source of precursor liquid in a vaporizer. The precursor liquid may comprise at least one of GaC13, InCl3 and AlCl3 in the liquid state. The precursor liquid may be vaporized within the vaporizer to form a first precursor vapor. The first precursor vapor may be flowed from the vaporizer to a region near a surface of a workpiece substrate within a reaction chamber. A second precursor vapor may be allowed to flow into the reaction chamber separately from the first precursor vapor. A compound semiconductor may be deposited on the surface of the part substrate within the reaction chamber. The compound semiconductor may comprise at least one element of the first precursor vapor and at least one element of the second precursor vapor. In additional embodiments, the present disclosure includes halide-based vapor phase epitaxy systems that can be used to perform the methods as described herein. For example, a halide vapor phase epitaxy system may include a reaction chamber, a source of at least one precursor liquid, and a vaporizer configured to vaporize the precursor liquid to form a precursor vapor for to be transported to a location near the substrate support structure within the reaction chamber. The precursor liquid may comprise at least one of GaC13, InCl3 and AlCl3 in the liquid state. At least one conduit may provide a fluid path between the precursor fluid source and the vaporizer. The system may further include a device configured to measure a flow of the precursor liquid through the at least one conduit, and a device configured to control the flow of the precursor liquid through the at least one conduit. BRIEF DESCRIPTION OF THE DRAWINGS [0010] FIG. 1A is a diagram illustrating an exemplary embodiment of a deposition system according to the present disclosure and including means for measuring and controlling the flow rate of the precursor substances in a reaction chamber while the precursor substances are in the liquid state; FIG. 1B is a diagram illustrating another exemplary embodiment of a deposit system according to the present description; FIG. 2 is a detached perspective view illustrating elements of an example of a deposition system according to the diagram of FIG. 1A; Figure 3 is a perspective view of a front outer surface of a gas injection device of the deposition system of Figure 2; Fig. 4 is a sectional side view of an internal precursor gas furnace of the deposition system of Fig. 2; FIG. 5 is a top plan view of one of the generally plate-like structures of the internal precursor gas furnace of FIGS. 3 and 4; Figure 6 is a perspective view of an internal precursor gas furnace of the deposition system of Figure 2; and [0017] Fig. 7 is a detached perspective view schematically illustrating another exemplary embodiment of a deposition system which includes an access door remote from a location where the process gases are injected into the reaction chamber, but comprising an external precursor gas injector instead of an internal precursor gas furnace. DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION [0018] The illustrations presented here are not intended to be actual views of any of a particular system, component or device, but are simply idealized representations that are used to describe the embodiments of the present invention. As used herein, the term "III-V semiconductor" means and includes any semiconductor which is composed at least predominantly of one or more members of Group IIIA of the Periodic Table (B, A1). , Ga, In and Ti) and one or more elements of group VA of the periodic table (N, P, As, Sb and Bi). For example, III-V semiconductors include, but are not limited to GaN, GaP, GaAs, InN, InP, InAs, AlN, AlP, AlAs, InGaN, InGaP, InGaNP, and the like. [0020] Improved gas injectors have recently been developed for use in processes and systems that utilize an external source of a GaC13 precursor that is injected into the reaction chamber, such as those disclosed in the publication. US Patent Application Publication No. 2009/0223442 A1. Examples of such gas injectors are described, for example, in US Patent Application No. 61 / 157,112 which was filed on March 3, 2009 in the name of Arena et al. As used herein, the term "gas" includes gases (fluids that have neither an independent form or volume) and vapors (gases that include diffused liquid or suspended solid material), and the terms "Gas" and "steam" are used here as synonyms. Embodiments of the present invention include and utilize deposition systems configured to perform a halide vapor phase epitaxy deposition process in which the flow rate of one or more precursor substances in the reaction chamber is measured and / or controlled in the liquid state before being vaporized to form one or more precursor vapors used in the deposition process. FIG. 1A schematically illustrates an example of such a deposition system 10. The deposition system 10 may comprise a CVD system and may comprise a VPE deposition system (for example a HVPE deposition system). The deposition system 10 comprises a reaction chamber 12, in which a material (for example a semiconductor) can be deposited on a part substrate 16. A substrate support structure (not shown in FIG. 1A) can be deposited inside the reaction chamber 12 to support the part substrate 16 on which the material is to be deposited. The deposition system 10 further comprises a source 22 of a precursor liquid 23. The precursor liquid 23 comprises a substance which comprises elements which must be incorporated in the material to be deposited on the part substrate 16. The source 22 of the liquid precursor 23 may comprise, for example, a container 24 in which the precursor liquid 23 is disposed. By way of non-limiting example, the material to be deposited on the part substrate 16 may comprise a III-V semiconductor, such as one or more of GaN, InN, AlN and their alloys and mixtures. The precursor liquid 23 may then comprise one or more substances comprising at least one group III element such as one or more of GaC13, InCl3 and AlCl3 in the liquid state. The deposition system 10 may comprise sources of other precursor substances (not shown in Figure 1A). For example, the deposition system 10 may comprise a source of a precursor vapor comprising nitrogen (for example ammonia) which is a group V element which together with the group III element can form a nitride III-V on the part substrate 16 inside the reaction chamber 12. As a particular non-limiting embodiment, the precursor liquid 23 may comprise liquid GaC13. GaC13 is a liquid at temperatures between about 83 ° C and about 120 ° C at atmospheric pressure, and may be a liquid at temperatures up to about 150 ° C at higher pressures. Thus, in embodiments where precursor liquid 23 comprises liquid GaC13, one or more heating elements 40 may be used to maintain source 22 of precursor liquid 23 at a temperature of about 83 ° C. at about 150 ° C. As shown in FIG. 1A, the precursor liquid 23 can be pressurized inside the vessel 24 by using a flushing gas to pressurize a