FR2958809B1 - Methode de stabilisation de la frequence d'emission d'un laser a cascade quantique, dispositif associe - Google Patents

Methode de stabilisation de la frequence d'emission d'un laser a cascade quantique, dispositif associe

Info

Publication number
FR2958809B1
FR2958809B1 FR1052732A FR1052732A FR2958809B1 FR 2958809 B1 FR2958809 B1 FR 2958809B1 FR 1052732 A FR1052732 A FR 1052732A FR 1052732 A FR1052732 A FR 1052732A FR 2958809 B1 FR2958809 B1 FR 2958809B1
Authority
FR
France
Prior art keywords
stabilizing
transmission frequency
device therefor
quantum cascade
cascade laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1052732A
Other languages
English (en)
Other versions
FR2958809A1 (fr
Inventor
Stefano Barbieri
Giorgio Santarelli
Carlo Sirtori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite Paris Diderot Paris 7
Original Assignee
Universite Paris Diderot Paris 7
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite Paris Diderot Paris 7 filed Critical Universite Paris Diderot Paris 7
Priority to FR1052732A priority Critical patent/FR2958809B1/fr
Priority to PCT/FR2011/050725 priority patent/WO2011124829A1/fr
Publication of FR2958809A1 publication Critical patent/FR2958809A1/fr
Application granted granted Critical
Publication of FR2958809B1 publication Critical patent/FR2958809B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06821—Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
FR1052732A 2010-04-09 2010-04-09 Methode de stabilisation de la frequence d'emission d'un laser a cascade quantique, dispositif associe Expired - Fee Related FR2958809B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1052732A FR2958809B1 (fr) 2010-04-09 2010-04-09 Methode de stabilisation de la frequence d'emission d'un laser a cascade quantique, dispositif associe
PCT/FR2011/050725 WO2011124829A1 (fr) 2010-04-09 2011-03-31 Methode de stabilisation de la frequence d'emission d'un laser a cascade quantique, dispositif associe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052732A FR2958809B1 (fr) 2010-04-09 2010-04-09 Methode de stabilisation de la frequence d'emission d'un laser a cascade quantique, dispositif associe

Publications (2)

Publication Number Publication Date
FR2958809A1 FR2958809A1 (fr) 2011-10-14
FR2958809B1 true FR2958809B1 (fr) 2012-06-01

Family

ID=43063929

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052732A Expired - Fee Related FR2958809B1 (fr) 2010-04-09 2010-04-09 Methode de stabilisation de la frequence d'emission d'un laser a cascade quantique, dispositif associe

Country Status (2)

Country Link
FR (1) FR2958809B1 (fr)
WO (1) WO2011124829A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9374253B2 (en) * 2012-01-13 2016-06-21 Qualcomm Incorporated DM-RS based decoding using CSI-RS-based timing
JP2013229553A (ja) * 2012-03-30 2013-11-07 Gigaphoton Inc レーザ装置及び極端紫外光生成装置
EP2866314A1 (fr) 2013-10-24 2015-04-29 ETH Zurich Procédé et dispositif de régulation de fréquence et de stabilisation d'un laser à semi-conducteur
CN105514782B (zh) * 2016-02-06 2018-09-11 哈尔滨工业大学 基于三周期性极化晶体的飞秒脉冲锁相中继方法及装置

Also Published As

Publication number Publication date
WO2011124829A1 (fr) 2011-10-13
FR2958809A1 (fr) 2011-10-14

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Effective date: 20131231