FR2774804B1 - Procede pour former l'electrode inferieure d'un condensateur - Google Patents
Procede pour former l'electrode inferieure d'un condensateurInfo
- Publication number
- FR2774804B1 FR2774804B1 FR9806657A FR9806657A FR2774804B1 FR 2774804 B1 FR2774804 B1 FR 2774804B1 FR 9806657 A FR9806657 A FR 9806657A FR 9806657 A FR9806657 A FR 9806657A FR 2774804 B1 FR2774804 B1 FR 2774804B1
- Authority
- FR
- France
- Prior art keywords
- capacitor
- forming
- lower electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087101622A TW374242B (en) | 1998-02-07 | 1998-02-07 | Method for manufacturing an underside electrode of a capacitor |
| GB9809770A GB2337159B (en) | 1998-02-07 | 1998-05-07 | Method for manufacturing capacitor's lower electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2774804A1 FR2774804A1 (fr) | 1999-08-13 |
| FR2774804B1 true FR2774804B1 (fr) | 2000-08-11 |
Family
ID=26313614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9806657A Expired - Fee Related FR2774804B1 (fr) | 1998-02-07 | 1998-05-27 | Procede pour former l'electrode inferieure d'un condensateur |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2936326B1 (fr) |
| DE (1) | DE19823253C1 (fr) |
| FR (1) | FR2774804B1 (fr) |
| GB (1) | GB2337159B (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3344482B2 (ja) | 1999-10-01 | 2002-11-11 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
| JP4731025B2 (ja) * | 2001-02-07 | 2011-07-20 | Ｏｋｉセミコンダクタ株式会社 | シリンダ型キャパシタ及びシリンダ型キャパシタの製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278091A (en) * | 1993-05-04 | 1994-01-11 | Micron Semiconductor, Inc. | Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node |
| KR0165499B1 (en) * | 1995-01-26 | 1998-12-15 | Samsung Electronics Co Ltd | Capacitor fabrication method of semiconductor device |
| KR970054170A (fr) * | 1995-12-25 | 1997-07-31 |
-
1998
- 1998-05-07 GB GB9809770A patent/GB2337159B/en not_active Expired - Fee Related
- 1998-05-26 DE DE19823253A patent/DE19823253C1/de not_active Expired - Fee Related
- 1998-05-27 JP JP10146282A patent/JP2936326B1/ja not_active Expired - Lifetime
- 1998-05-27 FR FR9806657A patent/FR2774804B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2936326B1 (ja) | 1999-08-23 |
| GB2337159B (en) | 2000-12-06 |
| FR2774804A1 (fr) | 1999-08-13 |
| DE19823253C1 (de) | 1999-07-15 |
| GB2337159A (en) | 1999-11-10 |
| JPH11238848A (ja) | 1999-08-31 |
| GB9809770D0 (en) | 1998-07-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| ST | Notification of lapse |