FR2803456B1 - Commutateur de haute tension du type a translation de niveau en technologie mos - Google Patents

Commutateur de haute tension du type a translation de niveau en technologie mos

Info

Publication number
FR2803456B1
FR2803456B1 FR9916818A FR9916818A FR2803456B1 FR 2803456 B1 FR2803456 B1 FR 2803456B1 FR 9916818 A FR9916818 A FR 9916818A FR 9916818 A FR9916818 A FR 9916818A FR 2803456 B1 FR2803456 B1 FR 2803456B1
Authority
FR
France
Prior art keywords
high voltage
voltage switch
level translation
mos technology
translation type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9916818A
Other languages
English (en)
Other versions
FR2803456A1 (fr
Inventor
Richard Fournel
Laura Varisco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9916818A priority Critical patent/FR2803456B1/fr
Publication of FR2803456A1 publication Critical patent/FR2803456A1/fr
Application granted granted Critical
Publication of FR2803456B1 publication Critical patent/FR2803456B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR9916818A 1999-12-31 1999-12-31 Commutateur de haute tension du type a translation de niveau en technologie mos Expired - Fee Related FR2803456B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9916818A FR2803456B1 (fr) 1999-12-31 1999-12-31 Commutateur de haute tension du type a translation de niveau en technologie mos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9916818A FR2803456B1 (fr) 1999-12-31 1999-12-31 Commutateur de haute tension du type a translation de niveau en technologie mos

Publications (2)

Publication Number Publication Date
FR2803456A1 FR2803456A1 (fr) 2001-07-06
FR2803456B1 true FR2803456B1 (fr) 2003-01-17

Family

ID=9554122

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9916818A Expired - Fee Related FR2803456B1 (fr) 1999-12-31 1999-12-31 Commutateur de haute tension du type a translation de niveau en technologie mos

Country Status (1)

Country Link
FR (1) FR2803456B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100437729C (zh) * 2004-03-12 2008-11-26 新巨企业股份有限公司 变压器准位驱动电路
JP5707357B2 (ja) * 2012-04-04 2015-04-30 株式会社日立ハイテクノロジーズ スイッチ回路、質量分析装置及びスイッチ回路の制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
US5548147A (en) * 1994-04-08 1996-08-20 Texas Instruments Incorporated Extended drain resurf lateral DMOS devices
DE69531032T2 (de) * 1994-09-21 2003-11-27 Nec Electronics Corp., Kawasaki Spannungspegel-Verschiebungsschaltung
US5892371A (en) * 1996-02-12 1999-04-06 Advanced Micro Devices, Inc. Gate oxide voltage limiting devices for digital circuits
US5982198A (en) * 1997-03-19 1999-11-09 Honeywell Inc. Free inverter circuit

Also Published As

Publication number Publication date
FR2803456A1 (fr) 2001-07-06

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070831