FR2850461B1 - Procede et appareil pour realiser un substrat pour semi-conducteur ou similaire - Google Patents

Procede et appareil pour realiser un substrat pour semi-conducteur ou similaire

Info

Publication number
FR2850461B1
FR2850461B1 FR0350894A FR0350894A FR2850461B1 FR 2850461 B1 FR2850461 B1 FR 2850461B1 FR 0350894 A FR0350894 A FR 0350894A FR 0350894 A FR0350894 A FR 0350894A FR 2850461 B1 FR2850461 B1 FR 2850461B1
Authority
FR
France
Prior art keywords
semiconductor
making
similar substrate
substrate
similar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0350894A
Other languages
English (en)
Other versions
FR2850461A1 (fr
Inventor
Yoshio Takami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced LCD Technologies Development Center Co Ltd
Original Assignee
Advanced LCD Technologies Development Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced LCD Technologies Development Center Co Ltd filed Critical Advanced LCD Technologies Development Center Co Ltd
Publication of FR2850461A1 publication Critical patent/FR2850461A1/fr
Application granted granted Critical
Publication of FR2850461B1 publication Critical patent/FR2850461B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Recrystallisation Techniques (AREA)
FR0350894A 2002-11-25 2003-11-24 Procede et appareil pour realiser un substrat pour semi-conducteur ou similaire Expired - Fee Related FR2850461B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002341330 2002-11-25

Publications (2)

Publication Number Publication Date
FR2850461A1 FR2850461A1 (fr) 2004-07-30
FR2850461B1 true FR2850461B1 (fr) 2007-10-19

Family

ID=32310635

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0350894A Expired - Fee Related FR2850461B1 (fr) 2002-11-25 2003-11-24 Procede et appareil pour realiser un substrat pour semi-conducteur ou similaire

Country Status (3)

Country Link
US (2) US7130048B2 (fr)
DE (1) DE10353901A1 (fr)
FR (1) FR2850461B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法
KR100587368B1 (ko) * 2003-06-30 2006-06-08 엘지.필립스 엘시디 주식회사 Ｓｌｓ 결정화 장치
US8138058B2 (en) * 2006-11-24 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Substrate with marker, manufacturing method thereof, laser irradiation apparatus, laser irradiation method, light exposure apparatus, and manufacturing method of semiconductor device
US8315526B2 (en) * 2007-06-18 2012-11-20 Hewlett-Packard Development Company, L.P. Misalignment tolerant free space optical transceiver
US9970845B2 (en) * 2016-02-10 2018-05-15 Apple Inc. Interrogating DOE integrity by reverse illumination
US10008418B2 (en) * 2016-09-30 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of semiconductor integrated circuit fabrication
TWI787263B (zh) * 2017-05-24 2022-12-21 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3693025A (en) * 1969-11-28 1972-09-19 Brun Sensor Systems Inc Apparatus and method for eliminating interference errors in dual-beam infrared reflection measurements on a diffusely reflecting surface by geometrical elimination of interference-producing specularly-reflected radiation components
US4141780A (en) * 1977-12-19 1979-02-27 Rca Corporation Optically monitoring the thickness of a depositing layer
US4431914A (en) * 1981-08-27 1984-02-14 The University Of Rochester Photoelectron switching in semiconductors in the picosecond time domain
US4641312A (en) * 1983-05-10 1987-02-03 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Method and device for producing individual short laser pulses
DE3884490T2 (de) * 1987-07-14 1994-01-27 Hamamatsu Photonics Kk Einrichtung zum Abtasten, Analysieren und Anzeigen eines elektrischen Signals.
JPS6425044A (en) * 1987-07-21 1989-01-27 Nippon Steel Corp Flaw detecting method for hot surface
JPH01259266A (ja) * 1988-04-08 1989-10-16 Hamamatsu Photonics Kk 電圧測定装置
JPH06103252B2 (ja) * 1989-05-04 1994-12-14 サーマ―ウェイブ・インク 高分解能エリプソメータ装置と方法
US6327374B1 (en) * 1999-02-18 2001-12-04 Thermo Radiometrie Oy Arrangement and method for inspection of surface quality
US6782337B2 (en) * 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen

Also Published As

Publication number Publication date
US20070008542A1 (en) 2007-01-11
DE10353901A1 (de) 2004-06-09
FR2850461A1 (fr) 2004-07-30
US7307727B2 (en) 2007-12-11
US20040105096A1 (en) 2004-06-03
US7130048B2 (en) 2006-10-31

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100730