FR2959026B1 - LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY - Google Patents

LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY

Info

Publication number
FR2959026B1
FR2959026B1 FR1052862A FR1052862A FR2959026B1 FR 2959026 B1 FR2959026 B1 FR 2959026B1 FR 1052862 A FR1052862 A FR 1052862A FR 1052862 A FR1052862 A FR 1052862A FR 2959026 B1 FR2959026 B1 FR 2959026B1
Authority
FR
France
Prior art keywords
rayoned
energy
lithography method
combined optimization
digital geometry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1052862A
Other languages
French (fr)
Other versions
FR2959026A1 (en
Inventor
Serdar Manakli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1052862A priority Critical patent/FR2959026B1/en
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP11714291A priority patent/EP2559054A1/en
Priority to US13/641,128 priority patent/US9250540B2/en
Priority to PCT/EP2011/055863 priority patent/WO2011128393A1/en
Priority to JP2013504272A priority patent/JP2013527984A/en
Priority to KR1020127028139A priority patent/KR101822676B1/en
Publication of FR2959026A1 publication Critical patent/FR2959026A1/en
Application granted granted Critical
Publication of FR2959026B1 publication Critical patent/FR2959026B1/en
Priority to JP2017188763A priority patent/JP6618518B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR1052862A 2010-04-15 2010-04-15 LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY Active FR2959026B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1052862A FR2959026B1 (en) 2010-04-15 2010-04-15 LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY
US13/641,128 US9250540B2 (en) 2010-04-15 2011-04-13 Lithography method with combined optimization of radiated energy and design geometry
PCT/EP2011/055863 WO2011128393A1 (en) 2010-04-15 2011-04-13 Lithography method with combined optimisation of radiated energy and design geometry
JP2013504272A JP2013527984A (en) 2010-04-15 2011-04-13 Lithographic method with combined optimization of radiant energy and design shape
EP11714291A EP2559054A1 (en) 2010-04-15 2011-04-13 Lithography method with combined optimisation of radiated energy and design geometry
KR1020127028139A KR101822676B1 (en) 2010-04-15 2011-04-13 Lithography method with combined optimization of radiated energy and design geometry
JP2017188763A JP6618518B2 (en) 2010-04-15 2017-09-28 Lithographic method with combined optimization of radiant energy and design shape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052862A FR2959026B1 (en) 2010-04-15 2010-04-15 LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY

Publications (2)

Publication Number Publication Date
FR2959026A1 FR2959026A1 (en) 2011-10-21
FR2959026B1 true FR2959026B1 (en) 2012-06-01

Family

ID=43216174

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052862A Active FR2959026B1 (en) 2010-04-15 2010-04-15 LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RAYONED ENERGY AND DIGITAL GEOMETRY

Country Status (6)

Country Link
US (1) US9250540B2 (en)
EP (1) EP2559054A1 (en)
JP (2) JP2013527984A (en)
KR (1) KR101822676B1 (en)
FR (1) FR2959026B1 (en)
WO (1) WO2011128393A1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2959028B1 (en) 2010-04-15 2015-12-25 Commissariat Energie Atomique ELECTRONIC LITHOGRAPHY METHOD BY PROJECTING LARGE MESH CELLS
FR2959029B1 (en) 2010-04-15 2013-09-20 Commissariat Energie Atomique ELECTRONIC LITHOGRAPHY METHOD WITH CORRECTION CORRECTION CORRECTION
FR2959027B1 (en) 2010-04-15 2014-05-16 Commissariat Energie Atomique ELECTRONIC LITHOGRAPHY METHOD WITH CORRECTION OF LINES OF LINES BY INSERTION OF CONTRAST PATTERNS
US9223926B2 (en) 2011-09-13 2015-12-29 Aselta Nanographics Method for correcting electronic proximity effects using the deconvolution of the pattern to be exposed by means of a probabilistic method
FR2989513B1 (en) * 2012-04-12 2015-04-17 Aselta Nanographics METHOD FOR CORRECTING ELECTRONIC PROXIMITY EFFECTS USING VOIGT-TYPE DIFFUSION FUNCTIONS
US8984451B2 (en) 2013-02-22 2015-03-17 Aselta Nanographics Free form fracturing method for electronic or optical lithography
FR3005170B1 (en) 2013-04-29 2017-02-17 Aselta Nanographics COMBINED OPTIMIZATION LITHOGRAPHY METHOD OF RADIED ENERGY AND APPLICABLE GEOMETRY IN COMPLEX SHAPES
US9645510B2 (en) * 2013-05-20 2017-05-09 Asml Netherlands B.V. Method of controlling a radiation source and lithographic apparatus comprising the radiation source
EP2869119A1 (en) 2013-10-30 2015-05-06 Aselta Nanographics Free form fracturing method for electronic or optical lithography using resist threshold control
RU2691955C2 (en) * 2014-02-21 2019-06-19 АСМЛ Недерландс Б.В. Correction of proximity effect in system for lithography by beams of charged particles
EP2952964A1 (en) 2014-06-03 2015-12-09 Aselta Nanographics Method for determining the parameters of an ic manufacturing process by a differential procedure
EP3037878B1 (en) 2014-12-23 2020-09-09 Aselta Nanographics Method of applying vertex based corrections to a semiconductor design
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
FR3052910B1 (en) * 2016-06-16 2018-06-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR PROJECTING A BEAM OF PARTICLES ON A SUBSTRATE WITH CORRECTION OF BROADCAST EFFECTS
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
JP7201364B2 (en) * 2017-08-25 2023-01-10 アイエムエス ナノファブリケーション ゲーエムベーハー Dose-related feature reconstruction in exposure patterns exposed in multi-beam writers
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11556058B2 (en) * 2018-10-31 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Proximity effect correction in electron beam lithography
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
JP7167842B2 (en) * 2019-05-08 2022-11-09 株式会社ニューフレアテクノロジー Charged particle beam writing method and charged particle beam writing apparatus
KR20210132599A (en) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 Charged­particle source

