FR2922045B1 - HIGH ELECTRONIC MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Google Patents

HIGH ELECTRONIC MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

Info

Publication number
FR2922045B1
FR2922045B1 FR0707005A FR0707005A FR2922045B1 FR 2922045 B1 FR2922045 B1 FR 2922045B1 FR 0707005 A FR0707005 A FR 0707005A FR 0707005 A FR0707005 A FR 0707005A FR 2922045 B1 FR2922045 B1 FR 2922045B1
Authority
FR
France
Prior art keywords
manufacturing
same
mobility transistor
high electronic
electronic mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0707005A
Other languages
French (fr)
Other versions
FR2922045A1 (en
Inventor
Sylvain Delage
Erhard Kohn
Farid Medjoub
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0707005A priority Critical patent/FR2922045B1/en
Publication of FR2922045A1 publication Critical patent/FR2922045A1/en
Application granted granted Critical
Publication of FR2922045B1 publication Critical patent/FR2922045B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
FR0707005A 2007-10-05 2007-10-05 HIGH ELECTRONIC MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME Active FR2922045B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0707005A FR2922045B1 (en) 2007-10-05 2007-10-05 HIGH ELECTRONIC MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0707005A FR2922045B1 (en) 2007-10-05 2007-10-05 HIGH ELECTRONIC MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

Publications (2)

Publication Number Publication Date
FR2922045A1 FR2922045A1 (en) 2009-04-10
FR2922045B1 true FR2922045B1 (en) 2011-07-15

Family

ID=39370183

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0707005A Active FR2922045B1 (en) 2007-10-05 2007-10-05 HIGH ELECTRONIC MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

Country Status (1)

Country Link
FR (1) FR2922045B1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer

Also Published As

Publication number Publication date
FR2922045A1 (en) 2009-04-10

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