volume of space 25 on the precursor liquid 23 to the vessel. In the interior of the container 24. One or more flow control valves 26 may be used to control the flush gas flow into the vessel 24, and therefore to control the precursor liquid pressure 23. [0026] The system deposition apparatus 10 further comprises a vaporizer 27 which is configured to vaporize the precursor liquid 23 to form a precursor vapor to be transported to a location near the workpiece substrate 16 (and the substrate support structure on which the part substrate 16 is disposed) inside the reaction chamber 12. The vaporizer 27 may comprise one or more heating elements used for blowing the precursor liquid 23 within the vaporizer 27 to form a precursor vapor from the precursor liquid 23. Optionally, the vaporizer 27 may also utilize physical means to assist vaporization of the precursor liquid 23 therein of the last. For example, the vaporizer 27 can transmit ultrasonic vibrations to the precursor liquid 23 to improve the vaporization of the precursor liquid 23 within the latter. In the further embodiments, the vaporizer 27 may include an atomizer or fogger configured to disperse the precursor liquid 23 into fine droplets within the vaporizer 27. For example, a source 36 of an atomizing gas may be used for supplying pressurized atomization gas to the vaporizer 27, where it can be used to disperse the precursor liquid 23 into fine droplets. The atomizing gas may comprise a carrier gas, such as helium (He), nitrogen (N2), hydrogen (H2), argon (Ar), etc., which may be inert in some embodiments. By way of example, vaporizers that can be used for vaporizer 27 of the deposition system 10 are commercially available from Brooks Instrument of Hatfield, PA. A conduit 28 provides a fluid passageway between the source 22 of the precursor liquid 23 and the vaporizer 27. One or more valves 29 may be used to selectively allow and limit the flow of the precursor liquid 23 through the conduit. 28. [0029] Referring again to FIG. 1A, the deposition system 10 further comprises a measuring device 30 configured to measure a flow of the precursor liquid 23 through the conduit 28 when the precursor liquid 23 flows between the source 22 and the vaporizer 27, and a flow control device 32 configured to control the flow of the precursor liquid 23 through the conduit 28. The measurement device 30 and the flow control device 32 may comprise electromechanical devices which are actuated under the control of a computer control system 34. For example, the computer control system 34 can be configured to let go pouring the precursor liquid 23 through the conduit 28 in a desirable range to provide a desired mass flow of the precursor substance into the reaction chamber 12. The computer control system 34 can measure the flow of the precursor liquid 23 through the conduct 28 using the measuring device 30, and in response to the measurements received from the measuring device 30, selectively adjust the flow rate of the precursor liquid 23 through the conduit 28 in response to the received measurements, if necessary to maintain the flow rate in the range desired. In some embodiments, the measuring device 30 and the flow control device 32 may be integrated into a single unitary device. In the other embodiments, the measuring device 30 and the flow control device 32 may be separate devices that are separated from each other. By way of example, the measuring devices and flow control devices that can be used for the measuring device 30 and the flow control device 32 are commercially distributed by Brooks Instrument of Hatfield, PA. The precursor liquid 23 may be at a temperature between about 83 ° C and about 150 ° C when it enters the vaporizer 27. The vaporizer 27 vaporizes the precursor liquid 23 to form a precursor vapor, such as previously discussed. The precursor vapor may be at a temperature of from about 120 ° C to about 900 ° C when the precursor vapor exits the vaporizer 27. In some embodiments, the precursor vapor may be at least about 150 ° C. when it leaves the vaporizer 27, at least about 400 ° C when it leaves the vaporizer 27, or even as high as about 900 ° C when it leaves the vaporizer 27.

In some embodiments, a precursor gas furnace may be used to further heat the precursor vapor after it is taken out of the vaporizer 27 and before reaching the part substrate 16, as discussed in more detail below .  Additional heating elements (not shown) may be used to heat one or more sections of the conduit 28 between the source 22 of the precursor liquid 23 and the vaporizer 27, in order to maintain the temperature of the precursor liquid 23 between about 83 ° C. and about 150 ° C until it reaches the vaporizer 27.  In addition, it may be desirable to avoid temperature drops in the precursor liquid 23, when the precursor liquid 23 flows from the source 22 to the vaporizer 27.  Thus, the heating elements may be provided along the conduit 28 in order to increase the temperature of the precursor liquid 23 (in a progressive, continuous or stepwise manner) when the precursor liquid 23 flows from the source 22 to the vaporizer 27 .  As shown in FIG. 1A, in some embodiments, the vaporizer 27 may be disposed outside the reaction chamber 12.  In the other embodiments, however, the vaporizer 27 may be disposed at least partially within the reaction chamber 12.  For example, Figure 1B illustrates another deposition system 50 that is substantially similar to the deposition system 10 of Figure 1A, but wherein the vaporizer 27 is partially disposed within the reaction chamber 12.  In still other embodiments, the vaporizer 27 may be disposed entirely within the reaction chamber 12.  In embodiments in which the vaporizer 27 may be disposed at least partially within the reaction chamber 12, the vaporizer 27 may be made from materials that can withstand temperatures and indoor chemical environments. of the reaction chamber 12.  Figure 2 is a detached perspective view illustrating elements of an example of a deposition system 100 according to the diagram of Figure 1A.  The deposition system 100 comprises a reaction chamber 102.  The reaction chamber 102 may be defined by an upper wall 104, a bottom wall 106 and one or more side walls.  One or more of the sidewalls may be defined by a component or subassembly components of the deposition system 100.  For example, a first side wall 108A may comprise a component of a gas injection manifold 110 used to inject one or more process gases into the reaction chamber 102, and a second side wall 108B may comprise a component of an evacuation and loading subassembly 112 used for evacuating the process gases from the reaction chamber 102, as well as for charging the substrates into the reaction chamber 102 and discharging the substrates from the reaction chamber 102.  In some embodiments, the reaction chamber 102 may have the geometric shape of an elongated rectangular prism, as shown in FIG. 2.  