FR2935068B1 - Procede de preparation d'un substrat en zno en partie ou en totalite semi-isolant ou dope de type p, substrats obtenus, et dispositifs electroniques, electrooptiques ou optoelectroniques les comprenant - Google Patents

Procede de preparation d'un substrat en zno en partie ou en totalite semi-isolant ou dope de type p, substrats obtenus, et dispositifs electroniques, electrooptiques ou optoelectroniques les comprenant

Info

Publication number
FR2935068B1
FR2935068B1 FR0855598A FR0855598A FR2935068B1 FR 2935068 B1 FR2935068 B1 FR 2935068B1 FR 0855598 A FR0855598 A FR 0855598A FR 0855598 A FR0855598 A FR 0855598A FR 2935068 B1 FR2935068 B1 FR 2935068B1
Authority
FR
France
Prior art keywords
substrate
electrooptic
insulating
preparing
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0855598A
Other languages
English (en)
Other versions
FR2935068A1 (fr
Inventor
Maurice Couchaud
Celine Chevalier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0855598A priority Critical patent/FR2935068B1/fr
Priority to US12/536,897 priority patent/US8216926B2/en
Priority to EP09167651.0A priority patent/EP2154712B1/fr
Priority to JP2009187811A priority patent/JP2010042989A/ja
Publication of FR2935068A1 publication Critical patent/FR2935068A1/fr
Application granted granted Critical
Publication of FR2935068B1 publication Critical patent/FR2935068B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0855598A 2008-08-14 2008-08-14 Procede de preparation d'un substrat en zno en partie ou en totalite semi-isolant ou dope de type p, substrats obtenus, et dispositifs electroniques, electrooptiques ou optoelectroniques les comprenant Expired - Fee Related FR2935068B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0855598A FR2935068B1 (fr) 2008-08-14 2008-08-14 Procede de preparation d'un substrat en zno en partie ou en totalite semi-isolant ou dope de type p, substrats obtenus, et dispositifs electroniques, electrooptiques ou optoelectroniques les comprenant
US12/536,897 US8216926B2 (en) 2008-08-14 2009-08-06 Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate, substrates obtained, and electronic, electro-optic or optoelectronic devices comprising them
EP09167651.0A EP2154712B1 (fr) 2008-08-14 2009-08-11 Procédé de préparation d'un substrat en ZnO en partie ou en totalité semi-isolant ou dopé de type P, substrats obtenus, et dispositifs électroniques, électrooptiques ou optoélectroniques les comprenant.
JP2009187811A JP2010042989A (ja) 2008-08-14 2009-08-13 部分的に又は完全に半絶縁性の又はｐ型ドーピングされたＺｎＯ基板を製造する方法、得られた基板、及び、それを備える電子装置、光電子装置または電気光学装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0855598A FR2935068B1 (fr) 2008-08-14 2008-08-14 Procede de preparation d'un substrat en zno en partie ou en totalite semi-isolant ou dope de type p, substrats obtenus, et dispositifs electroniques, electrooptiques ou optoelectroniques les comprenant

Publications (2)

Publication Number Publication Date
FR2935068A1 FR2935068A1 (fr) 2010-02-19
FR2935068B1 true FR2935068B1 (fr) 2011-02-25

Family

ID=40510492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0855598A Expired - Fee Related FR2935068B1 (fr) 2008-08-14 2008-08-14 Procede de preparation d'un substrat en zno en partie ou en totalite semi-isolant ou dope de type p, substrats obtenus, et dispositifs electroniques, electrooptiques ou optoelectroniques les comprenant

Country Status (4)

Country Link
US (1) US8216926B2 (fr)
EP (1) EP2154712B1 (fr)
JP (1) JP2010042989A (fr)
FR (1) FR2935068B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110135293A (ko) * 2010-06-10 2011-12-16 삼성전자주식회사 ｐ형 Ｚｎ 산화물 나노 와이어의 제조 방법 및 ｐ형 Ｚｎ 산화물을 포함하는 전자 소자
US11268196B2 (en) * 2018-10-31 2022-03-08 Arizona Board Of Regents On Behalf Of Arizona State University Lithium lanthanum zirconate thin films

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2717256B2 (ja) * 1988-03-16 1998-02-18 社団法人生産技術振興協会 半導体結晶
US6936101B2 (en) 2002-06-24 2005-08-30 Cermet, Inc. Semi-insulating bulk zinc oxide single crystal
WO2006009782A2 (fr) * 2004-06-17 2006-01-26 On International, Inc. Semi-conducteurs des groupes ii-vi de type p persistants
US7723154B1 (en) * 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
JP4212599B2 (ja) * 2006-03-24 2009-01-21 三洋電機株式会社 半導体素子及び半導体素子の製造方法

Also Published As

Publication number Publication date
EP2154712B1 (fr) 2013-07-24
FR2935068A1 (fr) 2010-02-19
US20100200850A1 (en) 2010-08-12
US8216926B2 (en) 2012-07-10
EP2154712A1 (fr) 2010-02-17
JP2010042989A (ja) 2010-02-25

Similar Documents

Publication Publication Date Title
IL206426A0 (en) Method and device for treating silicon wafers
WO2012129511A3 (fr) Composés semi-conducteurs et dispositifs les comportant
WO2010117449A3 (fr) Composés semi-conducteurs et dispositifs intégrant ceux-ci
MX2009007846A (es) Elementos opticos que comprenden revestimientos de compatibilidad y metodos para producirlos.
WO2010062661A3 (fr) Feuille à polir linéaire d'une seule pièce
HK1141628A1 (en) Process for preparing an electronic device
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
EP2027257A4 (fr) Surface bioactive pour applications a base d'hepatocytes
DE602006020841D1 (de) Verfahren zur herstellung von regioregulären polymeren
DE602006020908D1 (de) Verfahren zur herstellung von regioregulären polymeren
WO2007149487A3 (fr) Dispositifs optoélectroniques et électroniques utilisant des substrats gan à n faces ou à m plans préparés par croissance ammoniothermique
TW200729382A (en) Methods and apparatus for transferring substrates during electronic device manufacturing
WO2014039847A3 (fr) Transistors à effet de champ à base de polymères à orientation macroscopique
WO2007145701A3 (fr) Procédés et dispositifs à fils à l'échelle du nanomètre
ATE509055T1 (de) Verfahren zur polymerisation von thiophen- oder selenophenderivaten
SG178974A1 (en) Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device
WO2011149804A3 (fr) Formulation de semi-conducteur à base de thiophène condensé polymère
WO2011081325A3 (fr) Résine transmettant de la lumière pour un matériau d'encapsulation et dispositif électronique la comprenant
FR2935068B1 (fr) Procede de preparation d'un substrat en zno en partie ou en totalite semi-isolant ou dope de type p, substrats obtenus, et dispositifs electroniques, electrooptiques ou optoelectroniques les comprenant
WO2009036295A3 (fr) Procédé d'étirage pour la fabrication continue de nanofibres constituées d'une variété de matériaux
WO2008027486A3 (fr) Ensemble film de mulching pour système d'irrigation agricole du type goutte-à-goutte
ITMI20111517A1 (it) "procedimento per la preparazione di polimeri contenenti unita' benzoetero[1,3] diazoliche
FR2928775B1 (fr) Procede de fabrication d'un substrat de type semiconducteur sur isolant
WO2008060704A3 (fr) Matériaux photoactifs contenant des nanostructures de groupe iv, et dispositifs optoélectroniques faits à partir de ces matériaux
WO2010063697A3 (fr) Procédé de montage de composants électroniques plats sur une structure plate flexible

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20160429