FR2884826B1 - POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - Google Patents
POLISHING COMPOSITION AND POLISHING METHOD USING THE SAMEInfo
- Publication number
- FR2884826B1 FR2884826B1 FR0651112A FR0651112A FR2884826B1 FR 2884826 B1 FR2884826 B1 FR 2884826B1 FR 0651112 A FR0651112 A FR 0651112A FR 0651112 A FR0651112 A FR 0651112A FR 2884826 B1 FR2884826 B1 FR 2884826B1
- Authority
- FR
- France
- Prior art keywords
- polishing
- same
- composition
- polishing composition
- polishing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005099949A JP4759298B2 (en) | 2005-03-30 | 2005-03-30 | Abrasive for single crystal surface and polishing method |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2884826A1 FR2884826A1 (en) | 2006-10-27 |
FR2884826B1 true FR2884826B1 (en) | 2009-03-27 |
Family
ID=37068685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0651112A Expired - Fee Related FR2884826B1 (en) | 2005-03-30 | 2006-03-30 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060218867A1 (en) |
JP (1) | JP4759298B2 (en) |
FR (1) | FR2884826B1 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007288340A (en) * | 2006-04-13 | 2007-11-01 | Funai Electric Co Ltd | Individual setting information sharing system |
DE102007035266B4 (en) * | 2007-07-27 | 2010-03-25 | Siltronic Ag | A method of polishing a substrate of silicon or an alloy of silicon and germanium |
DE102008059044B4 (en) * | 2008-11-26 | 2013-08-22 | Siltronic Ag | A method of polishing a semiconductor wafer with a strained-relaxed Si1-xGex layer |
KR20140012135A (en) * | 2011-04-26 | 2014-01-29 | 아사히 가라스 가부시키가이샤 | Method for polishing non-oxide single crystal substrate |
EP2554612A1 (en) | 2011-08-01 | 2013-02-06 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5 |
WO2013018015A2 (en) | 2011-08-01 | 2013-02-07 | Basf Se | A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND |
EP2554613A1 (en) | 2011-08-01 | 2013-02-06 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound |
JP6140390B2 (en) * | 2012-03-16 | 2017-05-31 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP6095897B2 (en) * | 2012-03-16 | 2017-03-15 | 株式会社フジミインコーポレーテッド | Polishing composition |
US9238755B2 (en) * | 2011-11-25 | 2016-01-19 | Fujima Incorporated | Polishing composition |
KR20150014924A (en) * | 2012-04-18 | 2015-02-09 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition |
JP6113619B2 (en) * | 2013-09-30 | 2017-04-12 | 株式会社フジミインコーポレーテッド | Polishing composition |
US9431261B2 (en) * | 2014-12-01 | 2016-08-30 | The Boeing Company | Removal of defects by in-situ etching during chemical-mechanical polishing processing |
JP7488672B2 (en) | 2020-03-19 | 2024-05-22 | 株式会社フジミインコーポレーテッド | Polishing method and manufacturing method of semiconductor substrate |
CN113913116B (en) * | 2021-11-11 | 2022-09-09 | 中国电子科技集团公司第二十六研究所 | Polishing solution for polishing germanium single crystal and germanium single crystal polishing method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3342652A (en) * | 1964-04-02 | 1967-09-19 | Ibm | Chemical polishing of a semi-conductor substrate |
DE1521794A1 (en) * | 1965-07-23 | 1969-10-23 | Ibm Deutschland | Apparatus for chemical polishing of semiconductor wafers |
US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
US3738882A (en) * | 1971-10-14 | 1973-06-12 | Ibm | Method for polishing semiconductor gallium arsenide planar surfaces |
DE3517665A1 (en) * | 1985-05-15 | 1986-11-20 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | METHOD FOR POLISHING SILICON DISC |
JPH01177969A (en) * | 1987-12-29 | 1989-07-14 | Mitsubishi Monsanto Chem Co | Fine grinding compound for wafer |
JPH01253239A (en) * | 1988-04-01 | 1989-10-09 | Mitsubishi Monsanto Chem Co | Surface abrasion for algaas |
JP2621398B2 (en) * | 1988-08-09 | 1997-06-18 | 三菱マテリアル株式会社 | Mirror polishing liquid for GaAs wafer and polishing method |
JPH0691058B2 (en) * | 1988-10-06 | 1994-11-14 | 信越半導体株式会社 | Semiconductor wafer polishing method |
JPH0738381B2 (en) * | 1988-12-14 | 1995-04-26 | 信越半導体株式会社 | Wafer polishing machine |
US5137544A (en) * | 1990-04-10 | 1992-08-11 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
US6776696B2 (en) * | 2002-10-28 | 2004-08-17 | Planar Solutions Llc | Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers |
JP2004349426A (en) * | 2003-05-21 | 2004-12-09 | Jsr Corp | Chemical mechanical polishing method for sti |
-
2005
- 2005-03-30 JP JP2005099949A patent/JP4759298B2/en not_active Expired - Fee Related
-
2006
- 2006-03-27 US US11/389,702 patent/US20060218867A1/en not_active Abandoned
- 2006-03-30 FR FR0651112A patent/FR2884826B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2884826A1 (en) | 2006-10-27 |
US20060218867A1 (en) | 2006-10-05 |
JP2006278981A (en) | 2006-10-12 |
JP4759298B2 (en) | 2011-08-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 11 |
|
ST | Notification of lapse |
Effective date: 20171130 |