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
JP3334441B2 (en) * 1995-08-01 2002-10-15 ソニー株式会社 Photomask drawing pattern data correction method and correction device
US5847959A (en) 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
JP3120051B2 (en) * 1997-03-18 2000-12-25 株式会社東芝 Proximity effect corrector for charged particle beam writing
DE19818440C2 (en) 1998-04-24 2002-10-24 Pdf Solutions Gmbh Method for generating data for the production of a structure defined by design data
JP2002033263A (en) * 2000-07-13 2002-01-31 Hitachi Ltd Method and system for electron beam lithography, and method for fabricating photomask
EP1249734B1 (en) * 2001-04-11 2012-04-18 Fujitsu Semiconductor Limited Rectangle/lattice data conversion method for charged particle beam exposure mask pattern and charged particle beam exposure method
JP3874629B2 (en) 2001-05-22 2007-01-31 富士通株式会社 Charged particle beam exposure method
JP3686367B2 (en) * 2001-11-15 2005-08-24 株式会社ルネサステクノロジ Pattern forming method and semiconductor device manufacturing method
JP2003264140A (en) * 2002-03-11 2003-09-19 Nikon Corp Method for approximating eid function in charged particle beam exposure apparatus, method for correcting approximation effect and method for deciding reticle pattern
JP2005019780A (en) * 2003-06-27 2005-01-20 Nikon Corp Method for estimating pattern shape in charged-particle ray exposure transfer, method for determining reticle pattern used for charged-particle ray exposure transfer and method for estimating parameter of proximity effect
US7407252B2 (en) * 2004-07-01 2008-08-05 Applied Materials, Inc. Area based optical proximity correction in raster scan printing
EP1788445A1 (en) * 2005-11-18 2007-05-23 Advanced Mask Technology Center GmbH & Co. KG A method of determining an exposure dose and exposure apparatus
KR100675301B1 (en) 2006-01-17 2007-01-29 삼성전자주식회사 Methods of forming pattern using electron beam and cell masks used in electron beam lithography
JP4976071B2 (en) * 2006-02-21 2012-07-18 株式会社ニューフレアテクノロジー Charged particle beam drawing method and charged particle beam drawing apparatus
JP4814651B2 (en) * 2006-02-22 2011-11-16 富士通セミコンダクター株式会社 Charged particle beam exposure method and program used therefor
JP5133087B2 (en) * 2007-02-23 2013-01-30 株式会社ニューフレアテクノロジー Manufacturing method of semiconductor device
JP5217442B2 (en) * 2008-01-08 2013-06-19 富士通セミコンダクター株式会社 Exposure data creation method and exposure method

Also Published As

Publication number Publication date
KR20130073883A (en) 2013-07-03
US20130201468A1 (en) 2013-08-08
JP6618518B2 (en) 2019-12-11
US9250540B2 (en) 2016-02-02
WO2011128393A1 (en) 2011-10-20
FR2959026A1 (en) 2011-10-21
JP2018022912A (en) 2018-02-08
KR101822676B1 (en) 2018-01-26
EP2559054A1 (en) 2013-02-20
JP2013527984A (en) 2013-07-04

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