FR2959026B1 - LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY - Google Patents
LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRYInfo
- Publication number
- FR2959026B1 FR2959026B1 FR1052862A FR1052862A FR2959026B1 FR 2959026 B1 FR2959026 B1 FR 2959026B1 FR 1052862 A FR1052862 A FR 1052862A FR 1052862 A FR1052862 A FR 1052862A FR 2959026 B1 FR2959026 B1 FR 2959026B1
- Authority
- FR
- France
- Prior art keywords
- rayoned
- energy
- lithography method
- combined optimization
- digital geometry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001459 lithography Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000005457 optimization Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1052862A FR2959026B1 (en) | 2010-04-15 | 2010-04-15 | LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY |
EP11714291A EP2559054A1 (en) | 2010-04-15 | 2011-04-13 | Lithography method with combined optimisation of radiated energy and design geometry |
US13/641,128 US9250540B2 (en) | 2010-04-15 | 2011-04-13 | Lithography method with combined optimization of radiated energy and design geometry |
KR1020127028139A KR101822676B1 (en) | 2010-04-15 | 2011-04-13 | Lithography method with combined optimization of radiated energy and design geometry |
JP2013504272A JP2013527984A (en) | 2010-04-15 | 2011-04-13 | Lithographic method with combined optimization of radiant energy and design shape |
PCT/EP2011/055863 WO2011128393A1 (en) | 2010-04-15 | 2011-04-13 | Lithography method with combined optimisation of radiated energy and design geometry |
JP2017188763A JP6618518B2 (en) | 2010-04-15 | 2017-09-28 | Lithographic method with combined optimization of radiant energy and design shape |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1052862A FR2959026B1 (en) | 2010-04-15 | 2010-04-15 | LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2959026A1 FR2959026A1 (en) | 2011-10-21 |
FR2959026B1 true FR2959026B1 (en) | 2012-06-01 |
Family
ID=43216174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1052862A Active FR2959026B1 (en) | 2010-04-15 | 2010-04-15 | LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY |
Country Status (6)
Country | Link |
---|---|
US (1) | US9250540B2 (en) |
EP (1) | EP2559054A1 (en) |
JP (2) | JP2013527984A (en) |
KR (1) | KR101822676B1 (en) |
FR (1) | FR2959026B1 (en) |
WO (1) | WO2011128393A1 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2959028B1 (en) | 2010-04-15 | 2015-12-25 | Commissariat Energie Atomique | ELECTRONIC LITHOGRAPHY METHOD BY PROJECTING LARGE MESH CELLS |
FR2959029B1 (en) | 2010-04-15 | 2013-09-20 | Commissariat Energie Atomique | ELECTRONIC LITHOGRAPHY METHOD WITH CORRECTION CORRECTION CORRECTION |
FR2959027B1 (en) | 2010-04-15 | 2014-05-16 | Commissariat Energie Atomique | ELECTRONIC LITHOGRAPHY METHOD WITH CORRECTION OF LINES OF LINES BY INSERTION OF CONTRAST PATTERNS |
TWI585511B (en) | 2011-09-13 | 2017-06-01 | 原子能與替代能源委員會 | Method of lithography by radiation of at least one pattern to be irradiated on a resined support and computer program |
FR2989513B1 (en) * | 2012-04-12 | 2015-04-17 | Aselta Nanographics | METHOD FOR CORRECTING ELECTRONIC PROXIMITY EFFECTS USING VOIGT-TYPE DIFFUSION FUNCTIONS |
US8984451B2 (en) | 2013-02-22 | 2015-03-17 | Aselta Nanographics | Free form fracturing method for electronic or optical lithography |
FR3005170B1 (en) | 2013-04-29 | 2017-02-17 | Aselta Nanographics | COMBINED OPTIMIZATION LITHOGRAPHY METHOD OF RADIED ENERGY AND APPLICABLE GEOMETRY IN COMPLEX SHAPES |
US9645510B2 (en) * | 2013-05-20 | 2017-05-09 | Asml Netherlands B.V. | Method of controlling a radiation source and lithographic apparatus comprising the radiation source |
EP2869119A1 (en) | 2013-10-30 | 2015-05-06 | Aselta Nanographics | Free form fracturing method for electronic or optical lithography using resist threshold control |
KR102403574B1 (en) * | 2014-02-21 | 2022-05-30 | 에이에스엠엘 네델란즈 비.브이. | Proximity effect correction in a charged particle lithography system |
EP2952964A1 (en) | 2014-06-03 | 2015-12-09 | Aselta Nanographics | Method for determining the parameters of an ic manufacturing process by a differential procedure |
EP3037878B1 (en) | 2014-12-23 | 2020-09-09 | Aselta Nanographics | Method of applying vertex based corrections to a semiconductor design |
US10410831B2 (en) | 2015-05-12 | 2019-09-10 | Ims Nanofabrication Gmbh | Multi-beam writing using inclined exposure stripes |
US10325756B2 (en) | 2016-06-13 | 2019-06-18 | Ims Nanofabrication Gmbh | Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer |
FR3052910B1 (en) | 2016-06-16 | 2018-06-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR PROJECTING A BEAM OF PARTICLES ON A SUBSTRATE WITH CORRECTION OF BROADCAST EFFECTS |
