FR2839380B1 - Minimisation d'erreurs dans un dispositif de memorisation a semi-conducteurs magnetoresistif - Google Patents

Minimisation d'erreurs dans un dispositif de memorisation a semi-conducteurs magnetoresistif

Info

Publication number
FR2839380B1
FR2839380B1 FR0304960A FR0304960A FR2839380B1 FR 2839380 B1 FR2839380 B1 FR 2839380B1 FR 0304960 A FR0304960 A FR 0304960A FR 0304960 A FR0304960 A FR 0304960A FR 2839380 B1 FR2839380 B1 FR 2839380B1
Authority
FR
France
Prior art keywords
minimizing errors
memorization device
magnetoresistive semiconductor
magnetoresistive
memorization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0304960A
Other languages
English (en)
French (fr)
Other versions
FR2839380A1 (fr
Inventor
Terrel R Munden
Sarah M Brandenberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of FR2839380A1 publication Critical patent/FR2839380A1/fr
Application granted granted Critical
Publication of FR2839380B1 publication Critical patent/FR2839380B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
FR0304960A 2002-05-01 2003-04-23 Minimisation d'erreurs dans un dispositif de memorisation a semi-conducteurs magnetoresistif Expired - Lifetime FR2839380B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/138,074 US6762952B2 (en) 2002-05-01 2002-05-01 Minimizing errors in a magnetoresistive solid-state storage device

Publications (2)

Publication Number Publication Date
FR2839380A1 FR2839380A1 (fr) 2003-11-07
FR2839380B1 true FR2839380B1 (fr) 2005-11-04

Family

ID=29249762

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0304960A Expired - Lifetime FR2839380B1 (fr) 2002-05-01 2003-04-23 Minimisation d'erreurs dans un dispositif de memorisation a semi-conducteurs magnetoresistif

Country Status (3)

Country Link
US (1) US6762952B2 (enExample)
JP (1) JP2004030884A (enExample)
FR (1) FR2839380B1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988087B1 (ko) * 2003-11-24 2010-10-18 삼성전자주식회사 Ｍｒａｍ 특성 분석 장치 및 그 분석 방법
US7027323B2 (en) * 2004-04-02 2006-04-11 Hewlett-Packard Development Company, L.P. Storage device having parallel connected memory cells that include magnetoresistive elements
US7362549B2 (en) * 2004-05-19 2008-04-22 Seagate Technology Llc Storage device having first and second magnetic elements that interact magnetically to indicate a storage state
EP1849162A4 (en) * 2005-01-25 2009-02-11 Northern Lights Semiconductor SINGLE CHIP WITH A MAGNETORESISTIVE MEMORY
JP2008090451A (ja) * 2006-09-29 2008-04-17 Toshiba Corp 記憶装置
US20080198674A1 (en) * 2007-02-21 2008-08-21 Jan Keller Method of testing an integrated circuit, method of determining defect resistivity changing cells, testing device, and computer program adapted to perform a method for testing an integrated circuit
US8406033B2 (en) * 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
WO2011030410A1 (ja) * 2009-09-09 2011-03-17 株式会社 東芝 メモリ装置
US8634235B2 (en) 2010-06-25 2014-01-21 Macronix International Co., Ltd. Phase change memory coding
US8374019B2 (en) 2011-01-05 2013-02-12 Macronix International Co., Ltd. Phase change memory with fast write characteristics
US8891293B2 (en) 2011-06-23 2014-11-18 Macronix International Co., Ltd. High-endurance phase change memory devices and methods for operating the same
US8923041B2 (en) 2012-04-11 2014-12-30 Everspin Technologies, Inc. Self-referenced sense amplifier for spin torque MRAM
US9001550B2 (en) 2012-04-27 2015-04-07 Macronix International Co., Ltd. Blocking current leakage in a memory array
US8964442B2 (en) 2013-01-14 2015-02-24 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US9552244B2 (en) * 2014-01-08 2017-01-24 Qualcomm Incorporated Real time correction of bit failure in resistive memory
US9779810B2 (en) 2015-09-11 2017-10-03 Macronix International Co., Ltd. Adjustable writing circuit
US10817392B1 (en) * 2017-11-01 2020-10-27 Pure Storage, Inc. Ensuring resiliency to storage device failures in a storage system that includes a plurality of storage devices
JP2022050059A (ja) 2020-09-17 2022-03-30 キオクシア株式会社 磁気記憶装置及びメモリシステム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2870523B2 (ja) * 1997-06-25 1999-03-17 日本電気株式会社 メモリモジュール
US6011734A (en) * 1998-03-12 2000-01-04 Motorola, Inc. Fuseless memory repair system and method of operation
US6910152B2 (en) * 1998-08-28 2005-06-21 Micron Technology, Inc. Device and method for repairing a semiconductor memory
US5953269A (en) * 1998-09-03 1999-09-14 Micron Technology, Inc. Method and apparatus for remapping addresses for redundancy
US6041000A (en) * 1998-10-30 2000-03-21 Stmicroelectronics, Inc. Initialization for fuse control
US6154413A (en) * 1999-04-05 2000-11-28 Longwell; Michael L. Method for designing a memory tile for use in a tiled memory
US6297983B1 (en) * 2000-02-29 2001-10-02 Hewlett-Packard Company Reference layer structure in a magnetic storage cell
DE10043218C2 (de) * 2000-09-01 2003-04-24 Infineon Technologies Ag Schaltungsanordnung und Verfahren zur Alterungsbeschleunigung bei einem MRAM
JP3667244B2 (ja) * 2001-03-19 2005-07-06 キヤノン株式会社 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法
JP5119563B2 (ja) * 2001-08-03 2013-01-16 日本電気株式会社 不良メモリセル救済回路を有する半導体記憶装置
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6906396B2 (en) * 2002-01-15 2005-06-14 Micron Technology, Inc. Magnetic shield for integrated circuit packaging
US6735111B2 (en) * 2002-01-16 2004-05-11 Micron Technology, Inc. Magnetoresistive memory devices and assemblies

Also Published As

Publication number Publication date
JP2004030884A (ja) 2004-01-29
US6762952B2 (en) 2004-07-13
US20030206432A1 (en) 2003-11-06
FR2839380A1 (fr) 2003-11-07

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