FR2801681B1 - Procede et dispositif de mesure de la temperature de composants hyperfrequence - Google Patents

Procede et dispositif de mesure de la temperature de composants hyperfrequence

Info

Publication number
FR2801681B1
FR2801681B1 FR9915094A FR9915094A FR2801681B1 FR 2801681 B1 FR2801681 B1 FR 2801681B1 FR 9915094 A FR9915094 A FR 9915094A FR 9915094 A FR9915094 A FR 9915094A FR 2801681 B1 FR2801681 B1 FR 2801681B1
Authority
FR
France
Prior art keywords
measuring
temperature
microwave components
microwave
components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9915094A
Other languages
English (en)
French (fr)
Other versions
FR2801681A1 (fr
Inventor
Clement Tolant
Joel Cordier
Philippe Eudeline
Patrick Servain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9915094A priority Critical patent/FR2801681B1/fr
Priority to JP2000356019A priority patent/JP2001228199A/ja
Priority to EP00403300A priority patent/EP1107011A1/fr
Priority to US09/718,485 priority patent/US6431749B1/en
Publication of FR2801681A1 publication Critical patent/FR2801681A1/fr
Application granted granted Critical
Publication of FR2801681B1 publication Critical patent/FR2801681B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
FR9915094A 1999-11-30 1999-11-30 Procede et dispositif de mesure de la temperature de composants hyperfrequence Expired - Fee Related FR2801681B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9915094A FR2801681B1 (fr) 1999-11-30 1999-11-30 Procede et dispositif de mesure de la temperature de composants hyperfrequence
JP2000356019A JP2001228199A (ja) 1999-11-30 2000-11-22 マイクロ波部品の温度を測定する方法及び装置
EP00403300A EP1107011A1 (fr) 1999-11-30 2000-11-24 Procédé et dispositif de mesure de la température de composants hyperfréquence
US09/718,485 US6431749B1 (en) 1999-11-30 2000-11-24 Method and device to measure the temperature of microwave components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9915094A FR2801681B1 (fr) 1999-11-30 1999-11-30 Procede et dispositif de mesure de la temperature de composants hyperfrequence

Publications (2)

Publication Number Publication Date
FR2801681A1 FR2801681A1 (fr) 2001-06-01
FR2801681B1 true FR2801681B1 (fr) 2002-02-08

Family

ID=9552733

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9915094A Expired - Fee Related FR2801681B1 (fr) 1999-11-30 1999-11-30 Procede et dispositif de mesure de la temperature de composants hyperfrequence

Country Status (4)

Country Link
US (1) US6431749B1 (ja)
EP (1) EP1107011A1 (ja)
JP (1) JP2001228199A (ja)
FR (1) FR2801681B1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6637930B2 (en) * 2001-10-02 2003-10-28 International Rectifier Corporation Method for calculating the temperature rise profile of a power MOSFET
US6753807B1 (en) * 2002-07-30 2004-06-22 The United States Of America As Represented By The Secretary Of Commerce Combination N-way power divider/combiner and noninvasive reflected power detection
CN102636291B (zh) * 2011-02-15 2013-12-25 三一电气有限责任公司 一种igbt结温检测装置及其方法
EP2615467B1 (en) * 2012-01-11 2014-06-18 ABB Research Ltd. System and method for monitoring in real time the operating state of an IGBT device
CN111220891B (zh) * 2020-03-04 2022-06-14 楚天龙股份有限公司 一种igbt结温测量方法和测量装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221772A (en) * 1975-08-12 1977-02-18 Toshiba Corp Measuring system for working temperature of semiconductor element
FR2629597B1 (fr) * 1988-04-01 1990-12-07 Thomson Csf Dispositif et procede de mesure thermique d'un transistor bipolaire en fonctionnement
FR2680587B1 (fr) 1991-08-23 1993-10-15 Thomson Csf Procede et dispositif de commande et regulation.
US5497095A (en) * 1993-11-08 1996-03-05 Honda Giken Kogyo Kabushiki Kaisha Apparatus for inspecting electric component for inverter circuit
JP3784884B2 (ja) * 1996-05-15 2006-06-14 エスペック株式会社 試料実測式環境試験装置

Also Published As

Publication number Publication date
US6431749B1 (en) 2002-08-13
JP2001228199A (ja) 2001-08-24
EP1107011A1 (fr) 2001-06-13
FR2801681A1 (fr) 2001-06-01

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Legal Events

Date Code Title Description
AU Other action affecting the ownership or exploitation of an industrial property right
CL Concession to grant licences
ST Notification of lapse

Effective date: 20090731