FR2857496B1 - Dispositif a memoire, notamment a memoire flash, et procede pour son fonctionnement - Google Patents

Dispositif a memoire, notamment a memoire flash, et procede pour son fonctionnement

Info

Publication number
FR2857496B1
FR2857496B1 FR0407707A FR0407707A FR2857496B1 FR 2857496 B1 FR2857496 B1 FR 2857496B1 FR 0407707 A FR0407707 A FR 0407707A FR 0407707 A FR0407707 A FR 0407707A FR 2857496 B1 FR2857496 B1 FR 2857496B1
Authority
FR
France
Prior art keywords
operating
same
memory device
particular flash
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0407707A
Other languages
English (en)
Other versions
FR2857496A1 (fr
Inventor
Hwi Taek Chung
Byeong Hoon Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2857496A1 publication Critical patent/FR2857496A1/fr
Application granted granted Critical
Publication of FR2857496B1 publication Critical patent/FR2857496B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
FR0407707A 2003-07-12 2004-07-09 Dispositif a memoire, notamment a memoire flash, et procede pour son fonctionnement Active FR2857496B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10347541 2003-07-12

Publications (2)

Publication Number Publication Date
FR2857496A1 FR2857496A1 (fr) 2005-01-14
FR2857496B1 true FR2857496B1 (fr) 2007-01-26

Family

ID=34399483

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0407707A Active FR2857496B1 (fr) 2003-07-12 2004-07-09 Dispositif a memoire, notamment a memoire flash, et procede pour son fonctionnement

Country Status (1)

Country Link
FR (1) FR2857496B1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506816A (en) * 1994-09-06 1996-04-09 Nvx Corporation Memory cell array having compact word line arrangement
US5621690A (en) * 1995-04-28 1997-04-15 Intel Corporation Nonvolatile memory blocking architecture and redundancy
US5854770A (en) * 1997-01-30 1998-12-29 Sgs-Thomson Microelectronics S.R.L. Decoding hierarchical architecture for high integration memories

Also Published As

Publication number Publication date
FR2857496A1 (fr) 2005-01-14

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