In some of these embodiments, the gas injection manifold 110 may be positioned at a first end of the reaction chamber 102, and the evacuation and loading subassembly 112 may be positioned at level of an opposite second end of the reaction chamber 102.  In other embodiments, the reaction chamber 102 may have another geometric shape.  The deposition system 100 comprises a substrate support structure 114 (for example a susceptor) configured to support one or more workpiece substrates 116 on which it is desired to deposit or bring a semiconductor inside the substrate. deposit system 100.  For example, part substrates 116 may comprise dies or platelets.  The deposition system 100 further comprises heating elements 118 which can be used to selectively heat the reaction chamber 102 so that an average temperature inside the reaction chamber 102 can be controlled within the temperature limits. High desirable during the deposition processes.  The heating elements 118 may comprise, for example, resistive heating elements or radiant heating elements (for example, heat lamps).  As shown in FIG. 2, the substrate support structure 114 may be coupled to a rod 119, which may be coupled (eg, directly structural coupled, magnetically coupled, etc.). ) to a driving device (not shown), such as an electric motor which is configured to cause rotation of the rod 119 and therefore of the substrate support structure 114 within the reaction chamber 102.  In some embodiments, one or more of the top wall 104, the bottom wall 106, the substrate support structure 114, the rod 119, or any other component within the reaction chamber. 102 may be at least substantially composed of a refractory ceramic material such as ceramic oxide (for example silica (quartz), alumina, zirconia, etc. ), a carbide (eg silicon carbide, boron carbide, etc.) ) or a nitride (for example silicon nitride, boron nitride, etc. ).  By way of nonlimiting example, the upper wall 104, the lower wall 106, the substrate support structure 114 and the rod 119 may comprise transparent quartz in order to allow the thermal energy radiated by the heating elements 118 to pass through. and heating the process gases within the reaction chamber 102.  The deposition system 100 further comprises a gas flow system used to allow the process gases to flow through the reaction chamber 102, such as the precursor vapor generated by the vaporizer 27 (Fig. 1A). ).  For example, the deposition system 100 may comprise at least one gas injection manifold 110 for injecting one or more process gases into the reaction chamber 102 at a first location 103A, and a vacuum device 113 for aspirating the one or a plurality of process gases through the reaction chamber 102 of the first location 103A at a second location 103B and for discharging the one or more process gases from the reaction chamber 102 at the second location 103B.  The gas injection manifold 110 may comprise connectors configured to couple with conduits carrying one or more process gases.  Again with reference to Figure 2, the deposition system 100 may include five 120A-120E gas inlet conduits which carry the gases of the respective process gas sources 122A-122E to the injection manifold of gas 110.  One of the gas inlet conduits 120A-120E may comprise the conduit 28 of FIG. 1A and one of the gas sources 122A-122E may comprise the source 22 of the precursor liquid 23 and the vaporizer 27 of FIG. 1A. .  Optionally, gas valves (121A-121E) may be used to selectively control the flow of gas through the gas inlet conduits 120A-120E respectively.  As described herein, the flow of the precursor gas vapor (for example GaC13) in the reaction chamber 102 can be controlled by measuring and controlling the flow rate of the precursor liquid 23 while it is in the liquid state. , before vaporizing the precursor liquid 23 to form the precursor vapor flowing in the reaction chamber 102, which may provide certain advantages over previously known systems in which the flow of the precursor gas vapor (eg example GaC13) in the reaction chamber 102 was monitored by measuring and controlling the precursor vapor itself.  In further embodiments, the deposition system 100 may comprise less than five gas inlet ducts (e.g. from one to four) and respective gas sources, or the deposition system 100 may comprise more than five (eg six, seven, eight, etc.) ) gas inlet ducts and respective gas sources.  Figure 3 is a perspective view illustrating an outer surface of the gas injection manifold 110.  As shown in FIG. 3, the gas injection manifold 110 may include a plurality of connectors 117 that are configured to connect to the gas inlet conduits 120A-120E (FIG. 2).  In some embodiments, the gas injection manifold 110 may include a plurality of rows 115A-115E of connectors 117.  Each of the rows 115A-115E may be configured to inject respective process gases into the reaction chamber 102 (Fig. 2).  For example, the connectors 117 in a first lower row 115A may be used to inject a purge gas into the reaction chamber 102, the connectors 117 in a second row 115B may be used to inject a precursor gas (eg GaC13) into the reaction chamber 102, the connectors 115 in a third row 115C can be used to inject another precursor gas (eg NH3) into the reaction chamber 102, the connectors 117 in a fourth row 115D can be used to inject another processing gas (eg SiH4) in the reaction chamber 102 and the connectors 117 in a fifth upper row 115E can be used to inject a purge gas or a carrier gas (eg N2) into the reaction chamber 102.  The connectors 117 may be grouped into separate areas 119A-119C of connectors 117, each area 119A-119C including connectors 117 of each of the rows 115A-115E.  The connectors 117 in each zone 119A-119C can be used to transport the process gases to the various zones within the reaction chamber 102, thus allowing the different compositions and / or concentrations of process gas to be introduced into different regions within the reaction chamber 102 on the workpiece substrate 116.  [0044] With reference again to FIG. 2, the evacuation and loading subassembly 112 may comprise a vacuum chamber 184 in which the gases flowing through the reaction chamber 102 are sucked by the vacuum. and discharged from the reaction chamber 102.  The vacuum inside the vacuum chamber 184 is generated by the vacuum device 113.  As shown in FIG. 2, the vacuum chamber 184 can be positioned below the reaction chamber 102.  [0045] The evacuation and loading subassembly 112 may further include a purge gas curtain device 186 which is configured and oriented to provide a generally planar curtain of flowing purge gas flowing through. of the purge gas curtain device 186 and into the vacuum chamber 184.  The evacuation and loading subassembly 112 may also include an access door 188 that can be selectively opened to load and / or unload the workpiece substrates 116 from the substrate support structure 114 and selectively closed to process the part substrates 116 using the deposition system 100.  In some embodiments, the access door 188 may include at least one plate configured to move between a first closed position and a second open position.  