JP6095897B2 - Polishing composition - Google Patents
Polishing composition Download PDFInfo
- Publication number
- JP6095897B2 JP6095897B2 JP2012061154A JP2012061154A JP6095897B2 JP 6095897 B2 JP6095897 B2 JP 6095897B2 JP 2012061154 A JP2012061154 A JP 2012061154A JP 2012061154 A JP2012061154 A JP 2012061154A JP 6095897 B2 JP6095897 B2 JP 6095897B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing composition
- silicon material
- alcohol
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 188
- 239000000203 mixture Substances 0.000 title claims description 94
- 239000000463 material Substances 0.000 claims description 44
- 239000002210 silicon-based material Substances 0.000 claims description 39
- 150000001875 compounds Chemical class 0.000 claims description 29
- 239000006061 abrasive grain Substances 0.000 claims description 28
- 230000007062 hydrolysis Effects 0.000 claims description 27
- 238000006460 hydrolysis reaction Methods 0.000 claims description 27
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 24
- 239000007800 oxidant agent Substances 0.000 claims description 23
- 230000002401 inhibitory effect Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 239000011164 primary particle Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 2
- -1 silica Chemical class 0.000 description 26
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 15
- 229910052732 germanium Inorganic materials 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 10
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 9
- 239000002202 Polyethylene glycol Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 9
- 229920001223 polyethylene glycol Polymers 0.000 description 9
- 229920001451 polypropylene glycol Polymers 0.000 description 9
- 150000005215 alkyl ethers Chemical class 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 125000003342 alkenyl group Chemical group 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000003002 pH adjusting agent Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- BVJSUAQZOZWCKN-UHFFFAOYSA-N p-hydroxybenzyl alcohol Chemical compound OCC1=CC=C(O)C=C1 BVJSUAQZOZWCKN-UHFFFAOYSA-N 0.000 description 4
- CQRYARSYNCAZFO-UHFFFAOYSA-N salicyl alcohol Chemical compound OCC1=CC=CC=C1O CQRYARSYNCAZFO-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- XPNGNIFUDRPBFJ-UHFFFAOYSA-N (2-methylphenyl)methanol Chemical compound CC1=CC=CC=C1CO XPNGNIFUDRPBFJ-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 description 2
- OKVJCVWFVRATSG-UHFFFAOYSA-N 3-hydroxybenzyl alcohol Chemical compound OCC1=CC=CC(O)=C1 OKVJCVWFVRATSG-UHFFFAOYSA-N 0.000 description 2
- MSHFRERJPWKJFX-UHFFFAOYSA-N 4-Methoxybenzyl alcohol Chemical compound COC1=CC=C(CO)C=C1 MSHFRERJPWKJFX-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- MWUVGXCUHWKQJE-UHFFFAOYSA-N 4-fluorophenethyl alcohol Chemical compound OCCC1=CC=C(F)C=C1 MWUVGXCUHWKQJE-UHFFFAOYSA-N 0.000 description 2
- NGYYFWGABVVEPL-UHFFFAOYSA-N 5-(hydroxymethyl)benzene-1,3-diol Chemical compound OCC1=CC(O)=CC(O)=C1 NGYYFWGABVVEPL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- YZGQDNOIGFBYKF-UHFFFAOYSA-N Ethoxyacetic acid Chemical compound CCOCC(O)=O YZGQDNOIGFBYKF-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 2
- MRNZSTMRDWRNNR-UHFFFAOYSA-N bis(hexamethylene)triamine Chemical compound NCCCCCCNCCCCCCN MRNZSTMRDWRNNR-UHFFFAOYSA-N 0.000 description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 2
- 229940075419 choline hydroxide Drugs 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- VYFOAVADNIHPTR-UHFFFAOYSA-N isatoic anhydride Chemical compound NC1=CC=CC=C1CO VYFOAVADNIHPTR-UHFFFAOYSA-N 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- QJANIQCEDPJNLO-UHFFFAOYSA-N (2-methyl-3-nitrophenyl)methanol Chemical compound CC1=C(CO)C=CC=C1[N+]([O-])=O QJANIQCEDPJNLO-UHFFFAOYSA-N 0.000 description 1
- BWRBVBFLFQKBPT-UHFFFAOYSA-N (2-nitrophenyl)methanol Chemical compound OCC1=CC=CC=C1[N+]([O-])=O BWRBVBFLFQKBPT-UHFFFAOYSA-N 0.000 description 1
- BTANRVKWQNVYAZ-BYPYZUCNSA-N (2S)-butan-2-ol Chemical compound CC[C@H](C)O BTANRVKWQNVYAZ-BYPYZUCNSA-N 0.000 description 1
- SJWFXCIHNDVPSH-QMMMGPOBSA-N (2S)-octan-2-ol Chemical compound CCCCCC[C@H](C)O SJWFXCIHNDVPSH-QMMMGPOBSA-N 0.000 description 1
- GPHYIQCSMDYRGJ-UHFFFAOYSA-N (3,5-dinitrophenyl)methanol Chemical compound OCC1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1 GPHYIQCSMDYRGJ-UHFFFAOYSA-N 0.000 description 1
- OJZQOQNSUZLSMV-UHFFFAOYSA-N (3-aminophenyl)methanol Chemical compound NC1=CC=CC(CO)=C1 OJZQOQNSUZLSMV-UHFFFAOYSA-N 0.000 description 1
- NELPTBUSFQMYOB-UHFFFAOYSA-N (3-methyl-2-nitrophenyl)methanol Chemical compound CC1=CC=CC(CO)=C1[N+]([O-])=O NELPTBUSFQMYOB-UHFFFAOYSA-N 0.000 description 1
- KOVQGYQQVNCUBR-UHFFFAOYSA-N (3-methyl-4-nitrophenyl)methanol Chemical compound CC1=CC(CO)=CC=C1[N+]([O-])=O KOVQGYQQVNCUBR-UHFFFAOYSA-N 0.000 description 1
- GEZMEIHVFSWOCA-UHFFFAOYSA-N (4-fluorophenyl)methanol Chemical compound OCC1=CC=C(F)C=C1 GEZMEIHVFSWOCA-UHFFFAOYSA-N 0.000 description 1
