FR2884826B1 - POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - Google Patents

POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME

Info

Publication number
FR2884826B1
FR2884826B1 FR0651112A FR0651112A FR2884826B1 FR 2884826 B1 FR2884826 B1 FR 2884826B1 FR 0651112 A FR0651112 A FR 0651112A FR 0651112 A FR0651112 A FR 0651112A FR 2884826 B1 FR2884826 B1 FR 2884826B1
Authority
FR
France
Prior art keywords
polishing
same
composition
polishing composition
polishing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0651112A
Other languages
French (fr)
Other versions
FR2884826A1 (en
Inventor
Isamu Koshiyama
Sachiko Hoshiya
Tetsushi Senda
Haruo Masai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of FR2884826A1 publication Critical patent/FR2884826A1/en
Application granted granted Critical
Publication of FR2884826B1 publication Critical patent/FR2884826B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR0651112A 2005-03-30 2006-03-30 POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME Expired - Fee Related FR2884826B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005099949A JP4759298B2 (en) 2005-03-30 2005-03-30 Abrasive for single crystal surface and polishing method

Publications (2)

Publication Number Publication Date
FR2884826A1 FR2884826A1 (en) 2006-10-27
FR2884826B1 true FR2884826B1 (en) 2009-03-27

Family

ID=37068685

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0651112A Expired - Fee Related FR2884826B1 (en) 2005-03-30 2006-03-30 POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME

Country Status (3)

Country Link
US (1) US20060218867A1 (en)
JP (1) JP4759298B2 (en)
FR (1) FR2884826B1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007288340A (en) * 2006-04-13 2007-11-01 Funai Electric Co Ltd Individual setting information sharing system
DE102007035266B4 (en) 2007-07-27 2010-03-25 Siltronic Ag A method of polishing a substrate of silicon or an alloy of silicon and germanium
DE102008059044B4 (en) * 2008-11-26 2013-08-22 Siltronic Ag A method of polishing a semiconductor wafer with a strained-relaxed Si1-xGex layer
CN103493183B (en) * 2011-04-26 2016-06-08 旭硝子株式会社 The Ginding process of non-oxidized substance monocrystal substrate
EP2554613A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound
EP2554612A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5
JP2014529183A (en) 2011-08-01 2014-10-30 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ Method for manufacturing a semiconductor device comprising chemical mechanical polishing of elemental germanium and / or Si1-xGex material in the presence of a chemical mechanical polishing composition comprising certain organic compounds
JP6140390B2 (en) * 2012-03-16 2017-05-31 株式会社フジミインコーポレーテッド Polishing composition
KR102028217B1 (en) * 2011-11-25 2019-10-02 가부시키가이샤 후지미인코퍼레이티드 Polishing composition
JP6095897B2 (en) * 2012-03-16 2017-03-15 株式会社フジミインコーポレーテッド Polishing composition
KR20150014924A (en) * 2012-04-18 2015-02-09 가부시키가이샤 후지미인코퍼레이티드 Polishing composition
JP6113619B2 (en) * 2013-09-30 2017-04-12 株式会社フジミインコーポレーテッド Polishing composition
US9431261B2 (en) * 2014-12-01 2016-08-30 The Boeing Company Removal of defects by in-situ etching during chemical-mechanical polishing processing
JP7488672B2 (en) 2020-03-19 2024-05-22 株式会社フジミインコーポレーテッド Polishing method and manufacturing method of semiconductor substrate
CN113913116B (en) * 2021-11-11 2022-09-09 中国电子科技集团公司第二十六研究所 Polishing solution for polishing germanium single crystal and germanium single crystal polishing method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342652A (en) * 1964-04-02 1967-09-19 Ibm Chemical polishing of a semi-conductor substrate
DE1521794A1 (en) * 1965-07-23 1969-10-23 Ibm Deutschland Apparatus for chemical polishing of semiconductor wafers
US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
US3738882A (en) * 1971-10-14 1973-06-12 Ibm Method for polishing semiconductor gallium arsenide planar surfaces
DE3517665A1 (en) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen METHOD FOR POLISHING SILICON DISC
JPH01177969A (en) * 1987-12-29 1989-07-14 Mitsubishi Monsanto Chem Co Fine grinding compound for wafer
JPH01253239A (en) * 1988-04-01 1989-10-09 Mitsubishi Monsanto Chem Co Surface abrasion for algaas
JP2621398B2 (en) * 1988-08-09 1997-06-18 三菱マテリアル株式会社 Mirror polishing liquid for GaAs wafer and polishing method
JPH0691058B2 (en) * 1988-10-06 1994-11-14 信越半導体株式会社 Semiconductor wafer polishing method
JPH0738381B2 (en) * 1988-12-14 1995-04-26 信越半導体株式会社 Wafer polishing machine
US5137544A (en) * 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US6776696B2 (en) * 2002-10-28 2004-08-17 Planar Solutions Llc Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers
JP2004349426A (en) * 2003-05-21 2004-12-09 Jsr Corp Chemical mechanical polishing method for sti

Also Published As

Publication number Publication date
FR2884826A1 (en) 2006-10-27
US20060218867A1 (en) 2006-10-05
JP4759298B2 (en) 2011-08-31
JP2006278981A (en) 2006-10-12

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Legal Events

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Year of fee payment: 11

ST Notification of lapse

Effective date: 20171130