FR2962848B1 - Substrat temporaire, procede de transfert et procede de fabrication - Google Patents

Substrat temporaire, procede de transfert et procede de fabrication

Info

Publication number
FR2962848B1
FR2962848B1 FR1055767A FR1055767A FR2962848B1 FR 2962848 B1 FR2962848 B1 FR 2962848B1 FR 1055767 A FR1055767 A FR 1055767A FR 1055767 A FR1055767 A FR 1055767A FR 2962848 B1 FR2962848 B1 FR 2962848B1
Authority
FR
France
Prior art keywords
manufacturing
temporary substrate
transfer
transfer method
temporary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1055767A
Other languages
English (en)
Other versions
FR2962848A1 (fr
Inventor
Gregory Riou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1055767A priority Critical patent/FR2962848B1/fr
Priority to US12/897,409 priority patent/US20120012244A1/en
Priority to US13/174,363 priority patent/US9275888B2/en
Priority to PCT/EP2011/061779 priority patent/WO2012007435A1/fr
Priority to TW100124765A priority patent/TWI518759B/zh
Publication of FR2962848A1 publication Critical patent/FR2962848A1/fr
Application granted granted Critical
Publication of FR2962848B1 publication Critical patent/FR2962848B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/16—Two dimensionally sectional layer
    • Y10T428/163—Next to unitary web or sheet of equal or greater extent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24752—Laterally noncoextensive components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
FR1055767A 2010-07-15 2010-07-15 Substrat temporaire, procede de transfert et procede de fabrication Active FR2962848B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1055767A FR2962848B1 (fr) 2010-07-15 2010-07-15 Substrat temporaire, procede de transfert et procede de fabrication
US12/897,409 US20120012244A1 (en) 2010-07-15 2010-10-04 Temporary substrate, transfer method and production method
US13/174,363 US9275888B2 (en) 2010-07-15 2011-06-30 Temporary substrate, transfer method and production method
PCT/EP2011/061779 WO2012007435A1 (fr) 2010-07-15 2011-07-11 Substrat temporaire, procédé de traitement et procédé de production
TW100124765A TWI518759B (zh) 2010-07-15 2011-07-13 暫時基材、處理方法及生產方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1055767A FR2962848B1 (fr) 2010-07-15 2010-07-15 Substrat temporaire, procede de transfert et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2962848A1 FR2962848A1 (fr) 2012-01-20
FR2962848B1 true FR2962848B1 (fr) 2014-04-25

Family

ID=43567954

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1055767A Active FR2962848B1 (fr) 2010-07-15 2010-07-15 Substrat temporaire, procede de transfert et procede de fabrication

Country Status (4)

Country Link
US (1) US20120012244A1 (fr)
FR (1) FR2962848B1 (fr)
TW (1) TWI518759B (fr)
WO (1) WO2012007435A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201400302D0 (en) * 2014-01-08 2014-02-26 Vodafone Ip Licensing Ltd Telecommunications network

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071809A (en) * 1998-09-25 2000-06-06 Rockwell Semiconductor Systems, Inc. Methods for forming high-performing dual-damascene interconnect structures
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
JP2004039897A (ja) * 2002-07-04 2004-02-05 Toshiba Corp 電子デバイスの接続方法
US7494896B2 (en) * 2003-06-12 2009-02-24 International Business Machines Corporation Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
US6821826B1 (en) * 2003-09-30 2004-11-23 International Business Machines Corporation Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
FR2866982B1 (fr) * 2004-02-27 2008-05-09 Soitec Silicon On Insulator Procede de fabrication de composants electroniques
JP4849993B2 (ja) * 2006-08-14 2012-01-11 日東電工株式会社 粘着シート、その製造方法および積層セラミックシートの切断方法

Also Published As

Publication number Publication date
TW201209899A (en) 2012-03-01
TWI518759B (zh) 2016-01-21
US20120012244A1 (en) 2012-01-19
FR2962848A1 (fr) 2012-01-20
WO2012007435A1 (fr) 2012-01-19

Similar Documents

Publication Publication Date Title
EP2741301A4 (fr) Procédé de fabrication de supraconducteur, supraconducteur et substrat de supraconducteur
BRPI0821371A2 (pt) Dispositivos fotovoltaicos e respectivo método de fabrico
EP2908353A4 (fr) Substrat optique, élément électroluminescent à semi-conducteur et leur procédé de fabrication
FR2943181B1 (fr) Microbatterie au lithium et son procede de fabrication
FR2955942B1 (fr) Magnetometre integre et son procede de fabrication
EP2660891A4 (fr) Substrat pour dispositif organique électroluminescent et son procédé de fabrication
EP2557896A4 (fr) Elément à diodes électroluminescentes organiques, substrat translucide et procédé de fabrication d'un élément à diodes électroluminescentes organiques
EP2551245A4 (fr) Procédé de fabrication de substrat en verre et substrat en verre
FR2973159B1 (fr) Procede de fabrication d'un substrat de base
EP2544254A4 (fr) Substrat pour élément électroluminescent, procédé de fabrication de celui-ci et dispositif électroluminescent
EP2720276A4 (fr) Substrat de cellule solaire, son procédé de fabrication et cellule solaire utilisant celui-ci
EP2728624A4 (fr) Substrat à semi-conducteur, son procédé de fabrication, élément de photopile et photopile
EP2905819A4 (fr) Couche optiquement active, cellule solaire organique comportant une couche optiquement active et procédé de fabrication de celles-ci
EP2781594A4 (fr) Substrat de culture cellulaire et son procédé de fabrication
FR2969500B1 (fr) Longe de securite et son procede de fabrication
EP2538449A4 (fr) Procédé et dispositif permettant de fabriquer des dispositifs à semi-conducteur, dispositif à semi-conducteur et élément de transfert
EP2869329A4 (fr) Transistor à couches minces, substrat de réseau et son procédé de fabrication
FR2990561B1 (fr) Procede de fabrication de dispositif semi-conducteur et dispositif semi-conducteur;
EP2555594A4 (fr) Substrat donneur pour transfert, procédé de fabrication de dispositif et élément électroluminescent organique
FR2922887B1 (fr) Procede ameliore de fabrication de diesters.
EP2577751A4 (fr) Substrat de del, puce de del et leur procédé de fabrication
EP2592632A4 (fr) Substrat à couche mince supraconductrice, couche mince supraconductrice, et procédé de fabrication d'un substrat à couche mince supraconductrice
EP2725645A4 (fr) Substrat de circuit flexible, procédé de fabrication de ce dernier et pile à combustible qui utilise ledit substrat de circuit flexible
EP2530728A4 (fr) Procédé de fabrication d'une couche semiconductrice, procédé de fabrication d'un dispositif de conversion photoélectrique et solution de formation d'une couche semiconductrice
EP2749675A4 (fr) Procédé de fabrication de tranche de semi-conducteur, et tranche de semi-conducteur

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14