- URCWIFSXDARYLY-UHFFFAOYSA-N (4-methyl-3-nitrophenyl)methanol Chemical compound CC1=CC=C(CO)C=C1[N+]([O-])=O URCWIFSXDARYLY-UHFFFAOYSA-N 0.000 description 1
- IKEYTRGLCHZQHO-UHFFFAOYSA-N (5-methyl-2-nitrophenyl)methanol Chemical compound CC1=CC=C([N+]([O-])=O)C(CO)=C1 IKEYTRGLCHZQHO-UHFFFAOYSA-N 0.000 description 1
- ILDXSRFKXABMHH-UHFFFAOYSA-N 2-(2-aminophenyl)ethanol Chemical compound NC1=CC=CC=C1CCO ILDXSRFKXABMHH-UHFFFAOYSA-N 0.000 description 1
- SLRIOXRBAPBGEI-UHFFFAOYSA-N 2-(2-nitrophenyl)ethanol Chemical compound OCCC1=CC=CC=C1[N+]([O-])=O SLRIOXRBAPBGEI-UHFFFAOYSA-N 0.000 description 1
- QXHDYMUPPXAMPQ-UHFFFAOYSA-N 2-(4-aminophenyl)ethanol Chemical compound NC1=CC=C(CCO)C=C1 QXHDYMUPPXAMPQ-UHFFFAOYSA-N 0.000 description 1
- WCASXYBKJHWFMY-NSCUHMNNSA-N 2-Buten-1-ol Chemical compound C\C=C\CO WCASXYBKJHWFMY-NSCUHMNNSA-N 0.000 description 1
- GLVYLTSKTCWWJR-UHFFFAOYSA-N 2-carbonoperoxoylbenzoic acid Chemical compound OOC(=O)C1=CC=CC=C1C(O)=O GLVYLTSKTCWWJR-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 description 1
- JJCKHVUTVOPLBV-UHFFFAOYSA-N 3-Methylbenzyl alcohol Chemical compound CC1=CC=CC(CO)=C1 JJCKHVUTVOPLBV-UHFFFAOYSA-N 0.000 description 1
- JRXXEXVXTFEBIY-UHFFFAOYSA-N 3-ethoxypropanoic acid Chemical compound CCOCCC(O)=O JRXXEXVXTFEBIY-UHFFFAOYSA-N 0.000 description 1
- QDHRSLFSDGCJFX-UHFFFAOYSA-N 3-fluorobenzyl alcohol Chemical compound OCC1=CC=CC(F)=C1 QDHRSLFSDGCJFX-UHFFFAOYSA-N 0.000 description 1
- WSGYTJNNHPZFKR-UHFFFAOYSA-N 3-hydroxypropanenitrile Chemical compound OCCC#N WSGYTJNNHPZFKR-UHFFFAOYSA-N 0.000 description 1
- CWNPOQFCIIFQDM-UHFFFAOYSA-N 3-nitrobenzyl alcohol Chemical compound OCC1=CC=CC([N+]([O-])=O)=C1 CWNPOQFCIIFQDM-UHFFFAOYSA-N 0.000 description 1
- MOOUWXDQAUXZRG-UHFFFAOYSA-N 4-(trifluoromethyl)benzyl alcohol Chemical compound OCC1=CC=C(C(F)(F)F)C=C1 MOOUWXDQAUXZRG-UHFFFAOYSA-N 0.000 description 1
- KLSLBUSXWBJMEC-UHFFFAOYSA-N 4-Propylphenol Chemical compound CCCC1=CC=C(O)C=C1 KLSLBUSXWBJMEC-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- KMTDMTZBNYGUNX-UHFFFAOYSA-N 4-methylbenzyl alcohol Chemical compound CC1=CC=C(CO)C=C1 KMTDMTZBNYGUNX-UHFFFAOYSA-N 0.000 description 1
- JKTYGPATCNUWKN-UHFFFAOYSA-N 4-nitrobenzyl alcohol Chemical compound OCC1=CC=C([N+]([O-])=O)C=C1 JKTYGPATCNUWKN-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229920001661 Chitosan Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- TWQNSHZTQSLJEE-UHFFFAOYSA-N [2-(trifluoromethyl)phenyl]methanol Chemical compound OCC1=CC=CC=C1C(F)(F)F TWQNSHZTQSLJEE-UHFFFAOYSA-N 0.000 description 1
- BXEHKCUWIODEDE-UHFFFAOYSA-N [3-(trifluoromethyl)phenyl]methanol Chemical compound OCC1=CC=CC(C(F)(F)F)=C1 BXEHKCUWIODEDE-UHFFFAOYSA-N 0.000 description 1
- XYDQMRVDDPZFMM-UHFFFAOYSA-N [Ag+2] Chemical class [Ag+2] XYDQMRVDDPZFMM-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明は、ＩＶ族材料を含有する部分（以下、ＩＶ族材料部分ともいう）と酸化シリコンなどのケイ素材料を含有する部分（以下、ケイ素材料部分ともいう）とを有する研磨対象物を研磨する用途で使用される研磨用組成物に関する。本発明はまた、その研磨用組成物を用いた研磨方法及び基板の製造方法に関する。 The present invention polishes a polishing object having a portion containing a group IV material (hereinafter also referred to as a group IV material portion) and a portion containing a silicon material such as silicon oxide (hereinafter also referred to as a silicon material portion). The present invention relates to a polishing composition used in an application. The present invention also relates to a polishing method and a substrate manufacturing method using the polishing composition.
トランジスタの消費電力低減やパフォーマンス（動作特性）を向上させる技術のひとつとして、キャリアの移動度を高める高移動度チャネル材料の検討が進められている。これらのキャリアの輸送特性が向上したチャネルでは、オン時のドレイン電流を高められるため、十分なオン電流を得つつ、電源電圧を下げられる。このコンビネーションは、低い電力におけるより高いＭＯＳＦＥＴのパフォーマンスをもたらす。 As one of the techniques for reducing the power consumption of transistors and improving the performance (operation characteristics), studies are being made on high-mobility channel materials that increase carrier mobility. In these channels with improved carrier transport characteristics, the drain current at the time of ON can be increased, so that the power supply voltage can be lowered while obtaining a sufficient ON current. This combination results in higher MOSFET performance at low power.
高移動度チャネル材料としてはＩＶ族材料を使用したＳｉＧｅ（シリコンゲルマニウム）およびＧｅ（ ゲルマニウム）、ＩＩＩ−Ｖ族化合物、Ｃ（炭素）のみからなるグラフェンの適用が期待されているが、現在はＩＩＩ−Ｖ族化合物に比べて導入が容易なＩＶ族材料を使用したＳｉＧｅ（シリコンゲルマニウム）およびＧｅ（ゲルマニウム）を使ったチャネルが積極的に検討されている。ＩＩＩ−Ｖ族化合物チャネルの形成は、チャネルの結晶性を高め、形状をうまく制御・成長させる技術が確立されていない事、またＩＶ族材料を使用したチャンネルに対してコスト面で劣ることが理由として挙げられる。 As a high mobility channel material, application of graphene consisting only of SiGe (silicon germanium) and Ge (germanium), III-V group compound, and C (carbon) using a group IV material is expected. Channels using SiGe (silicon germanium) and Ge (germanium) using group IV materials that are easier to introduce than group V compounds are being actively studied. The reason for the formation of III-V compound channels is that the technology for improving the crystallinity of the channels and controlling and growing the shape has not been established, and the cost is inferior to the channel using the group IV material. As mentioned.
