FR2977413B1 - Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree - Google Patents

Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree

Info

Publication number
FR2977413B1
FR2977413B1 FR1102062A FR1102062A FR2977413B1 FR 2977413 B1 FR2977413 B1 FR 2977413B1 FR 1102062 A FR1102062 A FR 1102062A FR 1102062 A FR1102062 A FR 1102062A FR 2977413 B1 FR2977413 B1 FR 2977413B1
Authority
FR
France
Prior art keywords
injection
radiation detector
calibrated quantity
circuit
injection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1102062A
Other languages
English (en)
Other versions
FR2977413A1 (fr
Inventor
Marc Arques
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1102062A priority Critical patent/FR2977413B1/fr
Priority to PCT/EP2012/062189 priority patent/WO2013000849A2/fr
Priority to EP12730909.4A priority patent/EP2726905A2/fr
Priority to JP2014517622A priority patent/JP2014526161A/ja
Priority to US14/129,232 priority patent/US9234969B2/en
Priority to CN201280032512.5A priority patent/CN103874933A/zh
Publication of FR2977413A1 publication Critical patent/FR2977413A1/fr
Application granted granted Critical
Publication of FR2977413B1 publication Critical patent/FR2977413B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • G01T7/005—Details of radiation-measuring instruments calibration techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/18—Measuring radiation intensity with counting-tube arrangements, e.g. with Geiger counters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Measurement Of Radiation (AREA)
FR1102062A 2011-06-30 2011-06-30 Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree Expired - Fee Related FR2977413B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1102062A FR2977413B1 (fr) 2011-06-30 2011-06-30 Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree
PCT/EP2012/062189 WO2013000849A2 (fr) 2011-06-30 2012-06-25 Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree
EP12730909.4A EP2726905A2 (fr) 2011-06-30 2012-06-25 Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree
JP2014517622A JP2014526161A (ja) 2011-06-30 2012-06-25 較正された量のカウンタ電荷を注入する回路を含む放射検出器
US14/129,232 US9234969B2 (en) 2011-06-30 2012-06-25 Radiation detector comprising a circuit for injecting a calibrated quantity of counter-charges
CN201280032512.5A CN103874933A (zh) 2011-06-30 2012-06-25 包括用于注入校准量的反电荷的电路的辐射检测器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1102062A FR2977413B1 (fr) 2011-06-30 2011-06-30 Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree

Publications (2)

Publication Number Publication Date
FR2977413A1 FR2977413A1 (fr) 2013-01-04
FR2977413B1 true FR2977413B1 (fr) 2013-08-09

Family

ID=46420148

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1102062A Expired - Fee Related FR2977413B1 (fr) 2011-06-30 2011-06-30 Detecteur de rayonnement comprenant un circuit d'injection de contre-charges en quantite calibree

Country Status (6)

Country Link
US (1) US9234969B2 (fr)
EP (1) EP2726905A2 (fr)
JP (1) JP2014526161A (fr)
CN (1) CN103874933A (fr)
FR (1) FR2977413B1 (fr)
WO (1) WO2013000849A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3012705B1 (fr) 2013-10-29 2017-06-09 Commissariat Energie Atomique Circuit electronique d'injection de charges pour detecteur de rayonnement
CN104407373B (zh) * 2014-10-29 2017-01-18 中国科学院微电子研究所 辐射探测电路
US10277223B2 (en) * 2016-12-06 2019-04-30 Analog Devices Global Charge injection compensation circuit
US10192911B2 (en) 2017-05-09 2019-01-29 Apple Inc. Hybrid image sensors with improved charge injection efficiency
EP3428588B1 (fr) * 2017-07-10 2019-11-06 ams AG Agencement de capteur optique et procédé de détection de lumière
CN108882447B (zh) * 2018-06-25 2020-09-22 珠海市恒裕英发科技有限公司 一种光控电路
RU2692113C1 (ru) * 2018-08-31 2019-06-21 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Способ калибровки сцинтилляционного детектора излучения
RU2701189C1 (ru) * 2019-01-21 2019-09-25 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Способ определения величины выхода термоядерных нейтронов импульсного источника

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004093318A2 (fr) * 2003-04-11 2004-10-28 Canesta, Inc. Procede et systeme permettant d'ameliorer de maniere differentielle la plage dynamique d'un capteur
EP1836508A1 (fr) * 2005-01-06 2007-09-26 Philips Intellectual Property & Standards GmbH Courant mis en oeuvre par pixel vers convertisseur de frequence
FR2912588B1 (fr) * 2007-02-13 2009-04-10 Commissariat Energie Atomique Detecteur de rayonnement x ou gamma
US7863578B2 (en) * 2007-03-06 2011-01-04 Richard Brenner Detector for radiation therapy
JP4560101B2 (ja) * 2008-03-31 2010-10-13 株式会社日立製作所 放射線計測装置および核医学診断装置
JP5230402B2 (ja) * 2008-12-19 2013-07-10 キヤノン株式会社 撮像装置及び撮像システム

Also Published As

Publication number Publication date
CN103874933A (zh) 2014-06-18
FR2977413A1 (fr) 2013-01-04
JP2014526161A (ja) 2014-10-02
US20150034832A1 (en) 2015-02-05
WO2013000849A3 (fr) 2013-01-31
WO2013000849A2 (fr) 2013-01-03
US9234969B2 (en) 2016-01-12
EP2726905A2 (fr) 2014-05-07

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