FR2851371B1 - Procede de reparation d'un circuit electronique integre comprenant la realisation d'une isolation electrique - Google Patents

Procede de reparation d'un circuit electronique integre comprenant la realisation d'une isolation electrique

Info

Publication number
FR2851371B1
FR2851371B1 FR0301937A FR0301937A FR2851371B1 FR 2851371 B1 FR2851371 B1 FR 2851371B1 FR 0301937 A FR0301937 A FR 0301937A FR 0301937 A FR0301937 A FR 0301937A FR 2851371 B1 FR2851371 B1 FR 2851371B1
Authority
FR
France
Prior art keywords
repairing
production
electronic circuit
electrical insulation
integrated electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0301937A
Other languages
English (en)
Other versions
FR2851371A1 (fr
Inventor
Jean Pierre Schoellkopf
Herve Jaouen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0301937A priority Critical patent/FR2851371B1/fr
Priority to US10/778,323 priority patent/US7029927B2/en
Publication of FR2851371A1 publication Critical patent/FR2851371A1/fr
Application granted granted Critical
Publication of FR2851371B1 publication Critical patent/FR2851371B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR0301937A 2003-02-18 2003-02-18 Procede de reparation d'un circuit electronique integre comprenant la realisation d'une isolation electrique Expired - Fee Related FR2851371B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0301937A FR2851371B1 (fr) 2003-02-18 2003-02-18 Procede de reparation d'un circuit electronique integre comprenant la realisation d'une isolation electrique
US10/778,323 US7029927B2 (en) 2003-02-18 2004-02-13 Method of repairing an integrated electronic circuit using a formed electrical isolation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0301937A FR2851371B1 (fr) 2003-02-18 2003-02-18 Procede de reparation d'un circuit electronique integre comprenant la realisation d'une isolation electrique

Publications (2)

Publication Number Publication Date
FR2851371A1 FR2851371A1 (fr) 2004-08-20
FR2851371B1 true FR2851371B1 (fr) 2005-06-03

Family

ID=32749640

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0301937A Expired - Fee Related FR2851371B1 (fr) 2003-02-18 2003-02-18 Procede de reparation d'un circuit electronique integre comprenant la realisation d'une isolation electrique

Country Status (2)

Country Link
US (1) US7029927B2 (fr)
FR (1) FR2851371B1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137804A1 (de) * 1981-09-23 1983-03-31 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung von 3-alkyl-3-acyloxy-4-hydroxy-1-butenen
US4466992A (en) * 1982-05-28 1984-08-21 Phillips Petroleum Company Healing pinhole defects in amorphous silicon films
US5230970A (en) * 1985-05-20 1993-07-27 At&T Bell Laboratories Method of forming metal regions
AU583423B2 (en) * 1985-09-21 1989-04-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
US6475904B2 (en) * 1998-12-03 2002-11-05 Advanced Micro Devices, Inc. Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
KR100382456B1 (ko) * 2000-05-01 2003-05-01 엘지.필립스 엘시디 주식회사 액정표시장치의 리페어 패턴 형성방법

Also Published As

Publication number Publication date
US20040217305A1 (en) 2004-11-04
US7029927B2 (en) 2006-04-18
FR2851371A1 (fr) 2004-08-20

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091030