US10325757B2 (en) | 2017-01-27 | 2019-06-18 | Ims Nanofabrication Gmbh | Advanced dose-level quantization of multibeam-writers |
JP7201364B2 (en) * | 2017-08-25 | 2023-01-10 | アイエムエス ナノファブリケーション ゲーエムベーハー | Dose-related feature reconstruction in exposure patterns exposed in multi-beam writers |
US10522329B2 (en) | 2017-08-25 | 2019-12-31 | Ims Nanofabrication Gmbh | Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus |
US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
US10840054B2 (en) | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
US11556058B2 (en) * | 2018-10-31 | 2023-01-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Proximity effect correction in electron beam lithography |
US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
JP7167842B2 (en) * | 2019-05-08 | 2022-11-09 | 株式会社ニューフレアテクノロジー | Charged particle beam writing method and charged particle beam writing apparatus |
KR20210132599A (en) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | Chargedparticle source |
EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393987A (en) * | 1993-05-28 | 1995-02-28 | Etec Systems, Inc. | Dose modulation and pixel deflection for raster scan lithography |
JP3334441B2 (en) * | 1995-08-01 | 2002-10-15 | ソニー株式会社 | Photomask drawing pattern data correction method and correction device |
US5847959A (en) | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
JP3120051B2 (en) * | 1997-03-18 | 2000-12-25 | 株式会社東芝 | Proximity effect corrector for charged particle beam writing |
DE19818440C2 (en) | 1998-04-24 | 2002-10-24 | Pdf Solutions Gmbh | Method for generating data for the production of a structure defined by design data |
JP2002033263A (en) * | 2000-07-13 | 2002-01-31 | Hitachi Ltd | Method and system for electron beam lithography, and method for fabricating photomask |
JP3874629B2 (en) | 2001-05-22 | 2007-01-31 | 富士通株式会社 | Charged particle beam exposure method |
EP1249734B1 (en) * | 2001-04-11 | 2012-04-18 | Fujitsu Semiconductor Limited | Rectangle/lattice data conversion method for charged particle beam exposure mask pattern and charged particle beam exposure method |
JP3686367B2 (en) * | 2001-11-15 | 2005-08-24 | 株式会社ルネサステクノロジ | Pattern forming method and semiconductor device manufacturing method |
JP2003264140A (en) * | 2002-03-11 | 2003-09-19 | Nikon Corp | Method for approximating eid function in charged particle beam exposure apparatus, method for correcting approximation effect and method for deciding reticle pattern |
JP2005019780A (en) * | 2003-06-27 | 2005-01-20 | Nikon Corp | Method for estimating pattern shape in charged-particle ray exposure transfer, method for determining reticle pattern used for charged-particle ray exposure transfer and method for estimating parameter of proximity effect |
US7407252B2 (en) * | 2004-07-01 | 2008-08-05 | Applied Materials, Inc. | Area based optical proximity correction in raster scan printing |
EP1788445A1 (en) * | 2005-11-18 | 2007-05-23 | Advanced Mask Technology Center GmbH & Co. KG | A method of determining an exposure dose and exposure apparatus |
KR100675301B1 (en) | 2006-01-17 | 2007-01-29 | 삼성전자주식회사 | Methods of forming pattern using electron beam and cell masks used in electron beam lithography |
JP4976071B2 (en) * | 2006-02-21 | 2012-07-18 | 株式会社ニューフレアテクノロジー | Charged particle beam drawing method and charged particle beam drawing apparatus |
JP4814651B2 (en) * | 2006-02-22 | 2011-11-16 | 富士通セミコンダクター株式会社 | Charged particle beam exposure method and program used therefor |
JP5133087B2 (en) * | 2007-02-23 | 2013-01-30 | 株式会社ニューフレアテクノロジー | Manufacturing method of semiconductor device |
JP5217442B2 (en) * | 2008-01-08 | 2013-06-19 | 富士通セミコンダクター株式会社 | Exposure data creation method and exposure method |
-
2010
- 2010-04-15 FR FR1052862A patent/FR2959026B1/en active Active
-
2011
- 2011-04-13 JP JP2013504272A patent/JP2013527984A/en active Pending
- 2011-04-13 EP EP11714291A patent/EP2559054A1/en not_active Ceased
- 2011-04-13 KR KR1020127028139A patent/KR101822676B1/en active IP Right Grant
- 2011-04-13 WO PCT/EP2011/055863 patent/WO2011128393A1/en active Application Filing
- 2011-04-13 US US13/641,128 patent/US9250540B2/en active Active
-
2017
- 2017-09-28 JP JP2017188763A patent/JP6618518B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR2959026A1 (en) | 2011-10-21 |
EP2559054A1 (en) | 2013-02-20 |
US20130201468A1 (en) | 2013-08-08 |
WO2011128393A1 (en) | 2011-10-20 |
US9250540B2 (en) | 2016-02-02 |
KR101822676B1 (en) | 2018-01-26 |
JP2018022912A (en) | 2018-02-08 |
JP6618518B2 (en) | 2019-12-11 |
JP2013527984A (en) | 2013-07-04 |
KR20130073883A (en) | 2013-07-03 |
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