FR2932007B1 - Capteur d'image matriciel en technologie ccd - Google Patents

Capteur d'image matriciel en technologie ccd

Info

Publication number
FR2932007B1
FR2932007B1 FR0803057A FR0803057A FR2932007B1 FR 2932007 B1 FR2932007 B1 FR 2932007B1 FR 0803057 A FR0803057 A FR 0803057A FR 0803057 A FR0803057 A FR 0803057A FR 2932007 B1 FR2932007 B1 FR 2932007B1
Authority
FR
France
Prior art keywords
image sensor
matrix image
ccd technology
ccd
technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0803057A
Other languages
English (en)
Other versions
FR2932007A1 (fr
Inventor
Pierre Blanchard
Yann Henrion
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to FR0803057A priority Critical patent/FR2932007B1/fr
Publication of FR2932007A1 publication Critical patent/FR2932007A1/fr
Application granted granted Critical
Publication of FR2932007B1 publication Critical patent/FR2932007B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14843—Interline transfer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR0803057A 2008-06-03 2008-06-03 Capteur d'image matriciel en technologie ccd Expired - Fee Related FR2932007B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0803057A FR2932007B1 (fr) 2008-06-03 2008-06-03 Capteur d'image matriciel en technologie ccd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0803057A FR2932007B1 (fr) 2008-06-03 2008-06-03 Capteur d'image matriciel en technologie ccd

Publications (2)

Publication Number Publication Date
FR2932007A1 FR2932007A1 (fr) 2009-12-04
FR2932007B1 true FR2932007B1 (fr) 2010-06-11

Family

ID=40044185

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0803057A Expired - Fee Related FR2932007B1 (fr) 2008-06-03 2008-06-03 Capteur d'image matriciel en technologie ccd

Country Status (1)

Country Link
FR (1) FR2932007B1 (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072204A (en) * 1997-06-23 2000-06-06 Scientific Imaging Technologies, Inc. Thinned CCD

Also Published As

Publication number Publication date
FR2932007A1 (fr) 2009-12-04

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Legal Events

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Year of fee payment: 9

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Year of fee payment: 10

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CD Change of name or company name

Owner name: TELEDYNE E2V SEMICONDUCTORS SAS, FR

Effective date: 20180907

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Year of fee payment: 13

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Effective date: 20220205