FR2962258B1 - Procédé de traitement d'une structure multicouche a l'acide fluorhydrique - Google Patents

Procédé de traitement d'une structure multicouche a l'acide fluorhydrique

Info

Publication number
FR2962258B1
FR2962258B1 FR1057456A FR1057456A FR2962258B1 FR 2962258 B1 FR2962258 B1 FR 2962258B1 FR 1057456 A FR1057456 A FR 1057456A FR 1057456 A FR1057456 A FR 1057456A FR 2962258 B1 FR2962258 B1 FR 2962258B1
Authority
FR
France
Prior art keywords
treating
multilayer structure
fluorhydric acid
fluorhydric
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1057456A
Other languages
English (en)
Other versions
FR2962258A1 (fr
Inventor
Alexandre Vaufredaz
Fleur Guittard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1057456A priority Critical patent/FR2962258B1/fr
Priority to PCT/EP2011/060643 priority patent/WO2012000907A1/fr
Publication of FR2962258A1 publication Critical patent/FR2962258A1/fr
Application granted granted Critical
Publication of FR2962258B1 publication Critical patent/FR2962258B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Element Separation (AREA)
  • Micromachines (AREA)
FR1057456A 2010-06-30 2010-09-17 Procédé de traitement d'une structure multicouche a l'acide fluorhydrique Expired - Fee Related FR2962258B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1057456A FR2962258B1 (fr) 2010-06-30 2010-09-17 Procédé de traitement d'une structure multicouche a l'acide fluorhydrique
PCT/EP2011/060643 WO2012000907A1 (fr) 2010-06-30 2011-06-24 Procédé de traitement d'une structure multicouche avec de l'acide fluorhydrique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1002734A FR2962141A1 (fr) 2010-06-30 2010-06-30 Procédé de désoxydation d'une structure multicouche a l'acide fluorhydrique
FR1057456A FR2962258B1 (fr) 2010-06-30 2010-09-17 Procédé de traitement d'une structure multicouche a l'acide fluorhydrique

Publications (2)

Publication Number Publication Date
FR2962258A1 FR2962258A1 (fr) 2012-01-06
FR2962258B1 true FR2962258B1 (fr) 2012-08-31

Family

ID=42983631

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1002734A Pending FR2962141A1 (fr) 2010-06-30 2010-06-30 Procédé de désoxydation d'une structure multicouche a l'acide fluorhydrique
FR1057456A Expired - Fee Related FR2962258B1 (fr) 2010-06-30 2010-09-17 Procédé de traitement d'une structure multicouche a l'acide fluorhydrique

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1002734A Pending FR2962141A1 (fr) 2010-06-30 2010-06-30 Procédé de désoxydation d'une structure multicouche a l'acide fluorhydrique

Country Status (2)

Country Link
FR (2) FR2962141A1 (fr)
WO (1) WO2012000907A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3635200B2 (ja) * 1998-06-04 2005-04-06 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US7442992B2 (en) * 2004-05-19 2008-10-28 Sumco Corporation Bonded SOI substrate, and method for manufacturing the same
JP5101287B2 (ja) * 2004-09-21 2012-12-19 ソイテック 接合されるべき面の処理を伴う転写方法
US7276430B2 (en) * 2004-12-14 2007-10-02 Electronics And Telecommunications Research Institute Manufacturing method of silicon on insulator wafer
EP2075830A3 (fr) * 2007-10-11 2011-01-19 Sumco Corporation Procédé de production de plaquette fixée
FR2935536B1 (fr) * 2008-09-02 2010-09-24 Soitec Silicon On Insulator Procede de detourage progressif

Also Published As

Publication number Publication date
WO2012000907A1 (fr) 2012-01-05
FR2962258A1 (fr) 2012-01-06
FR2962141A1 (fr) 2012-01-06

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120907

ST Notification of lapse

Effective date: 20140530