The reaction chamber 102 may be at least substantially closed and access to the substrate support structure 114 through the access door 188 may be prevented, when the access door plate 188 is in the first position. closed.  Access to the substrate support structure 114 may be enabled by the access door 188 when the access door plate 188 is in the second open position.  The purge gas curtain emitted by the purge gas curtain device 186 may reduce or prevent unwanted deposition (eg spurious deposition) on the access door plate 188.  The gaseous byproducts, the carrier gases and all the excess precursor gases can be discharged from the reaction chamber 102 through the evacuation and loading subassembly 112.  The access door 188 may be positioned at a distance from the first location 103A at which one or more treatment gases are injected into the reaction chamber 102.  In some embodiments, the first location 103A may be disposed on a first side of the substrate support structure 114 and the second location 103B where the process gases are discharged from the reaction chamber 102 by the vacuum device 113. may be disposed on a second opposite side of the support structure 114, as shown in FIG.  In addition, the second location 103B at which the process gases are discharged from the reaction chamber 102 may be disposed between the substrate support structure 114 and the access door 188.  The purge gas curtain device 186 may be configured to form a curtain of flowing purge gas flowing between the purge gas injection device and the vacuum device 113 as previously discussed.  The flow purge gas curtain may be disposed between the workpiece support structure 114 and the access door 188, to form a flow purge gas barrier which separates the workpiece substrates 116 from the work door. access 188.  Such a purge gas barrier in flow can reduce or prevent spurious deposition on access door 188 when access door 188 is closed.  As previously mentioned, in some embodiments, the deposition system 100 may comprise a precursor gas oven 130 configured to increase the temperature of a precursor gas, such as a precursor gas generated by the vaporizer 27 (FIG. 1A).  In some embodiments, the gas oven 130 may be disposed within the reaction chamber 102.  The precursor gas furnace 130 may be configured to heat the precursor gas to transport the precursor gas within the reaction chamber 102, the gas injection manifold 110 to a location proximate to the substrate support structure 114.  Figure 4 is a sectional side view of the precursor gas oven 130 of Figure 2.  Furnace 130 of the embodiment of Figure 4 comprises five (5) generally plate-like structures 132A-132E which are secured together and are sized and configured to define one or more precursor gas flow paths extending through furnace 130 in chambers defined between generally plate-shaped structures 132A-132E.  The generally plate-like structures 132A-132E may comprise, for example, transparent quartz in order to allow the thermal energy radiated by the heating elements 118 (FIG. 2) to pass through the shaped structures of the 132A-132E plate and heat the gas or precursor gases in the oven 130.  As shown in FIG. 4, the first plate-like structure 132A and the second plate-like structure 132B may be coupled together to define a chamber 134 therebetween.  A plurality of integral ridge projections 136 on the first plate-like structure 132A may divide the chamber 134 into one or more flow paths extending from an inlet 138 in the chamber 134 to an output 140 of the chamber 134.  FIG. 5 is a top plan view of the first plate-like structure 132A and illustrates the peak-shaped projections 136 thereon and the flow paths which are thus defined in the chamber 134 (FIG. Figure 4).  As shown in Fig. 5, the projections 136 define sections of the flow path 20 extending through the furnace 130 (Fig. 4) that have a serpentine configuration.  The projections 136 may comprise alternating walls having apertures 139 therethrough at the lateral ends of the projections 136 and at the center of the projections 136, as shown in FIG.  Thus, in this configuration, the gases can enter the chamber 134 near a central region of the chamber 134, as shown in FIG. 5, flow laterally outward to the side sides of the oven 130, through the openings 138 at the lateral ends of one of the projections 136, return to the central region of the chamber 134 and pass through another opening 138 in the center of another projection 136.  This flow pattern is repeated until the gases reach an opposite side of the first plate-like structure 132A from the inlet 138 after having passed through the chamber 134 while back and forth in the manner of a coil.  By causing one or more precursor gases to flow through this section of the flow path extending through the furnace 130, the residence time of one or more precursor gases within the furnace 130 can be selectively increased.  Referring again to Figure 4, the inlet 138 leading into the chamber 134 may be defined for example by a tubular member 142.  One of the gas inlet conduits 120A-120E, such as the gas inlet conduit 120A, may extend to and couple with the tubular member 142, as shown in FIG.  A seal member 144, such as a polymeric O-ring, may be used to form a gas-tight seal between the gas inlet conduit 120B and the tubular member 142.  The tubular element 142 may include, for example, opaque quartz to prevent the heat energy emitted by the heating elements 118 from heating the seal member 144 to elevated temperatures which could cause degradation of the heat sink. sealing member 144.  In addition, the cooling of the gas injection manifold 110 (FIG. 2) using the flow of cooling fluid through the cooling ducts 111 can prevent excessive heating and result in degradation of the gasket member. sealing 144.  By maintaining the temperature of the seal member 144 below about 200 ° C, a suitable seal can be maintained between one of the gas inlet conduits 120A-120E and the tubular member 142 using the seal member 144 when the gas inlet conduit (e.g. gas inlet conduit 120A) comprises a metal or metal alloy (e.g. steel) and that the tubular member 142 comprises a refractory material such as quartz.  The tubular member 142 and the first plate-like structure 132A may be connected together to form a unitary integral quartz body.  As shown in FIG. 4, the plate-like structures 132A, 132B may comprise complementary sealing characteristics 147A, 147B (for example a peak and a corresponding recess) which extend around the periphery of the plate-like structures 132A, 132B and at least substantially sealing the chamber 134 between the plate-like structures 132A, 132B.  Thus, the gases within chamber 134 are prevented from flowing laterally from chamber 134, and are forced to flow from chamber 134 through an outlet 140 of chamber 134.  [0056] Optionally, the projections 136 may be configured to have a height that is slightly less than a distance between a surface 152 of the first plate-like structure 132A from which the projections 136 extend and an opposing surface. 