FR2911597B1 - Procede de formation et de controle d'interfaces rugueuses. - Google Patents

Procede de formation et de controle d'interfaces rugueuses.

Info

Publication number
FR2911597B1
FR2911597B1 FR0752803A FR0752803A FR2911597B1 FR 2911597 B1 FR2911597 B1 FR 2911597B1 FR 0752803 A FR0752803 A FR 0752803A FR 0752803 A FR0752803 A FR 0752803A FR 2911597 B1 FR2911597 B1 FR 2911597B1
Authority
FR
France
Prior art keywords
forming
rough interfaces
controlling rough
controlling
interfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0752803A
Other languages
English (en)
Other versions
FR2911597A1 (fr
Inventor
Bernard Aspar
Blanchard Christelle Lagahe
Nicolas Sousbie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0752803A priority Critical patent/FR2911597B1/fr
Priority to US11/827,715 priority patent/US7807548B2/en
Priority to CN2008800014172A priority patent/CN101578230B/zh
Priority to KR1020097010768A priority patent/KR20090105910A/ko
Priority to JP2009546011A priority patent/JP2010517258A/ja
Priority to EP08702243A priority patent/EP2109582A1/fr
Priority to PCT/IB2008/000081 priority patent/WO2008090426A1/fr
Publication of FR2911597A1 publication Critical patent/FR2911597A1/fr
Application granted granted Critical
Publication of FR2911597B1 publication Critical patent/FR2911597B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00952—Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
    • B81C2201/115—Roughening a surface
FR0752803A 2007-01-22 2007-01-22 Procede de formation et de controle d'interfaces rugueuses. Active FR2911597B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0752803A FR2911597B1 (fr) 2007-01-22 2007-01-22 Procede de formation et de controle d'interfaces rugueuses.
US11/827,715 US7807548B2 (en) 2007-01-22 2007-07-13 Process of forming and controlling rough interfaces
KR1020097010768A KR20090105910A (ko) 2007-01-22 2008-01-10 거친 계면을 생성하고 조절하는 방법
JP2009546011A JP2010517258A (ja) 2007-01-22 2008-01-10 粗界面を形成し制御するための方法
CN2008800014172A CN101578230B (zh) 2007-01-22 2008-01-10 形成并控制粗糙界面的方法
EP08702243A EP2109582A1 (fr) 2007-01-22 2008-01-10 Procédé de formation et de contrôle d'interfaces rugueuses
PCT/IB2008/000081 WO2008090426A1 (fr) 2007-01-22 2008-01-10 Procédé de formation et de contrôle d'interfaces rugueuses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0752803A FR2911597B1 (fr) 2007-01-22 2007-01-22 Procede de formation et de controle d'interfaces rugueuses.

Publications (2)

Publication Number Publication Date
FR2911597A1 FR2911597A1 (fr) 2008-07-25
FR2911597B1 true FR2911597B1 (fr) 2009-05-01

Family

ID=38597107

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0752803A Active FR2911597B1 (fr) 2007-01-22 2007-01-22 Procede de formation et de controle d'interfaces rugueuses.

Country Status (7)

Country Link
US (1) US7807548B2 (fr)
EP (1) EP2109582A1 (fr)
JP (1) JP2010517258A (fr)
KR (1) KR20090105910A (fr)
CN (1) CN101578230B (fr)
FR (1) FR2911597B1 (fr)
WO (1) WO2008090426A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102193001A (zh) * 2011-05-18 2011-09-21 中国电子科技集团公司第二十六研究所 Saw-mems加速度传感器及制作方法
CN104507853B (zh) 2012-07-31 2016-11-23 索泰克公司 形成半导体设备的方法
US9611133B2 (en) * 2014-09-11 2017-04-04 Invensense, Inc. Film induced interface roughening and method of producing the same
CN105161413B (zh) 2015-09-21 2018-07-17 京东方科技集团股份有限公司 加工多晶硅表面的方法以及加工基板表面的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882538A (en) * 1995-08-28 1999-03-16 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6238946B1 (en) * 1999-08-17 2001-05-29 International Business Machines Corporation Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
JP3943782B2 (ja) 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
JP3509781B2 (ja) * 2001-06-25 2004-03-22 株式会社半導体理工学研究センター 半導体装置の製造方法
KR100471158B1 (ko) * 2002-12-27 2005-03-10 삼성전기주식회사 실리콘 온 절연체 기판의 제조방법
JP4509488B2 (ja) * 2003-04-02 2010-07-21 株式会社Ｓｕｍｃｏ 貼り合わせ基板の製造方法
FR2857953B1 (fr) * 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
US7052978B2 (en) * 2003-08-28 2006-05-30 Intel Corporation Arrangements incorporating laser-induced cleaving
WO2005024925A1 (fr) * 2003-09-05 2005-03-17 Sumco Corporation Procede de production d'une plaquette soi
EP1638141B1 (fr) 2004-09-16 2007-11-14 STMicroelectronics S.r.l. Procédé de fabrication de substrats semiconducteurs composites par transfert de couche
FR2888663B1 (fr) * 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant

Also Published As

Publication number Publication date
CN101578230A (zh) 2009-11-11
FR2911597A1 (fr) 2008-07-25
JP2010517258A (ja) 2010-05-20
WO2008090426A1 (fr) 2008-07-31
CN101578230B (zh) 2012-06-06
KR20090105910A (ko) 2009-10-07
US20080176382A1 (en) 2008-07-24
US7807548B2 (en) 2010-10-05
EP2109582A1 (fr) 2009-10-21

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