ＩＶ族材料チャンネルは、ＩＶ族材料部分とケイ素材料部分とを有する研磨対象物を研磨して形成することができる。この場合、ケイ素材料部分よりもＩＶ族材料部分を高選択的に研磨することができる研磨用組成物を用いれば、ＩＶ族材料部分を効率的に研磨除去することが可能になる。また、酸化シリコン等のオキサイドロスが少なくなるため、配線層間の耐電圧が確保される。さらに、その後フォトリソグラフィ工程を行う際には、オキサイドロスが少ないために露光焦点合わせが容易となり、工程が安定する。しかしながら、ＩＶ族化合物のみからなるＩＶ族化合物半導体基板を研磨する用途で従来使用されている、例えば特許文献１、又は特許文献２に記載のような研磨用組成物は、ＩＶ族材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用したときに、ＩＶ族材料部分に対する十分に高い研磨選択性を発揮しない。 The group IV material channel can be formed by polishing a polishing object having a group IV material portion and a silicon material portion. In this case, if a polishing composition that can polish the group IV material portion more selectively than the silicon material portion is used, the group IV material portion can be efficiently polished and removed. Further, since the oxide loss of silicon oxide or the like is reduced, a withstand voltage between the wiring layers is ensured. Further, when performing the photolithography process thereafter, exposure focus adjustment becomes easy because the oxide loss is small, and the process is stabilized. However, the polishing composition conventionally used for polishing a group IV compound semiconductor substrate composed only of a group IV compound, for example, as described in Patent Document 1 or Patent Document 2, includes a Group IV material portion and silicon. When used in an application for polishing a polishing object having a material portion, a sufficiently high polishing selectivity for a group IV material portion is not exhibited.
そこで本発明の目的は、ＩＶ族材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用したときにＩＶ族材料部分に対する高い研磨選択性を発揮することができる研磨用組成物を提供すること、またその研磨用組成物を用いた研磨方法及び基板の製造方法を提供することにある。 Accordingly, an object of the present invention is to provide a polishing composition capable of exhibiting high polishing selectivity for a group IV material part when used in an application for polishing a polishing object having a group IV material part and a silicon material part. Another object of the present invention is to provide a polishing method and a substrate manufacturing method using the polishing composition.
上記の目的を達成するために、本発明の第１の態様では、Ｇｅ又はＳｉＧｅ材料を含有する部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用される研磨用組成物であって、平均一次粒子径が４０ｎｍ以下である砥粒と、酸化剤とを含有し、ｐＨが５〜９である研磨用組成物を提供する。
この研磨用組成物は、前記ケイ素材料部分の表面ＯＨ基と結合してケイ素材料部分の加水分解を抑制する働きをする加水分解抑制化合物をさらに含有することが好ましい。
本発明の第２の態様では、Ｇｅ又はＳｉＧｅ材料を含有する部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用される研磨用組成物であって、砥粒と、酸化剤と、前記ケイ素材料部分の表面ＯＨ基と結合してケイ素材料部分の加水分解を抑制する働きをする加水分解抑制化合物とを含有し、ｐＨが５〜９である研磨用組成物を提供する。
本発明の第３の態様では、上記第１又は第２の態様の研磨用組成物を用いて、Ｇｅ又はＳｉＧｅ材料を含有する部分とケイ素材料部分とを有する研磨対象物を研磨する方法を提供する。
本発明の第４の態様では、上記第１又は第２の態様の研磨用組成物を用いて、Ｇｅ又はＳｉＧｅ材料を含有する部分とケイ素材料部分とを有する研磨対象物を研磨することにより、基板を製造する方法を提供する。
In order to achieve the above object, according to a first aspect of the present invention, there is provided a polishing composition for use in polishing a polishing object having a part containing a Ge or SiGe material and a silicon material part. Te, abrasive grains having an average primary particle diameter of 40nm or less, containing an oxidizing agents, pH provides a polishing composition Ru 5-9 der.
The polishing composition preferably further contains a hydrolysis-inhibiting compound that functions to inhibit the hydrolysis of the silicon material part by binding to the surface OH group of the silicon material part.
In the second aspect of the present invention, there is provided a polishing composition for use in polishing a polishing object having a portion containing a Ge or SiGe material and a silicon material portion, comprising abrasive grains, an oxidizing agent, the bonded to silicon material portion of the surface OH groups contain a hydrolysis inhibitor compound serves to inhibit the hydrolysis of silicon material portions, pH provides a polishing composition Ru 5-9 der.
According to a third aspect of the present invention, there is provided a method for polishing a polishing object having a portion containing Ge or SiGe material and a silicon material portion using the polishing composition of the first or second aspect. To do.
In the fourth aspect of the present invention, by using the polishing composition of the first or second aspect, by polishing a polishing object having a portion containing a Ge or SiGe material and a silicon material portion, A method for manufacturing a substrate is provided.
本発明によれば、ＩＶ族材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用したときにＩＶ族材料部分に対する高い研磨選択性を発揮することができる研磨用組成物と、その研磨用組成物を用いた研磨方法及び基板の製造方法とが提供される。 According to the present invention, a polishing composition capable of exhibiting high polishing selectivity for a group IV material part when used in an application for polishing an object to be polished having a group IV material part and a silicon material part, A polishing method and a substrate manufacturing method using the polishing composition are provided.
以下、本発明の第１の実施形態を説明する。
本実施形態の研磨用組成物は、特定の砥粒と、酸化剤を水に混合して調製される。従って、研磨用組成物は、特定の砥粒、及び酸化剤を含有する。
Hereinafter, a first embodiment of the present invention will be described.
The polishing composition of the present embodiment is prepared by mixing specific abrasive grains and an oxidizing agent in water. Accordingly, the polishing composition contains specific abrasive grains and an oxidizing agent.
この研磨用組成物は、ＩＶ族材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途、さらに言えばその研磨対象物を研磨して基板を製造する用途においてＩＶ族材料部分を選択的に研磨する目的で使用される。ＩＶ族化合物材料の例としては、シリコンゲルマニウム（ＳｉＧｅ）およびゲルマニウム（Ｇｅ）が挙げられる。また、ケイ素材料の例としては、ポリシリコン、酸化シリコン、窒化シリコン等が挙げられる。 This polishing composition is selectively used for polishing a polishing object having a group IV material portion and a silicon material portion, and more specifically, for polishing a polishing object and manufacturing a substrate. Used for polishing purposes. Examples of Group IV compound materials include silicon germanium (SiGe) and germanium (Ge). Examples of the silicon material include polysilicon, silicon oxide, silicon nitride, and the like.
（砥粒）
研磨用組成物中に含まれる砥粒は、４０ｎｍ以下の平均一次粒子径を有している。４０ｎｍ以下という平均一次粒子径の小さい砥粒を使用した場合、平均一次粒子径が４０ｎｍを超える砥粒を使用した場合に比べて、研磨用組成物によるケイ素材料部分の研磨速度が研磨用組成物によるＩＶ族材料部分の研磨速度よりも大きく低下するという有利がある。なお、砥粒の平均一次粒子径の値は、例えば、ＢＥＴ法で測定される砥粒の比表面積に基づいて計算することができる。
(Abrasive grains)
The abrasive grains contained in the polishing composition have an average primary particle size of 40 nm or less. When abrasive grains having a small average primary particle diameter of 40 nm or less are used, the polishing rate of the silicon material portion by the polishing composition is higher than that when abrasive grains having an average primary particle diameter exceeding 40 nm are used. There is an advantage that the polishing rate of the group IV material portion is greatly reduced. In addition, the value of the average primary particle diameter of an abrasive grain can be calculated based on the specific surface area of the abrasive grain measured by BET method, for example.
