FR2859043B1 - PERMANENT MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Google Patents

PERMANENT MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Info

Publication number
FR2859043B1
FR2859043B1 FR0409013A FR0409013A FR2859043B1 FR 2859043 B1 FR2859043 B1 FR 2859043B1 FR 0409013 A FR0409013 A FR 0409013A FR 0409013 A FR0409013 A FR 0409013A FR 2859043 B1 FR2859043 B1 FR 2859043B1
Authority
FR
France
Prior art keywords
manufacturing
same
memory device
magnetic memory
permanent magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0409013A
Other languages
French (fr)
Other versions
FR2859043A1 (en
Inventor
Hiroshi Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2859043A1 publication Critical patent/FR2859043A1/en
Application granted granted Critical
Publication of FR2859043B1 publication Critical patent/FR2859043B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
FR0409013A 2003-08-21 2004-08-20 PERMANENT MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Expired - Fee Related FR2859043B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003297593A JP2005072139A (en) 2003-08-21 2003-08-21 Magnetic storage and its manufacturing method

Publications (2)

Publication Number Publication Date
FR2859043A1 FR2859043A1 (en) 2005-02-25
FR2859043B1 true FR2859043B1 (en) 2007-12-07

Family

ID=34114157

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0409013A Expired - Fee Related FR2859043B1 (en) 2003-08-21 2004-08-20 PERMANENT MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Country Status (5)

Country Link
US (1) US7352041B2 (en)
JP (1) JP2005072139A (en)
KR (1) KR20050020694A (en)
FR (1) FR2859043B1 (en)
TW (1) TWI289911B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828639B2 (en) * 2002-07-17 2004-12-07 Micron Technology, Inc. Process flow for building MRAM structures
US7543211B2 (en) * 2005-01-31 2009-06-02 Everspin Technologies, Inc. Toggle memory burst
KR100691004B1 (en) * 2005-04-15 2007-03-09 주식회사 하이닉스반도체 Method of forming capacitor of semiconductor device
JP5163638B2 (en) * 2007-03-07 2013-03-13 日本電気株式会社 Magnetic body device and magnetic storage device
US20090117285A1 (en) * 2007-08-08 2009-05-07 Dinderman Michael A ROOM TEMPERATURE ELECTROLESS IRON BATH OPERATING WITHOUT A GALVANIC COUPLE FOR DEPOSITION OF FERROMAGNETIC AMORPHOUS FeB FILMS
US20090218644A1 (en) * 2008-02-29 2009-09-03 Gill Yong Lee Integrated Circuit, Memory Device, and Method of Manufacturing an Integrated Circuit
JP2009290073A (en) * 2008-05-30 2009-12-10 Renesas Technology Corp Semiconductor device and manufacturing method thereof
US8273582B2 (en) * 2009-07-09 2012-09-25 Crocus Technologies Method for use in making electronic devices having thin-film magnetic components
US8461043B2 (en) 2011-04-11 2013-06-11 Micron Technology, Inc. Barrier layer for integrated circuit contacts
KR101998676B1 (en) * 2012-07-20 2019-07-10 삼성전자주식회사 Magnetic Memory Device and Method of fabricating the same
US8901687B2 (en) 2012-11-27 2014-12-02 Industrial Technology Research Institute Magnetic device with a substrate, a sensing block and a repair layer
CN103887422A (en) * 2012-12-20 2014-06-25 中芯国际集成电路制造(上海)有限公司 Magnetic random access memory and formation method thereof
JP6169500B2 (en) * 2014-01-31 2017-07-26 東京エレクトロン株式会社 Electroless plating method, electroless plating apparatus and storage medium
US9412935B1 (en) * 2015-09-07 2016-08-09 Yeu-Chung LIN Method for fabricating magnetic tunnel junction and 3-D magnetic tunnel junction array
US9614003B1 (en) * 2015-10-21 2017-04-04 Globalfoundries Inc. Method of forming a memory device structure and memory device structure
US9893120B2 (en) * 2016-04-15 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US20180138292A1 (en) * 2016-11-11 2018-05-17 Sandisk Technologies Llc Methods and apparatus for three-dimensional nonvolatile memory
JP2018129374A (en) * 2017-02-07 2018-08-16 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device and manufacturing method thereof
DE102018108545B4 (en) * 2017-11-30 2021-05-20 Taiwan Semiconductor Manufacturing Co. Ltd. MAGNETIC DIRECT ACCESS MEMORY AND MANUFACTURING PROCESS FOR IT
US11024801B2 (en) 2018-06-27 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Diffusion layer for magnetic tunnel junctions
CN113506669A (en) * 2021-06-07 2021-10-15 日月光半导体制造股份有限公司 Semiconductor package device and method of manufacturing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6153443A (en) * 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
JP2001164375A (en) * 1999-12-03 2001-06-19 Sony Corp Electroless plating bath and method for depositing electrically conductive film
JP2001355074A (en) * 2000-04-10 2001-12-25 Sony Corp Electroless plating method, and apparatus thereof
US20020081842A1 (en) * 2000-04-14 2002-06-27 Sambucetti Carlos J. Electroless metal liner formation methods
US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
JP3944437B2 (en) * 2001-10-05 2007-07-11 株式会社半導体理工学研究センター Electroless plating method, method for forming embedded wiring, and embedded wiring
JP3567377B2 (en) * 2002-01-09 2004-09-22 独立行政法人 科学技術振興機構 Method for manufacturing semiconductor integrated circuit device
JP4157707B2 (en) * 2002-01-16 2008-10-01 株式会社東芝 Magnetic memory
JP2003297593A (en) 2002-03-28 2003-10-17 Mitsubishi Electric Corp Discharge lamp lighting device
US6943038B2 (en) * 2002-12-19 2005-09-13 Freescale Semiconductor, Inc. Method for fabricating a flux concentrating system for use in a magnetoelectronics device
US6798004B1 (en) * 2003-04-22 2004-09-28 Freescale Semiconductor, Inc. Magnetoresistive random access memory devices and methods for fabricating the same
JP2005005605A (en) * 2003-06-13 2005-01-06 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
TW200518279A (en) 2005-06-01
JP2005072139A (en) 2005-03-17
US20050052938A1 (en) 2005-03-10
US7352041B2 (en) 2008-04-01
KR20050020694A (en) 2005-03-04
FR2859043A1 (en) 2005-02-25
TWI289911B (en) 2007-11-11