154 of the second plate-like structure 132B.  Thus, there may be a small gap between the projections 136 and the surface 154 of the second plate-like structure 132B.  Although a minor amount of gas can escape through these spaces, this small amount of leakage will not adversely affect the average residence time of the precursor gas molecules within chamber 140.  By configuring the projections 136 in this manner, the height variations of the protrusions 136 that occur due to the tolerances of the manufacturing processes used to form the plate-like structures 132A, 132B may be taken into account, so that the protrusions 136 which are inadvertently manufactured and which have an excessive height, do not prevent the formation of an adequate seal between the plate-shaped structures 132A, 132B through the complementary sealing characteristics 147A, 147B.  As shown in Figure 4, the outlet 140 of the chamber 134 between the plate-shaped structures 132A, 132B leads to an inlet 148 in a chamber 150 between the third plate-shaped structure 132C and the fourth structure. plate form 132D.  The chamber 150 may be configured such that the gas or gases therein flow from the inlet 148 to an outlet 156 of the chamber 150 in a generally linear manner.  For example, the chamber 150 may have a cross-sectional shape that is generally rectangular and size-wise between the entrance 148 and the outlet 156.  Thus, the chamber 150 may be configured to make the gas or gas flow more laminar as opposed to the turbulent flow.  The plate-like structures 132C, 132D may comprise complementary sealing characteristics 158A, 158B (for example a peak and a corresponding recess) which extend around the periphery of the plate-shaped structures 132C, 132D and at least substantially hermetically close the chamber 150 between the plate-like structures 132C, 132D.  Thus, the gases inside the chamber 150 are prevented from flowing out laterally from the chamber 150 and are forced to flow from the chamber 150 through the outlet 156.  The outlet 156 may comprise, for example, an elongated opening (eg a slot) extending through the plate-like structure 132D near its opposite end relative to the end which is in the vicinity of the entrance 148.  Again with reference to Figure 4, the outlet 156 of the chamber 150 between the plate-shaped structures 132C, 132D leads to an inlet 160 in a chamber 162 between the fourth plate-shaped structure 132D and the fifth plate-shaped structure 132E.  The chamber 162 may be configured such that the gas or gases therein flow through the inlet 160 to an outlet 164 of the chamber 162 in a generally linear manner.  For example, the chamber 162 may have a transverse shape that is generally rectangular or size-uniform between the inlet 160 and the outlet 164.  Thus, the chamber 162 may be configured to make the gas or gas flow more laminar, as opposed to the turbulent flow, in a manner similar to that previously described with reference to the chamber 150.  The plate-like structures 132D, 132E may comprise complementary sealing characteristics 166A, 166B (for example a peak and a corresponding recess) which extend around a portion of the periphery of the shaped structures. Plate 132D, 132E and seal the chamber 162 between the plate-like structures 132D, 132E all but one side of the plate-like structures 132D, 132E.  A space is provided between the plate-like structures 132D, 132E on its side opposite the inlet 160, which space defines the outlet 164 of the chamber 162.  Thus, the gases enter the chamber 162 through the inlet 160, flow through the chamber 162 to the outlet 164 (while preventing them from flowing out laterally of the chamber 162 by the additional sealing characteristics 166A, 166B), and flow out of the chamber 162 through the outlet 164.  The sections of the gas flow path (s) within the furnace 130 that are defined by the chamber 150 and the chamber 162 are configured to communicate the laminar flow to the one or more precursor gases that are to flow through. through the flow path (s) inside the furnace 130 and reduce any turbulence inside the furnace 130.  The output 164 is configured to output one or more precursor gases from the oven 130 into the inner region within the reaction chamber 102.  Figure 6 is a perspective view of the oven 130 and illustrates the outlet 164.  As shown in Fig. 6, the outlet 164 may have a rectangular cross-section that may help prevent the laminar flow of gas or precursor gases that are injected out of the furnace 130 and into the interior region within the chamber of reaction 102.  Outlet 164 may be sized and configured to output a volume of flow precursor gas in a transverse direction on an upper surface 168 of substrate support structure 114.  As shown in FIG. 6, the end surface 180 of the generally plate-like fourth structure 132D and the end surface 182 of the generally plate-like fifth structure 132E, a space between which the output 164 is defined. of the chamber 162 as previously discussed, may have a shape that generally corresponds to a shape of a workpiece substrate 116 supported on the substrate support structure 114 and on which a material is to be disposed using the precursor gas (s). flowing from the oven 130.  For example, in embodiments in which the workpiece substrate 116 comprises a die or wafer having a periphery that is generally circular in shape, the surfaces 180, 182 may have an arcuate shape that generally corresponds to the profile of the outer periphery of the workpiece. Part substrate 116 to be treated.  In such a configuration, the distance between the output 164 and the outer edge of the workpiece substrate 116 may be generally constant at the output 164.  In this configuration, the outgoing precursor gas (s) are prevented from flowing through the outlet 164 from mixing with the other precursor gases within the reaction chamber 102 (FIG. are positioned near the surface of the workpiece substrate 116 on which the material is to be deposited by the precursor gases, and prevent inadvertent deposition of the material on the components of the deposition system 100.  Again with reference to Figure 2, the deposition system 100 may include heating elements 118.  For example, the heating elements 118 may comprise a first group 170 of heating elements 118 and a second group 172 of heating elements 118.  The first group 170 of heating elements 118 may be positioned and configured to transmit thermal energy to the furnace 130 and heat the precursor gas therein.  For example, the first group 170 of heating elements 118 may be positioned below the reaction chamber 102 under the oven 130, as shown in FIG.  In further embodiments, the first group 170 of heating elements 118 may be positioned above the reaction chamber 102 on the oven 130, or may include both heating elements 118 positioned below the chamber. 102 in the oven 130 and heating elements 118 positioned above the reaction chamber 102 on the oven 130.  