研磨用組成物中の砥粒は、無機粒子及び有機粒子のいずれであってもよい。無機粒子の具体例としては、シリカ、アルミナ、セリア、チタニアなどの金属酸化物からなる粒子が挙げられる。有機粒子の具体例としては、ポリメタクリル酸メチル（ＰＭＭＡ）粒子が挙げられる。その中でもシリカ粒子が好ましく、特に好ましいのはコロイダルシリカである。
研磨用組成物中の砥粒の含有量は、２０質量％以下であることが好ましく、より好ましくは１５質量％以下、さらに好ましくは１０質量％以下である。砥粒の含有量が少なくなるにつれて、研磨用組成物の材料コストを抑えることができるのに加え、砥粒の凝集が起こりにくくなる。
The abrasive grains in the polishing composition may be either inorganic particles or organic particles. Specific examples of the inorganic particles include particles made of a metal oxide such as silica, alumina, ceria, titania and the like. Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles. Among these, silica particles are preferable, and colloidal silica is particularly preferable.
The content of abrasive grains in the polishing composition is preferably 20% by mass or less, more preferably 15% by mass or less, and still more preferably 10% by mass or less. As the content of the abrasive grains decreases, the material cost of the polishing composition can be suppressed, and the aggregation of the abrasive grains is less likely to occur.
砥粒の平均二次粒子径は１７０ｎｍ以下であることが好ましく、より好ましくは１５０ｎｍ以下、さらに好ましくは１２０ｎｍ以下である。砥粒の平均二次粒子径が小さくなるにつれて、研磨用組成物を用いて研磨対象物を研磨することによりスクラッチのより少ない研磨面を得ることが容易になる。砥粒の平均二次粒子径の値は、例えば、レーザー光散乱法により測定することができる。 The average secondary particle diameter of the abrasive grains is preferably 170 nm or less, more preferably 150 nm or less, and still more preferably 120 nm or less. As the average secondary particle diameter of the abrasive grains decreases, it becomes easier to obtain a polished surface with less scratches by polishing the object to be polished using the polishing composition. The value of the average secondary particle diameter of the abrasive grains can be measured by, for example, a laser light scattering method.
（酸化剤）
研磨用組成物中に含まれる酸化剤の種類は特に限定されないが、０．３Ｖ以上の標準電極電位を有していることが好ましい。０．３Ｖ以上の標準電極電位を有する酸化剤を使用した場合には、０．３Ｖ未満の標準電極電位を有する酸化剤を使用した場合に比べて、研磨用組成物によるＩＶ族材料部分の研磨速度が向上するという有利がある。０．３Ｖ以上の標準電極電位を有する酸化剤の具体例としては、過酸化水素、過酸化ナトリウム、過酸化バリウム、有機酸化剤、オゾン水、銀（ Ｉ Ｉ ） 塩、鉄（ Ｉ Ｉ Ｉ ） 塩、並びに過マンガン酸、クロム酸、重クロム酸、ペルオキソ二硫酸、ペルオキソリン酸、ペルオキソ硫酸、ペルオキソホウ酸、過ギ酸、過酢酸、過安息香酸、過フタル酸、次亜塩素酸、次亜臭素酸、次亜ヨウ素酸、塩素酸、亜塩素酸、過塩素酸、臭素酸、ヨウ素酸、過ヨウ素酸、硫酸、過硫酸、クエン酸、ジクロロイソシアヌル酸及びそれらの塩等が挙げられる。これらの中でも、研磨用組成物によるＩＶ族材料部分の研磨速度が大きく向上することから、過酸化水素、過硫酸アンモニウム、次亜塩素酸、過ヨウ素酸、及びジクロロイソシアヌル酸ナトリウムが好ましい。
(Oxidant)
Although the kind of oxidizing agent contained in polishing composition is not specifically limited, It is preferable to have a standard electrode potential of 0.3V or more. When an oxidant having a standard electrode potential of 0.3 V or higher is used, polishing of a group IV material portion with the polishing composition is performed compared to when an oxidant having a standard electrode potential of less than 0.3 V is used. There is an advantage that the speed is improved. Specific examples of the oxidizing agent having a standard electrode potential of 0.3 V or more include hydrogen peroxide, sodium peroxide, barium peroxide, organic oxidizing agent, ozone water, silver (I I) salt, iron (I I I) Permanganate, chromic acid, dichromic acid, peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypochlorous acid Examples include bromic acid, hypoiodous acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, sulfuric acid, persulfuric acid, citric acid, dichloroisocyanuric acid, and salts thereof. Among these, hydrogen peroxide, ammonium persulfate, hypochlorous acid, periodic acid, and sodium dichloroisocyanurate are preferable because the polishing rate of the group IV material portion by the polishing composition is greatly improved.
なお、標準電極電位とは、酸化反応に関与するすべての化学種が標準状態にあるときに次式で表される。 The standard electrode potential is expressed by the following formula when all chemical species involved in the oxidation reaction are in the standard state.
Ｅ０＝−△Ｇ０／ｎＦ＝（ＲＴ／ｎＦ）ｌｎＫ E0 = −ΔG0 / nF = (RT / nF) lnK
ここで、Ｅ０は標準電極電位、△Ｇ０は酸化反応の標準ギブスエネルギー変化、Ｋはその平行定数、Ｆはファラデー定数、Ｔは絶対温度、ｎは酸化反応に関与する電子数である。従って、標準電極電位は温度により変動するので、本明細書中においては２５℃における標準電極電位を採用している。なお、水溶液系の標準電極電位は、例えば改訂４版化学便覧（基礎編）ＩＩ、ｐｐ４６４−４６８（日本化学会編）等に記載されている。 Here, E0 is the standard electrode potential, ΔG0 is the standard Gibbs energy change of the oxidation reaction, K is its parallel constant, F is the Faraday constant, T is the absolute temperature, and n is the number of electrons involved in the oxidation reaction. Accordingly, since the standard electrode potential varies depending on the temperature, the standard electrode potential at 25 ° C. is adopted in this specification. The standard electrode potential of the aqueous solution system is described in, for example, the revised 4th edition, Chemical Handbook (Basic Edition) II, pp 464-468 (Edited by Chemical Society of Japan).
研磨用組成物中の酸化剤の含有量は０．０１ｍｏｌ／Ｌ以上であることが好ましく、より好ましくは０．１ｍｏｌ／Ｌ以上である。酸化剤の含有量が多くなるにつれて、研磨用組成物によるＩＶ族材料部分の研磨速度が向上する。 The content of the oxidizing agent in the polishing composition is preferably 0.01 mol / L or more, more preferably 0.1 mol / L or more. As the content of the oxidizing agent increases, the polishing rate of the group IV material portion by the polishing composition is improved.
研磨用組成物中の酸化剤の含有量はまた、１００ｍｏｌ／Ｌ以下であることが好ましく、より好ましくは５０ｍｏｌ／Ｌ以下である。酸化剤の含有量が少なくなるにつれて、研磨用組成物の材料コストを抑えることができるのに加え、研磨使用後の研磨用組成物の処理、すなわち廃液処理の負荷を軽減することができる。 The content of the oxidizing agent in the polishing composition is also preferably 100 mol / L or less, more preferably 50 mol / L or less. As the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the load on the processing of the polishing composition after polishing, that is, the waste liquid treatment can be reduced.