Similar Documents

Publication Publication Date Title
FR2859043B1 (en) PERMANENT MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
FR2870626B1 (en) MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
FR2849696B1 (en) SPECIMEN MANUFACTURING DEVICE AND SPECIMEN MANUFACTURING METHOD
FR2866977B1 (en) RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
FR2855640B1 (en) SECURITY DOCUMENT AND METHOD FOR MANUFACTURING THE SAME
FR2864706B1 (en) ORGANIC ELECTROLUMNINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI351033B (en) Magnetic memory device
DE602004008978D1 (en) Device with superconducting magnet
EP1580821A4 (en) Magnetoresistance effect element, magnetic memory element, magnetic memory device, and their manufacturing method
FR2888994B1 (en) RADIOFREQUENCY DEVICE WITH MAGNETIC ELEMENT AND METHOD FOR MANUFACTURING SUCH A MAGNETIC ELEMENT
FR2860645B1 (en) MAGNETORESISTANCE EFFECT ELEMENT, METHOD FOR MANUFACTURING THE SAME, MAGNETIC MEMORY, AND PROCESS FOR MANUFACTURING THE SAME
AU2003294352A8 (en) Magnetic memory element and memory device including same
EP1628329A4 (en) Exposure device and device manufacturing method
FR2853067B1 (en) MAGNETIC SENSOR ADJUSTING METHOD, MAGNETIC SENSOR ADJUSTING DEVICE, AND MAGNETIC SENSOR
FR2900484B3 (en) RADIOFREQUENCY IDENTIFICATION DEVICE SUPPORT AND METHOD FOR MANUFACTURING THE SAME
FR2889891B1 (en) HOUSING CROSSING AND METHOD FOR MANUFACTURING THE SAME
FR2902566B1 (en) DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME.
EP1575088A4 (en) Magnetic memory device
BR0316812B1 (en) Intimate clothing and its mounting method.
FR2848128B1 (en) MAGNETIC DISEMBLING DEVICE
FI20031570A0 (en) Alarm with electronic device
DE60323801D1 (en) Magnetic memory device, manufacturing method and read / write method
FR2860594B1 (en) MAGNETOMETER WITH OPEN MAGNETIC CIRCUIT AND METHOD FOR PRODUCING THE SAME
FR2900485B3 (en) RADIOFREQUENCY IDENTIFICATION DEVICE SUPPORT AND METHOD FOR MANUFACTURING THE SAME
DE602004018281D1 (en) ANTENNA DEVICE AND ANTENNA DEVICE MANUFACTURING METHOD

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140430