The second group 172 of heating elements 118 may be positioned and configured to transmit thermal energy to the substrate support structure 114 and any part substrate 116 supported thereon.  For example, the second heater group 172 may be positioned below the reaction chamber 102 under the substrate support structure 114, as shown in FIG.  In further embodiments, the second heater group 172 may be positioned above the reaction chamber 102 on the substrate support structure 114, or may include both heating elements 118 positioned at the below the reaction chamber 102 under the substrate support structure 114 and the heating elements 118 positioned above the reaction chamber 102 on the substrate support structure 114.  The first group 170 of heating elements 118 may be separated from the second group 172 of heating elements 118 by a thermally reflective or thermally insulating barrier 174.  By way of nonlimiting example, such a barrier 174 may comprise a gold-plated metal plate positioned between the first group 170 of heating elements 118 and the second group 172 of heating elements 118.  The metal plate can be oriented to allow independently controlled heating of the oven 130 (by the first heater group 170) 118 and the substrate support structure 114 (by the second heater group 172).  In other words, the barrier 174 can be positioned and oriented to reduce or prevent the heating of the substrate support structure 114 by the first group 170 of heating elements 118 and to reduce or prevent heating of the oven 130 by the second group 172 of heating elements 118.  The first group 170 of heating elements 118 may comprise a plurality of rows of heating elements 118, which can be controlled independently of one another.  In other words, the heat energy transmitted by each row of heating elements 118 may be independently controllable.  The rows may be oriented transverse to the direction of the net flow of gas through the reaction chamber 102, which is the direction extending from left to right from the perspective of FIG.  Thus, independently controlled rows of heating elements 118 may be used to provide a selected thermal gradient on oven 130, if necessary.  Similarly, the second group 172 of heating elements 118 may also include a plurality of rows of heating elements 118, which may be independently controlled from each other.  Thus, a selected thermal gradient can also be provided on the substrate support structure 114, if necessary.  Optionally, passive heat transfer structures (e.g., structures comprising materials that behave similarly to a blackbody) may be positioned adjacent or near at least a portion of the gas furnace. precursor 130 within the reaction chamber 102 to improve heat transfer to the precursor gases within the furnace 130.  Passive heat transfer structures (for example structures comprising materials which behave similarly to a black body) can be provided inside the reaction chamber 102, as described for example in the publication US Patent Application Publication No. 2009/0214785 A1, which was published on August 27, 2009 in the name of Arena et al.  By way of nonlimiting example, the precursor gas oven 130 may comprise a passive heat transfer plate 178, which may be positioned between the second plate-like structure 132B and the third plate-like structure 132C, as shown in Figure 4.  Such a passive heat transfer plate 178 can improve the heat transfer provided by the heating elements 118 to the precursor gas within the oven 130, and can improve the homogeneity and consistency of the temperature inside the oven. 130.  The passive heat transfer plate 178 may comprise a material with high emissivity values (close to unity) (blackbody materials) which is also capable of withstanding the high temperature corrosive environment that is can meet inside the reaction chamber 102.  Such materials may comprise, for example, aluminum nitride (A1N), silicon carbide (SiC) and boron carbide (B4C), which have emissivity values of 0.98, 0.92 and 0, respectively. 92.  Thus, the passive heat transfer plate 178 can absorb the thermal energy emitted by the heating elements 118 and emit the thermal energy back into the oven 130 and the precursor gas or gases inside the oven 130.  FIG. 7 is a detached perspective view diagrammatically illustrating the components of another exemplary embodiment of a deposition system 200 according to the diagram of FIG. 1A.  The deposition system 200 is similar to the deposition system 100 of FIG.  However, the deposition system 200 does not include an internal precursor gas oven 130, but instead includes an external precursor gas injector 230 located outside of the reaction chamber 102.  The external precursor gas injector 230 may be configured to heat at least one precursor gas which may be provided by a vaporizer 27, as previously described with reference to FIG. 1A and carry the at least one precursor gas to a collector. gas injection 210, which may be substantially similar to the gas injection manifold 110 of Figure 2.  By way of non-limiting example, the external precursor gas injector 230 may comprise a precursor gas injector such as that described in any one of the patent application US 61/416525 filed November 23, 2010 and entitled "Processes for forming bulk nitride-III materials on metal nitride growth template layers, and structures formed by such methods", US Patent Application Publication No. 2009/0223442 A1 which was published on September 10, 2009 in the name of Arena and associates, the international application WO 2010/101715 A1, published on September 10, 2010 and entitled "Gas injectors for CVD systems with these", the patent application US 12/894 724 which was filed September 30, 2010 in the name of Bertram, and US patent application 12/895 311 which was filed on September 30, 2010 in the name of Werkhoven.  The gas injector 230 may comprise a thermal gas injector comprising an elongate conduit which may have a helical configuration, a coil configuration, and the like. wherein the one or more process gases flowing therethrough (e.g. a precursor gas) are heated as they flow through the elongate conduit.  External heaters may be used to heat the process gas (s) as they flow through the elongate conduit.  Optionally, one or more passive heating structures (such as those previously described herein) may be incorporated in the gas injector 230 to improve heating of the process gas (s) flowing through the gas injector 230.  [0071] Optionally, the gas injector 230 may further comprise a reservoir configured to contain a liquid reagent to react with a process gas (or a decomposition or reaction product of a process gas).  For example, the reservoir may be configured to contain a liquid metal or other element, such as for example liquid gallium (Ga), liquid aluminum (Al) or liquid indium (In).  In other embodiments of the invention, the reservoir may be configured to contain a solid reagent to react with a process gas (or a decomposition or reaction product of a process gas).  

