FR2956924B1 - PHOTOVOLTAIC CELL INCORPORATING A NEW TCO LAYER - Google Patents

PHOTOVOLTAIC CELL INCORPORATING A NEW TCO LAYER

Info

Publication number
FR2956924B1
FR2956924B1 FR1051454A FR1051454A FR2956924B1 FR 2956924 B1 FR2956924 B1 FR 2956924B1 FR 1051454 A FR1051454 A FR 1051454A FR 1051454 A FR1051454 A FR 1051454A FR 2956924 B1 FR2956924 B1 FR 2956924B1
Authority
FR
France
Prior art keywords
photovoltaic cell
tco layer
photovoltaic
cell incorporating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1051454A
Other languages
French (fr)
Other versions
FR2956924A1 (en
Inventor
Emmanuelle Peter
Emilie Charlet
Laura Jane Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Priority to FR1051454A priority Critical patent/FR2956924B1/en
Priority to EP11712934A priority patent/EP2543077A1/en
Priority to PCT/FR2011/050406 priority patent/WO2011107701A1/en
Priority to CN2011800119157A priority patent/CN102782860A/en
Publication of FR2956924A1 publication Critical patent/FR2956924A1/en
Application granted granted Critical
Publication of FR2956924B1 publication Critical patent/FR2956924B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a photovoltaic cell (100) including at least one transparent front surface substrate (10) that is particularly made of glass, said substrate protecting a stack of layers (30) that includes a layer (5), having photovoltaic properties, and a lower electrode (3) and upper electrode (6), said electrodes being placed on either side of said photovoltaic layer (5). Said cell is characterized in that at least the lower electrode (3), that is, the electrode closest to the front surface substrate (10), includes or consists of a transparent coating consisting of a mixed metal oxide made of at least the elements Zn, Al, and Ga that have the following composition in wt % on the basis of the corresponding oxides ZnO, Al2O3, and Ga2O3: 88% to 95.8% ZnO, 0.2% to 2% Al2O3, and 4% to 10% Ga2O3.
FR1051454A 2010-03-01 2010-03-01 PHOTOVOLTAIC CELL INCORPORATING A NEW TCO LAYER Expired - Fee Related FR2956924B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1051454A FR2956924B1 (en) 2010-03-01 2010-03-01 PHOTOVOLTAIC CELL INCORPORATING A NEW TCO LAYER
EP11712934A EP2543077A1 (en) 2010-03-01 2011-02-28 Photovoltaic cell having a novel tco layer built therein
PCT/FR2011/050406 WO2011107701A1 (en) 2010-03-01 2011-02-28 Photovoltaic cell having a novel tco layer built therein
CN2011800119157A CN102782860A (en) 2010-03-01 2011-02-28 Photovoltaic cell having a novel TCO layer built therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1051454A FR2956924B1 (en) 2010-03-01 2010-03-01 PHOTOVOLTAIC CELL INCORPORATING A NEW TCO LAYER

Publications (2)

Publication Number Publication Date
FR2956924A1 FR2956924A1 (en) 2011-09-02
FR2956924B1 true FR2956924B1 (en) 2012-03-23

Family

ID=42752273

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1051454A Expired - Fee Related FR2956924B1 (en) 2010-03-01 2010-03-01 PHOTOVOLTAIC CELL INCORPORATING A NEW TCO LAYER

Country Status (4)

Country Link
EP (1) EP2543077A1 (en)
CN (1) CN102782860A (en)
FR (1) FR2956924B1 (en)
WO (1) WO2011107701A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103022236A (en) * 2011-09-26 2013-04-03 吉富新能源科技(上海)有限公司 Technology for conducting vacuum thermal annealing treatment on back electrode of microcrystalline silicon thin-film solar cell
KR20140140187A (en) * 2013-05-28 2014-12-09 삼성코닝어드밴스드글라스 유한회사 ZnO BASED SPUTTERING TARGET AND PHOTOVOLTAIC CELL HAVING PASSIVATION LAYER DEPOSITED BY THE SAME
KR102030915B1 (en) * 2015-04-10 2019-10-10 세키스이가가쿠 고교가부시키가이샤 Interlayer for laminated glass, laminated glass, and production method for interlayer for laminated glass
CN105274486A (en) * 2015-11-18 2016-01-27 南京迪纳科光电材料有限公司 Preparing method for amorphous AlGaZnO transparent electrode material
CN110165001B (en) * 2019-06-03 2020-11-24 南阳理工学院 Rare earth doped photovoltaic thin film material and preparation method thereof
CN114093969B (en) * 2020-07-31 2024-04-12 苏州阿特斯阳光电力科技有限公司 Battery piece, photovoltaic module with battery piece and manufacturing method of photovoltaic module

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007530311A (en) * 2004-02-23 2007-11-01 シン アン エスエヌピー タイワン カンパニー リミテッド Two-layer transparent conductor scheme with improved etching characteristics for transparent electrodes in electro-optic displays
US20070029186A1 (en) * 2005-08-02 2007-02-08 Alexey Krasnov Method of thermally tempering coated article with transparent conductive oxide (TCO) coating using inorganic protective layer during tempering and product made using same
JP4231967B2 (en) * 2006-10-06 2009-03-04 住友金属鉱山株式会社 Oxide sintered body, method for producing the same, transparent conductive film, and solar cell obtained using the same
US20080178932A1 (en) * 2006-11-02 2008-07-31 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
FR2922886B1 (en) * 2007-10-25 2010-10-29 Saint Gobain GLASS SUBSTRATE COATED WITH LAYERS WITH IMPROVED RESISTIVITY.
JP5352878B2 (en) * 2008-03-31 2013-11-27 公立大学法人高知工科大学 Display substrate, method for manufacturing the same, and display device
JP5095517B2 (en) * 2008-06-19 2012-12-12 独立行政法人科学技術振興機構 Aluminum-containing zinc oxide n-type thermoelectric conversion material

Also Published As

Publication number Publication date
EP2543077A1 (en) 2013-01-09
CN102782860A (en) 2012-11-14
WO2011107701A1 (en) 2011-09-09
FR2956924A1 (en) 2011-09-02

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Year of fee payment: 6

ST Notification of lapse

Effective date: 20161130