FR2767412B1 - Cellule memoire a lecture en courant - Google Patents
Cellule memoire a lecture en courantInfo
- Publication number
- FR2767412B1 FR2767412B1 FR9710513A FR9710513A FR2767412B1 FR 2767412 B1 FR2767412 B1 FR 2767412B1 FR 9710513 A FR9710513 A FR 9710513A FR 9710513 A FR9710513 A FR 9710513A FR 2767412 B1 FR2767412 B1 FR 2767412B1
- Authority
- FR
- France
- Prior art keywords
- current
- memory cell
- read memory
- read
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9710513A FR2767412B1 (fr) | 1997-08-14 | 1997-08-14 | Cellule memoire a lecture en courant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9710513A FR2767412B1 (fr) | 1997-08-14 | 1997-08-14 | Cellule memoire a lecture en courant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2767412A1 FR2767412A1 (fr) | 1999-02-19 |
FR2767412B1 true FR2767412B1 (fr) | 2000-06-16 |
Family
ID=9510400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9710513A Expired - Fee Related FR2767412B1 (fr) | 1997-08-14 | 1997-08-14 | Cellule memoire a lecture en courant |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2767412B1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5249952B2 (fr) * | 1972-10-23 | 1977-12-21 | ||
US4583201A (en) * | 1983-09-08 | 1986-04-15 | International Business Machines Corporation | Resistor personalized memory device using a resistive gate fet |
US5345420A (en) * | 1986-10-27 | 1994-09-06 | Seiko Epson Corporation | Semiconductor memory device |
JPH04311900A (ja) * | 1991-04-10 | 1992-11-04 | Sharp Corp | 半導体読み出し専用メモリ |
JP2823767B2 (ja) * | 1992-02-03 | 1998-11-11 | 松下電器産業株式会社 | レジスタファイル |
EP0685850B1 (fr) * | 1994-05-27 | 2000-07-26 | AT&T Corp. | Circuit intégré à semi-conducteurs comprenant un réseau de cellules SRAM avec circuit de détection de courant à entrée unique |
-
1997
- 1997-08-14 FR FR9710513A patent/FR2767412B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2767412A1 (fr) | 1999-02-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20060428 |