For example, the reservoir may be configured to contain a solid volume of one or more elements, such as, for example, solid silicon (Si) or solid magnesium (Mg). [0072] Still with reference to FIG. 7, the treatment gas or gases that are injected into the reaction chamber 102 from the external precursor gas injector 230 may be transported through an interior region inside the chamber. the reaction chamber 102 within an enclosure 240 to a location near the work support structure 114, to prevent such treatment gas or gases from mixing with a or other process gases until they are in proximity to a workpiece substrate 116 supported on the substrate support structure 114. In additional embodiments, the depositing systems may comprise both an internal precursor gas oven 130 as described with reference to Figure 2, and an external precursor gas injector 230, as described with reference to Figure 7. For example, the enclosure 240 shown on the figure 7 p replaced by the internal precursor gas oven 130 of FIG. 2. As shown in FIG. 7, the reaction chamber 102 may further comprise structural support ribs 242, which may be used to provide rigidity. This support rib 242 may comprise a refractory material such as that of the top wall 104 and the bottom wall 106 of the reaction chamber 102. The reaction chamber 102 of FIG. include such structural support ribs 242 in additional embodiments. [0075] Although not illustrated in the figures, the deposition systems described herein may also comprise at least one robotic arm device configured to robotically load part substrates 116 into the reaction chamber 102 through the door. Access 188 and unload the part substrates 116 from the reaction chamber 102 through the access door 188. Such robotic arm devices are known in the art. Embodiments of the deposition systems, as described herein, may be used to deposit a semiconductor on a part substrate 116 according to other embodiments of the description. [0077] Again with reference to FIG. 1A, the measuring device 30 and the flow control device 32 may be used to measure and control a flow rate of a precursor liquid 23 from a source 22 of the precursor liquid. 23 in the vaporizer 27. The precursor liquid 23 may be vaporized within the vaporizer 27 to form a first precursor vapor. The first precursor vapor may be flowed from the vaporizer 27 to a region near a surface of a workpiece substrate 16 within the reaction chamber 12. A second precursor vapor may be allowed to flow into the reaction chamber 12 separately from the first precursor vapor, and a compound semiconductor may be deposited on the surface of the workpiece substrate 16 within the reaction chamber 12. The compound semiconductor may comprise at least one element of the first precursor vapor and at least one element of the second precursor vapor. As previously mentioned, in some embodiments, the measuring device 30 may be separate from the flow control device 32. Thus, in some embodiments, the flow rate of the precursor liquid 23 may be measured with the device. 30 and the flow rate of the precursor liquid 23 can be controlled separately with a flow control device 32 separate from the measuring device 30. In other embodiments, the flow rate of the precursor liquid 23 can be measured and monitored. with a single unitary device. A temperature of the precursor liquid 23 can be maintained in a range of about 83 ° C to about 150 ° C between a source 22 of precursor liquid 23 and the vaporizer 27. More particularly, the temperature of the precursor liquid 23 can be maintained. Precursor liquid 23 may be maintained in a range of about 85 ° C to about 120 ° C, or even between about 90 ° C and about 100 ° C between source 22 and vaporizer 27. In addition, as previously mentioned, the precursor liquid 23 may be caused to flow from the source 22 to the vaporizer 27 without decreasing a temperature of the precursor liquid 23. In some embodiments, a temperature of the precursor liquid 23 may be increased when the liquid precursor 23 flows from the source 22 to the vaporizer 27. The precursor liquid 23 may be heated within the vaporizer 27 from a temperature of about 150 ° C or less to about 400 ° C in order to of form a precursor vapor. More particularly, the precursor liquid 23 may be heated within the vaporizer 27 to a temperature of at least about 850 ° C (e.g., about 900 ° C) in some embodiments. Additional non-limiting exemplary embodiments are presented below. Embodiment 1: A method for depositing a compound semiconductor on a substrate, comprising the steps of: measuring and controlling a flow rate of a precursor liquid from a source of precursor liquid in a vaporizer, the precursor liquid is one of GaCl 3, InCl 3 and AlCl 3 vaporizing the vaporizing precursor liquid to form a precursor; let the fluid flow at least in the liquid state; in the first vapor first vapor vapor precursor precursor in a region near a surface of a room substrate inside a reaction chamber; separately flowing a second precursor vapor into the reaction chamber; and depositing a compound semiconductor on the surface of the workpiece substrate within the reaction chamber, the compound semiconductor comprising at least one element of the first precursor vapor and at least one element of the second precursor vapor . Embodiment 2: The method of Embodiment 1, wherein the step of measuring and controlling the flow of the precursor liquid in the vaporizer comprises the steps of measuring the flow rate with a first device and controlling the flow rate with a second device separate from the first device. Embodiment 3: The method of Embodiment 1, wherein the step of measuring and controlling the flow of the precursor liquid in the vaporizer comprises the step of measuring and controlling the flow rate in a single unitary device. Embodiment 4: The method according to any one of embodiments 1 to 3, further comprising the step of maintaining a temperature of the precursor liquid in a range of about 5 degrees of about 83 °. C at about 150 ° C between the liquid source and the vaporizer. Embodiment 5: The method of Embodiment 4, wherein the step of maintaining the temperature of the precursor liquid in a range from about 83 ° C to about 150 ° C between the source liquid and the vaporizer comprises the step of maintaining a precursor liquid temperature in a range from about 85 ° C to about 120 ° C between the liquid source and the vaporizer. Embodiment 6: The method of Embodiment 5, wherein the step of maintaining the temperature of the precursor liquid in a range of from about 85 ° C to about 120 ° C between the source of and the vaporizer comprises the step of maintaining a precursor liquid temperature in a range of from about 90 ° C to about 100 ° C between the liquid source and the vaporizer. Embodiment 7: The method according to any one of embodiments 4 to 6, further comprising the step of allowing the precursor liquid to flow from the liquid source to the vaporizer without doing so. lowering a temperature of the precursor liquid. Embodiment 8: The method of Embodiment 7, wherein the step of flowing the precursor liquid from the liquid source to the vaporizer without lowering the temperature of the precursor liquid comprises a step of increasing a temperature of the precursor liquid as the precursor liquid flows from the liquid source to the vaporizer. Embodiment 9: The method of any one of embodiments 1 to 8, further comprising the step of formulating the precursor liquid to include GaC13. Embodiment 10: The method of any one of embodiments 1 to 9, further comprising the step of formulating the second precursor vapor to include nitrogen. Embodiment 11: The method of Embodiment 10, wherein the step of formulating the second precursor vapor to include nitrogen includes the step of formulating the second vapor precursor to include ammonia. Embodiment 12: The method according to any one of embodiments 1 to 11, wherein the step of depositing the compound semiconductor comprises the step of depositing at least one of gallium nitride, indium nitride and aluminum nitride. Embodiment 13: The method of any one of embodiments 1 to 12, wherein the step of vaporizing the precursor liquid within the vaporizer comprises the step