FR2936904B1 - Procedes et structures pour alterer la contrainte dans des materiaux nitrure iii. - Google Patents

Procedes et structures pour alterer la contrainte dans des materiaux nitrure iii.

Info

Publication number
FR2936904B1
FR2936904B1 FR0805478A FR0805478A FR2936904B1 FR 2936904 B1 FR2936904 B1 FR 2936904B1 FR 0805478 A FR0805478 A FR 0805478A FR 0805478 A FR0805478 A FR 0805478A FR 2936904 B1 FR2936904 B1 FR 2936904B1
Authority
FR
France
Prior art keywords
structures
methods
nitride iii
iii materials
altering stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0805478A
Other languages
English (en)
Other versions
FR2936904A1 (fr
Inventor
Chantal Arena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0805478A priority Critical patent/FR2936904B1/fr
Priority to SG200906041-9A priority patent/SG160293A1/en
Priority to DE200910042324 priority patent/DE102009042324B4/de
Publication of FR2936904A1 publication Critical patent/FR2936904A1/fr
Application granted granted Critical
Publication of FR2936904B1 publication Critical patent/FR2936904B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
FR0805478A 2008-09-22 2008-10-03 Procedes et structures pour alterer la contrainte dans des materiaux nitrure iii. Active FR2936904B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0805478A FR2936904B1 (fr) 2008-10-03 2008-10-03 Procedes et structures pour alterer la contrainte dans des materiaux nitrure iii.
SG200906041-9A SG160293A1 (en) 2008-09-22 2009-09-10 Methods and structures for altering strain in iii-nitride materials
DE200910042324 DE102009042324B4 (de) 2008-09-22 2009-09-21 Verfahren und Strukturen zum Ändern der Verspannung in III-Nitridmaterialien

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0805478A FR2936904B1 (fr) 2008-10-03 2008-10-03 Procedes et structures pour alterer la contrainte dans des materiaux nitrure iii.

Publications (2)

Publication Number Publication Date
FR2936904A1 FR2936904A1 (fr) 2010-04-09
FR2936904B1 true FR2936904B1 (fr) 2011-01-14

Family

ID=40524936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0805478A Active FR2936904B1 (fr) 2008-09-22 2008-10-03 Procedes et structures pour alterer la contrainte dans des materiaux nitrure iii.

Country Status (2)

Country Link
DE (1) DE102009042324B4 (fr)
FR (1) FR2936904B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011012298A1 (de) 2010-12-28 2012-06-28 Osram Opto Semiconductors Gmbh Verbundsubstrat, Halbleiterchip mit Verbundsubstrat und Verfahren zur Herstellung von Verbundsubstraten und Halbleiterchips
FR3118304B1 (fr) * 2020-12-22 2023-06-23 Commissariat Energie Atomique Procédé de réalisation d’une couche à base de matériaux III-N

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US39484A (en) 1863-08-11 Improved smoothing-iron
US5225358A (en) 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
FR2755537B1 (fr) 1996-11-05 1999-03-05 Commissariat Energie Atomique Procede de fabrication d'un film mince sur un support et structure ainsi obtenue
FR2767416B1 (fr) 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2795865B1 (fr) 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'un film mince utilisant une mise sous pression
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6214698B1 (en) 2000-01-11 2001-04-10 Taiwan Semiconductor Manufacturing Company Shallow trench isolation methods employing gap filling doped silicon oxide dielectric layer
FR2818010B1 (fr) 2000-12-08 2003-09-05 Commissariat Energie Atomique Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
US6560006B2 (en) * 2001-04-30 2003-05-06 Agilent Technologies, Inc. Two-dimensional photonic crystal slab waveguide
US7812340B2 (en) * 2003-06-13 2010-10-12 International Business Machines Corporation Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same
US6852652B1 (en) * 2003-09-29 2005-02-08 Sharp Laboratories Of America, Inc. Method of making relaxed silicon-germanium on glass via layer transfer
FR2894989B1 (fr) * 2005-12-21 2009-01-16 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite et substrat composite selon ledit procede
US7692198B2 (en) * 2007-02-19 2010-04-06 Alcatel-Lucent Usa Inc. Wide-bandgap semiconductor devices

Also Published As

Publication number Publication date
DE102009042324B4 (de) 2013-04-11
FR2936904A1 (fr) 2010-04-09
DE102009042324A1 (de) 2010-04-01

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