FR2818013B1 - JUNCTION FIELD EFFECT TRANSISTOR FOR FORMING A CURRENT LIMITER - Google Patents

JUNCTION FIELD EFFECT TRANSISTOR FOR FORMING A CURRENT LIMITER

Info

Publication number
FR2818013B1
FR2818013B1 FR0016263A FR0016263A FR2818013B1 FR 2818013 B1 FR2818013 B1 FR 2818013B1 FR 0016263 A FR0016263 A FR 0016263A FR 0016263 A FR0016263 A FR 0016263A FR 2818013 B1 FR2818013 B1 FR 2818013B1
Authority
FR
France
Prior art keywords
forming
field effect
effect transistor
current limiter
junction field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0016263A
Other languages
French (fr)
Other versions
FR2818013A1 (en
Inventor
Laurent Comibert
Fabien Pierre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0016263A priority Critical patent/FR2818013B1/en
Publication of FR2818013A1 publication Critical patent/FR2818013A1/en
Application granted granted Critical
Publication of FR2818013B1 publication Critical patent/FR2818013B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
FR0016263A 2000-12-13 2000-12-13 JUNCTION FIELD EFFECT TRANSISTOR FOR FORMING A CURRENT LIMITER Expired - Fee Related FR2818013B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0016263A FR2818013B1 (en) 2000-12-13 2000-12-13 JUNCTION FIELD EFFECT TRANSISTOR FOR FORMING A CURRENT LIMITER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0016263A FR2818013B1 (en) 2000-12-13 2000-12-13 JUNCTION FIELD EFFECT TRANSISTOR FOR FORMING A CURRENT LIMITER

Publications (2)

Publication Number Publication Date
FR2818013A1 FR2818013A1 (en) 2002-06-14
FR2818013B1 true FR2818013B1 (en) 2003-10-17

Family

ID=8857617

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0016263A Expired - Fee Related FR2818013B1 (en) 2000-12-13 2000-12-13 JUNCTION FIELD EFFECT TRANSISTOR FOR FORMING A CURRENT LIMITER

Country Status (1)

Country Link
FR (1) FR2818013B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015226641A1 (en) * 2015-12-23 2017-06-29 Robert Bosch Gmbh Current limiting device
CN110690273B (en) * 2019-10-16 2021-03-02 南京大学 Transverse GaN-based enhanced junction field effect transistor device and preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
GB1401276A (en) * 1970-05-22 1975-07-16 Mullard Ltd Methods of manufacturing semiconductor devices
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
EP0167810A1 (en) * 1984-06-08 1986-01-15 Eaton Corporation Power JFET with plural lateral pinching
SE500815C2 (en) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielectrically isolated semiconductor device and method for its manufacture
JP2713205B2 (en) * 1995-02-21 1998-02-16 日本電気株式会社 Semiconductor device
US5973341A (en) * 1998-12-14 1999-10-26 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) JFET device

Also Published As

Publication number Publication date
FR2818013A1 (en) 2002-06-14

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070831