（ｐＨ調整剤）
研磨用組成物のｐＨは中性であること、より具体的には５〜９の範囲内であることが好ましい。ｐＨが中性である場合には、研磨用組成物によるケイ素材料部分の研磨速度が低下するという有利がある。
(PH adjuster)
The pH of the polishing composition is preferably neutral, more specifically within the range of 5-9. When the pH is neutral, there is an advantage that the polishing rate of the silicon material portion by the polishing composition is decreased.
研磨用組成物のｐＨを所望の値に調整するのにｐＨ調整剤を使用してもよい。使用するｐＨ調整剤は酸及びアルカリのいずれであってもよく、また無機及び有機の化合物のいずれであってもよい。 A pH adjusting agent may be used to adjust the pH of the polishing composition to a desired value. The pH adjuster to be used may be either acid or alkali, and may be any of inorganic and organic compounds.
本実施形態によれば以下の作用効果が得られる。
・ 本実施形態の研磨用組成物では、研磨用組成物によるケイ素材料部分の研磨速度を低下させるために、４０ｎｍ以下という平均一次粒子径の小さい砥粒が使用されている。そのため、この研磨用組成物はＩＶ族材料部分に対する高い研磨選択性を有する。
・ 研磨用組成物のｐＨが中性である場合には、研磨用組成物によるケイ素材料部分の研磨速度がさらに低下するために、ＩＶ族材料部分に対する研磨用組成物の研磨選択性がさらに向上する。
According to this embodiment, the following effects can be obtained.
In the polishing composition of this embodiment, abrasive grains having a small average primary particle diameter of 40 nm or less are used in order to reduce the polishing rate of the silicon material portion by the polishing composition. Therefore, this polishing composition has high polishing selectivity for the group IV material portion.
・ When the polishing composition has a neutral pH, the polishing rate of the silicon material portion by the polishing composition is further reduced, so that the polishing selectivity of the polishing composition to the IV group material portion is further improved. To do.
以下、本発明の第２の実施形態を説明する。
第２の実施形態の研磨用組成物は、砥粒と酸化剤と加水分解抑制化合物を水に混合して調製される。従って、研磨用組成物は、砥粒、酸化剤及び加水分解抑制化合物を含有する。
Hereinafter, a second embodiment of the present invention will be described.
The polishing composition of the second embodiment is prepared by mixing abrasive grains, an oxidizing agent, and a hydrolysis inhibiting compound with water. Therefore, polishing composition contains an abrasive grain, an oxidizing agent, and a hydrolysis inhibiting compound.
第２の実施形態の研磨用組成物も、第１の実施形態の研磨用組成物と同様、シリコンゲルマニウムおよびゲルマニウムなどのＩＶ族材料部分と酸化シリコンなどのケイ素材料部分とを有する研磨対象物を研磨する用途、さらに言えばその研磨対象物を研磨して基板を製造する用途においてＩＶ族材料部分を選択的に研磨する目的で使用される。 Similarly to the polishing composition of the first embodiment, the polishing composition of the second embodiment is a polishing object having a group IV material portion such as silicon germanium and germanium and a silicon material portion such as silicon oxide. It is used for the purpose of selectively polishing a group IV material part in an application for polishing, more specifically, an application for polishing a polishing object to produce a substrate.
（砥粒）
第２の実施形態の研磨用組成物中に含まれる砥粒は、４０ｎｍ以下の平均一次粒子径を有している必要がなく、この点を除けば第１の実施形態の研磨用組成物中に含まれる砥粒と同じである。
(Abrasive grains)
The abrasive grains contained in the polishing composition of the second embodiment do not need to have an average primary particle size of 40 nm or less. Except for this point, the abrasive grains in the polishing composition of the first embodiment It is the same as the abrasive grains contained in.
（酸化剤）
第２の実施形態の研磨用組成物中に含まれる酸化剤は、第１の実施形態の研磨用組成物中に含まれる酸化剤と同じである。
(Oxidant)
The oxidizing agent contained in the polishing composition of the second embodiment is the same as the oxidizing agent contained in the polishing composition of the first embodiment.
（加水分解抑制化合物）
第２の実施形態の研磨用組成物中に含まれる加水分解抑制化合物は、ケイ素材料部分の表面ＯＨ基と結合してケイ素材料部分の加水分解を抑制する働きをする。詳細には、ケイ素材料部分の表面ＯＨ基と加水分解抑制化合物の持つ酸素原子の間で水素結合が形成されると考えられる。また、ケイ素材料部分の表面ＯＨ基と加水分解抑制化合物のもつ窒素原子との間で水素結合が形成されると考えられる。そのため、加水分解抑制化合物を使用した場合には、研磨用組成物によるケイ素材料部分の研磨速度が低下するという有利がある。このメカニズムを考えると、加水分解抑制化合物は酸素原子を持つ化合物及び窒素原子を持つ窒素含有化合物であることが好ましい。酸素原子を持つ加水分解抑制化合物の具体例としては、１−プロパノール、２−プロパノール、２−プロピン−１−オール、アリルアルコール、エチレンシアノヒドリン、１−ブタノール、２−ブタノール、（Ｓ）−（＋）−２−ブタノール、２−メチル−１−プロパノール、ｔ−ブチルアルコール、パーフルオロ−ｔ−ブチルアルコール、クロチルアルコール、１−ペンタノール、２，２−ジメチル−１−プロパノール、２−メチル−２−ブタノール、３−メチル−１−ブタノール、Ｓ−アミルアルコール、１−ヘキサノール、４−ヒドロキシ−４−メチル−２−ペンタノン、４−メチル−２−ペンタノール、シクロヘキサノール、ＤＬ−３−ヘキシルアルコール、１−ヘプタノール、２−エチルヘキシルアルコール、（Ｓ）−（＋）−２−オクタノール、１−オクタノール、ＤＬ−３−オクチルアルコール、２−ヒドロキシベンジルアルコール、２−ニトロベンジルアルコール、３，５−ジヒドロキシベンジルアルコール、３，５−ジニトロベンジルアルコール、３−フルオロベンジルアルコール、３−ヒドロキシベンジルアルコール、４−フルオロベンジルアルコール、４−ヒドロキシベンジルアルコール、ベンジルアルコール、ｍ−（トリフルオロメチル）ベンジルアルコール、ｍ−アミノベンジルアルコール、ｍ−ニトロベンジルアルコール、ｏ−アミノベンジルアルコール、ｏ−ヒドロキシベンジルアルコール、ｐ−ヒドロキシベンジルアルコール、ｐ−ニトロベンジルアルコール、２−（ｐ−フルオロフェニル）エタノール、２−アミノフェネチルアルコール、２−メトキシベンジルアルコール、２−メチル−３−ニトロベンジルアルコール、２−メチルベンジルアルコール、２−ニトロフェネチルアルコール、２−フェニルエタノール、３，４−ジメチルベンジルアルコール、３−メチル−２−ニトロベンジルアルコール、３−メチル−４−ニトロベンジルアルコール、３−メチルベンジルアルコール、４−フルオロフェネチルアルコール、４−ヒドロキシ−３−メトキシベンジルアルコール、４−メトキシベンジルアルコール、４−メチル−３−ニトロベンジルアルコール、５−メチル−２−ニトロベンジルアルコール、ＤＬ−α−ヒドロキシエチルベンゼン、ｏ−（トリフルオロメチル）ベンジルアルコール、ｐ−（トリフルオロメチル）ベンジルアルコール、ｐ−アミノフェネチルアルコール、ｐ−ヒドロキシフェニルエタノール、ｐ−メチルベンジルアルコール及びＳ−フェネチルアルコール、アセチレングリコール、等のアルコール、４−メチルフェノール、４−エチルフェノール及び４−プロピルフェノール等のフェノール、エチレングリコール、プロピレングリコール、カプリリルグリコール、ブチレングリコール、アセチレンジオールなどのグリコール、ｎ−デカノル−ｎ−メチル−Ｄ−グルカミン、ｎ−オクタノイル−ｎ−メチル−Ｄ−グルカミン、ｎ−ノナイノル−ｎ−メチル−Ｄ−グルカミンなどのグルカミン、グリセリンエステル、ソルビタンエステル、メトキシ酢酸、エトキシ酢酸、３−エトキシプロピオン酸、ポリオキシエチレン（以下、ＰＯＥという）ソルビタン脂肪酸エステル、ＰＯＥグリコール脂肪酸エステル、ＰＯＥヘキシタン脂肪酸エステル及びアラニンエチルエステル等のエステル、ポリエチレングリコール、ポリプロピレングリコール、ポリテトラメチレングリコール、ポリエチレングリコールアルキルエーテル、ポリエチレングリコールアルケニルエーテル、アルキルポリエチレングリコール、アルキルポリエチレングリコールアルキルエーテル、アルキルポリエチレングリコールアルケニルエーテル、アルケニルポリエチレングリコール、アルケニルポリエチレングリコールアルキルエーテル、アルケニルポリエチレングリコールアルケニルエーテル、ポリプロピレングリコールアルキルエーテル、ポリプロピレングリコールアルケニルエーテル、アルキルポリプロピレングリコール、アルキルポリプロピレングリコールアルキルエーテル、アルキルポリプロピレングリコールアルケニルエーテル、アルケニルポリプロピレングリコール、アルケニルポリプロピレングリコールアルキルエーテル及びアルケニルポリプロピレングリコールアルケニルエーテル、ＰＯＥアルキレンジグリセリルエーテル、ＰＯＥアルキルエーテル、ＰＯＥアルキルフェニルエーテル、ＰＯＥポリプロピレンアルキルエーテル等のエーテル、及びポリオキシプロピレン／ポリオキシエチレンのブロック／ランダムコポリマー等が挙げられる。
(Hydrolysis inhibiting compound)
The hydrolysis-inhibiting compound contained in the polishing composition of the second embodiment functions to inhibit the hydrolysis of the silicon material part by binding to the surface OH group of the silicon material part. Specifically, it is considered that a hydrogen bond is formed between the surface OH group of the silicon material portion and the oxygen atom of the hydrolysis inhibiting compound. Further, it is considered that a hydrogen bond is formed between the surface OH group of the silicon material portion and the nitrogen atom of the hydrolysis inhibiting compound. Therefore, when the hydrolysis inhibiting compound is used, there is an advantage that the polishing rate of the silicon material portion by the polishing composition is reduced. Considering this mechanism, the hydrolysis-inhibiting compound is preferably a compound having an oxygen atom and a nitrogen-containing compound having a nitrogen atom. Specific examples of the hydrolysis inhibiting compound having an oxygen atom include 1-propanol, 2-propanol, 2-propyn-1-ol, allyl alcohol, ethylene cyanohydrin, 1-butanol, 2-butanol, (S)-(+ ) -2-butanol, 2-methyl-1-propanol, t-butyl alcohol, perfluoro-t-butyl alcohol, crotyl alcohol, 1-pentanol, 2,2-dimethyl-1-propanol, 2-methyl- 2-butanol, 3-methyl-1-butanol, S-amyl alcohol, 1-hexanol, 4-hydroxy-4-methyl-2-pentanone, 4-methyl-2-pentanol, cyclohexanol, DL-3-hexyl Alcohol, 1-heptanol, 2-ethylhexyl alcohol, (S)-(+)-2 Octanol, 1-octanol, DL-3-octyl alcohol, 2-hydroxybenzyl alcohol, 2-nitrobenzyl alcohol, 3,5-dihydroxybenzyl alcohol, 3,5-dinitrobenzyl alcohol, 3-fluorobenzyl alcohol, 3-hydroxy Benzyl alcohol, 4-fluorobenzyl alcohol, 4-hydroxybenzyl alcohol, benzyl alcohol, m- (trifluoromethyl) benzyl alcohol, m-aminobenzyl alcohol, m-nitrobenzyl alcohol, o-aminobenzyl alcohol, o-hydroxybenzyl Alcohol, p-hydroxybenzyl alcohol, p-nitrobenzyl alcohol, 2- (p-fluorophenyl) ethanol, 2-aminophenethyl alcohol, 2- Toxibenzyl alcohol, 2-methyl-3-nitrobenzyl alcohol, 2-methylbenzyl alcohol, 2-nitrophenethyl alcohol, 2-phenylethanol, 3,4-dimethylbenzyl alcohol, 3-methyl-2-nitrobenzyl alcohol, 3 -Methyl-4-nitrobenzyl alcohol, 3-methylbenzyl alcohol, 4-fluorophenethyl alcohol, 4-hydroxy-3-methoxybenzyl alcohol, 4-methoxybenzyl alcohol, 4-methyl-3-nitrobenzyl alcohol, 5-methyl 2-nitrobenzyl alcohol, DL-α-hydroxyethylbenzene, o- (trifluoromethyl) benzyl alcohol, p- (trifluoromethyl) benzyl alcohol, p-aminophenethyl alcohol, p- Alcohols such as droxyphenylethanol, p-methylbenzyl alcohol and S-phenethyl alcohol, acetylene glycol, phenols such as 4-methylphenol, 4-ethylphenol and 4-propylphenol, ethylene glycol, propylene glycol, caprylyl glycol Glycols such as butylene glycol and acetylenic diol, glucamines such as n-decanol-n-methyl-D-glucamine, n-octanoyl-n-methyl-D-glucamine, n-nonainol-n-methyl-D-glucamine, glycerin Ester, sorbitan ester, methoxyacetic acid, ethoxyacetic acid, 3-ethoxypropionic acid, polyoxyethylene (hereinafter referred to as POE) sorbitan fatty acid ester, POE glycol fatty acid ester , Esters such as POE hexitan fatty acid ester and alanine ethyl ester, polyethylene glycol, polypropylene glycol, polytetramethylene glycol, polyethylene glycol alkyl ether, polyethylene glycol alkenyl ether, alkyl polyethylene glycol, alkyl polyethylene glycol alkyl ether, alkyl polyethylene glycol alkenyl ether, Alkenyl polyethylene glycol, alkenyl polyethylene glycol alkyl ether, alkenyl polyethylene glycol alkenyl ether, polypropylene glycol alkyl ether, polypropylene glycol alkenyl ether, alkyl polypropylene glycol, alkyl polypropylene glycol alkyl ether , Alkyl polypropylene glycol alkenyl ether, alkenyl polypropylene glycol, alkenyl polypropylene glycol alkyl ether and alkenyl polypropylene glycol alkenyl ether, ethers such as POE alkylene diglyceryl ether, POE alkyl ether, POE alkyl phenyl ether, POE polypropylene alkyl ether, and polyoxy Examples thereof include block / random copolymers of propylene / polyoxyethylene.