of vaporizing the liquid. precursor within an interior region of the reaction chamber. Embodiment 14: The method according to any one of embodiments 1 to 13, further comprising the step of heating the precursor liquid within the vaporizer at a temperature from about 150 ° C or less to about 400 ° C to form the first precursor vapor. Embodiment 15: The method according to Embodiment 14, further comprising the step of heating the first precursor vapor within the vaporizer to a temperature of at least about 850 ° vs. Embodiment 16: a halide-based vapor phase epitaxy system comprising: a reaction chamber comprising at least one substrate support structure within the reaction chamber; a source of a precursor liquid comprising at least one of GaC13, InC13 and AlC13 in the liquid state; a vaporizer configured to vaporise the precursor liquid to form a precursor vapor to be transported to a location near the substrate support structure within the reaction chamber; at least one conduit providing a fluid pathway between the source of precursor liquid and the vaporizer; a device configured to measure a precursor liquid flow through the at least one conduit; and a device configured to control the flow of the at least one precursor liquid through the at least one conduit. Embodiment 17: The halide-based vapor phase epitaxy system according to Embodiment 16, wherein the device configured to measure the precursor liquid flow through the at least one conduit and the device configured to control the flow of the at least one precursor liquid through the at least one conduit are separated from each other. Embodiment 18: The halide-based vapor phase epitaxy system according to Embodiment 16 or Embodiment 17, further comprising at least one heating element configured to maintain the precursor liquid source at a temperature in a range from about 83 ° C to about 150 ° C. Embodiment 19: The halide vapor phase epitaxy system according to any of embodiments 16 to 18, wherein the vaporizer is disposed outside the reaction chamber. . Embodiment 20: The halide vapor phase epitaxy system according to any of embodiments 16 to 18, wherein the vaporizer is disposed at least partially within the reaction chamber. Embodiment 21: The halide vapor phase epitaxy system according to any one of embodiments 16 to 20, wherein the vaporizer comprises at least one heating element configured to heat the liquid. precursor from a first temperature in the range of about 83 ° C to about 150 ° C to a second temperature of at least about 400 ° C. Embodiment 22: The halide vapor phase epitaxy system of any one of Embodiments 16 to 21, wherein the vaporizer comprises an atomizer configured to disperse the precursor liquid into droplets. . Embodiment 23: The halide-based vapor phase epitaxy system according to any one of embodiments 16 to 22, wherein the precursor liquid source comprising at least one of GaC13, InCl3 and A1C13 in the liquid state comprises liquid GaC13. Embodiment 24: The halide vapor phase epitaxy system according to any of embodiments 16 to 23, further comprising a source of another precursor vapor comprising nitrogen. Embodiment 25: The halide vapor phase epitaxy system according to embodiment 24, wherein the source of another precursor vapor comprising nitrogen comprises a source of ammonia .

Claims (20)

REVENDICATIONS1. A process for depositing a compound semiconductor on a substrate, comprising the steps of: measuring and controlling a flow rate of a precursor liquid from a source of precursor liquid in a vaporizer, the precursor liquid comprising at least one of GaC13, InCl3 and AlCl3 in the liquid state; Vaporizing the precursor liquid within the vaporizer to form a first precursor vapor; flowing the first vaporizer precursor vapor to a region near a surface of the workpiece substrate within a reaction chamber; separately flowing a second precursor vapor into the reaction chamber; and depositing a compound semiconductor on the surface of the workpiece substrate within the reaction chamber, the compound semiconductor comprising at least one element of the first precursor vapor and at least one element of the second vapor of precursor. 25 The method of claim 1, wherein the step of measuring and controlling the flow of the precursor liquid in the vaporizer comprises the step of measuring the flow rate with a first device and controlling the flow rate with a second separate device of the first device. The method of claim 1, wherein the step of measuring and controlling the flow of the precursor liquid in the vaporizer comprises the step of measuring and controlling the flow rate with a single unitary device. The method of claim 1, further comprising the step of maintaining a precursor liquid temperature in a range from about 83 ° C to about 150 ° C between the liquid source and the vaporizer. The method of claim 4, further comprising the step of allowing the precursor liquid to flow from the liquid source to the vaporizer without lowering a temperature of the precursor liquid. The method of claim 1, further comprising the step of formulating the precursor liquid to include GaC13. The method of claim 1, further comprising the step of formulating the second precursor vapor to include nitrogen. The method of claim 7, wherein the step of formulating the second precursor vapor to include nitrogen comprises the step of formulating the second precursor vapor to include ammonia. The method of claim 1, wherein the step of depositing the compound semiconductor comprises the step of depositing at least one of gallium nitride, indium nitride and aluminum nitride. .35 The method of claim 1, further comprising the step of heating the precursor liquid in the vaporizer from a temperature of about 150 ° C or less to at least about 400 ° C to form the first vapor of precursor. The method of claim 10, further comprising the step of heating the first precursor vapor within the vaporizer 10 to a temperature of at least about 850 ° C. A halide vapor phase epitaxy system comprising: a reaction chamber comprising at least one substrate support structure within the reaction chamber; a source of a precursor liquid comprising at least one of GaC13, InC13 and AlC13 in the liquid state; a vaporizer configured to vaporise the precursor liquid to form a precursor vapor to be transported to a location near the substrate support structure within the reaction chamber; at least one conduit providing a fluid passageway between the precursor liquid source and the vaporizer; a device configured to measure a precursor liquid flow through the at least one conduit; and a device configured to control the flow of the at least one precursor liquid through the at least one conduit. The halide vapor phase epitaxy system of claim 12, wherein said device configured to measure precursor liquid flow through the at least one conduit and the device configured to control the flow of the at least one fluid. precursor liquid through the at least one conduit are separated from each other. The halide vapor phase epitaxy system of claim 12, further comprising at least one heating element configured to maintain the source of precursor liquid at a temperature in a range of about 83 ° C. at about 150 ° C. 15. The halide vapor phase epitaxy system of claim 12, wherein the vaporizer is disposed outside the reaction chamber. The halide vapor phase epitaxy system of claim 12, wherein the vaporizer is disposed at least partially within the reaction chamber. The halide vapor phase epitaxy system according to claim 12, wherein the vaporizer comprises at least one heating element configured to heat the precursor liquid from a first temperature in the range of about 83 ° C to about 150 ° C to a second temperature of at least about 400 ° C. 30 The halide vapor phase epitaxy system of claim 12, wherein the vaporizer comprises an atomizer configured to disperse the precursor liquid into droplets. 35 The halide vapor phase epitaxy system of claim 12, wherein the source of precursor liquid comprising at least one of GaC13, InCl3 and AlCl3 in the liquid state comprises liquid GaC13. The halide vapor phase epitaxy system of claim 12, further comprising a source of another precursor vapor comprising nitrogen.