FR2843487B1 - Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee - Google Patents
Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associeeInfo
- Publication number
- FR2843487B1 FR2843487B1 FR0210209A FR0210209A FR2843487B1 FR 2843487 B1 FR2843487 B1 FR 2843487B1 FR 0210209 A FR0210209 A FR 0210209A FR 0210209 A FR0210209 A FR 0210209A FR 2843487 B1 FR2843487 B1 FR 2843487B1
- Authority
- FR
- France
- Prior art keywords
- thin layer
- correction step
- sacrificial oxidation
- thickness correction
- associated machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0210209A FR2843487B1 (fr) | 2002-08-12 | 2002-08-12 | Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee |
US10/637,094 US20040087042A1 (en) | 2002-08-12 | 2003-08-06 | Method and apparatus for adjusting the thickness of a layer of semiconductor material |
US10/637,078 US6908774B2 (en) | 2002-08-12 | 2003-08-06 | Method and apparatus for adjusting the thickness of a thin layer of semiconductor material |
AT03784416T ATE484847T1 (de) | 2002-08-12 | 2003-08-11 | Verfahren zur herstellung einer dünnen schicht, einschliesslich eines schrittes des korrigierens der dicke durch hilfsoxidation und zugehörige vorrichtung |
EP10155844A EP2190010A2 (fr) | 2002-08-12 | 2003-08-11 | Procédé de préparation d'une fine couche de matériau semi-conducteur |
DE60334555T DE60334555D1 (de) | 2002-08-12 | 2003-08-11 | Verfahren zur herstellung einer dünnen schicht, einschliesslich eines schrittes des korrigierens der dicke durch hilfsoxidation und zugehörige vorrichtung |
JP2004527229A JP4684650B2 (ja) | 2002-08-12 | 2003-08-11 | 薄層を形成する方法、犠牲酸化によって厚みを補正するステップを含む方法、及び関連する機械 |
AU2003263391A AU2003263391A1 (en) | 2002-08-12 | 2003-08-11 | A method of preparing a thin layer, the method including a step of correcting thickness by sacrificial oxidation, and an associated machine |
PCT/IB2003/003640 WO2004015759A2 (fr) | 2002-08-12 | 2003-08-11 | Procede de preparation d'une couche mince, ledit procede comprenant une etape de correction de l'epaisseur par oxydation sacrificielle et machine associee |
EP03784416A EP1547143B1 (fr) | 2002-08-12 | 2003-08-11 | Procede de preparation d'une couche mince, ledit procede comprenant une etape de correction de l'epaisseur par oxydation sacrificielle et machine associee |
TW092122092A TWI298919B (en) | 2002-08-12 | 2003-08-12 | A method of preparing a thin layer, the method including a step of correcting thickness by sacrificial oxidation, and an associated machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0210209A FR2843487B1 (fr) | 2002-08-12 | 2002-08-12 | Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2843487A1 FR2843487A1 (fr) | 2004-02-13 |
FR2843487B1 true FR2843487B1 (fr) | 2005-10-14 |
Family
ID=30471070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0210209A Expired - Lifetime FR2843487B1 (fr) | 2002-08-12 | 2002-08-12 | Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2843487B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3034565B1 (fr) | 2015-03-30 | 2017-03-31 | Soitec Silicon On Insulator | Procede de fabrication d'une structure presentant une couche dielectrique enterree d'epaisseur uniforme |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW346649B (en) * | 1996-09-24 | 1998-12-01 | Tokyo Electron Co Ltd | Method for wet etching a film |
US6111634A (en) * | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
TW455973B (en) * | 1999-04-05 | 2001-09-21 | Applied Materials Inc | Endpoint detection in the fabrication of electronic devices |
FR2797714B1 (fr) * | 1999-08-20 | 2001-10-26 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
US6917419B2 (en) * | 2000-09-20 | 2005-07-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen |
-
2002
- 2002-08-12 FR FR0210209A patent/FR2843487B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2843487A1 (fr) | 2004-02-13 |
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Legal Events
Date | Code | Title | Description |
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CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20120423 |
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PLFP | Fee payment |
Year of fee payment: 15 |
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PLFP | Fee payment |
Year of fee payment: 16 |
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PLFP | Fee payment |
Year of fee payment: 17 |
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PLFP | Fee payment |
Year of fee payment: 18 |
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PLFP | Fee payment |
Year of fee payment: 19 |
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PLFP | Fee payment |
Year of fee payment: 20 |