FR2785079B1 - Dispositif de stockage a semi-conducteur et procede pour sa commande - Google Patents
Dispositif de stockage a semi-conducteur et procede pour sa commandeInfo
- Publication number
- FR2785079B1 FR2785079B1 FR9913265A FR9913265A FR2785079B1 FR 2785079 B1 FR2785079 B1 FR 2785079B1 FR 9913265 A FR9913265 A FR 9913265A FR 9913265 A FR9913265 A FR 9913265A FR 2785079 B1 FR2785079 B1 FR 2785079B1
- Authority
- FR
- France
- Prior art keywords
- controlling
- same
- storage device
- semiconductor storage
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30455598 | 1998-10-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2785079A1 FR2785079A1 (fr) | 2000-04-28 |
| FR2785079B1 true FR2785079B1 (fr) | 2008-03-28 |
Family
ID=17934411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9913265A Expired - Fee Related FR2785079B1 (fr) | 1998-10-26 | 1999-10-25 | Dispositif de stockage a semi-conducteur et procede pour sa commande |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6272044B2 (fr) |
| FR (1) | FR2785079B1 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6577531B2 (en) * | 2000-04-27 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and semiconductor device |
| US7053647B2 (en) * | 2004-05-07 | 2006-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of detecting potential bridging effects between conducting lines in an integrated circuit |
| TWI466269B (zh) * | 2006-07-14 | 2014-12-21 | Semiconductor Energy Lab | 非揮發性記憶體 |
| KR100854972B1 (ko) * | 2007-02-13 | 2008-08-28 | 삼성전자주식회사 | 메모리 시스템 및 그것의 데이터 읽기 방법 |
| US7978515B2 (en) * | 2007-03-23 | 2011-07-12 | Sharp Kabushiki Kaisha | Semiconductor storage device and electronic equipment therefor |
| US8797806B2 (en) | 2011-08-15 | 2014-08-05 | Micron Technology, Inc. | Apparatus and methods including source gates |
| US10541029B2 (en) | 2012-08-01 | 2020-01-21 | Micron Technology, Inc. | Partial block memory operations |
| US9318199B2 (en) | 2012-10-26 | 2016-04-19 | Micron Technology, Inc. | Partial page memory operations |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4855955A (en) * | 1988-04-08 | 1989-08-08 | Seeq Technology, Inc. | Three transistor high endurance eeprom cell |
| US5345414A (en) * | 1992-01-27 | 1994-09-06 | Rohm Co., Ltd. | Semiconductor memory device having ferroelectric film |
| JP3406077B2 (ja) * | 1994-08-26 | 2003-05-12 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
| US6002610A (en) * | 1998-04-30 | 1999-12-14 | Lucent Technologies Inc. | Non-volatile memory element for programmable logic applications and operational methods therefor |
-
1999
- 1999-10-22 US US09/425,196 patent/US6272044B2/en not_active Expired - Lifetime
- 1999-10-25 FR FR9913265A patent/FR2785079B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6272044B2 (en) | 2001-08-07 |
| FR2785079A1 (fr) | 2000-04-28 |
| US20010001597A1 (en) | 2001-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20110630 |