また、窒素原子を持つ加水分解抑制化合物の具体例としては、ビスヘキサメチレントリアミン（ＢＨＭＴ）、水酸化テトラメチルアンモニウム（ＴＭＡＨ）、テトラメチルアミン（ＴＭＡ）、テトラエチルアミン（ＴＥＡ）、ジメチルアミン、トリメチルアミン、トリエチルアミン、プロピレンジアミン、メチルアミン、エチルアミン、ピペラジン、ピペリジン等の水溶性アルキルアミン、水酸化コリン（ＣＨ）、トリエタノールアミン、ジエタノールアミン、エタノールアミン等のアミノアルコール類、エチレンジアミン四酢酸（ＥＤＴＡ）、ジエチルジチオカルバミン酸ナトリウム、キトサン等の水溶性アミン化合物が挙げられる。 Specific examples of hydrolysis inhibiting compounds having nitrogen atoms include bishexamethylenetriamine (BHMT), tetramethylammonium hydroxide (TMAH), tetramethylamine (TMA), tetraethylamine (TEA), dimethylamine, and trimethylamine. Water-soluble alkylamines such as triethylamine, propylenediamine, methylamine, ethylamine, piperazine, piperidine, choline hydroxide (CH), amino alcohols such as triethanolamine, diethanolamine, ethanolamine, ethylenediaminetetraacetic acid (EDTA), diethyl Water-soluble amine compounds such as sodium dithiocarbamate and chitosan are listed.
研磨用組成物中の加水分解抑制化合物の含有量は１０質量ｐｐｍ以上であることが好ましく、より好ましくは５０質量ｐｐｍ以上である。加水分解抑制化合物の含有量が多くなるにつれて、研磨用組成物によるケイ素材料部分の研磨速度が低下する。 The content of the hydrolysis inhibiting compound in the polishing composition is preferably 10 mass ppm or more, more preferably 50 mass ppm or more. As the content of the hydrolysis-inhibiting compound increases, the polishing rate of the silicon material portion by the polishing composition decreases.
研磨用組成物中の加水分解抑制化合物の含有量はまた、１０００００質量ｐｐｍ以下であることが好ましく、より好ましくは５００００質量ｐｐｍ以下である。加水分解抑制化合物の含有量が少なくなるにつれて、研磨用組成物の材料コストを抑えることができるのに加え、研磨使用後の研磨用組成物の処理、すなわち廃液処理の負荷を軽減することができる。 The content of the hydrolysis-inhibiting compound in the polishing composition is also preferably 100000 mass ppm or less, more preferably 50000 mass ppm or less. As the content of the hydrolysis-inhibiting compound decreases, the material cost of the polishing composition can be reduced, and the processing of the polishing composition after polishing, that is, the load of waste liquid treatment can be reduced. .
（ｐＨ調整剤）
第２の実施形態の研磨用組成物も、第１の実施形態の研磨用組成物と同様、中性であること、より具体的には５〜９の範囲内であることが好ましい。ｐＨが中性である場合には、研磨用組成物によるケイ素材料部分の研磨速度が低下するという有利がある。
(PH adjuster)
The polishing composition of the second embodiment is also preferably neutral, more specifically within the range of 5 to 9, like the polishing composition of the first embodiment. When the pH is neutral, there is an advantage that the polishing rate of the silicon material portion by the polishing composition is decreased.
第２の実施形態の研磨用組成物のｐＨを所望の値に調整するのにｐＨ調整剤を使用してもよい。使用するｐＨ調整剤は酸及びアルカリのいずれであってもよく、また無機及び有機の化合物のいずれであってもよい。 A pH adjusting agent may be used to adjust the pH of the polishing composition of the second embodiment to a desired value. The pH adjuster to be used may be either acid or alkali, and may be any of inorganic and organic compounds.
第２の実施形態によれば以下の作用効果が得られる。
・ 第２の実施形態の研磨用組成物では、研磨用組成物によるケイ素材料部分の研磨速度を低下させるために、加水分解抑制化合物が使用されている。そのため、この研磨用組成物はＩＶ族材料部分に対する高い研磨選択性を有する。
・ 研磨用組成物のｐＨが中性である場合には、研磨用組成物によるケイ素材料部分の研磨速度がさらに低下するために、ＩＶ族材料部分に対する研磨用組成物の研磨選択性がさらに向上する。
According to the second embodiment, the following effects can be obtained.
-In the polishing composition of 2nd Embodiment, in order to reduce the polishing rate of the silicon material part by polishing composition, the hydrolysis suppression compound is used. Therefore, this polishing composition has high polishing selectivity for the group IV material portion.
・ When the polishing composition has a neutral pH, the polishing rate of the silicon material portion by the polishing composition is further reduced, so that the polishing selectivity of the polishing composition to the IV group material portion is further improved. To do.
前記実施形態は次のように変更されてもよい。
・ 第１及び第２の実施形態の研磨用組成物は、二種類以上の砥粒を含有してもよい。第１の実施形態の研磨用組成物が二種類以上の砥粒を含有する場合、一部の砥粒については必ずしも４０ｎｍ以下の平均一次粒子径を有している必要はない。
・ 第１及び第２の実施形態の研磨用組成物は、二種類以上の酸化剤を含有してもよい。
・ 第２の実施形態の研磨用組成物は、二種類以上の加水分解抑制化合物を含有してもよい。
・ 第１の実施形態の研磨用組成物は、加水分解抑制化合物をさらに含有してもよい。この場合、研磨用組成物によるケイ素材料部分の研磨速度がさらに低下するために、ＩＶ族材料部分に対する研磨用組成物の研磨選択性がさらに向上する。
・ 前記実施形態の研磨用組成物は、防腐剤のような公知の添加剤を必要に応じてさらに含有してもよい。
・ 前記実施形態の研磨用組成物は一液型であってもよいし、二液型をはじめとする多液型であってもよい。
・ 前記実施形態の研磨用組成物は、研磨用組成物の原液を水で希釈することにより調製されてもよい。
The embodiment may be modified as follows.
-The polishing composition of 1st and 2nd embodiment may contain a 2 or more types of abrasive grain. When the polishing composition of the first embodiment contains two or more kinds of abrasive grains, some abrasive grains do not necessarily have an average primary particle diameter of 40 nm or less.
-The polishing composition of 1st and 2nd embodiment may contain a 2 or more types of oxidizing agent.
-The polishing composition of 2nd Embodiment may contain a 2 or more types of hydrolysis inhibiting compound.
-Polishing composition of 1st Embodiment may further contain a hydrolysis inhibiting compound. In this case, since the polishing rate of the silicon material portion by the polishing composition is further reduced, the polishing selectivity of the polishing composition with respect to the group IV material portion is further improved.
