FR2825513B1 - Procede de traitement par sulfuration de surface semi-conductrice compose iii et v - Google Patents

Procede de traitement par sulfuration de surface semi-conductrice compose iii et v

Info

Publication number
FR2825513B1
FR2825513B1 FR0107166A FR0107166A FR2825513B1 FR 2825513 B1 FR2825513 B1 FR 2825513B1 FR 0107166 A FR0107166 A FR 0107166A FR 0107166 A FR0107166 A FR 0107166A FR 2825513 B1 FR2825513 B1 FR 2825513B1
Authority
FR
France
Prior art keywords
sulfurization
compound iii
semiconductor surface
semiconductor
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0107166A
Other languages
English (en)
Other versions
FR2825513A1 (fr
Inventor
Dominique Lorans
Bruno Cavana
Arnaud Etcheberry
Michel Herlem
Jacky Vigneron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Original Assignee
Sagem SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagem SA filed Critical Sagem SA
Priority to FR0107166A priority Critical patent/FR2825513B1/fr
Priority to GB0212300A priority patent/GB2380320B/en
Priority to IL14991702A priority patent/IL149917A/xx
Priority to US10/157,039 priority patent/US6723578B2/en
Publication of FR2825513A1 publication Critical patent/FR2825513A1/fr
Application granted granted Critical
Publication of FR2825513B1 publication Critical patent/FR2825513B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
FR0107166A 2001-05-31 2001-05-31 Procede de traitement par sulfuration de surface semi-conductrice compose iii et v Expired - Fee Related FR2825513B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0107166A FR2825513B1 (fr) 2001-05-31 2001-05-31 Procede de traitement par sulfuration de surface semi-conductrice compose iii et v
GB0212300A GB2380320B (en) 2001-05-31 2002-05-28 Method for the sulphidation treatment of 111-V compound semiconductor surfaces
IL14991702A IL149917A (en) 2001-05-31 2002-05-29 Method for the sulphidation treatment of iii-v compound semiconductor surfaces
US10/157,039 US6723578B2 (en) 2001-05-31 2002-05-30 Method for the sulphidation treatment of III-V compound semiconductor surfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0107166A FR2825513B1 (fr) 2001-05-31 2001-05-31 Procede de traitement par sulfuration de surface semi-conductrice compose iii et v

Publications (2)

Publication Number Publication Date
FR2825513A1 FR2825513A1 (fr) 2002-12-06
FR2825513B1 true FR2825513B1 (fr) 2003-08-29

Family

ID=8863836

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0107166A Expired - Fee Related FR2825513B1 (fr) 2001-05-31 2001-05-31 Procede de traitement par sulfuration de surface semi-conductrice compose iii et v

Country Status (4)

Country Link
US (1) US6723578B2 (fr)
FR (1) FR2825513B1 (fr)
GB (1) GB2380320B (fr)
IL (1) IL149917A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2976718B1 (fr) 2011-06-14 2013-07-05 Centre Nat Rech Scient Procede de passivation chimique d'une surface d'un produit de materiau semi-conducteur iii-v, et produit obtenu par un tel procede
US20150118834A1 (en) * 2013-10-25 2015-04-30 Sematech, Inc. Sulfur and selenium passivation of semiconductors
CN105070655A (zh) * 2015-07-15 2015-11-18 中国电子科技集团公司第四十六研究所 一种锑化镓单晶片的钝化方法
US9984949B1 (en) 2017-01-12 2018-05-29 International Business Machines Corporation Surface passivation having reduced interface defect density

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5036376A (en) * 1986-01-31 1991-07-30 Texas Instruments Incorporated Passivation oxide conversion
US4751201A (en) * 1987-03-04 1988-06-14 Bell Communications Research, Inc. Passivation of gallium arsenide devices with sodium sulfide
US5188988A (en) * 1988-07-27 1993-02-23 Texas Instruments Incorporated Passivation oxide conversion wherein an anodically grown oxide is converted to the sulfide
JP2628814B2 (ja) * 1991-11-20 1997-07-09 日本電信電話株式会社 半導体装置の製造方法
US6087704A (en) * 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
JP2000195850A (ja) * 1998-10-20 2000-07-14 Telecommunication Advancement Organization Of Japan エッチング液、エッチング方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20020182840A1 (en) 2002-12-05
GB0212300D0 (en) 2002-07-10
IL149917A (en) 2005-03-20
GB2380320B (en) 2005-06-22
FR2825513A1 (fr) 2002-12-06
GB2380320A (en) 2003-04-02
US6723578B2 (en) 2004-04-20

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Legal Events

Date Code Title Description
TQ Partial transmission of property
TP Transmission of property

Owner name: SOFRADIR, FR

Effective date: 20131129

ST Notification of lapse

Effective date: 20160129