-Polishing composition of the said embodiment may further contain well-known additives like a preservative as needed.
The polishing composition of the above embodiment may be a one-component type or a multi-component type including a two-component type.
-The polishing composition of the said embodiment may be prepared by diluting the undiluted | stock solution of polishing composition with water.
次に、本発明の実施例及び比較例を説明する。
コロイダルシリカ及び酸化剤を、必要に応じて加水分解抑制化合物及びｐＨ調整剤とともに水と混合することにより、実施例１，３，５〜１７、参考例２，４及び比較例１〜２の研磨用組成物を調製した。各研磨用組成物中の成分の詳細、及び各研磨用組成物のｐＨを測定した結果を表１に示す。
Next, examples and comparative examples of the present invention will be described.
Polishing of Examples 1 , 3, 5 to 17 , Reference Examples 2 and 4, and Comparative Examples 1 and 2 by mixing colloidal silica and an oxidizing agent with water together with a hydrolysis inhibiting compound and a pH adjuster as necessary. A composition was prepared. The details of the components in each polishing composition and the results of measuring the pH of each polishing composition are shown in Table 1.
表１中、“Ｈ２Ｏ２”は過酸化水素を表し、“ＡＰＳ”は過硫酸アンモニウムを表す。ｐＨ調整は酢酸と水酸化カリウムで実施した。 In Table 1, “H 2 O 2 ” represents hydrogen peroxide, and “APS” represents ammonium persulfate. The pH was adjusted with acetic acid and potassium hydroxide.
実施例１，３，５〜１７、参考例２，４及び比較例１〜２の各研磨用組成物を用いて、シリコンゲルマニウムブランケットウェーハ、ゲルマニウムブランケットウェーハ、及びオルトケイ酸テトラエチル（ＴＥＯＳ）ブランケットウェーハの表面を、表２に記載の条件で研磨したときに求められる研磨速度の値を表３の“ＳｉＧｅの研磨速度”欄、“Ｇｅの研磨速度”欄、及び“ＴＥＯＳの研磨速度”欄に示す。研磨速度の値は、ＴＥＯＳブランケットウェーハについては光干渉式膜厚測定装置を用いて測定される研磨前後のウェーハの厚みの差を研磨時間で除することにより求め、シリコンゲルマニウムブランケットウェーハおよびゲルマニウムについては、研磨前後のウェーハの重量の差を密度と研磨時間で除することによって求めた。また、こうして求めた実施例１，３，５〜１７、参考例２，４及び比較例１〜２の各研磨用組成物によるシリコンゲルマニウムの研磨速度を同じ研磨用組成物によるＴＥＯＳの研磨速度で除して得られる値を表３の“ＳｉＧｅの研磨速度／ＴＥＯＳの研磨速度”欄に、ゲルマニウムの研磨速度を同じ研磨用組成物によるＴＥＯＳの研磨速度で除して得られる値を表３の“Ｇｅの研磨速度／ＴＥＯＳの研磨速度”欄に示す。ＴＥＯＳの研磨速度の値は、３００Å／ｍｉｎ以下の場合に合格レベルであるが、より好ましくは２００Å／ｍｉｎ以下、さらに好ましくは１００Å／ｍｉｎ以下である。シリコンゲルマニウムの研磨速度をＴＥＯＳの研磨速度で除した値は、５以上の場合に合格レベルであるが、より好ましくは１０以上、さらに好ましくは１５以上である。 Using each polishing composition of Examples 1 , 3, 5 to 17 , Reference Examples 2 and 4, and Comparative Examples 1 and 2, silicon germanium blanket wafer, germanium blanket wafer, and tetraethyl orthosilicate (TEOS) blanket wafer The values of the polishing rate required when the surface is polished under the conditions described in Table 2 are shown in the “SiGe polishing rate” column, the “Ge polishing rate” column, and the “TEOS polishing rate” column in Table 3. . For the TEOS blanket wafer, the value of the polishing rate is obtained by dividing the difference in wafer thickness before and after polishing measured by using an optical interference type film thickness measuring device by the polishing time, and for the silicon germanium blanket wafer and germanium. The difference in weight of the wafer before and after polishing was determined by dividing by the density and polishing time. Further, the polishing rate of silicon germanium by each of the polishing compositions of Examples 1 , 3, 5 to 17 , Reference Examples 2 and 4 and Comparative Examples 1 and 2 thus obtained was the same as the polishing rate of TEOS by the same polishing composition. The value obtained by dividing the value obtained by dividing the value obtained by dividing the polishing rate of germanium by the polishing rate of TEOS by the same polishing composition in the column “SiGe polishing rate / TEOS polishing rate” in Table 3. This is shown in the column “Ge polishing rate / TEOS polishing rate”. The TEOS polishing rate is acceptable when it is 300 Å / min or less, more preferably 200 Å / min or less, and even more preferably 100 Å / min or less. The value obtained by dividing the polishing rate of silicon germanium by the polishing rate of TEOS is a pass level when it is 5 or more, more preferably 10 or more, and still more preferably 15 or more.
表３に示すように、実施例１，３，５〜１７、参考例２，４の研磨用組成物の場合には、ＳｉＧｅの研磨速度をＴＥＯＳの研磨速度除した値が５以上、Ｇｅの研磨速度をＴＥＯＳの研磨速度除した値が１０以上、であり、ＩＶ族材料部分を選択的に研磨する目的で満足に使用できるレベルの結果が得られた。特に、ｐＨを７に調整した実施例１、３、５〜１６はＳｉＧｅの研磨速度をＴＥＯＳの研磨速度除した値、およびＧｅの研磨速度をＴＥＯＳの研磨速度除した値が共に１０以上であり、特に好ましい。 As shown in Table 3, in the case of the polishing compositions of Examples 1 , 3, 5 to 17 and Reference Examples 2 and 4 , the value obtained by dividing the polishing rate of SiGe by the polishing rate of TEOS is 5 or more. The value obtained by dividing the polishing rate by the TEOS polishing rate is 10 or more, and a result that can be satisfactorily used for the purpose of selectively polishing the group IV material portion was obtained. In particular, in Examples 1, 3, and 5 to 16 in which the pH was adjusted to 7, the value obtained by dividing the SiGe polishing rate by the TEOS polishing rate and the value obtained by dividing the Ge polishing rate by the TEOS polishing rate were both 10 or more. Is particularly preferred.
これに対し、比較例１の研磨用組成物の場合には、シリコンゲルマニウムの研磨速度をＴＥＯＳの研磨速度で除した値が５以下で合格レベルに達しておらず、ＩＶ族材料部分を選択的に研磨する目的で満足に使用できるレベルの結果が得られなかった。 On the other hand, in the case of the polishing composition of Comparative Example 1, the value obtained by dividing the polishing rate of silicon germanium by the polishing rate of TEOS was 5 or less and did not reach the acceptable level, and the group IV material portion was selectively used. However, a satisfactory result could not be obtained for the purpose of polishing.
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| TW101143736A TWI567182B (en) | 2011-11-25 | 2012-11-22 | Polishing composition |
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